Extreme ultraviolet(EUV)lithography with high numerical aperture(NA)is a future technology to manufacture the integrated circuit in sub-nanometer dimension.Meanwhile,source mask co-optimization(SMO)is an extensively u...Extreme ultraviolet(EUV)lithography with high numerical aperture(NA)is a future technology to manufacture the integrated circuit in sub-nanometer dimension.Meanwhile,source mask co-optimization(SMO)is an extensively used approach for advanced lithography process beyond 28 nm technology node.This work proposes a novel SMO method to improve the image fidelity of high-NA EUV lithography system.A fast high-NA EUV lithography imaging model is established first,which includes the effects of mask three-dimensional structure and anamorphic magnification.Then,this paper develops an efficient SMO method that combines the gradient-based mask optimization algorithm and the compressivesensing-based source optimization algorithm.A mask rule check(MRC)process is further proposed to simplify the optimized mask pattern.Results illustrate that the proposed SMO method can significantly reduce the lithography patterning error,and maintain high computational efficiency.展开更多
Particle-In-Cell(PIC)simulations were performed in this work to study the dynamics of the EUVinduced hydrogen plasma.The Monte-Carlo Collision(MCC)model was employed to deal with the collisions between charged particl...Particle-In-Cell(PIC)simulations were performed in this work to study the dynamics of the EUVinduced hydrogen plasma.The Monte-Carlo Collision(MCC)model was employed to deal with the collisions between charged particles and background gas molecules.The dynamic evolution of the plasma sheath,as well as the flux and energy distribution of ions impacting on the mirror surface,was discussed.It was found that the emission of secondary electrons under the EUV irradiation on the ruthenium mirror coating creates a positively charged wall and then prevents the ions from impacting on the mirror and therefore changes the flux and energy distribution of ions reaching the mirror.Furthermore,gas pressure has a notable effect on the plasma sheath and the characteristics of the ions impinging on the mirrors.With greater gas pressure,the sheath potential decreases more rapidly.The flux of ions received by the mirror grows approximately linearly and at the same time the energy corresponding to the peak flux decreases slightly.However,the EUV source intensity barely changes the sheath potential,and its influence on the ion impact is mainly limited to the approximate linear increase in ion flux.展开更多
The development of nanoelectronics and nanotechnologies has been boosted significantly by the emergence of 2D materials because of their atomic thickness and peculiar properties,and developing a universal,precise patte...The development of nanoelectronics and nanotechnologies has been boosted significantly by the emergence of 2D materials because of their atomic thickness and peculiar properties,and developing a universal,precise patterning technology for single-layer 2D materials is critical for assembling nanodevices.Demonstrated here is a nanomachining technique using electrical breakdown by an AFM tip to fabricate nanopores,nanostrips,and other nanostructures on demand.This can be achieved by voltage scanning or applying a constant voltage while moving the tip.By measuring the electrical current,the formation process on single-layer materials was shown quantitatively.The present results provide evidence of successful pattern fabrication on single-layer MoS2,boron nitride,and graphene,although further confirmation is still needed.The proposed method holds promise as a general nanomachining technology for the future.展开更多
Lithography is a pivotal micro/nanomanufacturing technique,facilitating performance enhancements in an extensive array of devices,encompassing sensors,transistors,and photovoltaic devices.The key to creating highly pr...Lithography is a pivotal micro/nanomanufacturing technique,facilitating performance enhancements in an extensive array of devices,encompassing sensors,transistors,and photovoltaic devices.The key to creating highly precise,multiscale-distributed patterned structures is the precise control of the lithography process.Herein,high-quality patterned ZnO nanostructures are constructed by systematically tuning the exposure and development times during lithography.By optimizing these parameters,ZnO nanorod arrays with line/hole arrangements are successfully prepared.Patterned ZnO nanostructures with highly controllable morphology and structure possess discrete three-dimensional space structure,enlarged surface area,and improved light capture ability,which achieve highly efficient energy conversion in perovskite solar cells.The lithography process management for these patterned ZnO nanostructures provides important guidance for the design and construction of complex nanostructures and devices with excellent performance.展开更多
Reducing the process variation is a significant concern for resistive random access memory(RRAM).Due to its ultrahigh integration density,RRAM arrays are prone to lithographic variation during the lithography process,...Reducing the process variation is a significant concern for resistive random access memory(RRAM).Due to its ultrahigh integration density,RRAM arrays are prone to lithographic variation during the lithography process,introducing electrical variation among different RRAM devices.In this work,an optical physical verification methodology for the RRAM array is developed,and the effects of different layout parameters on important electrical characteristics are systematically investigated.The results indicate that the RRAM devices can be categorized into three clusters according to their locations and lithography environments.The read resistance is more sensitive to the locations in the array(~30%)than SET/RESET voltage(<10%).The increase in the RRAM device length and the application of the optical proximity correction technique can help to reduce the variation to less than 10%,whereas it reduces RRAM read resistance by 4×,resulting in a higher power and area consumption.As such,we provide design guidelines to minimize the electrical variation of RRAM arrays due to the lithography process.展开更多
基金financially supported by National Natural Science Foundation of China (No. 62274181,62204257 and 62374016)Chinese Ministry of Science and Technology (No. 2019YFB2205005)+4 种基金Guangdong Province Research and Development Program in Key Fields (No. 2021B0101280002)the support from Youth Innovation Promotion Association Chinese Academy of Sciences (No. 2021115)Beijing Institute of ElectronicsBeijing Association for Science and Technology as well,the support from University of Chinese Academy of Sciences (No. 118900M032)China Fundamental Research Funds for the Central Universities (No. E2ET3801)
文摘Extreme ultraviolet(EUV)lithography with high numerical aperture(NA)is a future technology to manufacture the integrated circuit in sub-nanometer dimension.Meanwhile,source mask co-optimization(SMO)is an extensively used approach for advanced lithography process beyond 28 nm technology node.This work proposes a novel SMO method to improve the image fidelity of high-NA EUV lithography system.A fast high-NA EUV lithography imaging model is established first,which includes the effects of mask three-dimensional structure and anamorphic magnification.Then,this paper develops an efficient SMO method that combines the gradient-based mask optimization algorithm and the compressivesensing-based source optimization algorithm.A mask rule check(MRC)process is further proposed to simplify the optimized mask pattern.Results illustrate that the proposed SMO method can significantly reduce the lithography patterning error,and maintain high computational efficiency.
基金supported by National Natural Science Foundation of China(Nos.12172356,U23B20110)the Interdisciplinary and Collaborative Teams of CAS。
文摘Particle-In-Cell(PIC)simulations were performed in this work to study the dynamics of the EUVinduced hydrogen plasma.The Monte-Carlo Collision(MCC)model was employed to deal with the collisions between charged particles and background gas molecules.The dynamic evolution of the plasma sheath,as well as the flux and energy distribution of ions impacting on the mirror surface,was discussed.It was found that the emission of secondary electrons under the EUV irradiation on the ruthenium mirror coating creates a positively charged wall and then prevents the ions from impacting on the mirror and therefore changes the flux and energy distribution of ions reaching the mirror.Furthermore,gas pressure has a notable effect on the plasma sheath and the characteristics of the ions impinging on the mirrors.With greater gas pressure,the sheath potential decreases more rapidly.The flux of ions received by the mirror grows approximately linearly and at the same time the energy corresponding to the peak flux decreases slightly.However,the EUV source intensity barely changes the sheath potential,and its influence on the ion impact is mainly limited to the approximate linear increase in ion flux.
基金supported by the National Natural Science Foundation of China(Grant Nos.12075191,12388101,and 12241201)the Fundamental Research Funds for the Central Universities(Grant No.D5000230120)the Natural Science Basic Research Program of Shaanxi Province(Grant No.2023-JC-YB-541).
文摘The development of nanoelectronics and nanotechnologies has been boosted significantly by the emergence of 2D materials because of their atomic thickness and peculiar properties,and developing a universal,precise patterning technology for single-layer 2D materials is critical for assembling nanodevices.Demonstrated here is a nanomachining technique using electrical breakdown by an AFM tip to fabricate nanopores,nanostrips,and other nanostructures on demand.This can be achieved by voltage scanning or applying a constant voltage while moving the tip.By measuring the electrical current,the formation process on single-layer materials was shown quantitatively.The present results provide evidence of successful pattern fabrication on single-layer MoS2,boron nitride,and graphene,although further confirmation is still needed.The proposed method holds promise as a general nanomachining technology for the future.
基金financially supported by the National Key Research and Development Program of China(No.2018YFA0703500)the National Natural Science Foundation of China(Nos.52232006,52188101,52102153,52072029,51991340,and 51991342)+3 种基金the Overseas Expertise Introduction Projects for Discipline Innovation,China(No.B14003)the Fundamental Research Funds for the Central Universities,China(Nos.FRF-TP-18-001C1 and 06500160)the Interdisciplinary Research Project for Young Teachers of USTB(Fundamental Research Funds for the Central Universities)(Nos.FRF-IDRY-21-019 and FRFIDRY-21-014)the State Key Lab for Advanced Metals a nd Materials,China(No.2023-Z01)。
文摘Lithography is a pivotal micro/nanomanufacturing technique,facilitating performance enhancements in an extensive array of devices,encompassing sensors,transistors,and photovoltaic devices.The key to creating highly precise,multiscale-distributed patterned structures is the precise control of the lithography process.Herein,high-quality patterned ZnO nanostructures are constructed by systematically tuning the exposure and development times during lithography.By optimizing these parameters,ZnO nanorod arrays with line/hole arrangements are successfully prepared.Patterned ZnO nanostructures with highly controllable morphology and structure possess discrete three-dimensional space structure,enlarged surface area,and improved light capture ability,which achieve highly efficient energy conversion in perovskite solar cells.The lithography process management for these patterned ZnO nanostructures provides important guidance for the design and construction of complex nanostructures and devices with excellent performance.
基金supported in part by the Open Fund of State Key Laboratory of Integrated Chips and Systems,Fudan Universityin part by the National Science Foundation of China under Grant No.62304133 and No.62350610271.
文摘Reducing the process variation is a significant concern for resistive random access memory(RRAM).Due to its ultrahigh integration density,RRAM arrays are prone to lithographic variation during the lithography process,introducing electrical variation among different RRAM devices.In this work,an optical physical verification methodology for the RRAM array is developed,and the effects of different layout parameters on important electrical characteristics are systematically investigated.The results indicate that the RRAM devices can be categorized into three clusters according to their locations and lithography environments.The read resistance is more sensitive to the locations in the array(~30%)than SET/RESET voltage(<10%).The increase in the RRAM device length and the application of the optical proximity correction technique can help to reduce the variation to less than 10%,whereas it reduces RRAM read resistance by 4×,resulting in a higher power and area consumption.As such,we provide design guidelines to minimize the electrical variation of RRAM arrays due to the lithography process.
