We demonstrated the controlled growth of two-dimensional （2D） hexagonal tin disulfide （SnS2） nanoflakes with stacked monolayer atomic steps. The morphology was similar to flat-topped and step-sided mesa plateaus o...We demonstrated the controlled growth of two-dimensional （2D） hexagonal tin disulfide （SnS2） nanoflakes with stacked monolayer atomic steps. The morphology was similar to flat-topped and step-sided mesa plateaus or step pyramids. The SnS2 nanoflakes were grown on mica substrates via an atmospheric-pressure chemical vapor deposition process using tin monosulfide and sulfur powder as precursors. Atomic force microscopy （AFM）, electron microscopy, and Raman characterizations were performed to investigate the structural features, and a sequential layer-wise epitaxial growth mechanism was revealed. In addition, systematic Raman characterizations were performed on individual SnS2 nanoflakes with a wide range of thicknesses （1-100 nm）, indicating that the A1g peak intensity and Raman shifts were closely related to the thickness of the SnS2 nanoflakes. Moreover, photoconductive AFM was performed on the monolayer-stepped SnS2 nanoflakes, revealing that the flat surface and the edges of the SnS2 atomic steps had different electrical conductive properties and photoconductive behaviors. This is ascribed to the dangling bonds and defects at the atomic step edges, which caused a height difference of the Schottky barriers formed at the interfaces between the PtIr-coated AFM tip and the step edges or the flat surface of the SnS2 nanoflakes. The 2D SnS2 crystals with regular monolayer atomic steps and fast photoresponsivity are promising for novel applications in photodetectors and integrated optoelectronic circuits.展开更多
基金Acknowledgements We thank Prof. Qian Yu at Zhejiang University for the help in the aspect of high-resolution TEM charac- terizations. This work is supported by National Basic Research Program of China （No. 2015CB659300）, National Materials Genome Project （No. 2016YFB0700600）, National Natural Science Foundation of China （Nos. 21403105 and 21573108）, China Postdoctoral Science Foundation （Nos. 2015M580408, 2015M581775, 2015M580413 and 2015M581769）, Natural Science Foundation of Jiangsu Province （Nos. BK20150571 and BK20160647）, Fundamental Research Funds for the Central Universities and a project funded by the Priority Academic Program Development （PAPD） of Jiangsu Higher Education Institutions.
文摘We demonstrated the controlled growth of two-dimensional （2D） hexagonal tin disulfide （SnS2） nanoflakes with stacked monolayer atomic steps. The morphology was similar to flat-topped and step-sided mesa plateaus or step pyramids. The SnS2 nanoflakes were grown on mica substrates via an atmospheric-pressure chemical vapor deposition process using tin monosulfide and sulfur powder as precursors. Atomic force microscopy （AFM）, electron microscopy, and Raman characterizations were performed to investigate the structural features, and a sequential layer-wise epitaxial growth mechanism was revealed. In addition, systematic Raman characterizations were performed on individual SnS2 nanoflakes with a wide range of thicknesses （1-100 nm）, indicating that the A1g peak intensity and Raman shifts were closely related to the thickness of the SnS2 nanoflakes. Moreover, photoconductive AFM was performed on the monolayer-stepped SnS2 nanoflakes, revealing that the flat surface and the edges of the SnS2 atomic steps had different electrical conductive properties and photoconductive behaviors. This is ascribed to the dangling bonds and defects at the atomic step edges, which caused a height difference of the Schottky barriers formed at the interfaces between the PtIr-coated AFM tip and the step edges or the flat surface of the SnS2 nanoflakes. The 2D SnS2 crystals with regular monolayer atomic steps and fast photoresponsivity are promising for novel applications in photodetectors and integrated optoelectronic circuits.
