A backside illuminated mesa-structure In Ga As/In P modified uni-traveling-carrier photodiode（MUTC-PD） with wide bandwidth and high saturation power is fabricated and investigated. The device structure is optimized ...A backside illuminated mesa-structure In Ga As/In P modified uni-traveling-carrier photodiode（MUTC-PD） with wide bandwidth and high saturation power is fabricated and investigated. The device structure is optimized to reduce the capacitance and resistance. For the 22-μm-diameter device, the maximum responsivity at 1.55 μm is 0.5 A/W, and the 3-d B cutoff frequency reaches up to 28 GHz. The output photocurrent at the 1-d B compression point is measured to be 54 m A at 25 GHz, with a corresponding output radio frequency（RF） power of up to 15.5 d Bm. The saturation characteristics of the MUTC-PD are also verified by the electric field simulation, and electric field collapse is found to be the cause of the saturation phenomenon.展开更多
Break junctions are important in generating nanosensors and single molecular devices. The mechanically con- trollable break junction is the most widely used method for a break junction due to its simplicity and stabil...Break junctions are important in generating nanosensors and single molecular devices. The mechanically con- trollable break junction is the most widely used method for a break junction due to its simplicity and stability. However, the bandwidths of traditional devices are limited to about a few hertz. Moreover, when using traditional methods it is hard to allow independent control of more than one junction. Here we propose on-chip thermally controllable break junctions to overcome these challenges. This is verified by using finite element analysis. Adopting microelectromechanical systems produces features of high bandwidth and independent controllability to this new break junction system. The proposed method will have a wide range of applications on on-chip high speed independent controllable and highly integrated single molecule devices.展开更多
An integer-N frequency synthesizer in 0.35μm SiGe BiCMOS is presented. By implementing different building blocks with different types of devices,a high purity frequency synthesizer with excellent spur and phase noise...An integer-N frequency synthesizer in 0.35μm SiGe BiCMOS is presented. By implementing different building blocks with different types of devices,a high purity frequency synthesizer with excellent spur and phase noise performance has been realized. All the building blocks are implemented with differential topology except for the off-chip loop filter. To further reduce the phase noise,bonding wires are used to form the resonator in the LC-VCO. The frequency synthesizer operates from 2.39 to 2.72GHz with output power of about 0dBm. The measured closed-loop phase noise is - 95dBc/Hz at 100kHz offset and - 116dBc/Hz at 1MHz offset from the carrier. The power level of the reference spur is less than - 72dBc. With a 3V power supply, the whole chip including the output buffers consumes 60mA.展开更多
High-performance carbon dots(CDs)allowing the application in high-end display devices are highly desirable and usually limited by the absence of simple and easy synthesis methods.In this work,we exploited an easy-to-i...High-performance carbon dots(CDs)allowing the application in high-end display devices are highly desirable and usually limited by the absence of simple and easy synthesis methods.In this work,we exploited an easy-to-implement strategy for the one-step synthesis of green-emitting CDs(G-CDs)with superb optical properties.The G-CDs were synthesized using m-phenylenediamine(m-PD)as a single precursor,and the reaction reacted at 180℃for 12 h The resultant G-CDs exhibit high-purity and excitationindependent green fluorescence with the photoluminescence(PL)peak located at 516 nm,full width at half maximum(FWHM)of 46 nm,and PL quantum yield(QY)of∼80%under the 470nm excitation light.The G-CDs and corresponding composite film prepared with polyvinyl butyral(G-CDs@PVB)exhibit good PL stability after undergoing long-time storage for one year and 360 h exposure under 460nm blue light.The G-CDs@PVB film was used as color-conversion materials in green-emitting light-emitting diode(LED)application,exhibiting a Commission internationale de l’Eclairage(CIE)chromaticity coordinate of(0.21,0.44).The film was also used in CD-based liquid crystal display(CD-LCD)application,achieving a color gamut value of 85%.This work will offer a working basis for the synthesis of high-performance CDs as well as their application in displays.展开更多
A novel backside-illuminated double-cliff-layer uni-traveling-carrier(DCL-UTC)photodiode with both high responsivity and ultra-broad bandwidth is designed and demonstrated.A thick absorption layer is adopted for high ...A novel backside-illuminated double-cliff-layer uni-traveling-carrier(DCL-UTC)photodiode with both high responsivity and ultra-broad bandwidth is designed and demonstrated.A thick absorption layer is adopted for high responsivity,and a depletion region with double cliff layers is proposed to alleviate the space charge effect and maintain overshoot electron velocity under large photocurrents.In addition,inductive coplanar waveguide electrodes are employed to enhance the frequency response performance.The 6-μm-diameter photodiode exhibits a high responsivity of 0.51 A/W and a large 3-dB bandwidth of 102 GHz.A high RF output power of 2.7 dBm is recorded at 100 GHz.展开更多
目的探讨压缩感知结合层面编码金属伪影校正(compressed sensing-slice-encoding metal artifact correction,CS-SEMAC)技术用于脊柱金属植入物术后MRI的应用价值。材料与方法比较招募的35例脊柱金属植入物术后患者3.0 T MRI矢状位CS-SE...目的探讨压缩感知结合层面编码金属伪影校正(compressed sensing-slice-encoding metal artifact correction,CS-SEMAC)技术用于脊柱金属植入物术后MRI的应用价值。材料与方法比较招募的35例脊柱金属植入物术后患者3.0 T MRI矢状位CS-SEMAC序列、高带宽(high bandwidth,HBW)序列和水脂分离(Dixon)三种序列在金属植入物伪影面积、椎体信噪比(signal-to-noise ratio,SNR)、图像质量、图像清晰度、脂肪抑制效果以及植入物周围解剖结构的可见性方面的差异。结果CS-SEMAC在T1、T2矢状位图像上金属伪影面积分别为(15.45±6.84)、(22.23±9.76)cm^(2),显著低于其他两种序列,差异具有统计学意义(P<0.001);三种序列在T2抑脂矢状面图像上的SNR两两比较显示:HBW序列椎体SNR显著高于其他两种序列,Dixon序列椎体SNR显著低于其他两种序列,CS-SEMAC序列椎体SNR低于HBW序列,高于Dixon序列,差异均有统计学意义(P<0.001);在图像清晰度上,T2WI-tirm-CS-SEMAC序列评分低于其他两种序列,差异具有统计学意义(P<0.001);T2WI-tirm-CS-SEMAC序列在图像质量和脂肪抑制效果方面评分显著优于其他两种序列,差异具有统计学意义(P<0.001);并且CS-SEMAC序列相较于其他两种序列更能清晰显示植入物周围椎体、椎弓根、椎间孔及神经根,差异具有统计学意义(P<0.001)。结论CS-SEMAC序列相比于HBW、Dixon序列能够有效减少植入物周围的金属伪影,并且能显著提高T2抑脂序列的图像质量和脂肪抑制效果,虽然在T2抑脂上金属植入物邻近椎体SNR相比HBW序列有所下降,图像比HBW和Dixon图像略模糊,但是椎体周围关键解剖结构的可见度明显提升,对脊柱术后解剖结构的显示有一定优势。展开更多
基金Project supported by the National Basic Research Program of China(Grant Nos.2012CB315605 and 2014CB340002)the National Natural Science Foundation of China(Grant Nos.61176015,61176059,61210014,61321004,and 61307024)the Open Fund of State Key Laboratory on Integrated Optoelectronics,China(Grant Nos.IOSKL2012KF08 and IOSKL2014KF09)
文摘A backside illuminated mesa-structure In Ga As/In P modified uni-traveling-carrier photodiode（MUTC-PD） with wide bandwidth and high saturation power is fabricated and investigated. The device structure is optimized to reduce the capacitance and resistance. For the 22-μm-diameter device, the maximum responsivity at 1.55 μm is 0.5 A/W, and the 3-d B cutoff frequency reaches up to 28 GHz. The output photocurrent at the 1-d B compression point is measured to be 54 m A at 25 GHz, with a corresponding output radio frequency（RF） power of up to 15.5 d Bm. The saturation characteristics of the MUTC-PD are also verified by the electric field simulation, and electric field collapse is found to be the cause of the saturation phenomenon.
基金Supported by the National Key Basic Research Program of China under Grant No 2013CB921800the National Natural Science Foundation of China under Grant Nos 11227901,91021005,11274299,11104262 and 10834005the Strategic Priority Research Program(B)of the Chinese Academy of Sciences under Grant No XDB01030400
文摘Break junctions are important in generating nanosensors and single molecular devices. The mechanically con- trollable break junction is the most widely used method for a break junction due to its simplicity and stability. However, the bandwidths of traditional devices are limited to about a few hertz. Moreover, when using traditional methods it is hard to allow independent control of more than one junction. Here we propose on-chip thermally controllable break junctions to overcome these challenges. This is verified by using finite element analysis. Adopting microelectromechanical systems produces features of high bandwidth and independent controllability to this new break junction system. The proposed method will have a wide range of applications on on-chip high speed independent controllable and highly integrated single molecule devices.
文摘An integer-N frequency synthesizer in 0.35μm SiGe BiCMOS is presented. By implementing different building blocks with different types of devices,a high purity frequency synthesizer with excellent spur and phase noise performance has been realized. All the building blocks are implemented with differential topology except for the off-chip loop filter. To further reduce the phase noise,bonding wires are used to form the resonator in the LC-VCO. The frequency synthesizer operates from 2.39 to 2.72GHz with output power of about 0dBm. The measured closed-loop phase noise is - 95dBc/Hz at 100kHz offset and - 116dBc/Hz at 1MHz offset from the carrier. The power level of the reference spur is less than - 72dBc. With a 3V power supply, the whole chip including the output buffers consumes 60mA.
基金supported by the Jiangsu Funding Program for Excellent Postdoctoral Talent(No.2022ZB369)Priority Academic Program Development of Jiangsu Higher Education Institutions(PAPD).
文摘High-performance carbon dots(CDs)allowing the application in high-end display devices are highly desirable and usually limited by the absence of simple and easy synthesis methods.In this work,we exploited an easy-to-implement strategy for the one-step synthesis of green-emitting CDs(G-CDs)with superb optical properties.The G-CDs were synthesized using m-phenylenediamine(m-PD)as a single precursor,and the reaction reacted at 180℃for 12 h The resultant G-CDs exhibit high-purity and excitationindependent green fluorescence with the photoluminescence(PL)peak located at 516 nm,full width at half maximum(FWHM)of 46 nm,and PL quantum yield(QY)of∼80%under the 470nm excitation light.The G-CDs and corresponding composite film prepared with polyvinyl butyral(G-CDs@PVB)exhibit good PL stability after undergoing long-time storage for one year and 360 h exposure under 460nm blue light.The G-CDs@PVB film was used as color-conversion materials in green-emitting light-emitting diode(LED)application,exhibiting a Commission internationale de l’Eclairage(CIE)chromaticity coordinate of(0.21,0.44).The film was also used in CD-based liquid crystal display(CD-LCD)application,achieving a color gamut value of 85%.This work will offer a working basis for the synthesis of high-performance CDs as well as their application in displays.
基金This work was supported in part by the National Key R&D Program of China(No.2022YFB2803002)National Natural Science Foundation of China(Nos.62235005,62127814,62225405,61975093,61927811,61991443,and 61974080)Collaborative Innovation Center of Solid-State Lighting and Energy-Saving Electronics.
文摘A novel backside-illuminated double-cliff-layer uni-traveling-carrier(DCL-UTC)photodiode with both high responsivity and ultra-broad bandwidth is designed and demonstrated.A thick absorption layer is adopted for high responsivity,and a depletion region with double cliff layers is proposed to alleviate the space charge effect and maintain overshoot electron velocity under large photocurrents.In addition,inductive coplanar waveguide electrodes are employed to enhance the frequency response performance.The 6-μm-diameter photodiode exhibits a high responsivity of 0.51 A/W and a large 3-dB bandwidth of 102 GHz.A high RF output power of 2.7 dBm is recorded at 100 GHz.
文摘目的探讨压缩感知结合层面编码金属伪影校正(compressed sensing-slice-encoding metal artifact correction,CS-SEMAC)技术用于脊柱金属植入物术后MRI的应用价值。材料与方法比较招募的35例脊柱金属植入物术后患者3.0 T MRI矢状位CS-SEMAC序列、高带宽(high bandwidth,HBW)序列和水脂分离(Dixon)三种序列在金属植入物伪影面积、椎体信噪比(signal-to-noise ratio,SNR)、图像质量、图像清晰度、脂肪抑制效果以及植入物周围解剖结构的可见性方面的差异。结果CS-SEMAC在T1、T2矢状位图像上金属伪影面积分别为(15.45±6.84)、(22.23±9.76)cm^(2),显著低于其他两种序列,差异具有统计学意义(P<0.001);三种序列在T2抑脂矢状面图像上的SNR两两比较显示:HBW序列椎体SNR显著高于其他两种序列,Dixon序列椎体SNR显著低于其他两种序列,CS-SEMAC序列椎体SNR低于HBW序列,高于Dixon序列,差异均有统计学意义(P<0.001);在图像清晰度上,T2WI-tirm-CS-SEMAC序列评分低于其他两种序列,差异具有统计学意义(P<0.001);T2WI-tirm-CS-SEMAC序列在图像质量和脂肪抑制效果方面评分显著优于其他两种序列,差异具有统计学意义(P<0.001);并且CS-SEMAC序列相较于其他两种序列更能清晰显示植入物周围椎体、椎弓根、椎间孔及神经根,差异具有统计学意义(P<0.001)。结论CS-SEMAC序列相比于HBW、Dixon序列能够有效减少植入物周围的金属伪影,并且能显著提高T2抑脂序列的图像质量和脂肪抑制效果,虽然在T2抑脂上金属植入物邻近椎体SNR相比HBW序列有所下降,图像比HBW和Dixon图像略模糊,但是椎体周围关键解剖结构的可见度明显提升,对脊柱术后解剖结构的显示有一定优势。
