We present a study on the single event transient （SET） induced by a pulsed laser in different silicon-germanium （SiGe） heterojunction bipolar transistors （HBTs） with the structure of local oxidation of silicon ...We present a study on the single event transient （SET） induced by a pulsed laser in different silicon-germanium （SiGe） heterojunction bipolar transistors （HBTs） with the structure of local oxidation of silicon （LOCOS） and deep trench isolation （DTI）. The experimental results are discussed in detail and it is demonstrated that a SiGe HBT with the structure of LOCOS is more sensitive than the DTI SiGe HBT in the SET. Because of the limitation of the DTI structure, the charge collection of diffusion in the DTI SiGe HBT is less than that of the LOCOS SiGe HBT. The SET sensitive area of the LOCOS SiGe HBT is located in the eollector-substrate （C/S） junction, while the sensitive area of the DTI SiGe HBT is located near to the collector electrodes.展开更多
The smoothing thin plate spline （STPS） interpolation using the penalty function method according to the optimization theory is presented to deal with transient heat conduction problems. The smooth conditions of the ...The smoothing thin plate spline （STPS） interpolation using the penalty function method according to the optimization theory is presented to deal with transient heat conduction problems. The smooth conditions of the shape functions and derivatives can be satisfied so that the distortions hardly occur. Local weak forms are developed using the weighted residual method locally from the partial differential equations of the transient heat conduction. Here the Heaviside step function is used as the test function in each sub-domain to avoid the need for a domain integral. Essential boundary conditions can be implemented like the finite element method （FEM） as the shape functions possess the Kronecker delta property. The traditional two-point difference method is selected for the time discretization scheme. Three selected numerical examples are presented in this paper to demonstrate the availability and accuracy of the present approach comparing with the traditional thin plate spline （TPS） radial basis functions.展开更多
采用局部均值分解(Local Mean Decomposition,LMD)方法来识别机械系统固有频率和阻尼比。局部均值分解(LMD)方法可以自适应地将一个复杂信号分解为若干个具有一定物理意义的PF(Production Function)分量之和,采用LMD方法对脉冲激励下机...采用局部均值分解(Local Mean Decomposition,LMD)方法来识别机械系统固有频率和阻尼比。局部均值分解(LMD)方法可以自适应地将一个复杂信号分解为若干个具有一定物理意义的PF(Production Function)分量之和,采用LMD方法对脉冲激励下机械系统的加速度响应信号进行分解,得到一列具有物理意义的PF分量,每一个PF分量可以对应于某一个模态下的振动响应,进而就可以通过拟合瞬时频率和瞬时幅值曲线识别模态固有频率和阻尼比。先采用仿真信号进行了分析,使用LMD方法和经验模态分解方法(Empirical Mode Decomposition,EMD)对梁的瞬态响应实验数据进行模态识别并同仿真结果进行对比研究,结果表明用LMD进行模态分析具有较好的效果。展开更多
基金Supported by the National Natural Science Foundation of China under Grant Nos 61274106
文摘We present a study on the single event transient （SET） induced by a pulsed laser in different silicon-germanium （SiGe） heterojunction bipolar transistors （HBTs） with the structure of local oxidation of silicon （LOCOS） and deep trench isolation （DTI）. The experimental results are discussed in detail and it is demonstrated that a SiGe HBT with the structure of LOCOS is more sensitive than the DTI SiGe HBT in the SET. Because of the limitation of the DTI structure, the charge collection of diffusion in the DTI SiGe HBT is less than that of the LOCOS SiGe HBT. The SET sensitive area of the LOCOS SiGe HBT is located in the eollector-substrate （C/S） junction, while the sensitive area of the DTI SiGe HBT is located near to the collector electrodes.
基金supported by the Key Program of the National Natural Science Foundation of China (Grand No. 51138001)the China-German Cooperation Project (Grand No. GZ566)+1 种基金the Innovative Research Groups Funded by the National Natural Science Foundation of China (Grand No. 51121005)the Special Funds for the Basic Scientific Research Expenses for the Central University (Grant No. DUT13LK16)
文摘The smoothing thin plate spline （STPS） interpolation using the penalty function method according to the optimization theory is presented to deal with transient heat conduction problems. The smooth conditions of the shape functions and derivatives can be satisfied so that the distortions hardly occur. Local weak forms are developed using the weighted residual method locally from the partial differential equations of the transient heat conduction. Here the Heaviside step function is used as the test function in each sub-domain to avoid the need for a domain integral. Essential boundary conditions can be implemented like the finite element method （FEM） as the shape functions possess the Kronecker delta property. The traditional two-point difference method is selected for the time discretization scheme. Three selected numerical examples are presented in this paper to demonstrate the availability and accuracy of the present approach comparing with the traditional thin plate spline （TPS） radial basis functions.
