为了在单片上实现半导体激光二极管与探测器的集成,开展了外延材料生长及结构工艺的设计研究。通过刻蚀工艺引入隔离区的方法制备了集成背光探测器的1.3μm InGaAsP/InP半导体激光二极管芯片。管芯的光电性能测试显示,激光二极管具有较...为了在单片上实现半导体激光二极管与探测器的集成,开展了外延材料生长及结构工艺的设计研究。通过刻蚀工艺引入隔离区的方法制备了集成背光探测器的1.3μm InGaAsP/InP半导体激光二极管芯片。管芯的光电性能测试显示,激光二极管具有较低的阈值电流17.62 m A,较高的斜率效率0.13 m W/mA,输出功率可达11 m W;在-0.7 V的反向偏压下,探测器区域对光信号具有良好的线性响应,MPD的光电流超过0.3 m A,在-1.7 V的反向偏压下,暗电流可低至25 nA。展开更多
A series of large-area,flexible and transparent ultraviolet(UV)photodetectors(PDs)based on Ag nanowire(NW)@ZnO nanorods(NRs)are fabricated by an inexpensive,facile and effective approach.These Ag NW@ZnO NRs are succes...A series of large-area,flexible and transparent ultraviolet(UV)photodetectors(PDs)based on Ag nanowire(NW)@ZnO nanorods(NRs)are fabricated by an inexpensive,facile and effective approach.These Ag NW@ZnO NRs are successfully synthesized using a two-step method in an oil bath with a high surface-to-volume ratio and good crystallinity.The PDs are fabricated by drop-coating with different drop-coating times on the surface of polyethylene terephthalate(PET)coupled with Au electrodes.By optimizing the cross-linked network of Ag NW@ZnO NRs,PD2 with a size greater than 25 mm exhibits excellent photoresponse under UV light illumination of 365 nm(1.3 m W cm^(-2))with a bias of 5 V:a high sensitivity of over 10^(3),and a much shorter rise/decay time of 2.6 s/2.3 s.Simultaneously,the detector exhibits an average transmittance of more than 70%in the visible light region,as well as good flexibility and excellent mechanical stability under a bending angle of 120°over 1000 circles bending.These integral advantages have significant potential for practical applications and mass production.展开更多
文摘为了在单片上实现半导体激光二极管与探测器的集成,开展了外延材料生长及结构工艺的设计研究。通过刻蚀工艺引入隔离区的方法制备了集成背光探测器的1.3μm InGaAsP/InP半导体激光二极管芯片。管芯的光电性能测试显示,激光二极管具有较低的阈值电流17.62 m A,较高的斜率效率0.13 m W/mA,输出功率可达11 m W;在-0.7 V的反向偏压下,探测器区域对光信号具有良好的线性响应,MPD的光电流超过0.3 m A,在-1.7 V的反向偏压下,暗电流可低至25 nA。
基金supported by the National Natural Science Foundation of China(No.51775140)partially supported by the Shenzhen Science and Technology Plan(No.JCYJ20180507183511908)+2 种基金the National Science and Technology Major Project(No.2017-VⅠ-0009-0080)the Key-Area Research and Development Program of Guangdong Province(No.2019B010935001)the Industry and Information Technology Bureau of Shenzhen Municipality(No.201806071354163490)。
文摘A series of large-area,flexible and transparent ultraviolet(UV)photodetectors(PDs)based on Ag nanowire(NW)@ZnO nanorods(NRs)are fabricated by an inexpensive,facile and effective approach.These Ag NW@ZnO NRs are successfully synthesized using a two-step method in an oil bath with a high surface-to-volume ratio and good crystallinity.The PDs are fabricated by drop-coating with different drop-coating times on the surface of polyethylene terephthalate(PET)coupled with Au electrodes.By optimizing the cross-linked network of Ag NW@ZnO NRs,PD2 with a size greater than 25 mm exhibits excellent photoresponse under UV light illumination of 365 nm(1.3 m W cm^(-2))with a bias of 5 V:a high sensitivity of over 10^(3),and a much shorter rise/decay time of 2.6 s/2.3 s.Simultaneously,the detector exhibits an average transmittance of more than 70%in the visible light region,as well as good flexibility and excellent mechanical stability under a bending angle of 120°over 1000 circles bending.These integral advantages have significant potential for practical applications and mass production.
