To tackle the demoulding and conglutinating problem with the resist and hard mold in the nanoimprint lithography process, a soft mould can be used to demould and reduce the macro or mi- cro mismatch between mould bott...To tackle the demoulding and conglutinating problem with the resist and hard mold in the nanoimprint lithography process, a soft mould can be used to demould and reduce the macro or mi- cro mismatch between mould bottom surface and wafer top surface. In nanoimprint lithography process, a mathematical equation is formulated to demonstrate the relation between the residual re- sist thickness and the pressing force during pressing the mould toward the resist-coated wafer. Based on these analytical studies, a new imprint process, which includes a pre-cure release of the pressing force, was proposed for the high-conformity transfer of nano-patterns from the mould to the wafer. The results of a series of imprint experiments showed that the proposed loading process could meet the requirements for the imprint of different patterns and feature sizes while maintaining a uniform residual resist and non-distorted transfer of nano-patterns from the mould to the resist- coated wafer.展开更多
基金Supported by National Natural Science Foundation of China (No. E05020203) , "863" National Hi-Tech Program(No.2002AA420050) and "973" National Key Basic Research Program ( No. 2003CB716202).
文摘To tackle the demoulding and conglutinating problem with the resist and hard mold in the nanoimprint lithography process, a soft mould can be used to demould and reduce the macro or mi- cro mismatch between mould bottom surface and wafer top surface. In nanoimprint lithography process, a mathematical equation is formulated to demonstrate the relation between the residual re- sist thickness and the pressing force during pressing the mould toward the resist-coated wafer. Based on these analytical studies, a new imprint process, which includes a pre-cure release of the pressing force, was proposed for the high-conformity transfer of nano-patterns from the mould to the wafer. The results of a series of imprint experiments showed that the proposed loading process could meet the requirements for the imprint of different patterns and feature sizes while maintaining a uniform residual resist and non-distorted transfer of nano-patterns from the mould to the resist- coated wafer.
