Selective Area Growth and Characterization of GaN Nanorods Fabricated by Adjusting the Hydrogen Flow Rate and Growth Temperature with Metal Organic Chemical Vapor Deposition

CaN nanorods are successfully fabricated by adjusting the flow rate ratio of hydrogen （H2）/nitrogen （N2） and growth temperature of the selective area growth （SAG） method with metal organic chemical vapor deposition （MOCVD）. The SAG template is obtained by nanospherical-lens photolithography. It is found that increasing the flow rate of 1-12 will change the CaN crystal shape from pyramid to vertical rod, while increasing the growth temperature will reduce the diameters of GaN rods to nanometer scale. Finally the CaN nanorods with smooth lateral surface and relatively good quality are obtained under the condition that the H2：N2 ratio is 1：1 and the growth temperature is 1030℃. The good crystal quality and orientation of GaN nanorods are confirmed by high resolution transmission electron microscopy. The cathodoluminescence spectrum suggests that the crystal and optical quality is also improved with increasing the temperature.

Low-leakage-current AlGaN/GaN HEMTs on Si substrates with partially Mg-doped GaN buffer layer by metal organic chemical vapor deposition

High-performance low-leakage-current A1GaN/GaN high electron mobility transistors （HEMTs） on silicon （111） sub- strates grown by metal organic chemical vapor deposition （MOCVD） with a novel partially Magnesium （Mg）-doped GaN buffer scheme have been fabricated successfully. The growth and DC results were compared between Mg-doped GaN buffer layer and a unintentionally onμe. A 1μ m gate-length transistor with Mg-doped buffer layer exhibited an OFF-state drain leakage current of 8.3 × 10-8 A/mm, to our best knowledge, which is the lowest value reported for MOCVD-grown A1GaN/GaN HEMTs on Si featuring the same dimension and structure. The RF characteristics of 0.25-μ m gate length T-shaped gate HEMTs were also investigated.

Room Temperature and Reduced Pressure Chemical Vapor Deposition of Silicon Carbide on Various Materials Surface

At room temperature, 300 K, silicon carbide film was formed using monomethylsilane gas on the reactive surface prepared using argon plasma. Entire process was performed at reduced pressure of 10 Pa in the argon plasma etcher, without a substrate transfer operation. By this process, the several-nanometer-thick amorphous thin film containing silicon-carbon bonds was obtained on various substrates, such as semiconductor silicon, aluminum and stainless steel. It is concluded that the room temperature silicon carbide thin film formation is possible even at significantly low pressure, when the substrate surface is reactive.

Effect of Deposition Time on Microstructures and Growth Behavior of ZrC Coatings Prepared by Low Pressure Chemical Vapor Deposition with the Br2-Zr-C3H6-H2-Ar System

ZrC coatings were deposited on graphite substrates by low pressure chemical vapor deposition（LPCVD） with the Br2-Zr-C3H6-H2-Ar system. The effects of deposition time on the microstructures and growth behavior of ZrC coatings were investigated. ZrC coating grew in an island-layer mode. The formation of coating was dominated by the nucleation of ZrC in the initial 20 minutes, and the rapid nucleation generated a fine-grained structure of ZrC coating. When the deposition time was over 30 min, the growth of coating was dominated by that of crystals, giving a column-arranged structure. Energy dispersive X-ray spectroscopy showed that the molar ratio of carbon to zirconium was near 1：1 in ZrC coating, and X-ray photoelectron spectroscopy showed that ZrC was the main phase in coatings, accompanied by about 2.5mol% ZrO2 minor phase.

Determination of Nickel and Palladium in Environmental Samples by Low Temperature ETV-ICP-OES Coupled with Liquid-liquid Extraction with Dimethylglyoxime as Both Extractant and Chemical Modifier

A novel method for the determination of nickel and palladium in environmental samples by low temperature ETV-ICP-OES with dimethylglyoxime（DMG） as both the extractant and chemical modifier has been developed. In this study, it was found that nickel and palladium can form complexes with dimethylglyoxime（0. 05%, mass fraction） at pH 6.0 and can be extracted into chloroform quantitatively. The complexes can be evaporated into plasma at a suita-ble temperature（ 1400℃） for ICP-OES detection. Under the optimized conditions, the detection limits of nickel and palladium are 0.48 and 0. 40 ng/mL, respectively, while the RSD values are separately 5.0% and 3.1% （p = 50 ng/mL, n = 7）. The proposed method was applied to the determination of the target analytes in environmental sam-ples with satisfactory results.

Synthesis of Carbon Nanotubes using Cu-Cr-O as Catalyst by Chemical Vapor Deposition

A novel powder catalyst Cu-Cr-O applied to the synthesis of carbon nanotubes （CNTs） was developed, which was prepared via ammonia precipitation method. Techniques of thermo-gravimetric/ differential scanning calorimeter （TG-DSC）, X-ray diffraction （XRD） as well as scanning electron microscopy （SEM） and transmission electron microscopy （TEM） have been employed to characterize the thermal decomposition procedure, crystal phase and micro structural morphologies of the as-synthesized materials, respectively. The results show that carbon nanotubes are successfully synthesized using Cu-Cr-O as catalyst when the precursors are calcined at 400, 500, 600, and 700 ℃. The results indicate that the calcination of the Cu-Cr-O catalyst at 600 ℃ is an effective method to get MWCNT with few nano-tube defects or amorphous carbons.

Effect of deposition temperature on properties of boron-doped diamond films on tungsten carbide substrate

Boron-doped diamond(BDD)films were deposited on the tungsten carbide substrates at different substrate temperatures ranging from 450 to 850°C by hot filament chemical vapor deposition(HFCVD)method.The effect of deposition temperature on the properties of the boron-doped diamond films on tungsten carbide substrate was investigated.It is found that boron doping obviously enhances the growth rate of diamond films.A relatively high growth rate of 544 nm/h was obtained for the BDD film deposited on the tungsten carbide at 650°C.The added boron-containing precursor gas apparently reduced activation energy of film growth to be 53.1 kJ/mol,thus accelerated the rate of deposition chemical reaction.Moreover,Raman and XRD analysis showed that heavy boron doping(750 and 850°C)deteriorated the diamond crystallinity and produced a high defect density in the BDD films.Overall,600-700°C is found to be an optimum substrate temperature range for depositing BDD films on tungsten carbide substrate.

Electrical properties of MOCVD-grown GaN on Si (111) substrates with low-temperature AlN interlayers

The electrical properties of the structure of GaN grown on an Si （111） substrate with low-temperature （LT） A1N interlayers by metal-organic chemical-vapour deposition are investigated. An abnormal P-type conduction is observed in our GaN-on-Si structure by Hall effect measurement, which is mainly due to the A1 atom diffusing into the Si substrate and acting as an acceptor dopant. Meanwhile, a constant n-type conduction channel is observed in LT-A1N, which causes a conduction-type conversion at low temperature （50 K） and may further influence the electrical behavior of this structure.

Fabrication of copper nanorods by low-temperature metal organic chemical vapor deposition

Copper nanorods have been synthe-sized in mesoporous SBA-15 by a low-temperature metal organic chemical vapor deposition (MOCVD) employing copper (II) acetylacetonate, Cu(acac)2, and hydrogen as a precursor and reactant gas, re- spectively. The hydrogen plays an important role in chemical reduction of oganometallic precursor which enhances mass transfer in the interior of the SBA-15 porous substrate. Such copper nanostructures are of great potentials in the semiconductor due to their unusual optical, magnetic and electronic properties. In addition, it has been found that chemically modi- fying the substrate surface by carbon deposition is crucial to such synthesis of copper nanostructures in the interior of the SBA-15, which is able to change the surface properties of SBA-15 from hydrophilic to hydrophobic to promote the adsorption of organic cupric precursor. It has also been found that the copper nanoparticles deposited on the external sur- face are almost eliminated and the copper nanorods are more distinct while the product was treated with ammonia. This approach could be achieved under a mild condition: a low temperature (400℃) and vac-uum (2 kPa) which is extremely milder than the con- ventional method. It actually sounds as a foundation which is the first time to synthesize a copper nanorod at a mild condition of a low reaction temperature and pressure.

Effects of Hot Wire Temperature on Properties of GeSi:H Films with High Hydrogen Dilution by Hot-Wire Chemical Vapor Deposition

GeSi:H films are prepared by hot-wire chemical vapor deposition(CVD) with high hydrogen dilution, DH=98%. Effects of hot wire temperature(Tw) on deposition rate, structural properties and bandgap of GeSi:H films are studied with surface profilemeter, Raman spectroscopy, Fourier transformed infrared spectroscopy, and UV-VIS-NIR spectrophotometer. It is found that the deposition rate(Rd) goes up with increasing of Tw, but increasing rate of Rd declines when Tw≥1 550 ℃. High Tw is beneficial to the formation of Ge-Si, but it has little effect on relative contents of the hydrogen bonds(Ge-H, Si-H, etc.) in the films. In the Tw range of 1 400-1 850 ℃, the maximum bandgap of the GeSi:H films is 1.39 eV at Tw =1 450 ℃ and the band gap decreases with Tw increasing when Tw≥1 450 ℃.

Effect of hydrogen on low temperature epitaxial growth of polycrystalline silicon by hot wire chemical vapor deposition

Polycrystalline silicon （poly-Si） films were prepared by hot-wire chemical vapor deposition （HWCVD） at a low substrate temperature of 525 ℃. The influence of hydrogen on the epitaxial growth of ploy-Si films was investigated. Raman spectra show that the poly-Si films are fully crystallized at 525 ℃ with a different hydrogen dilution ratio （50%-91.7%）. X-ray diffraction, grazing incidence X-ray diffraction and SEM images show that the poly-Si thin films present （100） preferred orientation on （100） c-Si substrate in the high hydrogen dilution condition. The P-type poly-Si film prepared with a hydrogen dilution ratio of 91.7% shows a hall mobility of 8.78 cm2/（V-s） with a carrier concentration of 1.3 × 10^20 cm^-3, which indicates that the epitaxial poly-Si film prepared by HWCVD has the possibility to be used in photovoltaic and TFT devices.

TOPCon太阳电池单面沉积Poly-Si的工艺研究

目前隧穿氧化层钝化接触(TOPCon)电池制造技术越来越成熟,所耗成本不断降低。行业内普遍采用低压化学气相沉积(LPCVD)方式进行双面沉积或单面沉积。单面沉积存在Poly-Si绕镀问题,严重影响电池片转化效率和外观质量,同时正面绕镀层去除难度较大,在用碱溶液去除绕镀层的同时,存在绕镀层去除不彻底或者非绕镀区域P^(+)层被腐蚀的风险,导致P^(+)发射极受损,严重影响电池片外观质量与性能。双面沉积可避免上述问题,但产能减少一半,制造成本增加。本文对单面沉积Poly-Si工艺及绕镀层去除工艺进行研究,在TOPCon电池正面及背面制作了一层合适厚度的氧化层掩膜,搭配合适的清洗工艺、去绕镀清洗工艺,既可有效地去除P^(+)层绕镀的Poly-Si,也可很好地保护正面P^(+)层及背面掺杂Poly-Si层不受破坏,同时可大幅提升产能。

Simulation of Temperature Distribution in Hot Filament Chemical Vapor Deposition Diamond Films Growth on Si C Seals

In this study, the temperature and gas velocity distributions in hot filament chemical vapor deposition(HFCVD) diamond film growth on the end surfaces of seals are simulated by the finite volume method. The influence of filament diameter, filament separation and rotational speed of the substrates is considered. Firstly,the simulation model is established by simplifying operating conditions to simulate the temperature and gas velocity distributions. Thereafter, the deposition parameters are optimized as 0.6 mm filament diameter, 18 mm filament separation and 5 r/min rotational speed to get the uniform temperature distribution. Under the influence of the rotational speed, the difference between temperature gradients along the directions perpendicular to the filament and parallel to the filament becomes narrow, it is consistent with the actual condition, and the maximum temperature difference on the substrates decreases to 7.4?C. Furthermore, the effect of the rotational speed on the gas velocity distribution is studied. Finally, diamond films are deposited on the end surfaces of Si C seals with the optimized deposition parameters. The characterizations by scanning electron microscopy(SEM) and Raman spectroscopy exhibit a layer of homogeneous diamond films with fine-faceted crystals and uniform thickness. The results validate the simulation model.

Characterization of the heteroepitaxial growth of 3C-SiC on Si during low pressure chemical vapor deposition

3C-SiC heteroepitaxial layers were grown on Si substrates using a horizontal,hot-wall low pressure chemical vapor deposition system.The crystal quality,surface morphology and thickness uniformity of the layers were characterized by X-ray diffraction,atomic force microcopy and Fourier transform infrared spectroscopy,respectively.Growth of the epitaxial layer was determined to follow a three-dimensional island mode initially and then switch to a step-flow mode as the growth time increases.

Preparation of the highly dense ceramic-metal fuel particle with fine-grained tungsten layer by chemical vapor deposition for the application in nuclear thermal propulsion

The cermet fuel element was achieved by dispersing the UO_(2)particles with or without tungsten(W)coating layer uniformly in the W matrix.It is considered to be a robust and secure fuel for use in nuclear thermal propulsion in the near future.In this study,the effect of deposition temperature on the densification and grain refinement of the W coating layer was investigated.A high-density(19.24 g·cm^(-3))W layer with a uniform thickness(~10μm)and fine grains(~297 nm)was prepared by spouted-bed chemical vapor deposition.The prepared high-density,fine-grained W layer has the following advantages.It can prevent direct contact between fuel particles,resulting in a more uniform fuel distribution.In addition,it can decrease the reaction probability between the fuel kernel and H2,and prevent the release of fission products from the fuel kernel by extending the diffusion path at grain boundaries more efficiently.Moreover,the high-density,fine-grained W layer showed outstanding thermal and mechanical performance.Its average hardness and Young's modulus were approximately 7 and 200 GPa,respectively.The thermal conductivity of the W film was 101-124 W·m^(-1)·K^(-1)at 298-773 K.This work furthers our understanding of the potential application of the high-density,fine-grained W layer in nuclear thermal propulsion.

Effect of F- and CH-Doped on Dielectric Properties of SiCOH Films Deposited by Decamethylcyclopentasiloxane Electron Cyclotron Resonance Plasma

We investigate the effect of CH-doped and F-doped on dielectric properties of SiCOH films deposited by de- camethylcyclopentasiloxane （DMCPS） electron cyclotron resonance plasma. The dielectric constant k is closely related to the configurations of films. For the films deposited only using DMCPS, the minimum k is as low as 2.88. By adding CH4 in the precursor, the k value can be reduced to 2.45 due to the film density decreasing by incorporating large size CHx groups. By adding CHF3 in the precursor, the k value can also be reduced to 2.48 due to the incorporation of the weak-polarization F atom. Thus the dielectric constant for SiCOH films depends on not only the film density but also the polarization of atoms. By increasing the film density or by reducing the polarization of atoms under the condition of a lower film density, the low dielectric constant SiCOH films can be obtained.

Effect of pyrolysis temperature on properties of ACF/CNT composites

Activated carbon fiber/carbon nanotube(ACF/CNT) composites were fabricated by chemical vapor deposition(CVD) process.The effects of pyrolysis temperature on properties of ACF/CNT composites,including BET specific surface area,mass increment rate and adsorption efficiency for rhodamine B in solution,were investigated by scanning electron microscopy.The results show that the pyrolysis temperature is a key factor affecting the qualities of ACF/CNT composites.The mass increment rate and BET specific surface area sharply decrease with the increase of pyrolysis temperatures from 550 ℃ to 850 ℃ and the minimum diameter of CNTs appears at 750 ℃.The maximum adsorption efficiency of ACF/CNT composites for rhodamine B is obtained at 650 ℃.ACF/CNT composites are expected to be useful in adsorption field.

Preparation of TiO_(2)-rich Ba-Ti-O thick films by laser chemical vapor deposition method

TiO_(2)-rich Ba-Ti-O films were prepared on Pt/Ti/SiO_(2)/Si substrate by laser chemical vapor deposition(LCVD).Their phase relationship and microstructure were investigated.The single-phase BaTi_(2)O_(5),Ba_(4)Ti_(13)O_(3)0 and BaTi_(5)O_(11) films were prepared at Ti/Ba molar ratios m_(Ti/Ba)=1.84-1.90,2.83 and 4.49-4.55,respectively.The high deposition rate of TiO_(2)-rich Ba-Ti-O films ranged from 54.0μm/h to 177.6μm/h.The permittivity of BaTi_(2)O_(5)film(prepared at m_(Ti/Ba)=1.84 and deposition temperature T_(dep)=877 K),Ba_(4)Ti_(13)O_(3)0 film(prepared at m_(Ti/Ba)=2.83 and T_(dep)=914 K)and BaTi5O11 film(prepared at m_(Ti/Ba)=4.49 and T_(dep)=955 K)were 50,40 and 21,respectively.

Parylene镀层对烧结Nd-Fe-B磁体稳定性的影响

采用化学气相沉积法(CVDP)在Nd-Fe-B磁体和电镀Cu层的Nd-Fe-B磁体表面包覆派瑞林(Parylene)镀层,分析Parylene镀层和Parylene+电镀Cu复合镀层对磁体化学稳定性和温度稳定性的影响。Parylene分子沉积到磁体表面形成一层致密的镀层,镀层表面形成大小不同的颗粒,造成磁体表面粗糙度变大。Parylene镀层与Nd-Fe-B基体结合紧密,未出现缝隙和镀层脱落现象,镀层厚度随Parylene粉末质量增加逐渐增大。Parylene镀层一方面可以有效改善Nd-Fe-B磁体的化学稳定性,提高磁体中性盐雾耐腐蚀性能;另一方面对磁体有很好的抗热氧化保护作用,有利于提高磁体的温度稳定性,降低高温磁通不可逆损失(h_(irr))。Cu镀层的存在不利于Parylene镀层改善磁体化学稳定性和温度稳定性,这是由于电镀Cu层与Nd-Fe-B磁体基体和Parylene镀层结合不紧密,界面存在缝隙与裂痕。

Solvents incubatedπ-πstacking in hole transport layer for perovskite-silicon 2-terminal tandem solar cells with 27.21%efficiency

Room temperature sputtered inorganic nickel oxide(NiO_(x))is one of the most promising hole transport layers(HTL)for perovskite-sillion 2-terminal tandem solar cells with the aid of ultrathin and compact organic layers to passivate the surface defects.In this study,the aromatic solvent with different substituent groups was used to regulate the conformation of poly[bis(4-phenyl)(2,4,6-trimethylphenyl)am ine](PTAA)layer.As a result,the single-junction perovskite solar cell(PSC)gained a power conversion efficiency(PCE)of 20.63%,contributing to a 27.21%efficiency for monolithic perovskite/silicon(double-side polished)2-terminal tandem solar cell,by applying the alkyl aromatic solvent to enhance theπ-πstacking of PTAA molecular chains.The tandem solar cell can maintain 95%initial efficiency after aging over 1000 h.This study provides a universal approach for improving the photovoltaic performance of NiO_(x)/polymer-based perovskite/silicon tandem solar cells and other single junction inverted PSCs.