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Modeling and linearizing broad-band power amplifier based on real and complex-valued hybrid time-delay neural network 被引量:1
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作者 Hui Min Zhang Xingang +2 位作者 Zhang Meng Yu Chao Zhu Xiaowei 《Journal of Southeast University(English Edition)》 EI CAS 2018年第2期139-146,共8页
A new real and complex-valued hybrid time-delay neural network(TDNN)is proposed for modeling and linearizing the broad-band power amplifier(BPA).The neural network includes the generalized memory effect of input signa... A new real and complex-valued hybrid time-delay neural network(TDNN)is proposed for modeling and linearizing the broad-band power amplifier(BPA).The neural network includes the generalized memory effect of input signals,complex-valued input signals and the fractional order of a complex-valued input signal module,and,thus,the modeling accuracy is improved significantly.A comparative study of the normalized mean square error(NMSE)of the real and complex-valued hybrid TDNN for different spread constants,memory depths,node numbers,and order numbers is studied so as to establish an optimal TDNN as an effective baseband model,suitable for modeling strong nonlinearity of the BPA.A 51-dBm BPA with a 25-MHz bandwidth mixed test signal is used to verify the effectiveness of the proposed model.Compared with the memory polynomial(MP)model and the real-valued TDNN,the real and complex-valued hybrid TDNN is highly effective,leading to an improvement of 5 dB in the NMSE.In addition,the real and complex-valued hybrid TDNN has an improvement of 0.6 dB over the generalized MP model in the NMSE.Also,it has better numerical stability.Moreover,the proposed TDNN presents a significant improvement over the real-valued TDNN and the MP models in suppressing out-of-band spectral regrowth. 展开更多
关键词 power amplifier neural network linearIZATION MODELING
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A 600W Broadband Doherty Power Amplifier with Improved Linearity for Wireless Communication System
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作者 Jing Li Wenhua Chen Qian Zhang 《China Communications》 SCIE CSCD 2017年第2期21-29,共9页
An asymmetric Doherty architecture based on three identical transistors is proposed in this paper. This proposed three.way topology reduces the difficulty in designing matching networks brought by the low optimal impe... An asymmetric Doherty architecture based on three identical transistors is proposed in this paper. This proposed three.way topology reduces the difficulty in designing matching networks brought by the low optimal impedance of high power transistors. And the inverted Doherty topology as well as carefully chosen value of load impedance makes it possible to extend the bandwidth of high power amplifiers. Besides, bias networks of this proposed three.way architecture are also carefully considered to improve the linearity. The proposed high power three.way Doherty power amplifier(3W.DPA) is designed and fabricated based on theoretic analysis. Its maximum output power is about 600 Watts and the drain efficiency is above 35.5% at 9d B back off output power level from 1.9GHz to 2.2 GHz and the saturated drain efficiency is above 47% across the whole frequency band. The measured concurrent two.tone results suggest that the linearity of DPA is improved by at least 5d B. 展开更多
关键词 amplifier inverted Doherty linearITY high power
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FPGA Implementation of a Power Amplifier Linearizer for an ETSI-SDR OFDM Transmitter
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作者 Suranjana Julius Anh Dinh 《ZTE Communications》 2011年第3期22-27,共6页
Most satellite digital radio (SDR) systems use orthogonal frequency-division multiplexing (OFDM) transmission, which means that variable envelope signals are distorted by the RF power amplifier (PA). It is custo... Most satellite digital radio (SDR) systems use orthogonal frequency-division multiplexing (OFDM) transmission, which means that variable envelope signals are distorted by the RF power amplifier (PA). It is customary to back off the input power to the PA to avoid the PA nonlinear region of operation. In this way, linearity can be achieved at the cost of power efficiency. Another attractive option is to use a linearizer, which compensates for the nonlinear effects of the PA. In this paper, an OFDM transmitter conforming to European Telecommunications Standard Institute SDR Technical Specifications 2007-2008 was designed and implemented on a low-cost field-programmable gate array (FPGA) platform. A weakly nonlinear PA, operating in the L-band SDR frequency, was used for signal transmission. An adaptive linearizer was designed and implemented on the same FPGA device using digital predistortion to correct the undesired effects of the PA on the transmitted signal. Test results show that spectral distortion can be suppressed between 6-9 dB using the designed linearizer when the PA is driven close to its saturation region. 展开更多
关键词 power amplifier linearization digital predistortion ETSI-SDR OFDM FPGA
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A 28GHz Power Amplifier with Analog Predistortion Linearizer in 65nm CMOS
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作者 He Peng Yuqing Dou 《Journal of Electronic Research and Application》 2021年第2期5-10,共6页
This paper proposes that a radio frequency power amplifier is suitable for a 5G millimeter wave.It adopts a three-stage single-ended structure at 28GHz.An analog predistortion lmearization method is used to improve th... This paper proposes that a radio frequency power amplifier is suitable for a 5G millimeter wave.It adopts a three-stage single-ended structure at 28GHz.An analog predistortion lmearization method is used to improve the linearity of the power amplifier(PA).As a result,there is a significant improvement in power-added efficiency(PAE)and linearity is achieved.The Ka-band PA is implemented in TSMC 65nm CMOS process.At 1.2V supply voltage,the PA proposed in this paper achieves a saturated output power of 15.9dBm and a PAE of 16%.After linearization,the output power at the ldB compression point is increased by 2dBm,with efficient gain compensation performance. 展开更多
关键词 Millimeter wave power amplifier Predistortion linearization CMOS
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Highly efficient class-F power amplifier with digital predistortion for WCDMA applications 被引量:1
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作者 季连庆 徐志明 +1 位作者 周健义 翟建锋 《Journal of Southeast University(English Edition)》 EI CAS 2013年第2期125-128,共4页
A digital predistorted class-F power amplifier (PA) using Cree GaN HEMT CGH40010 operating at 2. 12 GHz is presented to obtain high efficiency and excellent linearity for wideband code-division multiple access ( WC... A digital predistorted class-F power amplifier (PA) using Cree GaN HEMT CGH40010 operating at 2. 12 GHz is presented to obtain high efficiency and excellent linearity for wideband code-division multiple access ( WCDMA ) applications. Measurement results with the continuous wave (CW) signals indicate that the designed class-F PA achieves a peak power-added efficiency (PAE) of 75. 2% with an output power of 39.4 dBm. The adjacent channel power ratio (ACPR) of the designed PA after digital predistortion (DPD) decreases from -28. 3 and -27. 5 dBc to -51.9 and -54. 0 dBc, respectively, for a 4-carrier 20 MHz WCDMA signal with 7. 1 dB peak to average power ratio (PAPR). The drain efficiency (DE) of the PA is 37. 8% at an average output power of 33. 3 dBm. The designed power amplifier can be aoolied in the WCDMA system. 展开更多
关键词 digital predistortion peak power-addedefficiency drain efficiency adjacent channel power ratio EFFICIENCY linearITY class-F power amplifier
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Design and Analysis of a Power Efficient Linearly Tunable Cross-Coupled Transconductor Having Separate Bias Control
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作者 Vijaya Bhadauria Krishna Kant Swapna Banerjee 《Circuits and Systems》 2012年第1期99-106,共8页
A common current source, generally used to bias cross-coupled differential amplifiers in a transconductor, controls third harmonic distortion (HD3) poorly. Separate current sources are shown to provide better control ... A common current source, generally used to bias cross-coupled differential amplifiers in a transconductor, controls third harmonic distortion (HD3) poorly. Separate current sources are shown to provide better control on HD3) . In this paper, a detailed design and analysis is presented for a transconductor made using this biasing technique. The transconductor, in addition, is made to offer high Gm, low power dissipation and is designed for linearly tunable Gm with current mode load as one of the applications. The circuit exhibits HD3) of less than –43.7 dB, high current efficiency of 1.18 V-1 and Gm of 390 μS at 1 VGp-p @ 50 MHz. UMC 0.18 μm CMOS process technology is used for simulation at supply voltage of 1.8 V. 展开更多
关键词 ANALOG electronics low power ANALOG CMOS Circuit Operational TRANSCONDUCTANCE amplifier (OTA) Multiple-output OTA (MOTA) MOS TRANSCONDUCTORS linearLY TUNABLE Gm Current efficiency linearization Techniques Harmonic Distortion Analysis
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非分段GaN HEMT EF2类功率放大器理论研究
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作者 于莉媛 徐国龙 褚泰然 《现代电子技术》 北大核心 2024年第12期15-20,共6页
目前,增强型氮化镓高电子迁移率晶体管(GaN HEMT)的仿真模型存在仿真时间长、复杂度高且收敛性不好等问题。为了解决GaN HEMT器件在电力电子电路中仿真收敛性和准确性差的问题,提出一种非分段的GaN HEMT SPICE模型。使用非分段连续方程... 目前,增强型氮化镓高电子迁移率晶体管(GaN HEMT)的仿真模型存在仿真时间长、复杂度高且收敛性不好等问题。为了解决GaN HEMT器件在电力电子电路中仿真收敛性和准确性差的问题,提出一种非分段的GaN HEMT SPICE模型。使用非分段连续方程对GaN HEMT器件的静态和动态特性进行建模;再对GaN HEMT的输出特性进行仿真,并与Si MOSFET的仿真结果进行对比。仿真结果表明,所提模型的收敛性较好,收敛速度快,有较高的准确性。另外,将此模型应用于EF2类功率放大器中,研究该模型对传输效率的影响。仿真结果进一步表明:该模型具有良好的收敛性;且当开关频率为10~20 MHz,输入功率为75 W时,输出功率可达73 W,传输效率为95%,这也证明了GaN HEMT器件可以提高EF2类功率放大器的传输效率。 展开更多
关键词 GaN HEMT EF2类放大器 I-V特性 电子电路 Si mosfet 传输效率
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基于MMC与LPA的混合功率放大器研究
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作者 万民 《舰船电子工程》 2024年第7期92-96,132,共6页
论文研究了一种基于模块化多电平变换器(MMC)和线性功率放大器(LPA)的混合功率放大器(HPA)的拓扑结构及其控制策略。混合功率放大器可以直接与高压直流电源相连,并易于进行容量拓展,可靠性高。为提升混合功率放大器的工作效率和保真度,... 论文研究了一种基于模块化多电平变换器(MMC)和线性功率放大器(LPA)的混合功率放大器(HPA)的拓扑结构及其控制策略。混合功率放大器可以直接与高压直流电源相连,并易于进行容量拓展,可靠性高。为提升混合功率放大器的工作效率和保真度,建立了系统综合电路模型,分析了影响功率放大器输出性能的主要因素,提出了相应的控制方法,并给出了控制系统的设计方案。最后通过仿真验证了混合拓扑的可行性和控制方法的正确性,其输出电压波形良好,实现了兼顾高效率和高保真的目的。 展开更多
关键词 混合功率放大器 模块化多电平变换器 线性功率放大器 高保真 高效率
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预畸变对固态雷达脉冲压缩的改善
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作者 折浩楠 姚振东 蒋权 《成都信息工程大学学报》 2024年第1期1-7,共7页
固态功率放大器是相参雷达的微波源,直接决定雷达的探测性能。功率放大器本身存在的非线性特性引起发射信号畸变,导致脉冲压缩性能降低。使用简化沃特拉(Voltera)模型对雷达发射波形激励下的功放进行建模,采用数字预畸变技术提高发射信... 固态功率放大器是相参雷达的微波源,直接决定雷达的探测性能。功率放大器本身存在的非线性特性引起发射信号畸变,导致脉冲压缩性能降低。使用简化沃特拉(Voltera)模型对雷达发射波形激励下的功放进行建模,采用数字预畸变技术提高发射信号质量。在SaXPol全固态X波段天气雷达上对预畸变算法进行测试,结果表明,发射信号在预畸变前后误差矢量幅度改善约15%,脉冲压缩后峰值旁瓣电平比下降10 dB左右。 展开更多
关键词 功率放大器 数字预畸变 Volterra模型 线性化 幅度加权
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High linearity U-band power amplifier design:a novel intermodulation point analysis method 被引量:1
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作者 Jie CUI Peipei LI Weixing SHENG 《Frontiers of Information Technology & Electronic Engineering》 SCIE EI CSCD 2023年第1期176-186,共11页
A power amplifier’s linearity determines the emission signal’s quality and the efficiency of the system.Nonlinear distortion can result in system bit error,out-of-band radiation,and interference with other channels,... A power amplifier’s linearity determines the emission signal’s quality and the efficiency of the system.Nonlinear distortion can result in system bit error,out-of-band radiation,and interference with other channels,which severely influence communication system’s quality and reliability.Starting from the third-order intermodulation point of the milimeter wave(mm-Wave)power amplifiers,the circuit’s nonlinearity is compensated for.The analysis,design,and implementation of linear class AB mm-Wave power amplifiers based on GlobalFoundries 45 nm CMOS silicon-on-insulator(SOI)technology are presented.Three single-ended and differential stacked power amplifiers have been implemented based on cascode cells and triple cascode cells operating in U-band frequencies.According to nonlinear analysis and on-wafer measurements,designs based on triple cascode cells outperform those based on cascode cells.Using single-ended measurements,the differential power amplifier achieves a measured peak power-added efficiency(PAE)of 47.2%and a saturated output power(P_(sat))of 25.2 dBm at 44 GHz.The amplifier achieves a P_(sat)higher than 23 dBm and a maximum PAE higher than 25%in the measured bandwidth from 44 GHz to 50 GHz. 展开更多
关键词 CMOS silicon-on-insulator(SOI) linearity analysis Milimeter wave(mm-Wave) power amplifier
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2.4 GHz GaAs HBT高线性度功率放大器设计
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作者 张松 傅海鹏 《浙江大学学报(工学版)》 EI CAS CSCD 北大核心 2024年第7期1524-1532,共9页
为了满足Wi-Fi 6射频前端对高线性度、高发射功率的需求,基于GaAs HBT工艺设计工作于2.4~2.5 GHz的功率放大器.利用有源自适应偏置、二次谐波阻抗控制和多级放大器失真互补实现所设计放大器的高线性输出功率,通过键合金线的高品质因子... 为了满足Wi-Fi 6射频前端对高线性度、高发射功率的需求,基于GaAs HBT工艺设计工作于2.4~2.5 GHz的功率放大器.利用有源自适应偏置、二次谐波阻抗控制和多级放大器失真互补实现所设计放大器的高线性输出功率,通过键合金线的高品质因子寄生电感降低输出匹配的插损,并将直流与射频功率检测集成.测试结果表明,所设计放大器的小信号增益为30.6~30.7 dB,输入输出回波损耗均小于-10 dB,输出1 dB压缩功率为29.2 dBm,对应功率附加效率为26.4%.在802.11ax标准、MCS7调制策略、40 MHz带宽的测试信号下,当误差矢量幅度小于-30 dB时,所设计放大器的最大输出功率为24.1 dBm.在MCS9调制策略下,当误差矢量幅度小于-35 dB时,所设计放大器的最大输出功率为23.6 dBm;在MCS11调制策略下,当误差矢量幅度小于-40 dB时,所设计放大器的最大输出功率为22.4 dBm,对应最大功率附加效率为10.2%. 展开更多
关键词 功率放大器 砷化镓 高线性度 误差矢量幅度 二次谐波阻抗
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一种改善IMD3的高线性射频功率放大器
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作者 张超然 杨以俊 孙晓红 《电子元件与材料》 CAS 北大核心 2024年第7期872-877,共6页
基于2μm砷化镓异质结双极型晶体管(GaAs HBT)工艺成功设计出了一款工作在2.4 GHz的高线性、高效率的射频功率放大器(RF PA)。针对非线性因素三阶交调失真(IMD3)对电路造成的影响,采用了一种两级功放电路结构,通过对两级偏置中的旁路电... 基于2μm砷化镓异质结双极型晶体管(GaAs HBT)工艺成功设计出了一款工作在2.4 GHz的高线性、高效率的射频功率放大器(RF PA)。针对非线性因素三阶交调失真(IMD3)对电路造成的影响,采用了一种两级功放电路结构,通过对两级偏置中的旁路电路进行调节,得到了两个反相可互消的三阶交调分量,有效地改善了功放非线性指标IMD3的值。对芯片进行测试,所得结果表明:在连续单音信号测试下,功放输出的1 dB压缩点功率(P1dB)为33.3 dBm,功率附加效率(PAE)为58%@33.3 dBm,增益为30.8 dB。在音距为1 MHz的双音信号测试下,三阶交调失真低于-50 dBc@20 dBm,最大三阶输出截断点(OIP3)为47 dBm@23.8 dBm。 展开更多
关键词 三阶交调失真 射频功率放大器 高线性度 异质结双极型晶体管
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基于SiC的雷达微波放大器高频电源设计
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作者 李楠 《舰船电子工程》 2024年第4期71-75,共5页
论文介绍了一种利用3.3 kV碳化硅(SiC)MOSFET和肖特基二极管实现22 Vdc至2.5 kVdc宽电压的1 kW电源方案。电源为舰船雷达诱饵中的固态微波功率放大器提供能量。高压碳化硅半导体用于在高频下切换高电压,且不需要串联转换器。为了消除开... 论文介绍了一种利用3.3 kV碳化硅(SiC)MOSFET和肖特基二极管实现22 Vdc至2.5 kVdc宽电压的1 kW电源方案。电源为舰船雷达诱饵中的固态微波功率放大器提供能量。高压碳化硅半导体用于在高频下切换高电压,且不需要串联转换器。为了消除开关损耗和最小化噪声,采用半桥零电压开关ZVS拓扑。还给出隔离栅极驱动和2.5 kV启动的注入解决方案。经过器件特性分析、电路设计封装和台式实验,证明高压SiC-MOSFET和肖特基二极管的组合是该应用中实现高频、高功率密度转换的有效技术。 展开更多
关键词 碳化硅场效应管 微波功率放大器 高频电源
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基于MOSFET的高频宽带线性单片功率放大器研究
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作者 袁寿财 李孟山 +2 位作者 张文 刘亚媚 宋力 《赣南师范学院学报》 2015年第6期35-38,共4页
本文基于功率MOSFET设计高频宽带线性功率放大器单片集成电路,主要针对功率放大器自身功耗和因高频下电路容性负载引起的信号相移及与此有关的功率放大器的效率问题.特别是选用高频功率MOSFET器件,通过电路优化设计使功放的转换速率达... 本文基于功率MOSFET设计高频宽带线性功率放大器单片集成电路,主要针对功率放大器自身功耗和因高频下电路容性负载引起的信号相移及与此有关的功率放大器的效率问题.特别是选用高频功率MOSFET器件,通过电路优化设计使功放的转换速率达到最大,频带宽度达5-135 MHZ,在60 MHZ频率下,放大器的线性度为1 d B增益压缩点,在20-110 MHZ频率范围内,输入功率12 d B时,放大器的平均和最大增益分别为51.8 d B和53.5 d B,放大器的增益稳定性测试表明,频率60 MHZ,输入功率6 d B时,放大器的增益在24 d B-29 d B区间内波动. 展开更多
关键词 功率mosfet 功率放大器 单片集成电路 研究 宽带
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新一代多表位三相直接式电能表检验装置研制
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作者 徐永进 吕几凡 +3 位作者 黄小琼 徐林松 顾葳 严文杰 《微型电脑应用》 2024年第10期54-57,共4页
由于传统的三相直接式电能表检定装置逐渐不能满足R46国际标准的检定工作需求,设计一种符合R46国际标准的新一代多表位三相直接式电能表检验装置,该装置主要由信号源、线性功率放大器、三相标准电能表、误差计算器、穿心隔离式电流互感... 由于传统的三相直接式电能表检定装置逐渐不能满足R46国际标准的检定工作需求,设计一种符合R46国际标准的新一代多表位三相直接式电能表检验装置,该装置主要由信号源、线性功率放大器、三相标准电能表、误差计算器、穿心隔离式电流互感器、蓝牙通信转换器等组成。可以对2013版智能电能表、2020版智能电能表以及智能物联电能表进行兼容测试,完成基本误差、潜起动、电能表常数、电能表示值误差、计时准确度等常规测试项目,同时还能满足谐波电能准确度、谐波测量准确度等R46国际标准新增测试项目的要求。测试结果表明,该装置在同时检测32只直接式电能表时,可以稳定可靠地工作,技术指标满足设计要求。 展开更多
关键词 电能表检验装置 R46 多表位 线性功率放大器
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梯度放大器中MOSFET器件功率损耗分析 被引量:1
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作者 王斌 蒋晓华 《电源学报》 CSCD 2013年第1期39-44,共6页
为分析梯度放大器样机中MOSFET器件的功率损耗,建立了适用于样机使用的MOSFET的器件行为模型,并通过简化实际电路的方法建立了仿真分析电路。在此基础上完成了不同工作状况下MOSFET器件及负载的功率损耗仿真分析;同时在梯度放大器样机... 为分析梯度放大器样机中MOSFET器件的功率损耗,建立了适用于样机使用的MOSFET的器件行为模型,并通过简化实际电路的方法建立了仿真分析电路。在此基础上完成了不同工作状况下MOSFET器件及负载的功率损耗仿真分析;同时在梯度放大器样机上完成了相应工作状况的实验测量。仿真分析数据和实验结果表明了,二者对应波形吻合,且不同工作状况下功率损耗的计算结果误差在±10%以内,仿真分析可有效的应用于器件功率损耗分析。 展开更多
关键词 梯度放大器 mosfet建模 功率损耗
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硅基MOSFET功率放大器TO-3封装热性能研究 被引量:2
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作者 李平 吴潇巍 周金清 《半导体技术》 CAS 北大核心 2021年第4期310-315,共6页
针对某款硅基MOSFET功率放大器TO-3封装散热问题,研究了其内部2个功率芯片在35 W下的热性能。通过建立该款功率放大器TO-3封装的有限元仿真模型,采用热仿真软件对这2个功率芯片的间距、焊片材料和厚度以及基板材料和厚度进行仿真优化,... 针对某款硅基MOSFET功率放大器TO-3封装散热问题,研究了其内部2个功率芯片在35 W下的热性能。通过建立该款功率放大器TO-3封装的有限元仿真模型,采用热仿真软件对这2个功率芯片的间距、焊片材料和厚度以及基板材料和厚度进行仿真优化,分析各个变量对芯片结温的影响。仿真结果表明在管基材料确定的情况下,氧化铍基板和金锡焊片对器件散热有较明显的效果。选用2.5 mm厚的10#钢和其他优化参数进行仿真,结果显示芯片位置处的温度最高,最高温度约为88℃。通过制备相应产品对比了优化前后该款功率放大器的温度变化,测试结果显示优化后器件热阻从2.015℃/W降低到1.535℃/W,产品散热效率提高了约23%。 展开更多
关键词 Si mosfet TO-3封装 热分析 功率放大器
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The Design of Drive Circuit with High-power Output for Two-phase Hybrid Stepping Motor Based on BY-5064 被引量:1
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作者 MA Xiao-jiao LI Cheng-gui CAI Zheng ZHAO Li-guo 《Computer Aided Drafting,Design and Manufacturing》 2011年第1期28-32,共5页
A kind of drive circuit which high-power output for stepping motor, based two-phase hybrid stepping motor are designed, achieved. is low power consumption, high-performance and on BY-5064, and a kind of dedicated circ... A kind of drive circuit which high-power output for stepping motor, based two-phase hybrid stepping motor are designed, achieved. is low power consumption, high-performance and on BY-5064, and a kind of dedicated circuit for drive control for stepping motor with high-power is 展开更多
关键词 BY-5064 mosfet H-BRIDGE power amplifier
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Adaptation of a Digitally Predistorted RF Amplifier Using Selective Sampling
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作者 R. Neil Braithwaite 《ZTE Communications》 2011年第3期3-12,共10页
In this paper, a reduced-cost method of measuring residual nonlinearities in an adaptive digitally predistorted amplifier is proposed. Measurements obtained by selective sampling of the amplifier output are integrated... In this paper, a reduced-cost method of measuring residual nonlinearities in an adaptive digitally predistorted amplifier is proposed. Measurements obtained by selective sampling of the amplifier output are integrated over the input envelope range to adapt a fourth-order polynomial predistorter with memory correction. Results for a WCDMA input with a 101 carrier configuration show that a transmitter using the proposed method can meet the adjacent channel leakage ratio (ACLR) specification. Inverse modeling of the nonlinearity is proposed as a future extension that will reduce the cost of the system further. 展开更多
关键词 amplifier distortion communication system nonlinearities power amplifier linearization
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高输出功率高线性度5G毫米波功率放大器研究与设计 被引量:1
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作者 王喜瑜 刘新阳 +4 位作者 欧阳可青 胡劼 陆敏 陈志林 马宵宵 《中国集成电路》 2023年第3期58-64,共7页
本文针对5G毫米波功率放大器(Power amplifier, PA)高输出功率和高线性度的需求,对PA功率和线性度受限机理进行了深入分析。在此基础上,提出了一种采用峰化电感技术和两路合成结构提升输出功率,以及采用PMOS补偿电容、二阶谐波和低阻抗... 本文针对5G毫米波功率放大器(Power amplifier, PA)高输出功率和高线性度的需求,对PA功率和线性度受限机理进行了深入分析。在此基础上,提出了一种采用峰化电感技术和两路合成结构提升输出功率,以及采用PMOS补偿电容、二阶谐波和低阻抗网络来改善宽带调制下线性度的PA电路。基于5G毫米波26GHz频段应用,该PA采用65nm CMOS SOI工艺进行实现。测试结果表明,该PA在26GHz,实现了20.8dBm的OP1dB和21.3dBm的Psat,峰值PAE为26.15%。在调制信号测试中,使用5G NR 400 MHz 1-CC 64-QAM和256-QAM OFDM信号,该PA支持5%和3%的均方根误差矢量幅度(EVM),和实现平均输出功率(Pavg)分别为15.5dBm和14.4dBm。 展开更多
关键词 毫米波(mmW) 26GHz 第五代(5G) 新型无线电(NR) 功率放大器(PA) 256-QAM 线性度
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