Light-Induced Changes in a-Si∶H Films Studied by Transient Photoconductivity

Light induced changes in a-Si∶H films are investigated by transient photoconductivity.The transient photoconductivity decay data can neither be fit well by common power-law for transient photocurrent in amorphous semiconductors,nor by stretched exponential rule for transient decay from the steady state in photoconductivity.Instead,the data are fit fairly well with a sum of two exponential functions.The results show that the long time decay is governed by deep traps rather than band tail states,and two different traps locating separately at 0.52 and 0.59eV below E _c are responsible for the two exponential functions.They are designated as negatively charged dangling bond D - centers.The light-induced changes in photoconductivity are attributed mainly to the decrease in electron lifetime caused by the increase of recombination centers after light soaking.

THE LIGHT INDUCED CHANGE IN TRANSIENT PHOTOCONDUC-TIVITY OF POLYMORPHOUS SILICON FILMS

The decays of transient photoconductivity and their light-induced changes of polymorphous silicon (pm-Si:H) films were investigated. The decays can be fit fairly well by a sum of two exponential decay functions, which indicates that there are two kinds of traps contributing to the process. The light-induced changes of the concentration and energy level of the traps were estimated. The results show that the light-induced changes in trap energy position Et, trap concentration Nt as well as photoconductivity are markedly less for pm-Si:H than that for a-Si:H.

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