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High-Temperature Annealing Induced He Bubble Evolution in Low Energy He Ion Implanted 6H-SiC 被引量:1
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作者 刘玉柱 李炳生 张莉 《Chinese Physics Letters》 SCIE CAS CSCD 2017年第5期40-43,共4页
Bubble evolution in low energy and high dose He-implanted 6H-SiC upon thermal annealing is studied. The (0001)-oriented 6H-SiC wafers are implanted with 15keV helium ions at a dose of 1×10^17 cm^-2 at room temp... Bubble evolution in low energy and high dose He-implanted 6H-SiC upon thermal annealing is studied. The (0001)-oriented 6H-SiC wafers are implanted with 15keV helium ions at a dose of 1×10^17 cm^-2 at room temperature. The samples with post-implantation are annealed at temperatures of 1073, 1173, 1273, and 1473K for 30rain. He bubbles in the wafers are examined via cross-sectional transmission electron microscopy (XTEM) analysis. The results present that nanoscale bubbles are almost homogeneously distributed in the damaged layer of the as-implanted sample, and no significant change is observed in the He-implanted sample after 1073 K annealing. Upon 1193 K annealing, almost full recrystallization of He-implantation-induced amorphization in 6H-SiC is observed. In addition, the diameters of He bubbles increase obviously. With continually increasing temperatures to 1273K and 1473 K, the diameters of He bubbles increase and the number density of lattice defects decreases. The growth of He bubbles after high temperature annealingabides by the Ostwald ripening mechanism. The mean diameter of He bubbles located at depths of 120-135 nm as a function of annealing temperature is fitted in terms of a thermal activated process which yields an activation energy of 1.914+0.236eV. 展开更多
关键词 High-Temperature Annealing Induced He bubble Evolution in low Energy He Ion Implanted 6H-SiC HRTEM
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Numerical study of separation on the trailing edge of a symmetrical airfoil at a low Reynolds number 被引量:8
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作者 Lei Juanmian Guo Feng Huang Can 《Chinese Journal of Aeronautics》 SCIE EI CAS CSCD 2013年第4期918-925,共8页
This study focuses on the trailing-edge separation of a symmetrical airfoil at a low Rey-nolds number. Finite volume method is adopted to solve the unsteady Reynolds-averaged Navier-Stokes (RANS) equation. Flow of t... This study focuses on the trailing-edge separation of a symmetrical airfoil at a low Rey-nolds number. Finite volume method is adopted to solve the unsteady Reynolds-averaged Navier-Stokes (RANS) equation. Flow of the symmetrical airfoil SD8020 at a low Reynolds number has been simulated. Laminar separation bubble in the flow field of the airfoil is observed and process of unsteady bubble burst and vortex shedding from airfoil surfaces is investigated. The time-dependent lift coefficient is characteristic of periodic fluctuations and the lift curve varies nonlinearly with the attack of angle. Laminar separation occurs on both surfaces of airfoil at small angles of attack. With the increase of angle of attack, laminar separation occurs and then reattaches near the trailing edge on the upper surface of airfoil, which forms laminar separation bubble. When the attack of angle reaches certain value, the laminar separation bubble is unstable and produces two kinds of large scale vortex, i.e. primary vortex and secondary vortex. The periodic processes that include secondary vortex production, motion of secondary vortex and vortex shedding cause fluctuation of the lift coefficient. The periodic time varies with attack of angle. The secondary vortex is relatively stronger than the primary vortex, which means its influence is relatively stronger than the primary vortex. 展开更多
关键词 Laminar separation bubble low Reynolds number Simulation Symmetrical airfoil Trailing-edge separation
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