Characterization of power transistors is an indispensable step in the design of radio frequency and mi- crowave power amplifiers. A full harmonic load-pull measurement setup is normally required for the accurate and c...Characterization of power transistors is an indispensable step in the design of radio frequency and mi- crowave power amplifiers. A full harmonic load-pull measurement setup is normally required for the accurate and comprehensive characterization of RF power transistors. The setup is usually highly complex, leading to a rela- tively high hardware cost and low measurement throughput. This paper presents X-parameter measurement on a gallium nitride （GaN） high-electron-mobility transistor and studies the potential of utilizing an X-parameter-based modeling technique to highly reduce the complexity of the harmonic load-pull measurement setup for transistor characterization. During the X-parameter measurement and characterization, load impedance of the device is tuned and controlled only at the fundamental frequency and is left uncontrolled at other higher harmonics. However, it proves preliminarily that the extracted X-parameters can still predict the behavior of the device with moderate to high accuracy, when the load impedance is tuned up to the third-order harmonic frequency. It means that a fundamental-only load-pull test setup is already enough even though the device is to be characterized under load tuning up to the third-order harmonic frequency, by utilizing X-parameters.展开更多
This paper investigates load-pull measurement of AlGaN/GaN high electron mobility transistors（HEMTs） at different numbers of gate fingers.Scalable small-signal models are extracted to analyze the relationship betwee...This paper investigates load-pull measurement of AlGaN/GaN high electron mobility transistors（HEMTs） at different numbers of gate fingers.Scalable small-signal models are extracted to analyze the relationship between each model＇s parameters and the number of device＇s gate fingers.The simulated S-parameters from the small-signal models are compared with the reflection coefficients measured from the load-pull measurement system at X-band frequencies of 8.8 and 10.4 GHz.The dependency between the number of device＇s gate fingers and load-pull characterization is presented.展开更多
文摘Characterization of power transistors is an indispensable step in the design of radio frequency and mi- crowave power amplifiers. A full harmonic load-pull measurement setup is normally required for the accurate and comprehensive characterization of RF power transistors. The setup is usually highly complex, leading to a rela- tively high hardware cost and low measurement throughput. This paper presents X-parameter measurement on a gallium nitride （GaN） high-electron-mobility transistor and studies the potential of utilizing an X-parameter-based modeling technique to highly reduce the complexity of the harmonic load-pull measurement setup for transistor characterization. During the X-parameter measurement and characterization, load impedance of the device is tuned and controlled only at the fundamental frequency and is left uncontrolled at other higher harmonics. However, it proves preliminarily that the extracted X-parameters can still predict the behavior of the device with moderate to high accuracy, when the load impedance is tuned up to the third-order harmonic frequency. It means that a fundamental-only load-pull test setup is already enough even though the device is to be characterized under load tuning up to the third-order harmonic frequency, by utilizing X-parameters.
基金supported by the National Natural Science Foundation of China(No.61204086)
文摘This paper investigates load-pull measurement of AlGaN/GaN high electron mobility transistors（HEMTs） at different numbers of gate fingers.Scalable small-signal models are extracted to analyze the relationship between each model＇s parameters and the number of device＇s gate fingers.The simulated S-parameters from the small-signal models are compared with the reflection coefficients measured from the load-pull measurement system at X-band frequencies of 8.8 and 10.4 GHz.The dependency between the number of device＇s gate fingers and load-pull characterization is presented.
