Design and Test of a CMOS Low Noise Amplifier in Bluetooth Transceiver

A RF low noise amplifier,integrated in a single bluetooth transceiver chip and fabricated in 0.35μm digital CMOS technology,is presented.Under the consideration of ESD protection and package,design methodology is discussed from the aspects of noise optimization,impedance match,and forward gain.At 2.05GHz,the measured S 11 is -6.4dB, S 21 is 11dB with 3dB-BW of 300MHz,and NF is about 5.3dB.It indicates that comprehensive consideration of parasitics,package model,and reasonable process is necessary for RF circuit design.

OPTIMIZATION DESIGN METHOD FOR INPUT IMPEDANCE MATCHING NETWORK OF LOW NOISE AMPLIFIER

According to the theories of optimal noise match and optimal power match, a method for calculating the optimal source impedance of low noise amplifier （LNA） is proposed based on the input reflection coefficient S11. Moreover.with the help of Smith chart, the calculation process is detailed, and the trade-off between the lowest noise figure and the maximum power gain is obtained during the design of LNA input impedance matching network. Based on the Chart 0. 35-μm CMOS process, a traditional cascode LNA circuit is designed and manufactured. Simulation and experimental results have a good agreement with the theoretical analysis, thus proving the correctness of theoretical analysis and the feasibility of the method.

Design of Low-Voltage Low Noise Amplifiers with High Linearity

A CMOS radio frequency low noise amplifier with high linearity and low operation voltage of less than 1.0V is presented.In this circuit,an auxiliary MOSFET in the triode region is used to boost the linearity.Simulation shows that this method can boost the input-referred 3rd-order intercept point with much less power dissipation than that of traditional power/linearity tradeoff solution which pays at least 1dB power for 1dB linearity improvement.It is also shown that the size of the common-gate PMOS transistor needs to be optimized to reduce its loaded input impedance so as not to degrade the linearity due to high voltage gain at its source terminal.The simulation is carried out with TSMC 0.18μm RF CMOS technology and SpectreRF.

Design and analysis on four stage SiGe HBT low noise amplifier

Focusing on the linearity shortcoming on a bipolar low noise amplifier(LNA),a new 6 ~14GHz four stage SiGe HBT LNA is proposed.This amplifier adopts a method of gain allocation on multiple stages to avoid the limitation on linearity especially with the addition of negative gain on the third stage.To realize gain flatness,extra zero is introduced to compensate the gain roll-off formed by pole,and local shunt-shunt negative feedback is used to widen the bandwidth as well as optimize circuit' s noise.Simulated results have shown that in 6 ~14GHz,this circuit achieves noise figure(NF) less than 3dB,gain of 17.8dB(+0.2dB),input and output reflection parameters of less than- 10 dB,and the K factor is above 1.15.

A 400 MHz Low Noise Amplifier at Cryogenic Temperature for Superconductor Filter System

A cryogenic low noise amplifier （LNA） using Agilent high electron mobility transistor （HEMT） for 380 MHzto 480 MHz is designed and fabricated, and the excellent cryogenic performance in superconducting receiver front-end for communication system is achieved. A special input impedance matching topology is implemented to provide low noise figure （NF） and good input matching in this cryogenic LNA design. The measurement results show that the NF is within 0.25 dB from the minimum NF of a single transistor, the power gain is above 20 dB, the flatness is within 1 dB, and the maximum input return loss is lower than -20 dB in bandwidth.

Analysis, Design and Implementation of SiGe Wideband Dual-Feedback Low Noise Amplifier

A wideband dual-feedback low noise amplifier （LNA） was analyzed, designed and implemented using SiGe heterojunction bipolar transistor （HBT） technology. The design analysis in terms of gain, input and output matching, noise and poles for the amplifier was presented in detail. The area of the complete chip die, including bonding pads and seal ring, was 655 μm × 495 μm. The on-wafer measurements on the fabricated wideband LNA sample demonstrated good performance： a small-signal power gain of 33 dB with 3-dB bandwidth at 3.3 GHz was achieved; the input and output return losses were better than - 10 dB from 100 MHz to 4 GHz and to 6 GHz, respectively; the noise figure was lower than 4.25 dB from 100 MHz to 6 GHz; with a 5 V supply, the values of OPtdB and OIP3 were 1.7 dBm and 11 dBm at 3-dB bandwidth, respectively.

Radio Frequency Low Noise Amplifier with Linearizing Bias Circuit

A 1.34 GHz-1=60 MHz low noise amplifier （LNA） designed in a 0.35 pm SiGe process is presented. The designed LNA exhibits a power gain of 21.46 dB and a noise figure （NF） of 1.27 dB at 1.34 GHz. The linearity is improved with an active biasing technique. The post-layout simulation shows an input referred 1-dB compression point （IPldn） of-11.52 dBm. Compared with the recent reported high gain LNAs, the proposed LNA has a much better linearity without degrading other performance. The LNA draws 10 mA current from a 3.3 V power supply.

Design of 5GHz low noise amplifier with HBM SiGe 0. 13μm BiCMOS process

A fully integrated low noise amplifier( LNA) for WLAN 802. 11 ac is presented in this article.A cascode topology combining BJT and MOS transistor is used for better performance. An inductive source degeneration is chosen to get 50 Ohm impedance matching at the input. The noise contribution of common gate transistor is analyzed for the first time. The designed LNA is verified with IBM silicon-germanium(SiGe ) 0. 13μm BiCMOS process. The measured results show that the designed LNA has the gain of 13 dB and NF of 2. 8 dB at the center frequency of 5. 5 GHz. The input reflection S11 and output reflection S22 are equal to-19 dB and-11 dB respectively. The P-1 dB and IIP3 are-8. 9 dBm and 6. 6 dBm for the linearity performance respectively. The power consumption is only 1. 3 mW under the 1. 2 V supply. LNA achieves high gain,low noise,and high linearity performance,allowing it to be used for the WLAN 802. 11 ac applications.

A compact and reconfigurable low noise amplifier employing combinational active inductors and composite resistors feedback techniques

A compact and reconfigurable low noise amplifier(LNA)is proposed by combining an input transistor,composite transistors with Darlington configuration as the amplification and output transistor,T-type structure composite resistors instead of a simplex structure resistor,a shunt inductor feedback realized by a tunable active inductor(AI),a shunt inductor peaking technique realized by another tunable AI.The division and collaboration among different resistances in the T-type structure composite resistor realize simultaneously input impedance matching,output impedance matching and good noise performance;the shunt feedback and peaking technique using two tunable AIs not only extend frequency bandwidth and improve gain flatness,but also make the gain and frequency band can be tuned simultaneously by the external bias of tunable AIs;the Darlington configuration of composite transistors provides high gain;furthermore,the adoption of the small size AIs instead of large size passive spiral inductor,and the use of composite resistors make the LNA have a small size.The LNA is fabricated and verified by GaAs/InGaP hetero-junction bipolar transistor(HBT)process.The results show that at the frequency of 7 GHz,the gain S_(21)is maximum and up to 19 dB;the S_(21)can be tuned from 17 dB to 19 dB by tuning external bias of tunable AIs,that is,the tunable amount of S_(21)is 2 dB,and similarly at 8 GHz;the tunable range of 3 dB bandwidth is 1 GHz.In addition,the gain S_(21)flatness is better than 0.4 dB under frequency from 3.1 GHz to 10.6 GHz;the size of the LNA only has 760μm×1260μm(including PADs).Therefore,the proposed strategies in the paper provide a new solution to the design of small size and reconfigurable ultra-wideband(UWB)LNA and can be used further to adjust the variations of gain and bandwidth of radio frequency integrated circuits(RFICs)due to package,parasitic and the variation of fabrication process and temperature.

A wideband CMOS variable gain low noise amplifier

In this paper, a novel structure of linear-in-dB gain control is introduced. Based on this structure, a wideband variable gain low noise amplifier （VGLNA） has been designed and implemented in 0.18μm RF CMOS technology. The measured resuhs show a good linear-in-dB gain control characteristic with 15 dB dynamic range. It can operate in the frequency range of MHz and consumes 30mW from 1.8V power supply. The minimum noise figure is 4.1 dB at the 48 - 860 maximum gain and the input P1dB is greater than - 16.5dBm.

Optimum Design for a Low Noise Amplifier in S-Band

An optimum design of a low noise amplifier （LNA） in S-band working at 2-4 GHz is described. Choosing FHC40LG high electronic mobility transistor （HEMT）, the noise figure of the designed amplifier simulated by Microwave Office is no more than 1.5 dB, meanwhile the gain is no less than 20 dB in the given bandwidth. The simulated results agree with the performance of the transistor itself well in consideration of its own minimum noise figure （0.3 dB） and associated gain （15.5 dB）. Simultaneously, the stability factor of the designed amplifier is no less than 1 in the given bandwidth.

Implementation and noise optimization of a 433 MHz low power CMOS LNA

A low power 433 MHz CMOS （complementary metal- oxide-semiconductor transistor） low noise amplifier（LNA）, used for an ISM （ industrial-scientific-medical ） receiver, is implemented in a 0. 18 μm SMIC mixed-signal and RF （ radio frequency） CMOS process. The optimal noise performance of the CMOS LNA is achieved by adjusting the source degeneration inductance and by inserting an appropriate capacitance in parallel with the input transistor of the LNA. The measured results show that at 431 MHz the LNA has a noise figure of 2.4 dB. The S21 is equal to 16 dB, S11 = -11 dB, S22 = -9 dB, and the inverse isolation is 35 dB. The measured input 1-dB compression point （PtdB） and input third-order intermodulation product （IIP3）are - 13 dBm and -3 dBm, respectively. The chip area is 0. 55 mm × 1.2 mm and the DC power consumption is only 4 mW under a 1.8 V voltage supply.

A Super-Low-Noise,High-Gain MMIC LNA

A two-stage monolithic low noise amplifier is developed for satellite communication applications,using a 0.5μm enhancement PHEMT technology. The on-chip matched amplifier employs lumped elements to reduce the circuit size, and shows a 5012 noise figure less than 0.9dB, gain greater than 26dB, and return loss less than - 10dB in the S-C band range of 3.5 to 4. 3GHz. The noise figure obtained here is the best result ever reported to date of an MMIC LNA with a gain of more than 20dB for the S-C band frequency range. It is attributed to the low noise performance of the enhancement PHEMT transistor and minimized parasitic resistance of the input match network by a common series source inductor and a unique divided resistance at the drain.

CMOS Dual-Band Low Noise Amplifer

A CMOS dual-band low noise amplifer (LNA) design is presented.The purpose of th is work is intended to substitute only one LNA for two individual LNA's in dual -band transceivers for applications such as wireless local area network complying with both IEEE 802.11a and 802.11b/g.Dua l-band simultaneous input power and noise matching and load shaping are discuss ed.The chip is implemented in 0.25μm CMOS mixed and RF process.The measured pe rformance is summarized and discussed.

A Systematical Approach for Noise in CMOS LNA

A systematic approach is used to analyze the noise in CMOS low noise amplifier(LNA),including channel noise and induced gate noise in MOS devices.A new analytical formula for noise figure is proposed.Based on this formula,the impacts of distributed gate resistance and intrinsic channel resistance on noise performance are discussed.Two kinds of noise optimization approaches are performed and applied to the design of a 5 2GHz CMOS LNA.

High performance differential CMOS LNA design for low-IF GPS receiver

A 1.575 GHz CMOS （complementary metal-oxidesemiconductor transistor） low noise amplifier（LNA） suitable for a low intermediate frequency（IF） global positioning system（GPS） receiver is presented. Considering parasitic effects resulting from bond pad and input electrostatic discharge （ESD） protection diodes, the optimization of the input matching and noise performance is analyzed, and a narrowband inductor model is applied to the circuit design and optimization. Based on the Volterra series, the nonlinearity of the LNA is analyzed and an equation describing input-referred third-order intercept points （IIP3） which indicate the nonlinearity effects is derived; accordingly, the trade-off between the power consumption and linearity is made. The LNA is designed and simulated with TSMC （Taiwan Semiconductor Manufacturing Company） 0. 18 μm radio frequency （RF）technology. Simulation results show that the LNA has a noise figure of only 1.1 dB, - 8. 3 dBm IIP3 with 3 mA current consumption from a 1.8 V voltage supply, and the input impedances match well.

A High Gain, Noise Cancelling 2515-4900 MHz CMOS LNA for China Mobile 5G Communication Application

With the development of the times,people’s requirements for communication technology are becoming higher and higher.4G communication technology has been unable to meet development needs,and 5G communication technology has emerged as the times require.This article proposes the design of a low-noise amplifier(LNA)that will be used in the 5G band of China Mobile Communications.A low noise amplifier for mobile 5G communication is designed based on Taiwan Semiconductor Manufacturing Company(TSMC)0.13μm Radio Frequency(RF)Complementary Metal Oxide Semiconductor(CMOS)process.The LNA employs self-cascode devices in current-reuse configuration to enable lower supply voltage operation without compromising the gain.This design uses an active feedback amplifier to achieve input impedance matching,avoiding the introduction of resistive negative feedback to reduce gain.A common source(CS)amplifier is used as the input of the low noise amplifier.In order to achieve the low power consumption of LNA,current reuse technology is used to reduce power consumption.Noise cancellation techniques are used to eliminate noise.The simulation results in a maximum power gain of 22.783,the reverse isolation(S12)less than-48.092 dB,noise figure(NF)less than 1.878 dB,minimum noise figure(NFmin)=1.203 dB,input return loss(S11)and output return loss(S22)are both less than-14.933 dB in the frequency range of 2515-4900 MHz.The proposed Ultra-wideband(UWB)LNA consumed 1.424 mW without buffer from a 1.2 V power supply.

A NOVEL SIMULTANEOUS NOISE AND INPUT VSWR MATCHING TECHNIQUE FOR BROADBAND LNA

The Simultaneous Noise and Input Voltage Standing Wave Ratio (VSWR) Matching (SNIM) condition for Low Noise Amplifier (LNA), in principle, can only be satisfied at a single fre-quency. In this paper, by analyzing the fundamental limitations of the narrowband SNIM technique for the broadband application, the authors present a broadband SNIM LNA systematic design technique. The designed LNA guided by the proposed methodology achieves 10 dB power gain with a low Noise Figure of 0.53 dB. Meanwhile, it provides wonderful input matching of 27 dB across the fre-quency range of 3～5 GHz. Therefore, broadband SNIM is realized.

Squeezed state generation using cryogenic InP HEMT nonlinearity

This study focuses on generating and manipulating squeezed states with two external oscillators coupled by an InP HEMT operating at cryogenic temperatures.First,the small-signal nonlinear model of the transistor at high frequency at 5 K is analyzed using quantum theory,and the related Lagrangian is theoretically derived.Subsequently,the total quantum Hamiltonian of the system is derived using Legendre transformation.The Hamiltonian of the system includes linear and nonlinear terms by which the effects on the time evolution of the states are studied.The main result shows that the squeezed state can be generated owing to the transistor’s nonlinearity;more importantly,it can be manipulated by some specific terms introduced in the nonlinear Hamiltonian.In fact,the nonlinearity of the transistors induces some effects,such as capacitance,inductance,and second-order transconductance,by which the properties of the external oscillators are changed.These changes may lead to squeezing or manipulating the parameters related to squeezing in the oscillators.In addition,it is theoretically derived that the circuit can generate two-mode squeezing.Finally,second-order correlation(photon counting statistics)is studied,and the results demonstrate that the designed circuit exhibits antibunching,where the quadrature operator shows squeezing behavior.

A full W-band low noise amplifier module for millimeter-wave applications

A full W-band low noise amplifier （LNA） module is designed and fabricated. A broadband transition is introduced in this module. The proposed transition is designed, optimized based on the results from numerical simulations. The results show that 1 dB bandwidth of the transition ranges from 61 to 117 GHz. For the purpose of verification, two transitions in back-to-back connection are measured. The results show that transmission loss is only about 0.9-1.7 dB. This transition is used to interface integrated circuits to waveguide components. The characteristic of the LNA module is measured after assembly. It exhibits a broad bandwidth of 75 to 110 GHz, and has a small signal gain above 21 dB. The noise figure is lower than 5.2 dB throughout the entire W-band （below 3 dB from 89 to 95 GHz） at room temperature. The proposed LNA module exhibits potential for millimeter wave applications due to its high small signal gain, low noise, and low DC power consumption.