A power management unit (PMU) chip supplying dual panel supply voltage, which has a low electro-magnetic interference (EMI) characteristic and is favorable for miniaturization, is designed. A two-phase charge pump cir...A power management unit (PMU) chip supplying dual panel supply voltage, which has a low electro-magnetic interference (EMI) characteristic and is favorable for miniaturization, is designed. A two-phase charge pump circuit using external pumping capacitor increases its pumping current and works out the charge-loss problem by using bulk-potential biasing circuit. A low-power start-up circuit is also proposed to reduce the power consumption of the band-gap reference voltage generator. And the ring oscillator used in the ELVSS power circuit is designed with logic devices by supplying the logic power supply to reduce the layout area. The PMU chip is designed with MagnaChip’s 0.25 μm high-voltage process. The driving currents of ELVDD and ELVSS are more than 50 mA when a SPICE simulation is done.展开更多
针对广域后备保护算法易受过渡电阻的影响,研究有限同步相量测量单元（phasor measurement unit,PMU）下基于差动有功功率（differential active power,DAP）的广域后备保护算法。将电网分为若干区域,计算各区域的正序DAP,与阈值比较,...针对广域后备保护算法易受过渡电阻的影响,研究有限同步相量测量单元（phasor measurement unit,PMU）下基于差动有功功率（differential active power,DAP）的广域后备保护算法。将电网分为若干区域,计算各区域的正序DAP,与阈值比较,判别故障区域。由有限的布置PMU母线电压推算出未布置PMU母线电压幅值,采用线路两侧的推算电压差可识别出故障区域中的故障线路。当发生高阻接地故障不能识别故障线路时,计算各线路的DAP,分析其在线路故障与正常时的差异特性。针对无分支和有分支结构,分别研究故障线路检测判据。对于有分支结构,采用动态加权因子,由各PMU侧电压电流较准确地推算未布PMU母线电压。根据未布置PMU母线各侧的推算电压之间的相位关系,构造线路正序、零序、负序DAP的故障判据。通过IEEE 39节点系统大量仿真实验验证算法的有效性。该算法能够准确检测故障线路,不受故障点位置、故障类型、负荷等影响,且在过渡电阻达到300Ω时仍能准确识别故障线路。展开更多
文摘A power management unit (PMU) chip supplying dual panel supply voltage, which has a low electro-magnetic interference (EMI) characteristic and is favorable for miniaturization, is designed. A two-phase charge pump circuit using external pumping capacitor increases its pumping current and works out the charge-loss problem by using bulk-potential biasing circuit. A low-power start-up circuit is also proposed to reduce the power consumption of the band-gap reference voltage generator. And the ring oscillator used in the ELVSS power circuit is designed with logic devices by supplying the logic power supply to reduce the layout area. The PMU chip is designed with MagnaChip’s 0.25 μm high-voltage process. The driving currents of ELVDD and ELVSS are more than 50 mA when a SPICE simulation is done.
