The electronic density of states and band structures of doped and un-doped anatase TiO2 were studied by the Linearized Augmented Plane Wave method based on the density functional theory. The calculation shows that the...The electronic density of states and band structures of doped and un-doped anatase TiO2 were studied by the Linearized Augmented Plane Wave method based on the density functional theory. The calculation shows that the band structures of TiO2 crystals doped with transition metal atoms become narrower. Interesting, an excursion towards high energy level with increasing atomic number in the same element period could be observed after doping with transition metal atoms.展开更多
We present a stable linear-cavity single longitudinal mode （SLM） erbium-doped silica fiber laser. It consists of four fiber Bragg gratings （FBGs） directly written in a section of photosensitive erbium-doped fiber ...We present a stable linear-cavity single longitudinal mode （SLM） erbium-doped silica fiber laser. It consists of four fiber Bragg gratings （FBGs） directly written in a section of photosensitive erbium-doped fiber （EDF） to form an asymmetric three-cavity structure. The stable SLM operation at a wavelength of 1545.112 nm with a 3-dB bandwidth of 0.012 nm and an optical signal-to-noise ratio （OSNR） of about 60 dB is verified experimentally. Under laboratory conditions, the performance of a power fluctuation of less than 0.05 dB observed from the power meter for 6 h and a wavelength variation of less than 0.01 nm obtained from the optical spectrum analyzer （OSA） for about 1.5 h are demonstrated. The gain fiber length is no longer limited to only several centimeters for SLM operation because of the excellent mode-selecting ability of the asymmetric three-cavity structure. The proposed scheme provides a simple and cost-effective approach to realizing a stable SLM fiber laser.展开更多
A mathematical model for the estimation of oxygen-ion conductivity of doped ZrO2 and CeO2 electrolytes was established based on the assumptions that the electronic conduction and defect association can be neglected. A...A mathematical model for the estimation of oxygen-ion conductivity of doped ZrO2 and CeO2 electrolytes was established based on the assumptions that the electronic conduction and defect association can be neglected. A linear regression method was employed to determine the parameters in the model. This model was confirmed by the published conductivity data of the doped ZrO2 and CeO2 electrolytes. In addition, a series of compositions in Ce0.8Gd0.2-xMxO1.9-δsystem (M is the co-dopant) was prepared, their high temperature conductivity were measured. The model was further validated by the measured conductivity data.展开更多
A unified breakdown model of SOI RESURF device with uniform,step,or linear drift region doping profile is firstly proposed.By the model,the electric field distribution and breakdown voltage are researched in detail fo...A unified breakdown model of SOI RESURF device with uniform,step,or linear drift region doping profile is firstly proposed.By the model,the electric field distribution and breakdown voltage are researched in detail for the step numbers from 0 to infinity.The critic electric field as the function of the geometry parameters and doping profile is derived.For the thick film device,linear doping profile can be replaced by a single or two steps doping profile in the drift region due to a considerable uniformly lateral electric field,almost ideal breakdown voltage,and simplified design and fabrication.The availability of the proposed model is verified by the good accordance among the analytical results,numerical simulations,and reported experiments.展开更多
Based on the theoretical and experimental investigation of a thin silicon layer（TSL） with linear variable doping（LVD） and further research on the TSL LVD with a multiple step field plate（MSFP）,a breakdown voltag...Based on the theoretical and experimental investigation of a thin silicon layer（TSL） with linear variable doping（LVD） and further research on the TSL LVD with a multiple step field plate（MSFP）,a breakdown voltage（BV） model is proposed and experimentally verified in this paper.With the two-dimensional Poisson equation of the silicon on insulator（SOI） device,the lateral electric field in drift region of the thin silicon layer is assumed to be constant.For the SOI device with LVD in the thin silicon layer,the dependence of the BV on impurity concentration under the drain is investigated by an enhanced dielectric layer field（ENDIF）,from which the reduced surface field（RESURF） condition is deduced.The drain in the centre of the device has a good self-isolation effect,but the problem of the high voltage interconnection（HVI） line will become serious.The two step field plates including the source field plate and gate field plate can be adopted to shield the HVI adverse effect on the device.Based on this model,the TSL LVD SOI n-channel lateral double-diffused MOSFET（nLDMOS） with MSFP is realized.The experimental breakdown voltage（BV） and specific on-resistance（R on,sp） of the TSL LVD SOI device are 694 V and 21.3 ·mm 2 with a drift region length of 60 μm,buried oxide layer of 3 μm,and silicon layer of 0.15 μm,respectively.展开更多
In the framework of effective mass approximation, we theoretically investigate the electronic structure of the Si δ-doped InAIN/GaN single quantum well by solving numerically the coupled equations Schrodinger-Poisson...In the framework of effective mass approximation, we theoretically investigate the electronic structure of the Si δ-doped InAIN/GaN single quantum well by solving numerically the coupled equations Schrodinger-Poisson self-consistently. The linear, nonlinear optical absorption coefficients and relative refractive index changes are calculated as functions of the doping concentration and its thickness. The obtained results show that the position and the amplitude of the linear and total optical absorption coefficients and the refractive index changes can be modified by varying the doping concentration and its thickness. In addition, it is found that the maximum of the optical absorption can be red-shifted or blue-shifted by varying the doping concentration. The obtained results are important for the design of various electronic components such as high-power FETs and infrared photonic devices.展开更多
文摘The electronic density of states and band structures of doped and un-doped anatase TiO2 were studied by the Linearized Augmented Plane Wave method based on the density functional theory. The calculation shows that the band structures of TiO2 crystals doped with transition metal atoms become narrower. Interesting, an excursion towards high energy level with increasing atomic number in the same element period could be observed after doping with transition metal atoms.
基金Project supported by the National Natural Science Foundation of China (Grant Nos. 61077069 and 61107094)the Innovation Foundation for Excellent Doctoral Candidates of Beijing Jiaotong University, China (Grant No. 2011YJS202)
文摘We present a stable linear-cavity single longitudinal mode （SLM） erbium-doped silica fiber laser. It consists of four fiber Bragg gratings （FBGs） directly written in a section of photosensitive erbium-doped fiber （EDF） to form an asymmetric three-cavity structure. The stable SLM operation at a wavelength of 1545.112 nm with a 3-dB bandwidth of 0.012 nm and an optical signal-to-noise ratio （OSNR） of about 60 dB is verified experimentally. Under laboratory conditions, the performance of a power fluctuation of less than 0.05 dB observed from the power meter for 6 h and a wavelength variation of less than 0.01 nm obtained from the optical spectrum analyzer （OSA） for about 1.5 h are demonstrated. The gain fiber length is no longer limited to only several centimeters for SLM operation because of the excellent mode-selecting ability of the asymmetric three-cavity structure. The proposed scheme provides a simple and cost-effective approach to realizing a stable SLM fiber laser.
基金Project(2004ABA078) supported by the Natural Science Foundation of Hubei Province
文摘A mathematical model for the estimation of oxygen-ion conductivity of doped ZrO2 and CeO2 electrolytes was established based on the assumptions that the electronic conduction and defect association can be neglected. A linear regression method was employed to determine the parameters in the model. This model was confirmed by the published conductivity data of the doped ZrO2 and CeO2 electrolytes. In addition, a series of compositions in Ce0.8Gd0.2-xMxO1.9-δsystem (M is the co-dopant) was prepared, their high temperature conductivity were measured. The model was further validated by the measured conductivity data.
文摘A unified breakdown model of SOI RESURF device with uniform,step,or linear drift region doping profile is firstly proposed.By the model,the electric field distribution and breakdown voltage are researched in detail for the step numbers from 0 to infinity.The critic electric field as the function of the geometry parameters and doping profile is derived.For the thick film device,linear doping profile can be replaced by a single or two steps doping profile in the drift region due to a considerable uniformly lateral electric field,almost ideal breakdown voltage,and simplified design and fabrication.The availability of the proposed model is verified by the good accordance among the analytical results,numerical simulations,and reported experiments.
基金Project supported partially by the National Natural Science Foundation of China (Grant Nos. 60906038 and 61076082)
文摘Based on the theoretical and experimental investigation of a thin silicon layer（TSL） with linear variable doping（LVD） and further research on the TSL LVD with a multiple step field plate（MSFP）,a breakdown voltage（BV） model is proposed and experimentally verified in this paper.With the two-dimensional Poisson equation of the silicon on insulator（SOI） device,the lateral electric field in drift region of the thin silicon layer is assumed to be constant.For the SOI device with LVD in the thin silicon layer,the dependence of the BV on impurity concentration under the drain is investigated by an enhanced dielectric layer field（ENDIF）,from which the reduced surface field（RESURF） condition is deduced.The drain in the centre of the device has a good self-isolation effect,but the problem of the high voltage interconnection（HVI） line will become serious.The two step field plates including the source field plate and gate field plate can be adopted to shield the HVI adverse effect on the device.Based on this model,the TSL LVD SOI n-channel lateral double-diffused MOSFET（nLDMOS） with MSFP is realized.The experimental breakdown voltage（BV） and specific on-resistance（R on,sp） of the TSL LVD SOI device are 694 V and 21.3 ·mm 2 with a drift region length of 60 μm,buried oxide layer of 3 μm,and silicon layer of 0.15 μm,respectively.
基金Supported by the Deanship of Scientific Research of University of Dammam under Grant No 2015134
文摘In the framework of effective mass approximation, we theoretically investigate the electronic structure of the Si δ-doped InAIN/GaN single quantum well by solving numerically the coupled equations Schrodinger-Poisson self-consistently. The linear, nonlinear optical absorption coefficients and relative refractive index changes are calculated as functions of the doping concentration and its thickness. The obtained results show that the position and the amplitude of the linear and total optical absorption coefficients and the refractive index changes can be modified by varying the doping concentration and its thickness. In addition, it is found that the maximum of the optical absorption can be red-shifted or blue-shifted by varying the doping concentration. The obtained results are important for the design of various electronic components such as high-power FETs and infrared photonic devices.
