Genetic Transformation of Watermelon with Pumpkin DNA by Low Energy Ion Beam-mediated Introduction

The No.601 watermelon (citrullus lanatus) seeds were treated with 25 keV N+ implantation at the dosage of 7.8 ×1016 ions/cm2. After treatment, watermelon seeds were incubated with 380μg/μl pumpkin (Cucubita, maxima Duch) DNA solution at 35 ℃ for 5 hours. By two-generations of selection and resistance screening at seedling stage, one transformed material was selected out, whose rind color is similar to that of the donor pumpkin and whose size of seeds is between that of the donor and the receptor. Using AFLP (amplified fragment length polymorphism) technique, two polymorphic DNA fragments were amplified. This primarily testified that the donor DNA fragments/gene were introduced into the receptor cell and integrated into the genomic DNA of the receptor.

Study of Biological Effects of Low Energy Ion Implantation on Tomato and Radish Breeding

Biological effects of 30 keV low energy nitrogen ion implantation on the seeds of five types of tomato and one type of radish were investigated. Results showed that low energy ions have different effects on different vegetables. The whole dose-response curve of the germination ratio did not take on ＂the shape of saddle＂, but was a rising and falling waveform with the increase or decrease in ion implantation. In the vegetable of Solanaceae, two outstanding aberrant plants were selected from M1 of Henan No.4 tomato at a dose of 7x 1017 nitrogen ions/cm2, which had thin-leaves, long-petal and nipple tip fruit stably inherited to Mr. Furthermore the analysis of the isozyme showed that the activity of the mutant tomato seedling was distinct in quantity and color. In Raphanus sativus L., the aberrances were obvious in the mutant of radish 791 at a dose of 5×10^17 nitrogen ions/cm^2, and the weight of succulent root and the volume of growth were over twice the control＇s. At present, many species for breeding have been identified in the field and only stable species have been selected for the experiment of production. It is evident that the low energy ion implantation technology has clear effects on vegetables＇ genetic improvement.

Bioeffects of Low Energy Ion Beam Implantation:DNA Damage,Mutation and Gene Transter

Low-energy ion beam implantation （10 - 200 keV） has been proved to have a wide range of biological effects and is broadly used in the breeding of crops and micro-organisms.To understand its mechanisms better and facilitate its applications, the developments in the bioeffects of low energy ion beam implantation in the past twenty years are summarized in this paper.

Interaction between Low Energy ions and the Complicated Organism

Low energy ions exist widely in natural world, but people pay a little attention on. the interaction between low energy ions and matter, it is even more out of the question of studying on the relation of low energy ions and the complicated organism. The discovery of bioeffect induced by ion implantation has, however, opened a new branch in the field of ion beam application in life sciences. This paper reports recent advances in research on the role of low energy ions in Chemical synthesis of the biomolecules and application in genetic modification.

Energy Transformation in Mammalian Cell for Low Energy Ion Beam Impinging

This study investigates the stopping power of a mammalian cell for low energy ions. The energy equation of the incident ion has been conducted based on the elastic collision between the pairs of nuclei in order to establish the stopping powers of the mammalian cell for low energy ion implantation. Based on the biological structure of the mammalian cell and the measured thickness of the V79 cell, a physical structural model is proposed that the attached cell is approximately of a model of a constringent multi-membrane structure （C-2M model） in order to analyse the stopping power of the mammalian cell for low energy ions. With this model we have determined the mean line energy transfer, and roughly estimated the depth of ion implantation on the selected Chinese hamster V79 cell for 30 keV N^＋ ions at a flux of 1 × 10^15 ion/cm^2, which is in agreement with those by using Monte Carlo methods.

Creation of High-Yield Polyhydroxyalkanoates Engineered Strains by Low Energy Ion Implantation

Polyhydroxyalkanoates （PHAs）, as a candidate for biodegradable plastic materials, can be synthesized by numerous microorganisms. However, as its production cost is high in comparison with those of chemically synthesized plastics, a lot of research has been focused on the efficient production of PHAs using different methods. In the present study, the mutation effects of PHAs production in strain pCB4 were investigated with implantation of low energy ions. It was found that under the implantation conditions of 7.8×10^14 N^＋/cm^2 at 10 keV, a high-yield PHAs strain with high genetic stability was generated from many mutants. After optimizing its fermentation conditions, the biomass, PHAs concentration and PHAs content of pCBH4 reached 2.26 g/L, 1.81 g/L, and 80.08% respectively, whereas its wild type controls were about 1.24 g/L, 0.61 g/L, and 49.20%. Moreover, the main constituent of PHAs was identified as poly-3-hydroxybutyrates （PHB） in the mutant stain and the yield of this compound was increased up to 41.33% in contrast to that of 27.78% in the wild type strain.

Mutation Breeding of an Organic Phosphorus-Solubilizing Bacterium B3 by Low Energy Ion Beam Implantation

A preliminary study on the mutation breeding of an organic phosphorus-solubilizing bacterium B3 by low-energy N^＋ ion beam was conducted. Analysis of dosage vs. survival rate and mutation rate showed that the dosage of 3×10^15 ions/cm^2 was optimal for the mutation. Some parameters for determining the efficient phosphorus content were studied to simplify the protocols for screening. Ultimately one reliable mutant was screened out under plating and flask-culturing screening conditions. Importantly, a novel phosphorus-dissolving mechanism is reported for the first time in terms of bio-surfactant production, which indicates that bio-surfactant might play a vital role in phosphorus-dissolving for some phosphobacteria.

First results of the low energy ion spectrometer onboard a Chinese geosynchronous satellite

A Chinese geosynchronous satellite was launched on June 23,2020.It carried a plasma detection package to monitor the space environment around the orbit.Here we report the inflight performance of a low energy ion spectrometer(LEIS),one of the primary instruments in the plasma detection package,and its initial observations in flight.Benefiting from the state-of-the-art design of a top-hat electrostatic analyzer cooperated with angular scanning deflectors,three-dimensional measurement of ions in space with a large field of view of 360°×90°and a wide energy range from 50 eV to 25 keV per charge has been achieved.The differential energy flux spectra of ions around the orbit have shown clear signatures of surface charging and storm/substorm ion injections.The occurrence of surface charging could be caused by the lack of photoemission at the Earth's eclipse(near the midnight)or the storm energetic electron injection at the dawn sector.The present results demonstrated a good performance of the LEIS payload in flight for monitoring the space ion environment around the orbit.In situ measurements of the LEIS payload provide us an opportunity to understand the magnetospheric ion dynamics and forecast the associate space weather impacts.

Preliminary Studies on Base Substitutions and Repair of DNA Mismatch Damage Stimulated by Low Energy N^+ Ion Beam Implantation in Escherichia coli

Ever since the low energy N+ ion beam has been accepted that the mutation effects of ionizing radiation are attributed mainly to direct or indirect damage to DNA. Evidences based on naked DNA irradiation in support of a mutation spectrum appears to be consistent, but direct proof of such results in vivo are limited. Using mutS, dam and/or dcm defective Eschericha coli imitator strains, an preliminary experimental system on induction of in vivo mutation spectra of low energy N+ ion beam has been established in this study. It was observed that the mutation rates of rifampicin resistance induced by N+ implantation were quite high, ranging from 9.2 x 10~8 to 4.9× 10~5 at the dosage of 5.2×1014 ions/cm2. Strains all had more than 90-fold higher mutation rate than its spontaneous mutation rate determined by this method. It reveals that base substitutions involve in induction of mutation of low energy nitrogen ion beam implantation. The mutation rates of mutator strains were nearly 500-fold (GM2929), 400-fold (GM5864) and 6-fold larger than that of AB1157. The GM2929 and GM5864 both lose the ability of repair DNA mismatch damage by virtue of both dam and dcm pathways defective (GM2929) or failing to assemble the repair complex (GM5864) respectively. It may explain the both strains had a similar higher mutation rate than GM124 did. It indicated that DNA cytosine methylase might play an important role in mismatch repair of DNA damage induced by N+ implantation. The further related research were also discussed.

High-Temperature Annealing Induced He Bubble Evolution in Low Energy He Ion Implanted 6H-SiC

Bubble evolution in low energy and high dose He-implanted 6H-SiC upon thermal annealing is studied. The （0001）-oriented 6H-SiC wafers are implanted with 15keV helium ions at a dose of 1×10^17 cm^-2 at room temperature. The samples with post-implantation are annealed at temperatures of 1073, 1173, 1273, and 1473K for 30rain. He bubbles in the wafers are examined via cross-sectional transmission electron microscopy （XTEM） analysis. The results present that nanoscale bubbles are almost homogeneously distributed in the damaged layer of the as-implanted sample, and no significant change is observed in the He-implanted sample after 1073 K annealing. Upon 1193 K annealing, almost full recrystallization of He-implantation-induced amorphization in 6H-SiC is observed. In addition, the diameters of He bubbles increase obviously. With continually increasing temperatures to 1273K and 1473 K, the diameters of He bubbles increase and the number density of lattice defects decreases. The growth of He bubbles after high temperature annealingabides by the Ostwald ripening mechanism. The mean diameter of He bubbles located at depths of 120-135 nm as a function of annealing temperature is fitted in terms of a thermal activated process which yields an activation energy of 1.914＋0.236eV.

Biological Effects of Low Energy Ar^+Ion Bombardment on Silkworm Eggs:a Novel Animal Model

In this study, we found for the first time that silkworm eggs were able to survive in vacuum for a long period of time. Subsequently, 10w energy Ar＋ ions with different energies and fluences were used to bombard silkworm eggs so as to explore the resulting biological effects. Results showed that （i） the exposure of silkworm eggs to vacuum within 10 rain did not cause significant impact on the hatching rates, while the irradiation of silkworm eggs by Ar＋ ions of 25 keV or 30 keV with fiuences ranging from 2.6×2.6× 10^15 ion/cm2 to 8×2.6 × 10^15 ion/cm2 caused a significant impact on the hatching rates, and the hatching rates decreased with the increase in the fluence and energy level; （ii） the irradiation of silkworm eggs by Ar＋ ions of 30 keV with a fluence of 8×2.6 × 10^15 ion/cm2 or 9×2.6 × 10^15 ion/cm2 resulted in a noticeable etching on the egg shell surface which could be observed by a scanning electron microscope; and （iii） the irradiation of silkworm eggs by Ar＋ ions of generated several mutant phenotypes which were 30 keV with a fiuence of 9×2.6× 10^15 ion/cm2 observed in the 5th instar silkworms and a moth.

Evidence for Base Substitutions and Repair of DNA Mismatch Damage Induced by Low Energy N^+ Ion Beam Implantation in E. coli

Ever since the low energy N + ion beam has been accepted, the mutations of ionizing radiation are attributable mainly to avoidance of DNA damages repair. Evidences based on in vivo proof results are limited. Using the E.coli wild type and mutator strains, the mutant frequencies suggest that base substitutions in rpoB gene are induced by the N + implantation. A highly conserved region is selected to get the direct evidence for base substitutions by sequence of the high fidelity PCR amplification products in mutants. Most of the mutants (90.9%, 40/44) have at least one base substitution in the amplification region. The evidences for CG to TA (55%, 22/40), AT to GC (20%, 8/40) and TA to CG (5%, 2/40) transitions are identified. The transversions are AT to TA (15%, 6/40) and GC to CG (5%, 2/40). It is suggested that DNA cytosine methylase might play an important role in mismatch repair of DNA damage induced by N + implantation by analysis of the mutant frequencies of mutator strains.

Unified Hydrodynamics and Pseudorapidity Distributions of Charged Particles Produced in Heavy Ion Collisions at Low Energies at RHIC

In the context of unified hydrodynamics, we discuss the pseudorapidity distributions of the charged particles produced in Au-Au and Cu-Cu collisions at the low RHIC energies of √SNN = 19.6 and 22.4 GeV, respectively. It is found that the unified hydrodynamics alone can give a good description to the experimental measurements. This is different from the collisions at the maximum RHIC energy of √SNN = 200 GeV or at LHC energy of √SNN= 2.76 TeV, in which the leading particles must be taken into account so that we can properly explain the experimental observations.

A Mutant of Bacillus Subtilis with High-Producing Surfactin by Ion Beam Implantation

In order to generate a mutant of Bacillus subtilis with enhanced surface activity through low energy nitrogen ion beam implantation, the effects of energy and dose of ions implanted were studied. The morphological changes in the bacteria were observed by scanning electron microscope （SEM）. The optimum condition of ions implantation, 20 keV of energy and 2.6 × 10^15N^＋/cm^2 in dose, was determined. A mutant, B.s-E-8 was obtained, whose surface activity of 50-fold and 100-fold diluted cell-free Landy medium was as 5.6-fold and 17.4-fold as the wild strain. The microbial growth and biosurfactant production of both the mutant and the wild strain were compared. After purified by ultrafiltration and SOURCE 15PHE, the biosurfactant was determined to be a complex of surfactin family through analysis of electrospray ionization mass spectrum （ESI/MS） and there was an interesting finding that after the ion beam implantation the intensities of the components were different from the wild type strain.

Effect of Ar＋, He＋, and S＋ Irradiation on n-InP Single Crystal

The irradiation effects of Ar＋, He＋, and S＋ with energy from 10 eV to 180 eV on n-InP（100） surface are analyzed by X-ray photoelectron spectroscopy and low energy electron diffraction. After irradiation on the n-InP surface, damage on the surface, displacement of the Fermilevel and formation of sulfur species on S＋ exposed surface are found and studied. Successive annealing is done to suppress the surface states introduced by S＋ exposure. However, it is unsuccessful in removing the damage caused by noble ions. Besides, S＋ ions can efficiently repair the Ar＋ damaged surface, and finally form a fine 2×2 InP surface.

A Mutant Strain of a Surfactant-Producing Bacterium with Increased Emulsification Activity

As reported in this paper, a strain of oil-degrading bacterium Sp - 5 - 3 was determined to belong to Enterobacteriaceae, which would be useful for microbial enhanced oil recovery (MEOR). The aim of our study was to generate a mutant using low energy N+ beam implantation. With 10 keV of energy and 5.2× 1014 N+/cm2 of dose - the optimum condition, a mutant, S-34, was obtained, which had nearly a 5-fold higher surface and a 13-fold higher of emulsifica-tion activity than the wild type. The surface activity was measured by two methods, namely, a surface tension measuring instrument and a recording of the repulsive circle of the oil film; the emulsification activity was scaled through measuring the separating time of the oil-fermentation mixture. The metabolic acid was determined as methane by means of gas chromatography.

Progress of quantum molecular dynamics model and its applications in heavy ion collisions

In this review article,we first briefty introduce the transport theory and quantum molecular dynamics model applied in the study of the heavy ion collisions from low to intermediate energies.The developments of improved quantum molecular dynamics model(ImQMD)and ultra-relativistic quantum molecular dynamics model(UrQMD),are reviewed.The reaction mechanism and phenomena related to the fusion,multinucleon transrer,fragmentation,collective flow and particle production are reviewed and discussed within the framework of the two models.The constraints on the isospin asymmetric muclear equation of state and in-medium nucleon nucleon cross sections by comparing the heavy ion collision data with transport models calculations in last decades are also discussed,and the uncertainties of these constraints are analyzed as well.Finally,we discuss the future direction of the development of the transport models for improving the understanding of the reaction mechanism,the descriptions of various observables,the constraint on the nuclear equation of state,as well as for the constraint on in-medium nucleon-nucleon cross sections.