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A Novel Polysilicon and Oxide Sandwich Deep Trench with Field Limiting Ring for RF Power Transistors
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作者 齐臣杰 傅军 +1 位作者 王军军 刘理天 《Journal of Semiconductors》 EI CAS CSCD 北大核心 2004年第11期1398-1402,共5页
A vertical sandwich deep trench with a field limiting ring is proposed to improve the breakdown voltage of power devices and high voltage devices.Simulation result shows that nearly 100% breakdown voltage of the plane... A vertical sandwich deep trench with a field limiting ring is proposed to improve the breakdown voltage of power devices and high voltage devices.Simulation result shows that nearly 100% breakdown voltage of the plane junction can be realized. 展开更多
关键词 deep trench field limiting ring breakdown voltage
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A New Quasi 2-Dimensional Analytical Approach to Predicting Ring Junction Voltage,Edge Peak Fields and Optimal Spacing of Planar Junction with Single Floating Field Limiting Ring Structure
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作者 何进 张兴 +1 位作者 黄如 王阳元 《Journal of Semiconductors》 EI CAS CSCD 北大核心 2001年第6期700-705,共6页
WT8.BZ]A new quasi 2-dimensional analytical approach to predicting the ring voltage,edge peak fields and optimal spacing of the planar junction with a single floating field limiting ring structure has been proposed,ba... WT8.BZ]A new quasi 2-dimensional analytical approach to predicting the ring voltage,edge peak fields and optimal spacing of the planar junction with a single floating field limiting ring structure has been proposed,based on the cylindrical symmetric solution and the critical field concept.The effects of the spacing and reverse voltage on the ring junction voltage and edge peak field profiles have been analyzed.The optimal spacing and the maximum breakdown voltage of the structure have also been obtained.The analytical results are in excellent agreement with that obtained from the 2-D device simulator,MEDICI and the reported result,which proves the presented model valid. 展开更多
关键词 floating field limiting ring breakdown voltage edge peak electric filed ring spacing
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A novel thin drift region device with field limiting rings in substrate 被引量:2
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作者 李琦 朱金鸾 +1 位作者 王卫东 韦雪明 《Chinese Physics B》 SCIE EI CAS CSCD 2011年第11期433-437,共5页
A novel thin drift region device with heavily doped N+ rings embedded in the substrate is reported, which is called the field limiting rings in substrate lateral double-diffused MOS transistor (SFLR LDMOS). In the ... A novel thin drift region device with heavily doped N+ rings embedded in the substrate is reported, which is called the field limiting rings in substrate lateral double-diffused MOS transistor (SFLR LDMOS). In the SFLR LDMOS, the peak of the electric field at the main junction is reduced due to the transfer of the voltage from the main junction to other field limiting ring junctions, so the vertical electric field is improved significantly. A model of the breakdown voltage is developed, from which optimal spacing is obtained. The numerical results indicate that the breakdown voltage of the device proposed is increased by 76% in comparison to that of the conventional LDMOS. 展开更多
关键词 field limiting ring reduced surface field reduced bulk field breakdown voltage
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Experimental and numerical analyses of high voltage 4H-SiC junction barrier Schottky rectifiers with linearly graded field limiting ring 被引量:2
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作者 王向东 邓小川 +3 位作者 王永维 王勇 文译 张波 《Chinese Physics B》 SCIE EI CAS CSCD 2014年第5期490-494,共5页
This paper describes the successful fabrication of 4H-SiC junction barrier Schottky (JBS) rectifiers with a linearly graded field limiting ring (LG-FLR). Linearly variable ring spacings for the FLR termination are... This paper describes the successful fabrication of 4H-SiC junction barrier Schottky (JBS) rectifiers with a linearly graded field limiting ring (LG-FLR). Linearly variable ring spacings for the FLR termination are applied to improve the blocking voltage by reducing the peak surface electric field at the edge termination region, which acts like a variable lateral doping profile resulting in a gradual field distribution. The experimental results demonstrate a breakdown voltage of 5 kV at the reverse leakage current density of 2 mA/cm2 (about 80% of the theoretical value). Detailed numerical simulations show that the proposed termination structure provides a uniform electric field profile compared to the conventional FLR termi- nation, which is responsible for 45% improvement in the reverse blocking voltage despite a 3.7% longer total termination length. 展开更多
关键词 4H-SIC junction barrier Schottky rectifier linearly graded field limiting ring breakdown voltage
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Breakdown Electric Field of Hot 30% CF_3I/CO_2 Mixtures at Temperature of 300–3500 K During Arc Extinction Process 被引量:1
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作者 ZHAO Xiaoling JIAO Juntao XIAO Dengming 《Plasma Science and Technology》 SCIE EI CAS CSCD 2016年第11期1095-1100,共6页
We calculated the uniform dielectric breakdown field strength of residual 30% CF3I/CO2 gas mixtures during the arc extinction process over the temperature range 300-3500 K at 0.1 MPa. The limiting reduced field streng... We calculated the uniform dielectric breakdown field strength of residual 30% CF3I/CO2 gas mixtures during the arc extinction process over the temperature range 300-3500 K at 0.1 MPa. The limiting reduced field strengths are decided by a balance of electron generation and loss based on chemical reactions estimated by the electron energy distribution function (EEDF), which employs the Boltzmann equation method with two-term expanding approximation in the steady-state Townsend (SST) condition. During the insulation recovery phase, the hot CF3I/CO2 gas mixtures have maximum dielectric strength at a temperature of about 1500 K. At room temperature 300 K, the electric strength after arc extinction (90.3 Td, 1 Td=10-21 V.m2) is only 38% of the original value before arc (234.9 Td). The adverse insulation recovery ability of CF3I/CO2 gas mixtures in arc extinction hinders its application in electric circuit breakers and other switchgears as an arc quenching and insulating medium. 展开更多
关键词 limiting electric field strength electron swarm parameters Boltzmannequation hot CF3I/CO2 gas mixtures
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AN ASYMPTOTIC PRESERVING SCHEME FOR THE VLASOV-POISSON-FOKKER-PLANCK SYSTEM IN THE HIGH FIELD REGIME
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作者 Shi Jin Li Wang 《Acta Mathematica Scientia》 SCIE CSCD 2011年第6期2219-2232,共14页
The Vlasov-Poisson-Fokker-Planck system under the high field scaling describes the Brownian motion of a large system of particles in a surrounding bath where both collision and field effects (electrical or gravitatio... The Vlasov-Poisson-Fokker-Planck system under the high field scaling describes the Brownian motion of a large system of particles in a surrounding bath where both collision and field effects (electrical or gravitational) are dominant. Numerically solving this system becomes challenging due to the stiff collision term and stiff nonlinear transport term with respect to the high field. We present a class of Asymptotic-Preserving scheme which is efficient in the high field regime, namely, large time steps and coarse meshes can be used, yet the high field limit is still captured. The idea is to combine the two stiff terms and treat them implicitly. Thanks to the linearity of the collision term, using the discretization described in [Jin S, Yah B. J. Comp. Phys., 2011, 230: 6420-6437] we only need to invert a symmetric matrix. This method can be easily extended to higher dimensions. The method is shown to be positive, stable, mass and asymptotic preserving. Numerical experiments validate its efficiency in both kinetic and high field regimes including mixing regimes. 展开更多
关键词 Vlasov-Poisson-Fokker-Planck equation high field limit asymptoticpreserving schemes
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Research on the field emission mechanism of nano-structured carbon film
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作者 王艳燕 李英爱 +1 位作者 许基松 顾广瑞 《Chinese Physics B》 SCIE EI CAS CSCD 2012年第8期522-526,共5页
The field emission (FE) characteristics of nano-structured carbon films (NSCFs) are investigated. The saturation behaviour of the field emission current density found at high electric field E cannot be reasonably ... The field emission (FE) characteristics of nano-structured carbon films (NSCFs) are investigated. The saturation behaviour of the field emission current density found at high electric field E cannot be reasonably explained by the traditional Fowler-Nordheim (F-N) theory. A three-region E model and the curve-fitting method are utilized for discussing the FE characteristics of NSCFs. In the low, high, and middle E regions, the FE mechanism is reasonably explained by a modified F-N model, a corrected space-charge-limited-current (SCLC) model and the joint model of F N and SCLC mechanism, respectively. Moreover, the measured FE data accord well with the results from our corrected theoretical model. 展开更多
关键词 nano-structured carbon films field emission F-N theory space charge limited current three-region electric field model
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Tensor and Effective Vector Approach to Gravitational Radiation in the Weak Field Limit
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作者 P. Christillin 《Journal of Modern Physics》 2021年第6期798-805,共8页
The purpose of the present paper is to enquire whether General Relativity (GR) is necessary for the prediction of gravitational waves. It will be shown that in the weak field limit the same predictions come also from ... The purpose of the present paper is to enquire whether General Relativity (GR) is necessary for the prediction of gravitational waves. It will be shown that in the weak field limit the same predictions come also from the treatment of a zero mass, spin 2 gravitational scattering amplitude. This will also justify the simpler effective vector approach of the author, only the angular distribution differing from that of a tensor theory. 展开更多
关键词 Gravitational Waves Weak field Limit Non GR Approaches
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Magnetic Field Measurement with Heisenberg Limit Based on Solid Spin NOON State
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作者 周雷鸣 董杨 孙方稳 《Chinese Physics Letters》 SCIE CAS CSCD 2015年第6期164-168,共5页
The maximum entangled number state (NOON state) can improve the sensitivity of physical quantity measure- ment to the Heisenberg limit 1/N. In this work, the magnetic field measurement based on the individual solid ... The maximum entangled number state (NOON state) can improve the sensitivity of physical quantity measure- ment to the Heisenberg limit 1/N. In this work, the magnetic field measurement based on the individual solid spin NOON state is investigated. Based on the tunable effective coupling coefficient, we propose a generation scheme of the three-spin NOON state, i.e, the Creenberger-Horne-Zeilinger (CHZ) state, and discussed the mea- surement resolution reduction due to decoherence. It is unnecessary to entangle spins as many as possible when decoherence exists. In practice, defect spins in diamond and alp donors with long coherence time can be applied with current techniques in the nano-scaled high resolution magnetic measurement. 展开更多
关键词 Magnetic field Measurement with Heisenberg Limit Based on Solid Spin NOON State
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Static Induction Devices with Planar Type Buried Gate 被引量:1
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作者 王永顺 李思渊 胡冬青 《Journal of Semiconductors》 EI CAS CSCD 北大核心 2004年第2期126-132,共7页
Based on the surface-gate and buried-gate structures,a novel buried-gate structure called the planar type buried-gate (PTBG) structure for static induction devices (SIDs) is proposed.An approach to realize a buried-ga... Based on the surface-gate and buried-gate structures,a novel buried-gate structure called the planar type buried-gate (PTBG) structure for static induction devices (SIDs) is proposed.An approach to realize a buried-gate type static induction transistor by conventional planar process technology is presented.Using this structure,it is successfully avoided the second epitaxy with a high degree of difficulty and the complicated mesa process in conventional buried gate.The experimental results demonstrate that this structure is desirable for application in power SIDs.Its advantages are high breakdown voltage and blocking gain. 展开更多
关键词 static induction device planar type buried gate structure blocking voltage limiting field ring
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Predicting the Dielectric Strength of c-C_4F_8 and SF_6 Gas Mixtures by Monte Carlo Method 被引量:3
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作者 吴变桃 肖登明 《Journal of Shanghai Jiaotong university(Science)》 EI 2007年第1期121-124,共4页
An improved Monte Carlo method was used to simulate the motion of electrons in c-C4F8 and SF6 gas mixtures for pulsed townsend discharge. The electron swarm parameters such as effective ionization coefficient, -↑α a... An improved Monte Carlo method was used to simulate the motion of electrons in c-C4F8 and SF6 gas mixtures for pulsed townsend discharge. The electron swarm parameters such as effective ionization coefficient, -↑α and drift velocity over the E/N range from 280~700 Td(1Td=10^-21 V·m^2) were calculated by employing a set of cross sections available in literature. From the variation cure of -↑α with SF6 partial pressure p, the limiting field (E/N)lim of gas mixture at different gas content was determined. It is found that the limiting field of c-C4F8 and SF6 gas mixture is higher than that of pure SF6 at any SF6 mixture ratio. Simulation results show excellent agreement with experiment data available in previous literature. 展开更多
关键词 c-C4F8 and SF6 gas mixture Monte Carlo limiting field dielectric strength
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A new algorithm based on C-V characteristics to extract the epitaxy layer parameters for power devices with the consideration of termination
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作者 Jiupeng Wu Na Ren Kuang Sheng 《Chinese Physics B》 SCIE EI CAS CSCD 2021年第4期616-628,共13页
Doping concentration and thickness of an epitaxy layer are the most essential parameters for power devices.The conventional algorithm extracts these two parameters by calculating the doping profile from its capacitanc... Doping concentration and thickness of an epitaxy layer are the most essential parameters for power devices.The conventional algorithm extracts these two parameters by calculating the doping profile from its capacitance-voltage(C-V)characteristics.Such an algorithm treats the device as a parallel-plane junction and ignores the influence of the terminations.The epitaxy layer doping concentration tends to be overestimated and the thickness underestimated.In order to obtain the epitaxy layer parameters with higher accuracy,a new algorithm applicable for devices with field limited ring(FLR)terminations is proposed in this paper.This new algorithm is also based on the C-V characteristics and considers the extension manner of the depletion region under the FLR termination.Such an extension manner depends on the design parameters of the FLR termination and is studied in detail by simulation and modeling.The analytical expressions of the device C-V characteristics and the effective doping profile are derived.More accurate epitaxy layer parameters can be extracted by fitting the effective doping profile expression to the C-V doping profile calculated from the C-V characteristics.The relationship between the horizontal extension width and the vertical depth of the depletion region is also acquired.The credibility of the new algorithm is verified by experiments.The applicability of our new algorithm to FLR/field plate combining terminations is also discussed.Our new algorithm acts as a powerful tool for analyses and improvements of power devices. 展开更多
关键词 C-V characteristics doping concentration epitaxy layer thickness field limited ring termination
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On the mean field limit of the Random Batch Method for interacting particle systems 被引量:2
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作者 Shi Jin Lei Li 《Science China Mathematics》 SCIE CSCD 2022年第1期169-202,共34页
The Random Batch Method proposed in our previous work(Jin et al.J Comput Phys,2020)is not only a numerical method for interacting particle systems and its mean-field limit,but also can be viewed as a model of the part... The Random Batch Method proposed in our previous work(Jin et al.J Comput Phys,2020)is not only a numerical method for interacting particle systems and its mean-field limit,but also can be viewed as a model of the particle system in which particles interact,at discrete time,with randomly selected mini-batch of particles.In this paper,we investigate the mean-field limit of this model as the number of particles N→∞.Unlike the classical mean field limit for interacting particle systems where the law of large numbers plays the role and the chaos is propagated to later times,the mean field limit now does not rely on the law of large numbers and the chaos is imposed at every discrete time.Despite this,we will not only justify this mean-field limit(discrete in time)but will also show that the limit,as the discrete time intervalτ→0,approaches to the solution of a nonlinear Fokker-Planck equation arising as the mean-field limit of the original interacting particle system in the Wasserstein distance. 展开更多
关键词 Random Batch Method mean field limit CHAOS Wasserstein distance nonlinear Fokker-Planck equation
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Mean field limit of a dynamical model of polymer systems
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作者 E Weinan SHEN Hao 《Science China Mathematics》 SCIE 2013年第12期2591-2598,共8页
This paper provides a mathematically rigorous foundation for self-consistent mean field theory of the polymeric physics. We study a new model for dynamics of mono-polymer systems. Every polymer is regarded as a string... This paper provides a mathematically rigorous foundation for self-consistent mean field theory of the polymeric physics. We study a new model for dynamics of mono-polymer systems. Every polymer is regarded as a string of points which are moving randomly as Brownian motions and under elastic forces. Every two points on the same string or on two different strings also interact under a pairwise potential V. The dynamics of the system is described by a system of N coupled stochastic partial differential equations (SPDEs). We show that the mean field limit as N -+ c~ of the system is a self-consistent McKean-Vlasov type equation, under suitable assumptions on the initial and boundary conditions and regularity of V. We also prove that both the SPDE system of the polymers and the mean field limit equation are well-posed. 展开更多
关键词 POLYMERS mean field limit stochastic PDEs McKean-Vlasov equation
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On Direct Limits of Finite Products of Fields as Subrings of a Commutative Ring
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作者 D. Karim 《Algebra Colloquium》 SCIE CSCD 2016年第2期243-249,共7页
Let R be a commutative ring. In this paper, we develop the existence of direct limits of finite products of fields as subrings of R.
关键词 Artinian ring direct limit of finite products of fields infinite product von Neumann regular ring zero-dimensional ring
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Approximations for a Queueing Game Model with Join-the-Shortest-Queue Strategy
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作者 Qi-Hui Bu Li-Wei Liu +1 位作者 Jia-Shan Tang Yi-Qiang Q.Zhao 《Journal of the Operations Research Society of China》 EI CSCD 2023年第3期489-504,共16页
This paper investigates a partially observable queueing system with N nodes in which each node has a dedicated arrival stream.There is an extra arrival stream to balance the load of the system by routing its customers... This paper investigates a partially observable queueing system with N nodes in which each node has a dedicated arrival stream.There is an extra arrival stream to balance the load of the system by routing its customers to the shortest queue.In addition,a reward-cost structure is considered to analyse customers'strategic behaviours.The equilibrium and socially optimal strategies are derived for the partially observable mean field limit model.Then,we show that the strategies obtained from the mean field model are good approximations to the model with finite N nodes.Finally,numerical experiments are provided to compare the equilibrium and socially optimal behaviours,including joining probabilities and social benefits for different system parameters. 展开更多
关键词 Game theory Queueing systems Mean field limit Markov process
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Multiple target localization in wireless visual sensor networks 被引量:1
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作者 Wei LI WeiZHANG 《Frontiers of Computer Science》 SCIE EI CSCD 2013年第4期496-504,共9页
Target localization is an important service in wireless visual sensor networks (WVSN). Although the problem of single target localization has been intensively studied, few consider the problem of multiple target loc... Target localization is an important service in wireless visual sensor networks (WVSN). Although the problem of single target localization has been intensively studied, few consider the problem of multiple target localization without prior target information in WVSN. In this paper, we first investigate the architecture of WVSN where data transmission is reduced to only target positions. Since target matching is a key issue in the multiple target localization, we propose a statistical method to match corresponding targets to located targets in world coordinates. In addition, we also consider scenarios where occlusion or limited field of view (FOV) occurs. The proposed method utilizes target images to the greatest extent. Our experimental results show that the proposed method obtains a more accurate result in targets localization compared with the camera discard scheme, and saves significant amounts of energy compared with other feature matching schemes. 展开更多
关键词 target localization STATISTICS wireless visualsensor networks OCCLUSION limited field of view
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A novel terminal structure for total dose irradiation hardened of a P-VDMOS 被引量:1
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作者 唐昭焕 刘嵘侃 +5 位作者 谭开洲 罗俊 胡刚毅 李儒章 任华平 王斌 《Journal of Semiconductors》 EI CAS CSCD 2014年第5期42-45,共4页
Using positive surface charge instead of traditional γ-ray total dose irradiation, the electric field distribution of a P-channel VDMOS terminal has been analyzed. A novel terminal structure for improving the total d... Using positive surface charge instead of traditional γ-ray total dose irradiation, the electric field distribution of a P-channel VDMOS terminal has been analyzed. A novel terminal structure for improving the total dose irradiation hardened of P-channel VDMOS has been proposed, and the structure is simulated and demonstrated with a -150 V P-channel VDMOS. The results show that the peak current density is reduced from 5.51 × 10^3 A/cm^2 to 2.01 × 10^3 A/cm^2, and the changed value of the breakdown voltage is 2.5 V at 500 krad(Si). Especially, using 60Co and X-ray to validate the results, which strictly match with the simulated values, there is not any added mask or process to fabricate the novel structure, of which the process is compatible with common P-channel VDMOS processes. The novel terminal structure can be widely used in total irradiation hardened P-channel VDMOS design and fabrication, which holds a great potential application in the space irradiation environment. 展开更多
关键词 P-channel VDMOS total dose irradiation hardened stop field limited ring breakdown voltage
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A Differential Algebraic Method for the Solution of the Poisson Equation for Charged Particle Beams
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作者 B.Erdelyi E.Nissen S.Manikonda 《Communications in Computational Physics》 SCIE 2015年第1期47-78,共32页
The design optimization and analysis of charged particle beam systems employing intense beams requires a robust and accurate Poisson solver.This paper presents a new type of Poisson solver which allows the effects of ... The design optimization and analysis of charged particle beam systems employing intense beams requires a robust and accurate Poisson solver.This paper presents a new type of Poisson solver which allows the effects of space charge to be elegantly included into the system dynamics.This is done by casting the charge distribution function into a series of basis functions,which are then integrated with an appropriate Green’s function to find a Taylor series of the potential at a given point within the desired distribution region.In order to avoid singularities,a Duffy transformation is applied,which allows singularity-free integration and maximized convergence region when performed with the help of Differential Algebraic methods.The method is shown to perform well on the examples studied.Practical implementation choices and some of their limitations are also explored. 展开更多
关键词 Charged particle beams mean field limit Poisson equation orthogonal polynomials differential algebra
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