Hydrogenated microcrystalline silicon(μc-Si:H)films were prepared on glass and silicon substrates by radio frequency magnetron sputtering at 100°C using a mixture of argon(Ar)and hydrogen(H2)gasses as precursor ...Hydrogenated microcrystalline silicon(μc-Si:H)films were prepared on glass and silicon substrates by radio frequency magnetron sputtering at 100°C using a mixture of argon(Ar)and hydrogen(H2)gasses as precursor gas.The effects of the ratio of hydrogen flow(H2/(Ar+H2)%)on the microstructure were evaluated.Results show that the microstructure,bonding structure,and surface morphology of theμc-Si:H films can be tailored based on the ratio of hydrogen flow.An amorphous to crystalline phase transition occurred when the ratio of hydrogen flow increased up to 50%.The crystallinity increased and tended to stabilize with the increase in ratio of hydrogen flow from 40%to 70%.The surface roughness of thin films increased,and total hydrogen content decreased as the ratio of hydrogen flow increased.Allμc-Si:H films have a preferred(111)orientation,independent of the ratio of hydrogen flow.And theμc-Si:H films had a dense structure,which shows their excellent resistance to post-oxidation.展开更多
采用硫脲络合-火焰原子吸收光谱法测定低硅铝合金中的银元素含量。实验探讨了酸度及硫脲用量对银测定的影响及铝合金中基体元素与共存元素对银元素分析线的干扰情况。结果表明：选用9%的盐酸和3%的硝酸溶解试样最好，加入5 mL 50 g/L硫...采用硫脲络合-火焰原子吸收光谱法测定低硅铝合金中的银元素含量。实验探讨了酸度及硫脲用量对银测定的影响及铝合金中基体元素与共存元素对银元素分析线的干扰情况。结果表明：选用9%的盐酸和3%的硝酸溶解试样最好，加入5 mL 50 g/L硫脲溶液可消除氯离子对试验结果的影响，基体铝元素和其它共存元素不干扰银的测定。根据低硅铝合金中银元素的含量范围，合成系列标准溶液，建立工作曲线，工作曲线的线性范围为0.05%～0.50%。银元素含量为0.30%的样品测定结果的相对标准偏差为0.15%（n=8），标准加入回收率为96.8%～98.5%。该方法操作简便、重现性好、测量结果准确可靠。展开更多
基金Projects(51505050,51805063) supported by the National Natural Science Foundation of China for Young ScholarsProjects(KJ1500942,KJQN201801134) supported by the Scientific and Technological Research Program of Chongqing Education Commission of ChinaProjects(cstc2017jcyjAX0075,cstc2015jcyj A50033) supported by the Chongqing Research Program of Basic Research and Frontier Technology,China
文摘Hydrogenated microcrystalline silicon(μc-Si:H)films were prepared on glass and silicon substrates by radio frequency magnetron sputtering at 100°C using a mixture of argon(Ar)and hydrogen(H2)gasses as precursor gas.The effects of the ratio of hydrogen flow(H2/(Ar+H2)%)on the microstructure were evaluated.Results show that the microstructure,bonding structure,and surface morphology of theμc-Si:H films can be tailored based on the ratio of hydrogen flow.An amorphous to crystalline phase transition occurred when the ratio of hydrogen flow increased up to 50%.The crystallinity increased and tended to stabilize with the increase in ratio of hydrogen flow from 40%to 70%.The surface roughness of thin films increased,and total hydrogen content decreased as the ratio of hydrogen flow increased.Allμc-Si:H films have a preferred(111)orientation,independent of the ratio of hydrogen flow.And theμc-Si:H films had a dense structure,which shows their excellent resistance to post-oxidation.
文摘采用硫脲络合-火焰原子吸收光谱法测定低硅铝合金中的银元素含量。实验探讨了酸度及硫脲用量对银测定的影响及铝合金中基体元素与共存元素对银元素分析线的干扰情况。结果表明：选用9%的盐酸和3%的硝酸溶解试样最好，加入5 mL 50 g/L硫脲溶液可消除氯离子对试验结果的影响，基体铝元素和其它共存元素不干扰银的测定。根据低硅铝合金中银元素的含量范围，合成系列标准溶液，建立工作曲线，工作曲线的线性范围为0.05%～0.50%。银元素含量为0.30%的样品测定结果的相对标准偏差为0.15%（n=8），标准加入回收率为96.8%～98.5%。该方法操作简便、重现性好、测量结果准确可靠。
