A novel voltage-controlled oscillator（VCO） topology with low voltage and low power is presented. It employed the inductive-biasing to build a feedback path between the tank and the MOS gate to enhance the voltage ga...A novel voltage-controlled oscillator（VCO） topology with low voltage and low power is presented. It employed the inductive-biasing to build a feedback path between the tank and the MOS gate to enhance the voltage gain from output nodes of the tank to the gate node of the cross-coupled transistor. Theoretical analysis using timevarying phase noise theory derives closed-form symbolic formulas for the 1/f^2 phase noise region, showing that this feedback path could improve the phase noise performance. The proposed VCO is fabricated in TSMC 0.13 m CMOS technology. Working under a 0.3 V supply voltage with 1.2 m W power consumption, the measured phase noise of the VCO is –119.4 d Bc/Hz at 1 MHz offset frequency from the carrier of 4.92 GHz, resulting in an Fo M of 192.5 d Bc/Hz.展开更多
In this work,the performance of Lg = 22 nm In（0.75）Ga（0.25）As channel-based high electron mobility transistor（HEMT） on InP substrate is compared with metamorphic high electron mobility transistor（MHEMT） on GaA...In this work,the performance of Lg = 22 nm In（0.75）Ga（0.25）As channel-based high electron mobility transistor（HEMT） on InP substrate is compared with metamorphic high electron mobility transistor（MHEMT） on GaAs substrate.The devices features heavily doped In（0.6）Ga（0.4）As source/drain（S/D） regions,Si double δ-doping planar sheets on either side of the In（0.75）Ga（0.25） As channel layer to enhance the transconductance,and buried Pt metal gate technology for reducing short channel effects.The TCAD simulation results show that the InP HEMT performance is superior to GaAs MHEMT in terms of fT,f（max） and transconductance（g（mmax））.The 22 nm InP HEMT shows an fT of 733 GHz and an f（max） of 1340 GHz where as in GaAs MHEMT it is 644 GHz and 924 GHz,respectively.InGaAs channel-based HEMTs on InP/GaAs substrates are suitable for future sub-millimeter and millimeter wave applications.展开更多
基金Project supported by the National Science and Technology Major Project of China(No.2011ZX03004-002-01)
文摘A novel voltage-controlled oscillator（VCO） topology with low voltage and low power is presented. It employed the inductive-biasing to build a feedback path between the tank and the MOS gate to enhance the voltage gain from output nodes of the tank to the gate node of the cross-coupled transistor. Theoretical analysis using timevarying phase noise theory derives closed-form symbolic formulas for the 1/f^2 phase noise region, showing that this feedback path could improve the phase noise performance. The proposed VCO is fabricated in TSMC 0.13 m CMOS technology. Working under a 0.3 V supply voltage with 1.2 m W power consumption, the measured phase noise of the VCO is –119.4 d Bc/Hz at 1 MHz offset frequency from the carrier of 4.92 GHz, resulting in an Fo M of 192.5 d Bc/Hz.
文摘In this work,the performance of Lg = 22 nm In（0.75）Ga（0.25）As channel-based high electron mobility transistor（HEMT） on InP substrate is compared with metamorphic high electron mobility transistor（MHEMT） on GaAs substrate.The devices features heavily doped In（0.6）Ga（0.4）As source/drain（S/D） regions,Si double δ-doping planar sheets on either side of the In（0.75）Ga（0.25） As channel layer to enhance the transconductance,and buried Pt metal gate technology for reducing short channel effects.The TCAD simulation results show that the InP HEMT performance is superior to GaAs MHEMT in terms of fT,f（max） and transconductance（g（mmax））.The 22 nm InP HEMT shows an fT of 733 GHz and an f（max） of 1340 GHz where as in GaAs MHEMT it is 644 GHz and 924 GHz,respectively.InGaAs channel-based HEMTs on InP/GaAs substrates are suitable for future sub-millimeter and millimeter wave applications.
