Total Ionizing Dose Radiation Effects on MOS Transistors with Different Layouts

Both nMOS and pMOS transistors with two-edged and multi-finger layouts are fabricated in a standard commercial 0.6μm CMOS/bulk process to study their total ionizing dose （TID） radiation effects. The leakage current, threshold voltage shift, and transconductance of the devices are monitored before and after T-ray irradiation. Different device bias conditions are used during irradiation. The experiment results show that TID radiation effects on nMOS devices are very sensitive to their layout structures. The impact of the layout on TID effects on pMOS devices is slight and can be neglected.

Effect of Cycloheximide on the Adaptive Response Induced by Low Dose Radiation

Human lymphocytes pre-exposed to 10 mGy or 50 mGy of X-rays become less sensitive to subsequent large dose irradiation, exhibited lower rate of chromosome aberration than expected. This adaptive response could be inhibited by cycloheximide, a protein synthesis inhibitor for successive 2 h period ranging from 0.5h before to 4h after the low dose exposure, indicating that the adaptive response was directly related with the protein synthesis.

Effect of Low Dose Radiation on Intracellular Calcium and Protein Kinase C in Lymphocytes

It is first reported in the present paper that whole-body irradiation (WBI) with low dose X-rays could increase intracellular calcium ions ([Ca2+]i) and stimulate protein kinase C (PKC) activity of mouse lymphocytes. Following WBI of male Kunming micc With 75 mGy X-rays at a dose rate of 12.5 mGy/min the mobilization of [Ca2+]i with Con A in CD4+ and CD8+ Cells in the thymus and spleen was potentiated and the amplitude of [Ca2+], mobilization in thymocytes in response to anti-CD3 monoclonal antibody increased with time from 4 to 24 h following low dose radiation. The PKC activity in the homogenate of spleen was markedly stimulated 12 h after WBl with 75 mGy, reaching its peak value at 24-48 h and coming down to lower than normal on day 7. However, the PKC activity in the separated T lymphocytes reached its peak value at 12 h and that in the B lymphocytes reached its peak value on day 4, both coming down to below control on day 7. The implications of this facilitation of signal transduction in T lymphocytes in the mechanism of immunoenhancement after low dose radiation were discussed

Study of total ionizing dose radiation effects on enclosed gate transistors in a commercial CMOS technology

This paper studies the total ionizing dose radiation effects on MOS （metal-oxide-semiconductor） transistors with normal and enclosed gate layout in a standard commercial CMOS （compensate MOS） bulk process. The leakage current, threshold voltage shift, and transconductance of the devices were monitored before and after γ-ray irradiation. The parameters of the devices with different layout under different bias condition during irradiation at different total dose are investigated. The results show that the enclosed layout not only effectively eliminates the leakage but also improves the performance of threshold voltage and transconductance for NMOS （n-type channel MOS） transistors. The experimental results also indicate that analogue bias during irradiation is the worst case for enclosed gate NMOS. There is no evident different behaviour observed between normal PMOS （p-type channel MOS） transistors and enclosed gate PMOS transistors.

Estimation of enhanced low dose rate sensitivity mechanisms using temperature switching irradiation on gate-controlled lateral PNP transistor

The mechanisms occurring when the switched temperature technique is applied,as an accelerated enhanced low dose rate sensitivity(ELDRS)test technique,are investigated in terms of a specially designed gate-controlled lateral PNP transistor(GLPNP)that used to extract the interface traps(Nit)and oxide trapped charges(Not).Electrical characteristics in GLPNP transistors induced by ^(60)Co gamma irradiation are measured in situ as a function of total dose,showing that generation of Nit in the oxide is the primary cause of base current variations for the GLPNP.Based on the analysis of the variations of Nit and Not,with switching the temperature,the properties of accelerated protons release and suppressed protons loss play critical roles in determining the increased Nit formation leading to the base current degradation with dose accumulation.Simultaneously the hydrogen cracking mechanisms responsible for additional protons release are related to the neutralization of Not extending enhanced Nit buildup.In this study the switched temperature irradiation has been employed to conservatively estimate the ELDRS of GLPNP,which provides us with a new insight into the test technique for ELDRS.

Total Ionizing Dose Radiation Effects in the P-Type Polycrystalline Silicon Thin Film Transistors

The total ionizing dose radiation effects in the polycrystalline silicon thin film transistors are studied. Transfer characteristics, high-frequency capacitance-voltage curves and low-frequency noises (LFN) are measured before and after radiation. The experimental results show that threshold voltage and hole-field-effect mobility decrease, while sub-threshold swing and low-frequency noise increase with the increase of the total dose. The contributions of radiation induced interface states and oxide trapped charges to the shift of threshold voltage are also estimated. Furthermore, spatial distributions of oxide trapped charges before and after radiation are extracted based on the LFN measurements.

Machine learning-based analyses for total ionizing dose effects in bipolar junction transistors

Machine learning methods have proven to be powerful in various research fields.In this paper,we show that research on radiation effects could benefit from such methods and present a machine learning-based scientific discovery approach.The total ionizing dose(TID)effects usually cause gain degradation of bipolar junction transistors(BJTs),leading to functional failures of bipolar integrated circuits.Currently,many experiments of TID effects on BJTs have been conducted at different laboratories worldwide,producing a large amount of experimental data which provides a wealth of information.However,it is difficult to utilize these data effectively.In this study,we proposed a new artificial neural network(ANN)approach to analyze the experimental data of TID effects on BJTs An ANN model was built and trained using data collected from different experiments.The results indicate that the proposed ANN model has advantages in capturing nonlinear correlations and predicting the data.The trained ANN model suggests that the TID hardness of a BJT tends to increase with base current I.A possible cause for this finding was analyzed and confirmed through irradiation experiments.

Synergistic effects of total ionizing dose and radiated electromagnetic interference on analog-to-digital converter

The influence of combined total ionization dose(TID)and radiated electromagnetic interference(EMI)in a commercial analog-to-digital converter(ADC)was studied.The degradation of the direct-current response,the static parameters,and the dynamic parameters caused by the TID and EMI separately and synergistically is presented.The experimental results demonstrate that the increase in TID intensifies data error and the signal-tonoise ratio(SNR)degradation caused by radiated EMI.The cumulative distribution function of EMI failure with respect to data error and SNR with different TIDs was extracted.The decreasing trend of the threshold was acquired with a small sample size of five for each TID group.The result indicates that the ADC is more sensitive in a compound radiation environment.

Total ionizing dose effect in an input/output device for flash memory

Input/output devices for flash memory are exposed to gamma ray irradiation. Total ionizing dose has been shown great influence on characteristic degradation of transistors with different sizes. In this paper, we observed a larger increase of off-state leakage in the short channel device than in long one. However, a larger threshold voltage shift is observed for the narrow width device than for the wide one, which is well known as the radiation induced narrow channel effect. The radiation induced charge in the shallow trench isolation oxide influences the electric field of the narrow channel device. Also, the drain bias dependence of the off-state leakage after irradiation is observed, which is called the radiation enhanced drain induced barrier lowing effect. Finally, we found that substrate bias voltage can suppress the off-state leakage, while leading to more obvious hump effect.

Impact of substrate bias on radiation-induced edge effects in MOSFETs

This paper investigates the effects of gamma-ray irradiation on the Shallow-Trench Isolation （STI） leakage currents in 180-nm complementary metal oxide semiconductor technology. No hump effect in the subthreshold region is observed after irradiation, which is considered to be due to the thin STI corner oxide thickness. A negative substrate bias could effectively suppress the STI leakage, but it also impairs the device characteristics. The three-dimensional simulation is introduced to understand the impact of substrate bias, Moreover, we propose a simple method for extracting the best substrate bias value, which not only eliminates the STI leakage but also has the least impact on the device characteristics.

集成电路和功率器件抗辐射工艺加固技术研究综述

随着我国空间装备的高速发展,尤其是深空探测器,微电子器件抗辐射性能得到广泛关注。抗辐射工艺加固是实现器件抗辐射性能提升的重要途径之一。本文围绕空间总剂量效应和单粒子效应,对近年来集成电路和功率器件辐射效应机理和工艺加固技术的研究进展进行了介绍和总结,为抗辐射工艺加固技术的发展与应用提供了有益参考。

SOI高压LDMOS器件氧化层抗总电离剂量辐射效应研究

绝缘体上硅(SOI)高压横向扩散金属氧化物半导体(LDMOS)器件是高压集成电路的核心器件,对其进行了总电离剂量(TID)辐射效应研究。利用仿真软件研究了器件栅氧化层、场氧化层和埋氧化层辐射陷阱电荷对电场和载流子分布的调制作用,栅氧化层辐射陷阱电荷主要作用于器件沟道区,而场氧化层和埋氧化层辐射陷阱电荷则主要作用于器件漂移区;辐射陷阱电荷在器件内部感生出的镜像电荷改变了器件原有的电场和载流子分布,从而导致器件阈值电压、击穿电压和导通电阻等参数的退化。对80 V SOI高压LDMOS器件进行了总电离剂量辐射实验,结果表明在ON态和OFF态下随着辐射剂量的增加器件性能逐步衰退,当累积辐射剂量为200 krad(Si)时,器件的击穿电压大于80 V,阈值电压漂移为0.3 V,器件抗总电离剂量辐射能力大于200 krad(Si)。

基于X射线晶圆在线辐照实验的16 nm n-FinFETs总剂量效应模型研究

建立了基于X射线晶圆在线辐照实验的16 nm FinFET总剂量效应模型,并对模型的有效性进行了验证。将辐照后器件等效为一个主晶体管与辐射导致的若干寄生晶体管并联,通过改变寄生晶体管的参数对辐照中的物理机制进行了模拟。对不同鳍片数量的内核(core)和输入输出(input output,IO)n-FinFET建立了能够描述器件在不同漏源电压下工作性能的模型,仿真结果与实验数据对比表明,所建立的模型的相对均方根偏差小于15%。

基于VHDL-AMS的模数转换器辐射效应建模与仿真方法

模数转换器(Analog-to-Digital Converter,ADC)是连接模拟信号域与数字信号域的关键器件,而现有研究缺乏ADC辐照效应建模的相关内容.为满足大型模数混合信号系统辐照效应建模仿真的需要,本文提出了建立具有辐照效应的ADC行为级模型的方法.首先根据ADC的工作原理将其拆解为不同的通用模块,使用模拟和混合信号硬件描述语言(Very High speed integrated circuit hardware Description Language for Analog and Mixed Signals,VHDL-AMS)建立了各模块的行为级模型.接着根据基本原理将各模块动态组合为未辐照情况下基本的ADC模型.对于ADC的辐照效应,通过开展辐照试验,测量了ADC芯片HWD7710和SAD9434受总剂量(Total Ionizing Dose,TID)效应和中子辐射(Neutron Radiation,NR)效应影响的工作参数,并利用最小二乘法拟合获得ADC的工作参数与辐照剂量的关系式.最后根据辐照关系式,在基本模型上添加辐照参数模块,并建立两种不同结构ADC的TID与NR模型.通过仿真结果与试验数据对比,验证了所建ADC辐射效应模型的普适性和精度.模型的静态参数仿真结果与试验结果的相对偏差在5%以内,证明该方法支持对不同ADC及不同辐射效应进行辐照效应模型建模.

双极晶体管空间辐射效应的研究进展

双极晶体管具有电流驱动能力强、噪声低、线性度高等优点,已成为航天飞行器中常用的电子元器件。然而,在空间辐射环境下服役时,双极晶体管容易发生性能退化,进而危及航天设备的运行。因此,本文综述了双极晶体管在空间辐射环境中产生的损伤效应,主要包含电离损伤效应、位移损伤效应以及电离/位移损伤协同效应,并分析了双极晶体管的性能退化规律以及损伤机理,从而为双极晶体管的抗辐射研究提供一定的参考。

硅基光电探测器空间辐射效应研究进展

硅基光电子技术结合了高集成度的大规模集成电路制造技术与光电子芯片的大带宽、高速率等优势,推动硅基光电器件在高能物理实验、医学影像和高能粒子碰撞器等领域的广泛应用。然而,应用于空间环境和医疗探测器的光电探测器在运行周期中预计会受到~10^(12)particles/cm^(2)的累积注量,而应用于大型粒子对撞机的新型探测器则要经受~10^(14)particles/cm^(2)的辐射注量。本文详细阐述了硅基光电探测器的空间辐射效应研究现状,主要包括不同粒子辐照后硅基光电二极管、雪崩光电二极管、单光子探测器以及光电倍增管等主流光电探测器的辐射效应研究进展。研究结果表明,探测器抗电离总剂量性能较好,位移损伤是导致其关键性能参数退化的主要原因,由于工作原理差异,各类器件在辐射环境中表现出不同退化行为和作用机理。

nFinFET低温总剂量效应的研究

为研究nFinFET的低温总剂量辐射效应和器件损伤机理,对16 nm工艺体硅nFinFET在300K和77K温度下进行60Co-γ射线辐照试验,总剂量为1 Mrad(Si),利用半导体测试仪测试关键电参数性能。结果表明,300K辐照后器件特性几乎无变化,而77K辐照后观察到阈值电压的负向漂移、跨导的减少以及关断电流的增加。低温环境可以抑制辐照产生的电子空穴对复合,STI区电荷俘获增强,导致器件性能衰减,极低温辐射环境电子系统设计过程中,需对nFinFET器件性能衰减与可靠性充分验证,研究为后续在轨服役工况选取和抗辐射加固设计工作提供了数据和理论支持。

Total dose radiation effects on SOI NMOS transistors with different layouts

Partially-depleted Silicon-On-Insulator Negative Channel Metal Oxide Semiconductor （SOI NMOS） transistors with different layouts are fabricated on radiation hard Separation by IMplanted OXygen （SIMOX） substrate and tested using 10 keV X-ray radiation sources. The radiation performance is characterized by transistor threshold voltage shift and transistor leakage currents as a function of the total dose up to 2.0×10^6 rad（Si）. The results show that the total dose radiation effects on NMOS devices are very sensitive to their layout structures.

Effect of phosphorus ion implantation on back gate effect of partially depleted SOI NMOS under total dose radiation

The mechanism of improving the TID radiation hardened ability of partially depleted silicon-oninsulator（SOI） devices by using the back-gate phosphorus ion implantation technology is studied. The electron traps introduced in Si O2 near back Si O2/Si interface by phosphorus ions implantation can offset positive trapped charges near the back-gate interface. The implanted high concentration phosphorus ions can greatly reduce the back-gate effect of a partially depleted SOI NMOS device, and anti-total-dose radiation ability can reach the level of 1 Mrad（Si） for experimental devices.

Method of simulation of low dose rate for total dose effect in 0.18 μm CMOS technology

Three methods for simulating low dose rate irradiation are presented and experimentally verified by using 0.18 μm CMOS transistors.The results show that it is the best way to use a series of high dose rate irradiations, with 100 °C annealing steps in-between irradiation steps, to simulate a continuous low dose rate irradiation.This approach can reduce the low dose rate testing time by as much as a factor of 45 with respect to the actual 0.5 rad（Si）/s dose rate irradiation.The procedure also provides detailed information on the behavior of the test devices in a low dose rate environment.