Low power DCVSL circuits employing AC power supply

In view of changing the type of energy conversion in CMOS circuits, this paper investigates low power CMOS circuit design, which adopts a gradually changing power clock. First, we discuss the algebraic expressions and the corresponding properties of clocked power signals. Then the design procedure is summed up for converting complementary CMOS logic gates employing DC power to the power-clocked CMOS gates employing AC power. On this basis, the design of differential cas-code voltage switch logic (DCVSL) circuits employing AC power clocks is proposed. The PSPICE simulations using a sinusoidal power-clock demonstrate that the designed power-clocked DCVSL circuit has a correct logic function and low power characteristics. Finally, an interface circuit to convert clocked signals into the standard logic levels of a CMOS circuit is proposed, and its validity is verified by computer simulations.

A 320 mV,6 kb subthreshold 10T SRAM employing voltage lowering techniques

This paper presents a 6 kb SRAM that uses a novel 10T cell to achieve a minimum operating voltage of 320 mV in a 130 nm CMOS process. A number of low power circuit techniques are included to enable the proposed SRAM to operate in the subthreshold region. The reverse short channel effect and the reverse narrow channel effect are utilized to improve the performance of the SRAM. A novel subthreshold pulse generation circuit produces an ideal pulse to make read operation stable. A floating write bit-line effectively reduces the standby leakage consumption. Finally, a short read bit-line makes the read operation fast and energy-saving. Measurements indicate that these techniques are effective, the SRAM can operate at 800 kHz and consume 1.94/zW at its lowest voltage （320 mV）.