Precision measurement and suppression of low-frequency noise in a current source with double-resonance alignment magnetometers

Low-noise high-stability current sources have essential applications such as neutron electric dipole moment measurement and high-stability magnetometers. Previous studies mainly focused on frequency noise above 0.1 Hz while less on the low-frequency noise/drift. We use double resonance alignment magnetometers(DRAMs) to measure and suppress the low-frequency noise of a homemade current source(CS) board. The CS board noise level is suppressed by about 10 times in the range of 0.001-0.1 Hz and is reduced to 100 n A/√Hz at 0.001 Hz. The relative stability of CS board can reach2.2 × 10^(-8). In addition, the DRAM shows a better resolution and accuracy than a commercial 7.5-digit multimeter when measuring our homemade CS board. Further, by combining the DRAM with a double resonance orientation magnetometer,we may realize a low-noise CS in the 0.001-1000 Hz range.

TRPV4-induced Neurofilament Injury Contributes to Memory Impairment after High Intensity and Low Frequency Noise Exposures

Objective Exposure to high intensity, low frequency noise(HI-LFN) causes vibroacoustic disease(VAD),with memory deficit as a primary non-auditory symptomatic effect of VAD. However, the underlying mechanism of the memory deficit is unknown. This study aimed to characterize potential mechanisms involving morphological changes of neurons and nerve fibers in the hippocampus, after exposure to HILFN.Methods Adult wild-type and transient receptor potential vanilloid subtype 4 knockout(TRPV4^(-/-)) mice were used for construction of the HI-LFN injury model. The new object recognition task and the Morris water maze test were used to measure the memory of these animals. Hemoxylin and eosin and immunofluorescence staining were used to examine morphological changes of the hippocampus after exposure to HI-LFN.Results The expression of TRPV4 was significantly upregulated in the hippocampus after HI-LFN exposure. Furthermore, memory deficits correlated with lower densities of neurons and neurofilamentpositive nerve fibers in the cornu ammonis 1(CA1) and dentate gyrus(DG) hippocampal areas in wildtype mice. However, TRPV4^(-/-)mice showed better performance in memory tests and more integrated neurofilament-positive nerve fibers in the CA1 and DG areas after HI-LFN exposure.Conclusion TRPV4 up-regulation induced neurofilament positive nerve fiber injury in the hippocampus,which was a possible mechanism for memory impairment and cognitive decline resulting from HI-LFN exposure. Together, these results identified a promising therapeutic target for treating cognitive dysfunction in VAD patients.

A wideband low-phase-noise LC VCO for DRM/DAB frequency synthesizer

The wideband CMOS voltage-controlled oscillator（VCO）with low phase noise and low power consumption is presented for a DRM/DAB（digital radio mondiale and digital audio broadcasting）frequency synthesizer.In order to obtain a wide band and a large tuning range,a parallel switched capacitor bank is added in the LC tank.The proposed VCO is implemented in SMIC 0.18-μm RF CMOS technology and the chip area is 750 μm×560 μm,including the test buffer circuit and the pads.Measured results show that the tuning range is 44.6%;i.e.,the frequency turning range is from 2.27 to 3.57 GHz.The measured phase noise is-122.22 dBc/Hz at a 1 MHz offset from the carrier.The maximum power consumption of the core part is 6.16 mW at a 1.8 V power supply.

Low frequency noise and radiation response in the partially depleted SOI MOSFETs with ion implanted buried oxide

Low frequency noise behaviors of partially depleted silicon-on-insulator(PDSOI) n-channel metal-oxide semiconductors(MOS) transistors with and without ion implantation into the buried oxide are investigated in this paper. Owing to ion implantation-induced electron traps in the buried oxide and back interface states, back gate threshold voltage increases from44.48 V to 51.47 V and sub-threshold swing increases from 2.47 V/dec to 3.37 V/dec, while electron field effect mobility decreases from 475.44 cm2/V·s to 363.65 cm2/V·s. In addition, the magnitude of normalized low frequency noise also greatly increases, which indicates that the intrinsic electronic performances are degenerated after ion implantation processing. According to carrier number fluctuation theory, the extracted flat-band voltage noise power spectral densities in the PDSOI devices with and without ion implantation are equal to 7×10-10V2·Hz-1and 2.7×10-8V2·Hz-1, respectively, while the extracted average trap density in the buried oxide increases from 1.42×1017cm-3·e V-1to 6.16×1018cm-3·e V-1. Based on carrier mobility fluctuation theory, the extracted average Hooge’s parameter in these devices increases from 3.92×10-5to 1.34×10-2after ion implantation processing. Finally, radiation responses in the PDSOI devices are investigated. Owing to radiation-induced positive buried oxide trapped charges, back gate threshold voltage decreases with the increase of the total dose. After radiation reaches up to a total dose of 1 M·rad(si), the shifts of back gate threshold voltage in the SOI devices with and without ion implantation are-10.82 V and-31.84 V, respectively. The low frequency noise behaviors in these devices before and after radiation are also compared and discussed.

Low noise,continuous-wave single-frequency 1.5-μm laser generated by a singly resonant optical parametric oscillator

We report a low noise continuous-wave （CW） single-frequency 1.5-μm laser source obtained by a singly resonant optical parametric oscillator （SRO） based on periodically poled lithium niobate （PPLN）. The SRO was pumped by a CW single-frequency Nd：YVO4 laser at 1.06μm. The 1.02 W of CW single-frequency signal laser at 1.5 μm was obtained at pump power of 6 W. At the output power of around 0.75 W, the power stability was better than ±l.5% and no mode-hopping was observed in 30 min and frequency stability was better than 8.5 MHz in 1 min. The signal wavelength could be tuned from 1.57 to 1.59 μm by varying the PPLN temperature. The 1.5-μm laser exhibits low noise characteristics, the intensity noise of the laser reaches the shot noise limit （SNL） at an analysis frequency of 4 MHz and the phase noise is less than 1 dB above the SNL at analysis frequencies above 10 MHz.

LOW-FREQUENCY LOW-NOISE CIRCUITS DESIGN USING AN E_n-I_n MODEL

In view of the limitations of a Rn-Gn model in the low frequency range and the defects of an En-In model in common use now, this paper builds a complete En-In model according to the theory of random harmonic. The parameters for the low-noise design such as the equivalent input noisy voltage Ens, the optimum source impedance Zsopt and the minimum noise figure Fmin can be calculated accurately by using this En-In model because it considers the coherence between the noise sources fully. Moreover, this paper points out that it will cause the maximum 30% miscalculation when neglecting the effects of the correlation coefficient 7. Using the series-series circuits as an example, this paper discusses the methods for the En-In noise analysis of electronic circuits preliminarily and demonstrates its correctness through the comparison between the simulated and measured results of the minimum noise figure Fmin of a single current series negative feedback circuit.

Simulation of Quantum Noise in the Low-Light-Level Imaging System

A mathematical model of quantum noise having much effect on the low light imaging system is set up. To simulate the quantum noise, the random numbers obeying noise distribution must be formed and are weighted on the basis of the model created. Three uniform random sequences are built by the linear congruential method, of which two are used to form integer number and decimal fraction parts of the new random sequence respectively and the third to shuffle the new sequence. And then a Gauss sequence is formed out of uniform distribution by a function transforming method. It actualizes the simulation in real time of quantum noise in the low light imaging system, where video flow is extracted in real time, the noise summed up and played back side by side with the original video signs by a simulation software.

Negative gate bias stress effects on conduction and low frequency noise characteristics in p-type poly-Si thin-film transistors

The instability of p-channel low-temperature polycrystalline silicon thin film transistors(poly-Si TFTs)is investigated under negative gate bias stress(NBS)in this work.Firstly,a series of negative bias stress experiments is performed,the significant degradation behaviors in current-voltage characteristics are observed.As the stress voltage decreases from-25 V to-37 V,the threshold voltage and the sub-threshold swing each show a continuous shift,which is induced by gate oxide trapped charges or interface state.Furthermore,low frequency noise(LFN)values in poly-Si TFTs are measured before and after negative bias stress.The flat-band voltage spectral density is extracted,and the trap concentration located near the Si/SiO2 interface is also calculated.Finally,the degradation mechanism is discussed based on the current-voltage and LFN results in poly-Si TFTs under NBS,finding out that Si-OH bonds may be broken and form Si*and negative charge OH-under negative bias stress,which is demonstrated by the proposed negative charge generation model.

Low frequency noise reduction using stiff light composite panels

The experiment presented in this paper is to investigate and analyze the noise reduction at low frequency using stiff light composite panels. Since these composite panels are made of lightweight and stiff materials, this actuation strategy will enable the creation of composite panels for duct noise control without using traditional heavy structural mass. The results suggest that the mass-spring resonance absorption in the case of a comparatively stiff thick panel with a thin flexible plate is more efficient with minimum weight, when subjected to low-frequency (<500 Hz). The efficiency of the panel absorber depends on the mass of the thin flexible plate and the stiffness of the panel.

Degradation of current–voltage and low frequency noise characteristics under negative bias illumination stress in InZnO thin film transistors

The instabilities of indium–zinc oxide thin film transistors under bias and/or illumination stress are studied in this paper. Firstly, illumination experiments are performed, which indicates the variations of current–voltage characteristics and electrical parameters（such as threshold voltage and sub-threshold swing） are dominated by the stress-induced ionized oxygen vacancies and acceptor-like states. The dependence of degradation on light wavelength is also investigated. More negative shift of threshold voltage and greater sub-threshold swing are observed with the decrease of light wavelength.Subsequently, a negative bias illumination stress experiment is carried out. The degradation of the device is aggravated due to the decrease of recombination effects between ionized oxygen vacancies and free carriers. Moreover, the contributions of ionized oxygen vacancies and acceptor-like states are separated by using the mid-gap method. In addition, ionized oxygen vacancies are partially recombined at room temperature and fully recombined at high temperature. Finally, low-frequency noise is measured before and after negative bias illumination stress. Experimental results show few variations of the oxide trapped charges are generated during stress, which is consistent with the proposed mechanism.

Source of Low Frequency Noise in SiGe HBTs

The performance of low frequency noise(LFN)in SiGe heterojunction bipolar transistors(HBTs)is presented.The experimental results indicate that the performance of LFN in SiGe HBTs agrees with classical LFN theory.Based on classical LFN theory,the source of LFN in SiGe HBTs is confirmed from Hooge modal and McWhorter model simultaneously.Furthermore,according to this results,the base current coefficient α is extracted and the relationship between current noise power spectral density and base current is also shown.

Temperature-Dependent Drain Current Characteristics and Low Frequency Noises in Indium Zinc Oxide Thin Fihn Transistors

The I-V characteristics and low frequency noises for indium zinc oxide thin film transistor are measured between 250 K and 430 K. The experimental results show that drain currents are thermally activated following the Meyer Neldel rule, which can be explained by the multiple-trapping process. Moreover, the field effect electron mobility firstly increases, and then decreases with the increase of temperature, while the threshold voltage decreases with increasing the temperature. The activation energy and the density of localized gap states are extracted. A noticeable increase in the density of localized states is observed at the higher temperatures.

Modeling and Analysis of Low Frequency Noise in Ion-Field-Effect Transistors Sensors

Ions Sensitive Field Effect Transistors (ISFETs) are becoming the platform sensors for important chemical and biomedical applications. However, the accuracy of ISFET output measurement is greatly affected by the presences of low-frequency noise, drift and slow response of the device. This requires more safety in measured results and the tools of analysis. In this paper, we present fundamental limits on the sensitivity of ISFETs micro-sensors, arising from intrinsic and extrinsic noise sources. We developed an algorithm in MATLAB in order to model the frequency analysis of the 1/f noise in ISFET sensor using Hooge theory. We have shown that the 1/f noise of the ISFETs sensors is due to both the electrochemical system (pH solution) and the MOS component (canal size, insulator thickness). The temperature effect on the ISFET noise and the signal conditioning are also performed.

A Simple Approach to Determine Noise Frequency of Boiler Drum Level

This paper proposed a simple approach to determine noise frequency of boiler drum level in order to improve control performance. Based on analysis of uncertainty of drum level, the redundant oscillation component of signal, noise is ascribed to the surface wave of drum water. According to the characteristic of surface wave, a new method was proposed to determine noise’s frequency band. By gradually removing the lowest frequency component of signal, the variance of remained component is calculated and observed. An apparent turning point was found and the corresponding critical frequcncy was determined. With this result a low-pass filter was designed to separate noise component. Finally validation is conducted by comparing the proposed method and conventional ones. Results show the accuracy and simpleness of the proposed method.

Effects of an applied low frequency field on the dynamics of a two-level atom interacting with a single-mode field

The effects of an applied low frequency field on the dynamics of a two-level atom interacting with a single-mode field are investigated. It is shown that the time evolution of the atomic population is mainly controlled by the coupling constants and the frequency of the low frequency field, which leads to a low frequency modulation function for the time evolution of the upper state population. The amplitude of the modulation function becomes larger as the coupling constants increase. The frequency of the modulation function is proportional to the frequency of the low frequency field, and decreases with increasing coupling constant.

Methods of de-noising the low frequency electromagnetic data

The quality of the low frequency electromagnetic data is affected by the spike and the trend noises.Failure in removal of the spikes and the trends reduces the credibility of data explanation.Based on the analyses of the causes and characteristics of these noises,this paper presents the results of a preset statistics stacking method(PSSM)and a piecewise linear fitting method(PLFM)in de-noising the spikes and trends,respectively.The magnitudes of the spikes are either higher or lower than the normal values,which leads to distortion of the useful signal.Comparisons have been performed in removing of the spikes among the average,the statistics and the PSSM methods,and the results indicate that only the PSSM can remove the spikes successfully.On the other hand,the spectrums of the linear and nonlinear trends mainly lie in the low frequency band and can change the calculated resistivity significantly.No influence of the trends is observed when the frequency is higher than a certain threshold value.The PLSM can remove effectively both the linear and nonlinear trends with errors around 1% in the power spectrum.The proposed methods present an effective way for de-noising the spike and the trend noises in the low frequency electromagnetic data,and establish a research basis for de-noising the low frequency noises.

Design of Low-Voltage Low Noise Amplifiers with High Linearity

A CMOS radio frequency low noise amplifier with high linearity and low operation voltage of less than 1.0V is presented.In this circuit,an auxiliary MOSFET in the triode region is used to boost the linearity.Simulation shows that this method can boost the input-referred 3rd-order intercept point with much less power dissipation than that of traditional power/linearity tradeoff solution which pays at least 1dB power for 1dB linearity improvement.It is also shown that the size of the common-gate PMOS transistor needs to be optimized to reduce its loaded input impedance so as not to degrade the linearity due to high voltage gain at its source terminal.The simulation is carried out with TSMC 0.18μm RF CMOS technology and SpectreRF.

Experiments on excitation and data processing of low-frequency vibroseis in permafrost area of the tibetan plateau

Few seismic exploration work was carried out in Tibetan Plateau due to the characteristics of alpine hypoxia and harsh environmental protection needs.Complex near surface geological conditions,especially the signal shielding and static correction of permafrost make the quality of seismic data is not ideal,the signal to noise ratio(SNR)is low,and deep target horizon imaging is difficult.These data cannot provide high quality information for oil and gas geological survey and structural sedimentary research in the area.To solve the issue of seismic exploration in Tibetan Plateau,this test used low frequency vibroseis wide-line and high-density acquisition scheme.In view of the actual situation of the study area,the terrain,the source and the diff erent observation system were simulated,and the processing technique was adopted to improve the quality of seismic data.Low-frequency components with a minimum of 1.5Hz of vibroseis ensure the deep geological target imaging quality in the area,the seismic profi le wave group is clear,and the SNR is relatively high,which can meet the needs of oil and gas exploration.Seismic data can provide the support for the development of oil and gas survey in the Tibet plateau.

Advanced topics on RF amplitude and phase detection for low-level RF systems

Low-level radio frequency(LLRF)systems stabilize the electromagnetic field in the RF cavities used for beam acceleration in particle accelerators.Reliable,accurate,and precise detection of RF amplitude and phase is particularly important to achieve high field stability for pulsed accelerators of free-electron lasers(FEL).The digital LLRF systems employ analog-to-digital converters to sample the frequency down-converted RF signal and use digital demodulation algorithms to calculate the RF amplitude and phase.Different sampling strategies and demodulation algorithms have been developed for these purposes and are introduced in this paper.This article focuses on advanced topics concerning RF detection,including accurate RF transient measurement,wideband RF detection,and RF detection with an asynchronous trigger,local oscillator,or clock.The analysis is based on the SwissFEL measurements,but the algorithms introduced are general for RF signal detection in particle accelerators.

Novel Frame Shift and Integral Technique for Enhancing Low-Light-Level Moving Images

A novel frame shift and integral technique for the enhancement of low light level moving image sequence is introduced. According to the technique, motion parameters of target are measured by algorithm based on difference processing. To obtain spatial relativity, images are shifted according to the motion parameters. As a result, the processing of integral and average can be applied to images that have been shifted. The technique of frame shift and integral that includes the algorithm of motion parameter determination is discussed, experiments with low light level moving image sequences are also described. The experiment results show the effectiveness and the robustness of the parameter determination algorithm, and the improvement in the signal-to-noise ratio （SNR） of low light level moving images.