A design of low-light-level night vision system is described,which can image objects selectively in the specific space. The system can selectively image some objects in specific distances,meanwhile ignore those shelte...A design of low-light-level night vision system is described,which can image objects selectively in the specific space. The system can selectively image some objects in specific distances,meanwhile ignore those shelters on the way of observation by combining an intensifying charge coupled device(ICCD) with a near infrared laser assisted in vision,whose operation wavelength matches with the photocathode of the image tube,and adopting the gated mode and adjustable time-delay. A semiconductor laser diode of 100 W in peak power is chosen for illumination. The laser and the image tube operate in 150 ns pulse width and 2 kHz repeat frequency. Some images of different objects at the different distances within 100 m can be obtained clearly,and even behind a grove by using a sampling circuit and a delay control device at 100 W in peak power of semiconductor laser diode,150 ns in pulse width of laser and image tube,2 kHz in repeat frequency.展开更多
作为全固态微光器件,In x Ga1-x As器件通过调节材料组分x值,其响应波段覆盖夜天光辐射的主要波段,对夜天光的能量利用率高。加之材料量子效率高,器件性能好,可望显著提高夜视系统作战距离;另外,采用半导体常规工艺制作,可完成大面阵、...作为全固态微光器件,In x Ga1-x As器件通过调节材料组分x值,其响应波段覆盖夜天光辐射的主要波段,对夜天光的能量利用率高。加之材料量子效率高,器件性能好,可望显著提高夜视系统作战距离;另外,采用半导体常规工艺制作,可完成大面阵、长线列器件制备,无需封装在(超)高真空系统,制备简单;采用CMOS读出电路进行信号数据的读取、传输与放大,有利于进行数据的处理和优化改善。由于具备的以上技术优势,In x Ga1-x As器件成为一种新型的高性能全固态数字化微光器件。In x Ga1-x As器件与传统的微光器件在光电转换原理以及器件制备方面存在不同,决定了两者在性能上存在的差异。文中对此进行了对比分析,分析结果体现了In x Ga1-x As全固态数字化微光器件的技术优势和特点,以及In x Ga1-x As全固态数字化微光器件存在的重要应用和发展需求。展开更多
文摘A design of low-light-level night vision system is described,which can image objects selectively in the specific space. The system can selectively image some objects in specific distances,meanwhile ignore those shelters on the way of observation by combining an intensifying charge coupled device(ICCD) with a near infrared laser assisted in vision,whose operation wavelength matches with the photocathode of the image tube,and adopting the gated mode and adjustable time-delay. A semiconductor laser diode of 100 W in peak power is chosen for illumination. The laser and the image tube operate in 150 ns pulse width and 2 kHz repeat frequency. Some images of different objects at the different distances within 100 m can be obtained clearly,and even behind a grove by using a sampling circuit and a delay control device at 100 W in peak power of semiconductor laser diode,150 ns in pulse width of laser and image tube,2 kHz in repeat frequency.
文摘作为全固态微光器件,In x Ga1-x As器件通过调节材料组分x值,其响应波段覆盖夜天光辐射的主要波段,对夜天光的能量利用率高。加之材料量子效率高,器件性能好,可望显著提高夜视系统作战距离;另外,采用半导体常规工艺制作,可完成大面阵、长线列器件制备,无需封装在(超)高真空系统,制备简单;采用CMOS读出电路进行信号数据的读取、传输与放大,有利于进行数据的处理和优化改善。由于具备的以上技术优势,In x Ga1-x As器件成为一种新型的高性能全固态数字化微光器件。In x Ga1-x As器件与传统的微光器件在光电转换原理以及器件制备方面存在不同,决定了两者在性能上存在的差异。文中对此进行了对比分析,分析结果体现了In x Ga1-x As全固态数字化微光器件的技术优势和特点,以及In x Ga1-x As全固态数字化微光器件存在的重要应用和发展需求。
