This paper studied some properties of PdSwr phase related to 670 km discontinuities in detail, and theoretically processed a preliminary analysis to this phase. We discussed the relationships between the incident angl...This paper studied some properties of PdSwr phase related to 670 km discontinuities in detail, and theoretically processed a preliminary analysis to this phase. We discussed the relationships between the incident angle ih of PdSwr phase with its path, epicentral distance, travel-time and relative amplitude due to low velocity zone (LVZ) of upper mantle, and preliminarily pointed out the main characters of PdSwr phase recorded in seismogram. The PdSwr phase is concentrated in range of 13.5~96.5. When epicentral distance is greater than 33, the start point of PdSwr phase is relatively well distinguishable and could thus be determined more easily. When the epicentral distance is between 13.5 to 33, the triplication of PdSwr's travel-time curve could be slightly distinguished due to the low velocity zone and 220 km seismic velocity discontirluity of upper mantle. The relevant observed PdSwr phase should be in a more complex pattern and it should be more difficult to determine its start point展开更多
Carbon cluster ion implantation is an important technique in fabricating functional devices at mi- cro/nanoscale. In this work, a numerical model is constructed for implantation and implemented with a cutting- edge mo...Carbon cluster ion implantation is an important technique in fabricating functional devices at mi- cro/nanoscale. In this work, a numerical model is constructed for implantation and implemented with a cutting- edge molecular dynamics method. A series of simulations with varying incident energies and incident angles is performed for incidence on silicon substrate and correlated effects are compared in detail. Meanwhile, the behav- ior of the cluster during implantation is also examined under elevated temperatures. By mapping the nanoscopic morphology with variable parameters, numerical formalism is proposed to explain the different impacts on phrase transition and surface pattern formation. Particularly, implantation efficiency （IE） is computed and further used to evaluate the performance of the overall process. The calculated results could be properly adopted as the theoretical basis for designing nano-structures and adjusting devices＇ properties.展开更多
文摘This paper studied some properties of PdSwr phase related to 670 km discontinuities in detail, and theoretically processed a preliminary analysis to this phase. We discussed the relationships between the incident angle ih of PdSwr phase with its path, epicentral distance, travel-time and relative amplitude due to low velocity zone (LVZ) of upper mantle, and preliminarily pointed out the main characters of PdSwr phase recorded in seismogram. The PdSwr phase is concentrated in range of 13.5~96.5. When epicentral distance is greater than 33, the start point of PdSwr phase is relatively well distinguishable and could thus be determined more easily. When the epicentral distance is between 13.5 to 33, the triplication of PdSwr's travel-time curve could be slightly distinguished due to the low velocity zone and 220 km seismic velocity discontirluity of upper mantle. The relevant observed PdSwr phase should be in a more complex pattern and it should be more difficult to determine its start point
基金supported by the National Natural Science Foundation of China(Nos.51622507,61471255,61474079,61403273,51502193,51205273)the Natural Science Foundation of Shanxi(Nos.201601D021057,201603D421035)+3 种基金the Youth Foundation Project of Shanxi Province(Nos.2015021097)the Doctoral Fund of MOE of China(No.20131402110013)the National High Technology Research and Development Program of China(No.2015AA042601)the Specialized Project in Public Welfare from The Ministry of Water Resources of China(Nos.1261530110110)
文摘Carbon cluster ion implantation is an important technique in fabricating functional devices at mi- cro/nanoscale. In this work, a numerical model is constructed for implantation and implemented with a cutting- edge molecular dynamics method. A series of simulations with varying incident energies and incident angles is performed for incidence on silicon substrate and correlated effects are compared in detail. Meanwhile, the behav- ior of the cluster during implantation is also examined under elevated temperatures. By mapping the nanoscopic morphology with variable parameters, numerical formalism is proposed to explain the different impacts on phrase transition and surface pattern formation. Particularly, implantation efficiency （IE） is computed and further used to evaluate the performance of the overall process. The calculated results could be properly adopted as the theoretical basis for designing nano-structures and adjusting devices＇ properties.
