Ion beam epitaxy （IBE） technology is a significant method for preparing high pure and high quality rare-earth functional films at low growth temperatue. A new method of preparing rare-earth functional films by ion b...Ion beam epitaxy （IBE） technology is a significant method for preparing high pure and high quality rare-earth functional films at low growth temperatue. A new method of preparing rare-earth functional films by ion beam epitaxy was reviewed in details. The recent developments and application of IBE on rare-earth functional films is focused, particularly for high-K materials CeO2, photoluminescence materials Gd2O3 and magnetic semiconductor materials Si1-x Gdx.展开更多
High-quality GaAs films with fine surfaces and GaAs/Ge interfaces on Ge have been achieved via molecular beam epitaxy. The influence of low temperature annealing and low temperature epitaxy on the quality of the film ...High-quality GaAs films with fine surfaces and GaAs/Ge interfaces on Ge have been achieved via molecular beam epitaxy. The influence of low temperature annealing and low temperature epitaxy on the quality of the film when GaAs is grown on a （100） 6 ° offcut towards [111] Ge substrate are investigated by analyzing and comparing the GaAs films that are fabricated via three different processes. A low temperature annealing process after high temperature annealing and a low temperature epitaxy process after the initial GaAs growth play a vital role in improving the quality of GaAs film on a Ge substrate.展开更多
Polycrystalline silicon （poly-Si） films were prepared by hot-wire chemical vapor deposition （HWCVD） at a low substrate temperature of 525 ℃. The influence of hydrogen on the epitaxial growth of ploy-Si films was ...Polycrystalline silicon （poly-Si） films were prepared by hot-wire chemical vapor deposition （HWCVD） at a low substrate temperature of 525 ℃. The influence of hydrogen on the epitaxial growth of ploy-Si films was investigated. Raman spectra show that the poly-Si films are fully crystallized at 525 ℃ with a different hydrogen dilution ratio （50%-91.7%）. X-ray diffraction, grazing incidence X-ray diffraction and SEM images show that the poly-Si thin films present （100） preferred orientation on （100） c-Si substrate in the high hydrogen dilution condition. The P-type poly-Si film prepared with a hydrogen dilution ratio of 91.7% shows a hall mobility of 8.78 cm2/（V-s） with a carrier concentration of 1.3 × 10^20 cm^-3, which indicates that the epitaxial poly-Si film prepared by HWCVD has the possibility to be used in photovoltaic and TFT devices.展开更多
文摘Ion beam epitaxy （IBE） technology is a significant method for preparing high pure and high quality rare-earth functional films at low growth temperatue. A new method of preparing rare-earth functional films by ion beam epitaxy was reviewed in details. The recent developments and application of IBE on rare-earth functional films is focused, particularly for high-K materials CeO2, photoluminescence materials Gd2O3 and magnetic semiconductor materials Si1-x Gdx.
基金Project supported by the Shanghai Municipal Natural Science Foundation,China(Grant No.13ZR1428200)
文摘High-quality GaAs films with fine surfaces and GaAs/Ge interfaces on Ge have been achieved via molecular beam epitaxy. The influence of low temperature annealing and low temperature epitaxy on the quality of the film when GaAs is grown on a （100） 6 ° offcut towards [111] Ge substrate are investigated by analyzing and comparing the GaAs films that are fabricated via three different processes. A low temperature annealing process after high temperature annealing and a low temperature epitaxy process after the initial GaAs growth play a vital role in improving the quality of GaAs film on a Ge substrate.
基金Project supported by the Beijing City Science and Technology Project(No.D121100001812003)the National Basic Research Program of China(No.2011CBA00705)
文摘Polycrystalline silicon （poly-Si） films were prepared by hot-wire chemical vapor deposition （HWCVD） at a low substrate temperature of 525 ℃. The influence of hydrogen on the epitaxial growth of ploy-Si films was investigated. Raman spectra show that the poly-Si films are fully crystallized at 525 ℃ with a different hydrogen dilution ratio （50%-91.7%）. X-ray diffraction, grazing incidence X-ray diffraction and SEM images show that the poly-Si thin films present （100） preferred orientation on （100） c-Si substrate in the high hydrogen dilution condition. The P-type poly-Si film prepared with a hydrogen dilution ratio of 91.7% shows a hall mobility of 8.78 cm2/（V-s） with a carrier concentration of 1.3 × 10^20 cm^-3, which indicates that the epitaxial poly-Si film prepared by HWCVD has the possibility to be used in photovoltaic and TFT devices.
