Two-photon polymerization lithography for imaging optics

Optical imaging systems have greatly extended human visual capabilities,enabling the observation and understanding of diverse phenomena.Imaging technologies span a broad spectrum of wavelengths from x-ray to radio frequencies and impact research activities and our daily lives.Traditional glass lenses are fabricated through a series of complex processes,while polymers offer versatility and ease of production.However,modern applications often require complex lens assemblies,driving the need for miniaturization and advanced designs with micro-and nanoscale features to surpass the capabilities of traditional fabrication methods.Three-dimensional(3D)printing,or additive manufacturing,presents a solution to these challenges with benefits of rapid prototyping,customized geometries,and efficient production,particularly suited for miniaturized optical imaging devices.Various 3D printing methods have demonstrated advantages over traditional counterparts,yet challenges remain in achieving nanoscale resolutions.Two-photon polymerization lithography(TPL),a nanoscale 3D printing technique,enables the fabrication of intricate structures beyond the optical diffraction limit via the nonlinear process of two-photon absorption within liquid resin.It offers unprecedented abilities,e.g.alignment-free fabrication,micro-and nanoscale capabilities,and rapid prototyping of almost arbitrary complex 3D nanostructures.In this review,we emphasize the importance of the criteria for optical performance evaluation of imaging devices,discuss material properties relevant to TPL,fabrication techniques,and highlight the application of TPL in optical imaging.As the first panoramic review on this topic,it will equip researchers with foundational knowledge and recent advancements of TPL for imaging optics,promoting a deeper understanding of the field.By leveraging on its high-resolution capability,extensive material range,and true 3D processing,alongside advances in materials,fabrication,and design,we envisage disruptive solutions to current challenges and a promising incorporation of TPL in future optical imaging applications.

Primary Results of Ipomoea nil (L.) Roth. of Introduction Conditions in Tashkent Botanical Garden

The article is devoted to the study of bioecological features of Ipomoea nil in the conditions of the Tashkent Botanical Garden. Seeds were sown 8 - 10 cm deep in the first decade of April. Seed germination averaged 85% - 90%. The beginning of vegetation and leaf regrowth in Tashkent is observed in the second decade of April. The flowering phase was observed in the first decade of August and fruiting was noted in the first decade of September. Biometric indicators of the plant during the generative phase were revealed as follows: plant height 2.95 ± 0.22 m, generative shoot length 2.62 ± 0.24 m, number of leaves 46.5 ± 3.59 pcs., leaf length 10.11 ± 0.49 cm, root length 19.85 ± 0.88 cm, number of flowers 42.8 ± 2.37 pcs., flower diameter 4.82 ± 0.28 cm. Potential seed productivity (PSP) of the plant was noted 13.5 ± 0.5 pcs., real seed productivity (RSP) was 10.8 ± 0.44 pcs. And in turn, the seed productivity coefficient (SPC) amounted to 80.0% ± 1.31%. The primary results prove, according to the success of Ipomoea nil introduction, the noted indicators in Tashkent conditions.

Fast source mask co-optimization method for high-NA EUV lithography

Extreme ultraviolet(EUV)lithography with high numerical aperture(NA)is a future technology to manufacture the integrated circuit in sub-nanometer dimension.Meanwhile,source mask co-optimization(SMO)is an extensively used approach for advanced lithography process beyond 28 nm technology node.This work proposes a novel SMO method to improve the image fidelity of high-NA EUV lithography system.A fast high-NA EUV lithography imaging model is established first,which includes the effects of mask three-dimensional structure and anamorphic magnification.Then,this paper develops an efficient SMO method that combines the gradient-based mask optimization algorithm and the compressivesensing-based source optimization algorithm.A mask rule check(MRC)process is further proposed to simplify the optimized mask pattern.Results illustrate that the proposed SMO method can significantly reduce the lithography patterning error,and maintain high computational efficiency.

New Game, New Stressors: Collegiate Men’s Basketball Coaches’ Mental Health in the NIL and Transfer Portal Era

Coaches experience considerable stress and anxiety in their pursuit of both team and individual success. Although there has been an increase in research aimed at promoting and managing the mental health of student-athletes, the mental well-being of coaches remains underexplored. Research indicates that the mental health profiles of coaches are similar to those of elite athletes [1] and should receive comparable attention. The introduction of Name, Image, and Likeness (NIL) legislation, along with the rise of the Transfer Portal in collegiate athletics, has presented student-athletes with new and unexpected options, which also bring novel challenges to coaches and potentially impact elite-level coaches’ mental health. This manuscript will identify three categories of stressors—performance, organizational, and self-related—that affect elite men’s college basketball coaches, highlighting how NIL and the Transfer Portal exacerbate those stressors and their impact on coaches’ mental health.

Real-time generation of circular patterns in electron beam lithography

Electron beam lithography(EBL)involves the transfer of a pattern onto the surface of a substrate byfirst scanning a thin layer of organicfilm(called resist)on the surface by a tightly focused and precisely controlled electron beam(exposure)and then selectively removing the exposed or nonexposed regions of the resist in a solvent(developing).It is widely used for fabrication of integrated cir-cuits,mask manufacturing,photoelectric device processing,and otherfields.The key to drawing circular patterns by EBL is the graphics production and control.In an EBL system,an embedded processor calculates and generates the trajectory coordinates for movement of the electron beam,and outputs the corresponding voltage signal through a digital-to-analog converter(DAC)to control a deflector that changes the position of the electron beam.Through this procedure,it is possible to guarantee the accuracy and real-time con-trol of electron beam scanning deflection.Existing EBL systems mostly use the method of polygonal approximation to expose circles.A circle is divided into several polygons,and the smaller the segmentation,the higher is the precision of the splicing circle.However,owing to the need to generate and scan each polygon separately,an increase in the number of segments will lead to a decrease in the overall lithography speed.In this paper,based on Bresenham’s circle algorithm and exploiting the capabilities of afield-programmable gate array and DAC,an improved real-time circle-producing algorithm is designed for EBL.The algorithm can directly generate cir-cular graphics coordinates such as those for a single circle,solid circle,solid ring,or concentric ring,and is able to effectively realizes deflection and scanning of the electron beam for circular graphics lithography.Compared with the polygonal approximation method,the improved algorithm exhibits improved precision and speed.At the same time,the point generation strategy is optimized to solve the blank pixel and pseudo-pixel problems that arise with Bresenham’s circle algorithm.A complete electron beam deflection system is established to carry out lithography experiments,the results of which show that the error between the exposure results and the preset pat-terns is at the nanometer level,indicating that the improved algorithm meets the requirements for real-time control and high precision of EBL.

碳氮共渗M50NiL钢的磨削变质层微观组织和力学性能研究

以碳氮共渗热处理后的M50NiL钢为研究对象,对不同粒度砂轮磨削后试样的表层微观形貌、表层组织结构、残余应力、显微硬度等进行了研究分析。研究结果表明,磨削后的试样表层变质层为非常细小的形变马氏体组织+奥氏体组织,为纳米晶区,晶面扭转现象明显,奥氏体含量与磨削热有直接关系,磨削后的表面变质层可分为3个部分,0~20μm的表层磨削热变质层、20~70μm的高硬度变质层及70~200μm的扩散变质层。为降低砂轮粒度对变质层组织性能的影响,可在磨削后去除适量的表面磨削变质层,但去除量不能超过磨削热变质层区的范围,以获得最佳的材料服役特性。

Nil G-*-Clean Rings

A ring is called nil G-*-clean ring if each of its elements is a sum of a G-projection and a nilpotent.In this paper,we study the basic properties of this ring and some relations with other rings.We prove that R is nil G-*-clean if(G(R)+J)/J=G(R/J)=and only if is nil,and is nil G-*-clean.

孕穗期NILs的耐冷相关性状的相关分析及聚类分析

用耐冷性极强的地方品种与十和田配制的NILs及亲本共84份材料,分别种在昆明和阿子营,通过相关和聚类分析,结果表明:(1)在昆明,结实率与花药长、倒二节长、实粒数、秕粒数之间相关系数较大,结实率、花药长、倒二节长、实粒数、秕粒数这几个性状与耐冷性的关系较密切。(2)在阿子营,结实率与花药长、株高、穗长、实粒数、秕粒数、总粒数之间相关达极显著水平,表明移栽至成熟期极端冷害下造成结实率降低,对整个植株生长发育均有抑制作用。(3)在昆明,84个材料18个性状聚类没有明显的类间区别,13个性状聚类可划分为2大类;在阿子营,78个材料8个性状聚类可划分为4类。(4)结实率作为耐冷性指标是较可靠的,在极端冷害下,可参考花药长等其他耐冷性指标。

M50NiL高温渗碳轴承钢中Fe_2Mo析出相的电镜观察

应用高分辨电子显微镜(HREM)观察M50NiL高温渗碳轴承钢中的马氏体和强化相Fe2Mo的形貌、结构及其与马氏体的取向关系。分析结果表明:M50NiL高温渗碳轴承钢心部组织主要为板条马氏体,表层组织主要为片状马氏体,其亚结构孪晶的孪生面为{211}晶面族;M50NiL钢中观察到纳米级强化相Fe2Mo,长条状,宽约2～3nm;部分Fe2Mo沿马氏体的孪生面生长,生长方向为[111]M;纳米级强化相Fe2Mo与马氏体的取向关系为:{112}M//{001}Fe2Mo,[1 11]M//[100]Fe2Mo。

A Kernel-Based Convolution Method to Calculate Sparse Aerial Image Intensity for Lithography Simulation

Optical proximity correction (OPC) systems require an accurate and fast way to predict how patterns will be transferred to the wafer.Based on Gabor's 'reduction to principal waves',a partially coherent imaging system can be represented as a superposition of coherent imaging systems,so an accurate and fast sparse aerial image intensity calculation algorithm for lithography simulation is presented based on convolution kernels,which also include simulating the lateral diffusion and some mask processing effects via Gaussian filter.The simplicity of this model leads to substantial computational and analytical benefits.Efficiency of this method is also shown through simulation results.

运用近等基因系(NIL)、AFLP、RFLP和SCAR标记对玉米S组育性恢复基因(Rf_3)的研究

以１对近等基因系（ＮＩＬ）及其回交群体（ＢＣ１）为材料，采用ＢＳＡ法，利用ＡＦＬＰ技术，筛选与Ｒｆ３基因连锁的分子标记。在筛选的１２８个ＡＦＬＰ引物组合中，有２个能在ＮＩＬ及其可育池、不育池间扩增出多态性条带ＲＲ６和ＲＲ７。１００个ＢＣ１个体验证结果表明，ＡＦＬＰ标记ＲＲ６扩增产物中仅出现２个重组体，重组率２％，由此估测ＲＲ６距Ｒｆ６基因约２．０ｃＭ。并成功地将此标记转化为 ＳＣＡＲ标记，进行了ＮＩＬ和 ＢＣ１个体的特异性扩增。在来自综 ３ × Ｐ１３８的Ｆ２：３的群体上经ＲＦＬＰ分析后，将ＲＲ６定位于第二染色体的长臂上。不仅为辅助育种奠定了基础，而且为克隆Ｒｆ３基因提供了有益的信息。

A New Method to Retrieve Proximity Effect Parameters in Electron-Beam Lithography

A new method for determining proximity parameters α,β ,and η in electron beam lithography is introduced on the assumption that the point exposure spread function is composed of two Gaussians.A single line is used as test pattern to determine proximity effect parameters and the normalization approach is adopted in experimental data transaction in order to eliminate the need of measuring exposure clearing dose of the resist.Furthermore,the parameters acquired by this method are successfully used for proximity effect correction in electron beam lithography on the same experimental conditions.

完全单半群的nil-扩张上的群同余

论述了完全单半群的nil-扩张上的群同余与同余子半群之间的一一对应关系,即每个同余子半群可诱导出一个群同余,而每个群同余的核是一个同余子半群.

nil-α-相容环

给出nil-α-相容环的定义,讨论nil-α-相容环与相关环之间的关系.研究nil-α-相容环的相关性质和基本扩张.特别地,推广已有的相关结论.

数控机床轴承钢M50NiL表面处理及性能研究

采用多弧离子镀的方法在轴承钢表面沉积了Ti N涂层,研究了偏压和弧流对轴承钢表面涂层物相组成、显微硬度、硬度和结合力的影响。结果表明,不同偏压和弧流作用下,轴承钢表面涂层的物相都主要由Ti N相、Ti相和马氏体(M)相组成,偏压和弧流的变化会改变物相的相对含量,但是物相组成不发生改变;偏压和弧流的变化会影响涂层表面白色颗粒以及显微凹坑的数量和大小;轴承钢M50Ni L适宜的离子镀偏压和弧流分别为250 V和65 A,此时涂层具有最高的硬度和结合力。

软膜紫外光固化纳米压印中Amonil光刻胶的刻蚀参数优化(英文)

报道了反应离子刻蚀转移图形过程中对Amonil光刻胶的刻蚀参数优化的结果.利用软膜紫外光固化纳米压印技术,首先制备了线宽/间距均为200 nm的纳米光栅结构.然后采用反应离子刻蚀的方法去除残留的Amonil光刻胶.研究了不同的气体组成、射频功率、压强和气体流量对刻蚀形貌、表面粗糙度以及刻蚀速度的影响.在优化的工艺条件下,获得了理想的具有垂直侧壁形貌和较小表面粗糙度的纳米光栅阵列.结果表明,选择优化的刻蚀工艺参数,既能有效地改善图形转移的性能,同时也能提高所制备结构的光学应用特性.

一类Clifford半群的nil-扩张上的群同余

在Clifford半群的nil-扩张中引入了正规子半群的概念,利用正规子半群给出了Clifford半群的nil-扩张上的同余子半群的概念.以同余子半群作为工具,构造了Clifford半群的nil-扩张上的群同余,最后证明了当一个Clifford半群A的幂等元集E(A)存在最小元eo时,A的nil-扩张S上的群同余和eo所在的H类的nil-扩张上的群同余是同构的.

Fabrication of Silicon Crystal-Facet-Dependent Nanostructures by Electron-Beam Lithography

Silicon crystal-facet-dependent nanostructures have been successfully fabricated on a （100）-oriented silicon-oninsulator wafer using electron-beam lithography and the silicon anisotropic wet etching technique. This technique takes advantage of the large difference in etching properties for different crystallographic planes in alkaline solution. The minimum size of the trapezoidal top for those Si nanostructures can be reduced to less than 10nm. Scanning electron microscopy （SEM） and atomic force microscopy （AFM） observations indicate that the etched nanostructures have controllable shapes and smooth surfaces.

Nano-Level Electron Beam Lithography

The JEOL JBX-5000LS is a vector type machine.The system hardware features an ion-pumped column,a LaB 6 electron emitter,25kV and 50kV accelerating voltage,and a turbo-pumped sample chamber.The resolution,stability,stitching and overlay of this system are evaluated.The system can write complex patterns at dimensions down to 30nm.The demonstrated overlay accuracy of this system is better than 40nm.

Research on the Mutants of Pharbitis nil

[Objective]The research aimed at investigating mechanisms of the changes of pharbitis.nil flower colors and leaf colors.[Method]The recombinant plasmid pMD18-T/Tpn was constructed by amplifying the target fragments from young leaf tissues of the blue and white mutant of Pharbitis nil with PCR technology and investigating in the fields.[Result]The results of investigations in the fields suggested that the mutant was segregated in F3 generation,and the mutations of leaf colors did not affect the changes of flower colors.The results of PCR amplification showed that there was a band about 330 bp in genomic DNA of Lanbai,Chunlan,Dahua,respectively,however,no bands were found in genomic DNA of Chunguang,Baixue,Ping＇anhong and Chuiman.[Conclusion]The sequence of recombinant plasmid of the mutant was indeed a fragment of the transposon of Pharbitis nil.