Simulation study of blue InGaN multiple quantum well light-emitting diodes with different hole injection layers

InGaN-based light-emitting diodes with p-GaN and p-A1GaN hole injection layers are numerically studied using the APSYS simulation software. The simulation results indicate that light-emitting diodes with p-A1GaN hole injection layers show superior optical and electrical performance, such as an increase in light output power, a reduction in current leakage and alleviation of efficiency droop. These improvements can be attributed to the p-A1GaN serving as hole injection layers, which can alleviate the band bending induced by the polarization field, thereby improving both the hole injection efficiency and the electron blocking efficiency.

Performance improvement of AlGaN-based deep ultraviolet light-emitting diodes with double electron blocking layers

The AlGaN-based deep ultraviolet light-emitting diodes（LED） with double electron blocking layers（d-EBLs） on both sides of the active region are investigated theoretically. They possess many excellent performances compared with the conventional structure with only a single electron blocking layer, such as a higher recombination rate, improved light output power and internal quantum efficiency（IQE）. The reasons can be concluded as follows. On the one hand, the weakened electrostatic field within the quantum wells（QWs） enhances the electron–hole spatial overlap in QWs, and therefore increases the probability of radioactive recombination. On the other hand, the added n-AlGaN layer can not only prevent holes from overflowing into the n-side region but also act as another electron source, providing more electrons.

Efficiency of a blue organic light-emitting diode enhanced by inserting charge control layers into the emission region

We demonstrate high current efficiency of a blue fluorescent organic light-emitting diode （OLED） by using the charge control layers （CCLs） based on Alq3 . The CCLs that are inserted into the emitting layers （EMLs） could impede the hole injection and facilitate the electron transport, which can improve the carrier balance and further expand the exciton generation region. The maximal current efficiency of the optimal device is 5.89 cd/A at 1.81 mA/cm2 , which is about 2.19 times higher than that of the control device （CD） without the CCL, and the maximal luminance is 19.660 cd/m2 at 12V. The device shows a good color stability though the green light emitting material Alq3 is introduced as the CCL in the EML, but it has a poor lifetime due to the formation of cationic Alq3 species.

Fine-tuning the thicknesses of organic layers to realize high-efficiency and long-lifetime blue organic light-emitting diodes

By using p-bis（p - N, N-diphenyl-aminostyryl）benzene doped 2-tert-butyl-9, 10-bis-β-naphthyl）-anthracene as an emitting layer, we fabricate a high-efficiency and long-lifetime blue organic light emitting diode with a maximum external quantum efficiency of 6.19% and a stable lifetime at a high initial current density of 0.0375 A/cm2. We demonstrate that the change in the thicknesses of organic layers affects the operating voltage and luminous efficiency greater than the lifetime. The lifetime being independent of thickness is beneficial in achieving high-quality full-colour display devices and white lighting sources with multi-emitters.

Enhanced performances of AlGaInP-based light-emitting diodes with Schottky current blocking layers

A new epitaxial structure of AlGaInP-based light-emitting diode（LED） with a 0.5-μm GaP window layer was fabricated. In addition, indium tin oxide（ITO） and localized Cr deposition beneath the p-pad electrode were used as the current spreading layer and the Schottky current blocking layer（CBL）, respectively. The results indicated that ITO and the Schottky CBL improve the total light extraction efficiency by relieving the current density crowding beneath the p-pad electrode. At the current of 20 mA, the light output power of the novel LED was 40% and 19% higher than those of the traditional LED and the new epitaxial LED without CBL. It was also found that the novel LED with ITO and CBL shows better thermal characteristics.

Tetraalkyl-substituted zinc phthalocyanines used as anode buffer layers for organic light-emitting diodes

Two soluble tetraalkyl-substituted zinc phthalocyanines(ZnPcs)for use as anode buffer layer materials in tris(8-hydroxyquinoline)aluminum(Alq3)-based organic light-emitting diodes(OLEDs)are presented in this work.The holeblocking properties of these Zn Pc layers slowed the hole injection process into the Alq3 emissive layer greatly and thus reduced the production of unstable cationic Alq3(Alq3^+)species.This led to the enhanced brightness and efficiency when compared with the corresponding properties of OLEDs based on the popular poly-(3,4-ethylenedioxythiophene):poly(styrene sulfonate)(PEDOT:PSS)buffer layer.Furthermore,because of the high thermal and chemical stabilities of these Zn Pcs,a nonaqueous film fabrication process was realized together with improved charge balance in the OLEDs and enhanced OLED lifetimes.

Improved performance of organic light-emitting diodes with dual electron transporting layers

In this study the performance of organic light-emitting diodes （OLEDs） are enhanced significantly, which is based on dual electron transporting layers （13phen/CuPc）. By adjusting the thicknesses of Bphen and CuPc, the maximal luminescence, the maximal current efficiency, and the maximal power efficiency of the device reach 17570 cd/m^2 at 11 V, and 5.39 cd/A and 3.39 lm/W at 3.37 mA/cm^2 respectively, which are enhanced approximately by 33.4%, 39.3%, and 68.9%, respectively, compared with those of the device using Bphen only for an electron transporting layer. These results may provide some valuable references for improving the electron injection and the transportation of OLED.

Very-High Color Rendering Index Hybrid White Organic Light-Emitting Diodes with Double Emitting Nanolayers

A very-high color rendering index white organic light-emitting diode(WOLED) based on a simple structure was successfully fabricated. The optimized device exhibits a maximum total efficiency of 13.1 and 5.4 lm/W at 1,000 cd/m2. A peak color rendering index of 90 and a relatively stable color during a wide range of luminance were obtained. In addition, it was demonstrated that the 4,40,400-tri(9-carbazoyl) triphenylamine host influenced strongly the performance of this WOLED.These results may be beneficial to the design of both material and device architecture for high-performance WOLED.

Performance improvement of InGaN blue light-emitting diodes with several kinds of electron-blocking layers

The performance of InGaN blue light-emitting diodes（LEDs） with different kinds of electron-blocking layers is investigated numerically.We compare the simulated emission spectra,electron and hole concentrations,energy band diagrams,electrostatic fields,and internal quantum efficiencies of the LEDs.The LED using AlGaN with gradually increasing Al content from 0% to 20% as the electron-blocking layer（EBL） has a strong spectrum intensity,mitigates efficiency droop,and possesses higher output power compared with the LEDs with the other three types of EBLs.These advantages could be because of the lower electron leakage current and more effective hole injection.The optical performance of the specifically designed LED is also improved in the case of large injection current.

Light-Emitting Diodes Based on All-Quantum-Dot Multilayer Films and the Influence of Various Hole-Transporting Layers on the Performance

We present a systematic analysis of the exciton-recombination zone within all-quantum-dot （QD） multilayer films using sensing QD layers in QD-based light-emitting diodes （QLEDs）, and demonstrate the a11-QD multilayer films with different sequences of layers prepared by inserting a sensing blue QD layer denoted as B at various positions within four red QD multilayers denoted as R. We also use different hole transporting layers （PVK, CBP as well as poly-TPD） to prevent the formation of leakage current and to improve the luminance. The results show that the total EL emission is mostly at the fourth （60%） and fifth （40%） QD monolayers, adjacent to ITO. This presents both decreasing current density and increasing brightness with different hole transporting layers, thus resulting in more efficient performance.

Color-Tunable Hybrid White Organic Light-Emitting Diodes with Double Interlayers

An efficient color-tunable hybrid white organic light-emitting diode is demonstrated with double interlayers of 2,7-bis(carbazol-9-yl)-9,9-ditoylfluo- rene/2-(diphenylphosphoryl) spiroflu-orene (DMFL-CBP/SPPO1) inserted between blue fluorescent and yellow phosphorescent-emitting layers, and exhibits Commission Internationale de l’Eclairage (CIE1931) ranging from warm white (0.4368, 0.4497) to cool white (0.2781, 0.2896) with driving current density from 0.2 to 40 mA/cm2. The recombination of singlet and the triplet excitons in blue fluores-cent-emitting layer and yellow phosphorescent-emitting layer, respectively, can be modulated by both the thickness of these double interlayers and the applied current densities.

Numerical Study of Optimization of Layer Thickness in Bilayer Organic Light-Emitting Diodes

A numerical model for bilayer organic light-emitting diodes (OLEDs) is developed under the basis of trapped charge limited conduction.The dependences of the current density on the layer thickness,trap properties and carrier mobility of the hole transport layer (HTL) and emission layer (EML) in bilayer OLEDs of the structure anode/HTL/EML/cathode are numerically investigated.It is found that,for given values of the total thickness of organic layers,reduced depth of trap,total density of trap,and carrier mobility of HTL as well as EML,there exists an optimal thickness ratio of HTL to EML,by which a maximal quantum efficiency can be achieved.Through optimization of the thickness ratio,an enhancement of current density and quantum efficiency of as much as two orders of magnitude can be obtained.The dependences of the optimal thickness ratio to the characteristic trap energy,total density of trap and carrier mobility are numerically analyzed.

Growth,leaf anatomy,and photosynthesis of cotton(Gossypium hirsutum L.)seedlings in response to four light-emitting diodes and high pressure sodium lamp

Background Light is a critical factor in plant growth and development,particularly in controlled environments.Light-emitting diodes(LEDs)have become a reliable alternative to conventional high pressure sodium(HSP)lamps because they are more efficient and versatile in light sources.In contrast to well-known specialized LED light spectra for vegetables,the appropriate LED lights for crops such as cotton remain unknown.Results In this growth chamber study,we selected and compared four LED lights with varying percentages(26.44%–68.68%)of red light(R,600–700 nm),combined with other lights,for their effects on growth,leaf anatomy,and photosynthesis of cotton seedlings,using HSP lamp as a control.The total photosynthetic photon flux density(PPFD)was(215±2)μmol·m-2·s-1 for all LEDs and HSP lamp.The results showed significant differences in all tested parameters among lights,and the percentage of far red(FR,701–780 nm)within the range of 3.03%–11.86%was positively correlated with plant growth(characterized by leaf number and area,plant height,stem diameter,and total biomass),palisade layer thickness,photosynthesis rate(Pn),and stomatal conductance(Gs).The ratio of R/FR(4.445–11.497)negatively influenced the growth of cotton seedlings,and blue light(B)suppressed stem elongation but increased palisade cell length,chlorophyll content,and Pn.Conclusion The LED 2 was superior to other LED lights and HSP lamp.It had the highest ratio of FR within the total PPFD(11.86%)and the lowest ratio of R/FR(4.445).LED 2 may therefore be used to replace HPS lamp under controlled environments for the study of cotton at the seedling stage.

The advantage of blue InGaN multiple quantum wells light-emitting diodes with p-AlInN electron blocking layer

InGaN based light-emitting diodes （LEDs） with different electron blocking layers have been numerically investi- gated using the APSYS simulation software. It is found that the structure with a p-AlInN electron blocking layer showes improved light output power, lower current leakage, and smaller efficiency droop. Based on numerical simulation and analysis, these improvements of the electrical and optical characteristics are mainly attributed to the efficient electron blocking in the InGaN/GaN multiple quantum wells （MQWs）.

Efficiency enhancement of ultraviolet light-emitting diodes with segmentally graded p-type AlGaN layer

AlGaN-based ultraviolet light-emitting diodes(UV-LEDs) have attracted considerable interest due to their wide range of application fields. However, they are still suffering from low light out power and unsatisfactory quantum efficiency.The utilization of polarization-doped technique by grading the Al content in p-type layer has demonstrated its effectiveness in improving LED performances by providing sufficiently high hole concentration. However, too large degree of grading through monotonously increasing the Al content causes strains in active regions, which constrains application of this technique, especially for short wavelength UV-LEDs. To further improve 340-nm UV-LED performances, segmentally graded Al content p-Al_xGa_(1-x)N has been proposed and investigated in this work. Numerical results show that the internal quantum efficiency and output power of proposed structures are improved due to the enhanced carrier concentrations and radiative recombination rate in multiple quantum wells, compared to those of the conventional UV-LED with a stationary Al content AlGaN electron blocking layer. Moreover, by adopting the segmentally graded p-Al_xGa_(1-x)N, band bending within the last quantum barrier/p-type layer interface is effectively eliminated.

Enhanced light extraction of GaN-based light-emitting diodes with periodic textured SiO_2 on Al-doped ZnO transparent conductive layer

We report an effective enhancement in light extraction of Ga N-based light-emitting diodes（LEDs） with an Al-doped Zn O（AZO） transparent conductive layer by incorporating a top regular textured SiO2 layer. The 2 inch transparent throughpore anodic aluminum oxide（AAO） membrane was fabricated and used as the etching mask. The periodic pore with a pitch of about 410 nm was successfully transferred to the surface of the SiO2 layer without any etching damages to the AZO layer and the electrodes. The light output power was enhanced by 19% at 20 m A and 56% at 100 m A compared to that of the planar LEDs without a patterned surface. This approach offers a technique to fabricate a low-cost and large-area regular pattern on the LED chip for achieving enhanced light extraction without an obvious increase of the forward voltage.

基于YOLOv5_4layers的PCB小目标缺陷识别方法

针对PCB表面缺陷分辨率低、小目标性以及多样性等问题,提出了一种基于YOLOv5_4layers的PCB小目标缺陷识别方法。该方法在YOLOv5架构的基础上,通过新增采样层的方式添加小目标检测层,优化特征金字塔模型,提升小目标特征提取性能,实现小目标缺陷识别。在调整合适的锚框规格后,改进后的模型在输入640像素×640像素图像时,相较原模型识别精确率提升了7.5%。在输入736像素×736像素图像时,识别精确率提升了1.3%,有效地提升了对PCB小目标缺陷的识别能力,对提高PCB制造过程的质量控制和产品可靠性具有实际意义。

Improvement of characteristics of an InGaN light-emitting diode by using a staggered AlGaN electron-blocking layer

The optical and physical properties of an InGaN light-emitting diode （LED） with a specific design of a staggered AlGaN electron-blocking layer （EBL） are investigated numerically in detail. The electrostatic field distribution, energy band, carrier concentration, electroluminescence （EL） intensity, internal quantum efficiency （IQE）, and the output power are simulated. The results reveal that this specific design has a remarkable improvement in optical performance compared with the design of a conventional LED. The lower electron leakage current, higher hole injection efficiency, and consequently mitigated efficiency droop are achieved. The significant decrease of electrostatic field at the interface between the last barrier and the EBL of the LED could be one of the main reasons for these improvements.

Improved performance of InGaN light-emitting diodes with a novel sawtooth-shaped electron blocking layer

A sawtooth-shaped electron blocking layer is proposed to improve the performance of light-emitting diodes （LEDs）. The energy band diagram, the electrostatic field in the quantum well, the carrier concentration, the electron leakage, and the internal quantum efficiency are systematically studied. The simulation results show that the LED with a sawtooth-shaped electron blocking layer possesses higher output power and a smaller efficiency droop than the LED with a conventional A1GaN electron blocking layer, which is because the electron confinement is enhanced and the hole injection efficiency is improved by the appropriately modified electron blocking layer energy band.

Tandem organic light-emitting diode with a molybdenum tri-oxide thin film interconnector layer

A 10-nm-thick molybdenum tri-oxide（MoO3） thin film was used as the interconnector layer in tandem organic lightemitting devices（OLEDs）.The tandem OLEDs with two identical emissive units consisting of N,N-bis（naphthalen-1-yl）N,N-bis（phenyl）-benzidine（NPB） /tris（8-hydroxyquinoline） aluminum（Alq3） exhibited current efficiency-current density characteristics superior to the conventional single-unit devices.At 20 mA/cm2,the current efficiency of the tandem OLEDs using the interconnector layers of MoO3 thin film was about 4.0 cd/A,which is about twice that of the corresponding conventional single-unit device（1.8cd/A）.The tandem OLED showed a higher power efficiency than the conventional single-unit device for luminance over 1200cd/m2.The experimental results demonstrated that a MoO3 thin film with a proper thickness can be used as an effective interconnector layer in tandem OLEDs.Such an interconnector layer can be easily fabricated by simple thermal evaporation,greatly simplifying the device processing and fabrication processes required by previously reported interconnector layers.A possible explanation was proposed for the carrier generation of the MoO3 interconnector layer.