Effect of surface modification on the radiation stability of diamond ohmic contacts

The ohmic contact interface between diamond and metal is essential for the application of diamond detectors.Surface modification can significantly affect the contact performance and eliminate the interface polarization effect.However,the radiation stability of a diamond detector is also sensitive to surface modification.In this work,the influence of surface modification technology on a diamond ohmic contact under high-energy radiation was investigated.Before radiation,the specific contact resistivities(ρc)between Ti/Pt/Au-hydrogen-terminated diamond(H-diamond)and Ti/Pt/Au-oxygenterminated diamond(O-diamond)were 2.0×10^(-4)W·cm^(2) and 4.3×10^(-3)Wcm^(2),respectively.After 10 MeV electron radiation,the ρc of Ti/Pt/Au H-diamond and Ti/Pt/Au O-diamond were 5.3×10^(-3)W·cm^(2)and 9.1×10^(-3)W·cm^(2),respectively.The rates of change of ρc of H-diamond and O-diamond after radiation were 2550%and 112%,respectively.The electron radiation promotes bond reconstruction of the diamond surface,resulting in an increase in ρc.

Analytical modeling and approaches of multihelix cables incorporating with interwire mutual contacts

This study aims to develop an analytical model based on the curve beam theory to capture the mechanical response of a multihelix cable considering the internal contact displacements.Accordingly,a double-helix cable subjected to axial tension and torsion is analyzed,and both the line and point contacts between the neighboring wires and strands are considered via an equivalent homogenized approach.Then,the proposed theoretical model is extended to a hierarchical multihelix cable with mutual contact displacements by constructing a recursive relationship between the high-and low-level multihelix structures.The global tensile stiffness and torsional stiffness of the double-helix cable are successfully evaluated.The results are validated by a finite element(FE)model,and are found to be consistent with the findings of previous studies.It is shown that the contact deformations in multihelix cables significantly affect their equivalent mechanical stiffness,and the contact displacements are remarkably enhanced as the helix angles increase.This study provides insights into the interwire/interstrand mutual contact effects on global and local responses.

Fluid property identification of the Lower Cretaceous reservoirs with complex oil-water contacts in Deseo Basin,Chad

Recently,exploration breakthroughs have been made in the Lower Cretaceous sandstone reservoirs in the Doseo Basin,but the identification of reservoir fluid property is difficult due to variable reservoir lithology,complex oil-water contact within and faint responses of the oil zone,which causes the lower accuracy of reservoir fluid property identification with conventional mudlogging and wirelogging techniques.Applying the geochemical logging,fluorescent logging,mud logging and cutting logging technology,in combination with formation test data,this paper distinguishes the crude oil types,analyzes the logging response characteristics of oil zone after water washing,and establishes the interpretation charts and parameter standards for reservoir fluid properties.The crude oil can be divided into two types,namely viscous-heavy and thin-light,based on total hydrocarbon content and component concentration tested by mud logging,features of pyrolysis gas chromatogram and fluorescence spectroscopy.The general characteristics of oil layers experienced water washing include the decrease of total hydrocarbon content and component concentration from mud logging,the decrease of S1 and PS values from geochemical logging,the decrease of hydrocarbon abundance and absence of some light components in pyrolysis gas chromatogram,and the decrease of fluorescence area and intensity from fluorescence logging.According to crude oil types,the cross plots of S1 versus peak-baseline ratio,and the cross plots of rock wettability versus fluorescence area ratio are drawn and used to interpret reservoir fluid property.Meanwhile,the standards of reservoir fluid parameter are established combining with the parameters of PS and the parameters in above charts,and comprehensive multiparameter correlation in both vertical and horizontal ways is also performed to interpret reservoir fluid property.The application in the Doseo Basin achieved great success,improving interpretation ability of fluid property in the reservoir with complex oil-water contact,and also provided technical reference for the efficient exploration and development of similar reservoirs.

Physical mechanism of oxygen diffusion in the formation of Ga_(2)O_(3) Ohmic contacts

The formation of low-resistance Ohmic contacts in Ga_(2)O_(3) is crucial for high-performance electronic devices. Conventionally, a titanium/gold(Ti/Au) electrode is rapidly annealed to achieve Ohmic contacts, resulting in mutual diffusion of atoms at the interface. However, the specific role of diffusing elements in Ohmic contact formation remains unclear.In this work, we investigate the contribution of oxygen atom diffusion to the formation of Ohmic contacts in Ga_(2)O_(3). We prepare a Ti/Au electrode on a single crystal substrate and conduct a series of electrical and structural characterizations.Using density functional theory, we construct a model of the interface and calculate the charge density, partial density of states, planar electrostatic potential energy, and I–V characteristics. Our results demonstrate that the oxygen atom diffusion effectively reduces the interface barrier, leading to low-resistance Ohmic contacts in Ga_(2)O_(3). These findings provide valuable insights into the underlying mechanisms of Ohmic contact formation and highlight the importance of considering the oxygen atom diffusion in the design of Ga_(2)O_(3)-based electronic devices.

Effect of the annealing temperature on the long-term thermal stability of Pt/Si/Ta/Ti/4H–SiC contacts

The Pt/Si/Ta/Ti multilayer metal contacts on 4H-Si C are annealed in Ar atmosphere at 600°C-1100°C by a rapid thermal processor（RTP）. The long-term thermal stability is evaluated by aging the annealed contact at 600°C in air. The contact＇s properties are determined by current-voltage measurement, and the specific contact resistance is calculated based on the transmission line model（TLM）. Transmission electron microscope（TEM） and energy-dispersive x-ray spectrometry（EDX） are used to characterize the interface morphology, thickness, and composition. The results reveal that a higher annealing temperature is favorable for the formation of an Ohmic contact with a lower specific contact resistance, and causes the rapid degradation of the Ohmic contact in the aging process.

Study on the Effect of Behavioral Interventions Based on the Theory of“Knowledge,Attitude,Practice”on Tuberculosis Cognitive Level of Close Contacts

Objective:Based on the theory of“Knowledge,Attitude,Practice,”health education was carried out for close contact with tuberculosis(TB)at a university in Beijing,and its impact on the students’awareness of TB was studied.This study could provide a reference for effective health education interventions among close contacts of TB in undergraduates.Methods:102 undergraduates who had close contact with one confirmed case of pulmonary TB in April 2021 at a university were randomly divided into a control group and an intervention group.The intervention group was given the“Knowledge,Attitude,Practice”health education intervention by professionally trained doctors,and were asked to complete a self-designed TB-related questionnaire before and after the intervention.Both groups performed the Tuberculin Skin Test(TST)and chest X-ray(CR)examination.Results:The rate of the TST test was 18.6%,and CR examination showed 0 cases of pulmonary TB.The survey results showed that the TB awareness rate(96.1%,49/51)in the intervention group was significantly higher than that of the control group(51.0%,26/51),and the differences in awareness rate between the two groups were statistically significant(P<0.05).Regarding the attitude/skills toward TB,the prevalence rate of tuberculosis-related attitude/behavior in the intervention group(94.1%,47/51)was significantly higher than that of the control group(60.8%,31/51),and the differences between the two groups were statistically significant(P<0.05).Conclusion:Both self-controlled and parallel-controlled studies showed that the health education intervention of“Knowledge,Attitude,Practice”improved the awareness of TB among close contacts of TB in undergraduates.

Imperative for long-term management and surveillance in Kawasaki disease

Kawasaki disease(KD)is a significant pediatric vasculitis known for its potential to cause severe coronary artery complications.Despite the effectiveness of initial treatments,such as intravenous immunoglobulin,KD patients can experience long-term cardiovascular issues,as evidenced by a recent case report of an adult who suffered a ST-segment elevation myocardial infarction due to previous KD in the World Journal of Clinical Cases.This editorial emphasizes the critical need for long-term management and regular surveillance to prevent such complications.By drawing on recent research and case studies,we advocate for a structured approach to follow-up care that includes routine cardiac evaluations and preventive measures.

Direct Tunneling Effect in Metal-Semiconductor Contacts Simulated with Monte Carlo Method

Considering the tunneling effect and the Schottky effect,the metal semiconductor contact is simulated by using self consistent ensemble Monte Carlo method.Under different biases or at different barrier heights,the investigation into the tunneling current indicates that the tunneling effect is of great importance under reverse biases.The Schottky barrier diode current due to Schottky effect is in agreement with the theoretical one.The barrier lowering is found a profound effect on the current transport at the metal semiconductor interface.

Evidence of the Role of Carbon Vacancies in Nickel-Based Ohmic Contacts to n-Type Silicon Carbide

N-wells are created by P＋ ion implantation into Si-faced p-type 4H-SiC epilayer. Ti and Ni are deposited in sequence on the surface of the active regions. Ni2Si is identified as the dominant phase by X-ray diffraction （XRD） analysis after metallization annealing. An amorphous C film at the Ni2 Si/SiC interface is confirmed by an X-ray energy-dispersive spectrometer （XEDS）. The Ni2Si and amorphous C film are etched away selectively,followed by deposition of new metal films without annealing. Measurement of the current-voltage characteristics shows that the contacts are still ohmic after the Ni2 Si and amorphous C film are replaced by new metal films. The sheet resistance Rsh of the implanted layers decreases from 975 to 438f2/D, because carbon vacancies （Vc） appeared during annealing,which act as donors for electrons in SiC.

Fabrication of n^+ Polysilicon Ohmic Contacts with a Heterojunction Structure to n-Type 4H-Silicon Carbide

Polysilicon ohmic contacts to n-type 4H-SiC have been fabricated. TLM （transfer length method） test patterns with polysilicon structure are formed on n-wells created by phosphorus ion （P^＋） implantation into a Si-faced p-type 4H-SiC epilayer. The polysilicon is deposited using low-pressure chemical vapor deposition （LPCVD） and doped by phosphorous ions implantation followed by diffusion to obtain a sheet resistance of 22Ω/□. The specific contact resistance pc of n^＋ polysilicon contact to n-type 4H-SiC as low as 3.82 × 10^-5Ω· cm^2 is achieved. The result for sheet resistance Rsh of the phosphorous ion implanted layers in SiC is about 4.9kΩ/□. The mechanisms for n^＋ polysilicon ohmic contact to n-type SiC are discussed.

Arc erosion of AgSnO_2 electrical contacts at different stages of a break operation

Arc erosion studies are conducted on AgSnO2 contact materials at different stages in the break operation. A resistive load arrangement is used with up to 42 V DC at 24 A and a constant contact opening velocity. The arc current is terminated at different stages as the arc is drawn between the contacts enabling a study of the arcing phenomena up to that point. Surface profiling of the contacts is conducted to determine the extent of erosion at the different stages as the arc is drawn. Spectral analysis is also conducted on the arc and then related to the extent of erosion. The results show that particular features occur at different stages as the arc is drawn. As the arc is initially established, it goes through an ＂Arc Generation＂ regime where the arc roots are small and immobile on both the anode and the cathode. Material transfer occurs mainly from anode to cathode. The spectral analysis indicates that Sn and O species dominate the arc followed by the Ag species. As the arc is drawn further and enters the ＂Arc Degeneration＂ regime, the anode undergoes significantly larger erosion than the cathode. Also, both contacts indicate that multiple arc roots have formed, which are highly mobile in the later stages of the discharge. The spectral analysis indicates that Ag and N species are in high concentrations compared to other species. The mechanisms of erosion and deposition are discussed in relation to the species within the arc discharge. For the complete break operation, it is found that the anode undergoes major erosion, and it is thought that the gaseous ions species do not dominate the arc under these conditions of short arcs and voltage 〈42 V to cause cathode erosion.

Experiment and finite element method analysis mass erosion and transfer of Ag/La_2NiO_4-based electrical contacts during operation

A uniform transient temperature field model of electrical contacts operation was found by analyzing the process of closing arc constriction resistance Joule heat ~ breaking arc. Essential parameters of Ag/La2NiO4 electrical contact material for transient temperature field calculation were obtained through tests of electrical contact experimental instrument under 18 V DC in different cur- rents, other correlation experiments, and calculation anal- ysis. The finite element method was applied to solve the transient temperature field, and the features and distribution of the transient temperature field were obtained. The condition of material erosion and mass transfer can be forecasted by those calculation results. It is beneficial to research about the lifetime of Ag/La2NiO4 electrical material.

Ti-Al based ohmic contacts to n-type 6H-SiC with ion implantation

The Ti-Al ohmic contact to n-type 6H-SiC has been fabricated. An array of TLM （transfer length method） test patterns with Au/Ti/A1/Ti/SiC structure is formed on N-wells created by P^＋ ion implantation into Si-faced p-type 6H-SiC epilayer. The specific contact resistance pc as low as 8.64×10-6Ω·cm^2 is achieved after annealing in N2 at 900℃ for 5min. The sheet resistance Rsh of the implanted layers is 975Ω. X-ray diffraction （XRD） analysis shows the formation of Ti3SiC2 at the metal/n-SiC interface after thermal annealing, which is responsible for the low resistance contact.

Friction Characteristics of Nanoscale Sliding Contacts between Multi-Asperity Tips and Textured Surfaces

Nanoscale sliding contacts of smooth surfaces or between a single asperity and a smooth surface have been widely investigated by molecular dynamics simulations, while there are few studies on the sliding contacts between two rough surfaces. Actually, the friction of two rough surfaces considering interactions between more asperities should be more realistic. By using multiscale method, friction characteristics of two dimensional nanoscale sliding contacts between rigid multi-asperity tips and elastic textured surfaces are investigated. Four nanoscale textured surfaces with different texture shapes are designed, and six multi-asperity tips composed of cylindrical asperities with different radii are used to slide on the textured surfaces. Friction forces are compared for different tips, and effects of the asperity radii on the friction characteristics are investigated. Average friction forces for all the cases are listed and compared, and effects of texture shapes of the textured surfaces are discussed. The results show that textured surface II has a better structure to reduce friction forces. The multi-asperity tips composed of asperities with R=20r0 （r0=0.227 7 nm） or R=30r0 get higher friction forces compared with other cases, and more atoms of the textured surfaces are taken away by these two tips, which are harmful to reduce friction or wear. For the case of R=10ro, friction forces are also high due to large contact areas, but the sliding processes are stable and few atoms are taken away by the tip. The proposed research considers interactions between more asperities to make the model approach to the real sliding contact problems. The results will help to vary or even control friction characteristics by textured surfaces, or provide references to the design of textured surfaces.

Adaptive Multiscale Method for Two-dimensional Nanoscale Adhesive Contacts

There are two separate traditional approaches to model contact problems: continuum and atomistic theory. Continuum theory is successfully used in many domains, but when the scale of the model comes to nanometer, continuum approximation meets challenges. Atomistic theory can catch the detailed behaviors of an individual atom by using molecular dynamics (MD) or quantum mechanics, although accurately, it is usually time-consuming. A multiscale method coupled MD and finite element (FE) is presented. To mesh the FE region automatically, an adaptive method based on the strain energy gradient is introduced to the multiscale method to constitute an adaptive multiscale method. Utilizing the proposed method, adhesive contacts between a rigid cylinder and an elastic substrate are studied, and the results are compared with full MD simulations. The process of FE meshes refinement shows that adaptive multiscale method can make FE mesh generation more flexible. Comparison of the displacements of boundary atoms in the overlap region with the results from full MD simulations indicates that adaptive multiscale method can transfer displacements effectively. Displacements of atoms and FE nodes on the center line of the multiscale model agree well with that of atoms in full MD simulations, which shows the continuity in the overlap region. Furthermore, the Von Mises stress contours and contact force distributions in the contact region are almost same as full MD simulations. The method presented combines multiscale method and adaptive technique, and can provide a more effective way to multiscale method and to the investigation on nanoscale contact problems.

Ohmic Contacts to n-Type Al_(0.6)Ga_(0.4)N for Solar-Blind Detectors

We investigate the contact characteristics of bi-layer thin films, Ti（20nm）/Al（200nm） on Si-doped n-type A10.6 Ga0.4 N films grown on sapphire substrate. The surface treatment was aqua regia boiling before metallization and annealing after metallization at different conditions in N2 ambient. High resolution X-ray diffractometery analysis was carried out on the contacts and the surface interfaces of these conditions were compared. A specific contact resistivity pc was determined using the circular transmission line method via current-voltage measurements. A pc of 3.42 × 10^-4 Ω·cm^2 was achieved when annealed at 670℃ for 90s. Then, this ideal ohmic contact was used in back-illuminated solar-blind AlGaN p- i-n detectors and the detectors＇ performances, such as spectral responsivity, dark-current,and breakdown voltage were optimized.

Ni/Pd-based ohmic contacts to p-GaN through p-InGaN/p^(+)-GaN contacting layers

Specific contact resistance to p-GaN was measured for various structures of Ni/Pd-based metals and thin(20-30 nm thick)p-InGaN/p^(+)-GaN contacting layers.The effects of surface chemical treatment and annealing temperature were ex-amined.The optimal annealing temperature was determined to be 550°C,above which the sheet resistance of the samples de-graded considerably,suggesting that undesirable alloying had occurred.Pd-containing metal showed~35%lower com-pared to that of single Ni.Very thin(2-3.5 nm thick)p-InGaN contacting layers grown on 20-25 nm thick p^(+)-GaN layers exhib-ited one to two orders of magnitude smaller values of compared to that of p^(+)-GaN without p-InGaN.The current density de-pendence of,which is indicative of nonlinearity in current-voltage relation,was also examined.The lowest achieved through this study was 4.9×10^(-5)Ω·cm^(2)@J=3.4 kA/cm^(2).

Sedimentation of short cylindrical pollutants with mechanical contacts

Lattice Boltzmann method and elastic particle collision model were used to investigate the sedimentation of short cylindrical pollutant particles with mechanical contacts for varying bulk number density ε and terminal Reynolds number ReT. The corresponding experiments were performed as a comparison. The clusters of pollutant particles with an inverted “T” structure were observed, the pollutant particles for high ε and large ReT scattered wider than that for low ε and small ReT. The sedimentation velocities increased suddenly at the initial stage, then decreased drastically, after that swayed around and approached to a steady value. The time to steady state did not depend on ε and ReT. The effect of particle interactions was to hinder the average sedimentation velocity, and hindrance was directly proportional to ε. The orientation distributions of pollutant particles depended on ReT and ε, especially on the former. Both the standard deviations of vertical and horizontal velocity, the former was larger than the latter, were nearly independent on ε and ReT.

Annealing temperature influence on the degree of inhomogeneity of the Schottky barrier in Ti/4H–SiC contacts

Tung＇s model was used to analyze anomalies observed in Ti/Si C Schottky contacts. The degree of the inhomogeneous Schottky barrier after annealing at different temperatures is characterized by the ‘T0anomaly＇ and the difference（△Φ）between the uniformly high barrier height（Φ0B） and the effective barrier height（Φeff B）. Those two parameters of Ti Schottky contacts on 4H–Si C were deduced from I–V measurements in the temperature range of 298 K–503 K. The increase in Schottky barrier（SB） height（ΦB） and decrease in the ideality factor（n） with an increase measurement temperature indicate the presence of an inhomogeneous SB. The degree of inhomogeneity of the Schottky barrier depends on the annealing temperature, and it is at its lowest for 500-°C thermal treatment. The degree of inhomogeneity of the SB could reveal effects of thermal treatments on Schottky contacts in other aspects.

Formation Process of Intermittent Molten Bridge Between Au-Plated Contacts at Super Low Breaking Velocity

This paper presents the molten bridge behaviors of Au-plated material at super low breaking velocity conditions by introducing our new designed test rig. The typical waveforms of the contact voltage and contact force during breaking are investigated under the load of 5- 25 V/0.2-1 A and velocity of 25-150 nm/s. It is shown that the intermittent molten bridge is formed from the competition of multitude contact a-spots for current distribution and the solid- liquid mixing characteristics of a molten bridge. Also, it is proved that the bridge is not composed by the completed melted metal by using FEM thermal simulation and the voltage-temperature relation. The observed surface morphology reveals that the scattered and stacked melted regions are attributed to the intermittent bridge. Finally, the effects of breaking velocity and electrical load on bridge length and duration are also analyzed.