The objective of this paper is to investigate a ultra-wideband (UWB) low noise amplifier (LNA) by utilizing a two-stage cascade circuit schematic associated with inductive-series peaking technique, which can improve t...The objective of this paper is to investigate a ultra-wideband (UWB) low noise amplifier (LNA) by utilizing a two-stage cascade circuit schematic associated with inductive-series peaking technique, which can improve the bandwidth in the 3-10 GHz microwave monolithic integrated circuit (MMIC). The proposed UWB LNA amplifier was implemented with both co-planer waveguide (CPW) layout and 0.15-μm GaAs D-mode pHEMT technology. Based on those technologies, this proposed UWB LNA with a chip size of 1.5 mm x 1.4 mm, obtained a flatness gain 3-dB bandwidth of 4 - 8 GHz, the constant gain of 4 dB, noise figure lower than 5 dB, and the return loss better than –8.5 dB. Based on our experimental results, the low noise amplifier using the inductive-series peaking technique can obtain a wider bandwidth, low power consumption and high flatness of gain in the 3 - 10 GHz. Finally, the overall LNA characterization exhibits ultra-wide bandwidth and low noise characterization, which illustrates that the proposed UWB LNA has a compact size and favorable RF characteristics. This UWB LNA circuit demonstrated the high RF characterization and could provide for the low noise micro-wave circuit applications.展开更多
The design and development of a cryogenic Ultra-Low-Noise Signal Amplification (ULNA) and detection system for spectroscopy of ultra-cold systems are reported here for the operation in the 0.5 - 4 GHz spectrum of freq...The design and development of a cryogenic Ultra-Low-Noise Signal Amplification (ULNA) and detection system for spectroscopy of ultra-cold systems are reported here for the operation in the 0.5 - 4 GHz spectrum of frequencies (the “L” and “S” microwave bands). The design is suitable for weak RF signal detection and spectroscopy from ultra-cold systems confined in cryogenic RF cavities, as entailed in a number of physics, physical chemistry and analytical chemistry applications, such as NMR/NQR/EPR and microwave spectroscopy, Paul traps, Bose-Einstein Condensates (BEC’s) and cavity Quantum Electrodynamics (cQED). Using a generic Low-Noise Amplifier (LNA) architecture for a GaAs enhancement mode High-Electron Mobility FET device, our design has especially been devised for scientific applications where ultra-low-noise amplification systems are sought to amplify and detect weak RF signals under various conditions and environments, including cryogenic temperatures, with the least possible noise susceptibility. The amplifier offers a 16 dB gain and a 0.8 dB noise figure at 2.5 GHz, while operating at room temperature, which can improve significantly at low temperatures. Both dc and RF outputs are provided by the amplifier to integrate it in a closed-loop or continuous-wave spectroscopy system or connect it to a variety of instruments, a factor which is lacking in commercial LNA devices. Following the amplification stage, the RF signal detection is carried out with the help of a post-amplifier and detection system based upon a set of Zero-Bias Schottky Barrier Diodes (ZBD’s) and a high-precision ultra-low noise jFET operational amplifier. The scheme offers unique benefits of sensitive detection and very-low noise amplification for measuring extremely weak on-resonance signals with substantial low- noise response and excellent stability while eliminating complicated and expensive heterodyne schemes. The LNA stage is fully capable to be a part of low-temperature experiments while being operated in cryogenic conditions down to about 500 mK.展开更多
Focusing on the linearity shortcoming on a bipolar low noise amplifier(LNA),a new 6 ~14GHz four stage SiGe HBT LNA is proposed.This amplifier adopts a method of gain allocation on multiple stages to avoid the limitati...Focusing on the linearity shortcoming on a bipolar low noise amplifier(LNA),a new 6 ~14GHz four stage SiGe HBT LNA is proposed.This amplifier adopts a method of gain allocation on multiple stages to avoid the limitation on linearity especially with the addition of negative gain on the third stage.To realize gain flatness,extra zero is introduced to compensate the gain roll-off formed by pole,and local shunt-shunt negative feedback is used to widen the bandwidth as well as optimize circuit' s noise.Simulated results have shown that in 6 ~14GHz,this circuit achieves noise figure(NF) less than 3dB,gain of 17.8dB(+0.2dB),input and output reflection parameters of less than- 10 dB,and the K factor is above 1.15.展开更多
A 0.18 μm CMOS low noise amplifier(LNA) by utilizing noise-canceling technique was designed and implemented in this paper. Current-reuse and self-bias techniques were used in the first stage to achieve input matching...A 0.18 μm CMOS low noise amplifier(LNA) by utilizing noise-canceling technique was designed and implemented in this paper. Current-reuse and self-bias techniques were used in the first stage to achieve input matching and reduce power consumption. The core size of the proposed CMOS LNA circuit without inductor was only 128 μm 9226 μm. The measured power gain and noise figure of the proposed LNA were 20.6 and 1.9 dB,respectively. The 3-dB bandwidth covers frequency from 0.1 to 1.2 GHz. When the chip was operated at a supply voltage of 1.8 V, it consumed 25.69 mW. The high performance of the proposed LNA makes it suitable for multistandard low-cost receiver front-ends within the above frequency range.展开更多
In order to suppress the noise of gyroscopes,the method based on lock-in amplifier and capacitor matching of the low-noise readout circuit is proposed. Firstly,the principle to suppress the noise by lock-in amplifier ...In order to suppress the noise of gyroscopes,the method based on lock-in amplifier and capacitor matching of the low-noise readout circuit is proposed. Firstly,the principle to suppress the noise by lock-in amplifier is analyzed,and the noise model of front end is proposed. Secondly,the noise optimization for the charge amplifier is presented according to the noise model of front end. Finally,a readout circuit is constructed by this approach. The measurement results show that the parasitic capacitance of front end is 18 p F,and the noise at resonant frequency( 4 k Hz) is 133 n V / Hz1 / 2,and the overall bias stability is 30° /h,and the noise level is 0. 003° /( s·Hz1 / 2). The noise of the gyroscope with the low-noise readout by this method is suppressed effectively.展开更多
In this paper, the design of a 9.1 GHz Low Noise Amplifier (LNA) of a RADAR receiver that is used in the Navy is presented. For the design of the LNA, we used GaAs Field-Effect Transistors (FETs) from Agilent ADS comp...In this paper, the design of a 9.1 GHz Low Noise Amplifier (LNA) of a RADAR receiver that is used in the Navy is presented. For the design of the LNA, we used GaAs Field-Effect Transistors (FETs) from Agilent ADS component library. In order to keep the cost of the circuit in low prices and the performance high, we design a two-stage LNA.展开更多
An ultra-wide band (UWB) receiver front-end that operates at the UWB frequency range, starting from 9 GHz - 10.6 GHz is proposed in this paper. The proposed system consists of an off-chip microstrip antenna and CMOS d...An ultra-wide band (UWB) receiver front-end that operates at the UWB frequency range, starting from 9 GHz - 10.6 GHz is proposed in this paper. The proposed system consists of an off-chip microstrip antenna and CMOS differential low noise amplifier with a differential noise canceling (DNC) technique. The proposed antenna is trapezoidal dipole shaped with balun and printed on a low-cost FR4 substrate with dimensions 10 × 10 × 0.8 mm3. The balun circuit integrated with the ground antenna to improve the antenna impedance matching. Noise canceling is obtained by using a differential block with each stage having 2 amplifiers that generate differential signals, subtracted to improve total noise performance. The proposed DNC block improves NF by 50% while increasing total power consumption with only 0.1 Mw. The differential CMOS cascode LNA with DNC block is implemented using UMC 0.13 μm CMOS process, exhibits a flat gain of 19 dB, maximum noise figure of 2.75 dB, 1 dB compression point −16 dBm and 3rd order intercept point (IIP3) −10 dBm. The proposed system has total DC power consumption of 2.8 mW at 1.2 V power supply.展开更多
A compact and reconfigurable low noise amplifier(LNA)is proposed by combining an input transistor,composite transistors with Darlington configuration as the amplification and output transistor,T-type structure composi...A compact and reconfigurable low noise amplifier(LNA)is proposed by combining an input transistor,composite transistors with Darlington configuration as the amplification and output transistor,T-type structure composite resistors instead of a simplex structure resistor,a shunt inductor feedback realized by a tunable active inductor(AI),a shunt inductor peaking technique realized by another tunable AI.The division and collaboration among different resistances in the T-type structure composite resistor realize simultaneously input impedance matching,output impedance matching and good noise performance;the shunt feedback and peaking technique using two tunable AIs not only extend frequency bandwidth and improve gain flatness,but also make the gain and frequency band can be tuned simultaneously by the external bias of tunable AIs;the Darlington configuration of composite transistors provides high gain;furthermore,the adoption of the small size AIs instead of large size passive spiral inductor,and the use of composite resistors make the LNA have a small size.The LNA is fabricated and verified by GaAs/InGaP hetero-junction bipolar transistor(HBT)process.The results show that at the frequency of 7 GHz,the gain S_(21)is maximum and up to 19 dB;the S_(21)can be tuned from 17 dB to 19 dB by tuning external bias of tunable AIs,that is,the tunable amount of S_(21)is 2 dB,and similarly at 8 GHz;the tunable range of 3 dB bandwidth is 1 GHz.In addition,the gain S_(21)flatness is better than 0.4 dB under frequency from 3.1 GHz to 10.6 GHz;the size of the LNA only has 760μm×1260μm(including PADs).Therefore,the proposed strategies in the paper provide a new solution to the design of small size and reconfigurable ultra-wideband(UWB)LNA and can be used further to adjust the variations of gain and bandwidth of radio frequency integrated circuits(RFICs)due to package,parasitic and the variation of fabrication process and temperature.展开更多
A wideband dual-feedback low noise amplifier(LNA) was analyzed, designed and implemented using SiGe heterojunction bipolar transistor(HBT) technology. The design analysis in terms of gain, input and output matching, n...A wideband dual-feedback low noise amplifier(LNA) was analyzed, designed and implemented using SiGe heterojunction bipolar transistor(HBT) technology. The design analysis in terms of gain, input and output matching, noise and poles for the amplifier was presented in detail. The area of the complete chip die, including bonding pads and seal ring, was 655 μm×495 μm. The on-wafer measurements on the fabricated wideband LNA sample demonstrated good performance: a small-signal power gain of 33 dB with 3-dB bandwidth at 3.3 GHz was achieved;the input and output return losses were better than-10 dB from 100 MHz to 4 GHz and to 6 GHz, respectively; the noise figure was lower than 4.25 dB from 100 MHz to 6 GHz; with a 5 V supply, the values of OP1 dB and OIP3 were1.7 dBm and 11 dBm at 3-dB bandwidth, respectively.展开更多
A fully integrated low noise amplifier( LNA) for WLAN 802. 11 ac is presented in this article.A cascode topology combining BJT and MOS transistor is used for better performance. An inductive source degeneration is cho...A fully integrated low noise amplifier( LNA) for WLAN 802. 11 ac is presented in this article.A cascode topology combining BJT and MOS transistor is used for better performance. An inductive source degeneration is chosen to get 50 Ohm impedance matching at the input. The noise contribution of common gate transistor is analyzed for the first time. The designed LNA is verified with IBM silicon-germanium(SiGe ) 0. 13μm BiCMOS process. The measured results show that the designed LNA has the gain of 13 dB and NF of 2. 8 dB at the center frequency of 5. 5 GHz. The input reflection S11 and output reflection S22 are equal to-19 dB and-11 dB respectively. The P-1 dB and IIP3 are-8. 9 dBm and 6. 6 dBm for the linearity performance respectively. The power consumption is only 1. 3 mW under the 1. 2 V supply. LNA achieves high gain,low noise,and high linearity performance,allowing it to be used for the WLAN 802. 11 ac applications.展开更多
An optimum design of a low noise amplifier (LNA) in S-band working at 2-4 GHz is described. Choosing FHC40LG high electronic mobility transistor (HEMT), the noise figure of the designed amplifier simulated by Micr...An optimum design of a low noise amplifier (LNA) in S-band working at 2-4 GHz is described. Choosing FHC40LG high electronic mobility transistor (HEMT), the noise figure of the designed amplifier simulated by Microwave Office is no more than 1.5 dB, meanwhile the gain is no less than 20 dB in the given bandwidth. The simulated results agree with the performance of the transistor itself well in consideration of its own minimum noise figure (0.3 dB) and associated gain (15.5 dB). Simultaneously, the stability factor of the designed amplifier is no less than 1 in the given bandwidth.展开更多
Backscatter communications will play an important role in connecting everything for beyond 5G(B5G)and 6G systems.One open challenge for backscatter communications is that the signals suffer a round-trip path loss so t...Backscatter communications will play an important role in connecting everything for beyond 5G(B5G)and 6G systems.One open challenge for backscatter communications is that the signals suffer a round-trip path loss so that the communication distance is short.In this paper,we first calculate the communication distance upper bounds for both uplink and downlink by measuring the tag sensitivity and reflection coefficient.It is found that the activation voltage of the envelope detection diode of the downlink tag is the main factor limiting the back-scatter communication distance.Based on this analysis,we then propose to implement a low-noise amplifier(LNA)module before the envelope detection at the tag to enhance the incident signal strength.Our experimental results on the hardware platform show that our method can increase the downlink communication range by nearly 20 m.展开更多
文摘The objective of this paper is to investigate a ultra-wideband (UWB) low noise amplifier (LNA) by utilizing a two-stage cascade circuit schematic associated with inductive-series peaking technique, which can improve the bandwidth in the 3-10 GHz microwave monolithic integrated circuit (MMIC). The proposed UWB LNA amplifier was implemented with both co-planer waveguide (CPW) layout and 0.15-μm GaAs D-mode pHEMT technology. Based on those technologies, this proposed UWB LNA with a chip size of 1.5 mm x 1.4 mm, obtained a flatness gain 3-dB bandwidth of 4 - 8 GHz, the constant gain of 4 dB, noise figure lower than 5 dB, and the return loss better than –8.5 dB. Based on our experimental results, the low noise amplifier using the inductive-series peaking technique can obtain a wider bandwidth, low power consumption and high flatness of gain in the 3 - 10 GHz. Finally, the overall LNA characterization exhibits ultra-wide bandwidth and low noise characterization, which illustrates that the proposed UWB LNA has a compact size and favorable RF characteristics. This UWB LNA circuit demonstrated the high RF characterization and could provide for the low noise micro-wave circuit applications.
文摘The design and development of a cryogenic Ultra-Low-Noise Signal Amplification (ULNA) and detection system for spectroscopy of ultra-cold systems are reported here for the operation in the 0.5 - 4 GHz spectrum of frequencies (the “L” and “S” microwave bands). The design is suitable for weak RF signal detection and spectroscopy from ultra-cold systems confined in cryogenic RF cavities, as entailed in a number of physics, physical chemistry and analytical chemistry applications, such as NMR/NQR/EPR and microwave spectroscopy, Paul traps, Bose-Einstein Condensates (BEC’s) and cavity Quantum Electrodynamics (cQED). Using a generic Low-Noise Amplifier (LNA) architecture for a GaAs enhancement mode High-Electron Mobility FET device, our design has especially been devised for scientific applications where ultra-low-noise amplification systems are sought to amplify and detect weak RF signals under various conditions and environments, including cryogenic temperatures, with the least possible noise susceptibility. The amplifier offers a 16 dB gain and a 0.8 dB noise figure at 2.5 GHz, while operating at room temperature, which can improve significantly at low temperatures. Both dc and RF outputs are provided by the amplifier to integrate it in a closed-loop or continuous-wave spectroscopy system or connect it to a variety of instruments, a factor which is lacking in commercial LNA devices. Following the amplification stage, the RF signal detection is carried out with the help of a post-amplifier and detection system based upon a set of Zero-Bias Schottky Barrier Diodes (ZBD’s) and a high-precision ultra-low noise jFET operational amplifier. The scheme offers unique benefits of sensitive detection and very-low noise amplification for measuring extremely weak on-resonance signals with substantial low- noise response and excellent stability while eliminating complicated and expensive heterodyne schemes. The LNA stage is fully capable to be a part of low-temperature experiments while being operated in cryogenic conditions down to about 500 mK.
基金Supported by the National Natural Science Foundation of China(No.61076101,61204092,61306033)
文摘Focusing on the linearity shortcoming on a bipolar low noise amplifier(LNA),a new 6 ~14GHz four stage SiGe HBT LNA is proposed.This amplifier adopts a method of gain allocation on multiple stages to avoid the limitation on linearity especially with the addition of negative gain on the third stage.To realize gain flatness,extra zero is introduced to compensate the gain roll-off formed by pole,and local shunt-shunt negative feedback is used to widen the bandwidth as well as optimize circuit' s noise.Simulated results have shown that in 6 ~14GHz,this circuit achieves noise figure(NF) less than 3dB,gain of 17.8dB(+0.2dB),input and output reflection parameters of less than- 10 dB,and the K factor is above 1.15.
基金supported by the National Science & Technology Major Projects (No. 2012ZX03004008)by the National Natural Science Foundation of China (No. 61376082)by the Tianjin Natural Science Foundation (No. 13JCZDJC25900)
文摘A 0.18 μm CMOS low noise amplifier(LNA) by utilizing noise-canceling technique was designed and implemented in this paper. Current-reuse and self-bias techniques were used in the first stage to achieve input matching and reduce power consumption. The core size of the proposed CMOS LNA circuit without inductor was only 128 μm 9226 μm. The measured power gain and noise figure of the proposed LNA were 20.6 and 1.9 dB,respectively. The 3-dB bandwidth covers frequency from 0.1 to 1.2 GHz. When the chip was operated at a supply voltage of 1.8 V, it consumed 25.69 mW. The high performance of the proposed LNA makes it suitable for multistandard low-cost receiver front-ends within the above frequency range.
文摘In order to suppress the noise of gyroscopes,the method based on lock-in amplifier and capacitor matching of the low-noise readout circuit is proposed. Firstly,the principle to suppress the noise by lock-in amplifier is analyzed,and the noise model of front end is proposed. Secondly,the noise optimization for the charge amplifier is presented according to the noise model of front end. Finally,a readout circuit is constructed by this approach. The measurement results show that the parasitic capacitance of front end is 18 p F,and the noise at resonant frequency( 4 k Hz) is 133 n V / Hz1 / 2,and the overall bias stability is 30° /h,and the noise level is 0. 003° /( s·Hz1 / 2). The noise of the gyroscope with the low-noise readout by this method is suppressed effectively.
文摘In this paper, the design of a 9.1 GHz Low Noise Amplifier (LNA) of a RADAR receiver that is used in the Navy is presented. For the design of the LNA, we used GaAs Field-Effect Transistors (FETs) from Agilent ADS component library. In order to keep the cost of the circuit in low prices and the performance high, we design a two-stage LNA.
文摘An ultra-wide band (UWB) receiver front-end that operates at the UWB frequency range, starting from 9 GHz - 10.6 GHz is proposed in this paper. The proposed system consists of an off-chip microstrip antenna and CMOS differential low noise amplifier with a differential noise canceling (DNC) technique. The proposed antenna is trapezoidal dipole shaped with balun and printed on a low-cost FR4 substrate with dimensions 10 × 10 × 0.8 mm3. The balun circuit integrated with the ground antenna to improve the antenna impedance matching. Noise canceling is obtained by using a differential block with each stage having 2 amplifiers that generate differential signals, subtracted to improve total noise performance. The proposed DNC block improves NF by 50% while increasing total power consumption with only 0.1 Mw. The differential CMOS cascode LNA with DNC block is implemented using UMC 0.13 μm CMOS process, exhibits a flat gain of 19 dB, maximum noise figure of 2.75 dB, 1 dB compression point −16 dBm and 3rd order intercept point (IIP3) −10 dBm. The proposed system has total DC power consumption of 2.8 mW at 1.2 V power supply.
基金Supported by the National Natural Science Foundation of China(No.61774012,61574010)。
文摘A compact and reconfigurable low noise amplifier(LNA)is proposed by combining an input transistor,composite transistors with Darlington configuration as the amplification and output transistor,T-type structure composite resistors instead of a simplex structure resistor,a shunt inductor feedback realized by a tunable active inductor(AI),a shunt inductor peaking technique realized by another tunable AI.The division and collaboration among different resistances in the T-type structure composite resistor realize simultaneously input impedance matching,output impedance matching and good noise performance;the shunt feedback and peaking technique using two tunable AIs not only extend frequency bandwidth and improve gain flatness,but also make the gain and frequency band can be tuned simultaneously by the external bias of tunable AIs;the Darlington configuration of composite transistors provides high gain;furthermore,the adoption of the small size AIs instead of large size passive spiral inductor,and the use of composite resistors make the LNA have a small size.The LNA is fabricated and verified by GaAs/InGaP hetero-junction bipolar transistor(HBT)process.The results show that at the frequency of 7 GHz,the gain S_(21)is maximum and up to 19 dB;the S_(21)can be tuned from 17 dB to 19 dB by tuning external bias of tunable AIs,that is,the tunable amount of S_(21)is 2 dB,and similarly at 8 GHz;the tunable range of 3 dB bandwidth is 1 GHz.In addition,the gain S_(21)flatness is better than 0.4 dB under frequency from 3.1 GHz to 10.6 GHz;the size of the LNA only has 760μm×1260μm(including PADs).Therefore,the proposed strategies in the paper provide a new solution to the design of small size and reconfigurable ultra-wideband(UWB)LNA and can be used further to adjust the variations of gain and bandwidth of radio frequency integrated circuits(RFICs)due to package,parasitic and the variation of fabrication process and temperature.
基金Supported by the National Science and Technology Major Project of the Ministry of Science and Technology of China(No.2009ZX02303-003)
文摘A wideband dual-feedback low noise amplifier(LNA) was analyzed, designed and implemented using SiGe heterojunction bipolar transistor(HBT) technology. The design analysis in terms of gain, input and output matching, noise and poles for the amplifier was presented in detail. The area of the complete chip die, including bonding pads and seal ring, was 655 μm×495 μm. The on-wafer measurements on the fabricated wideband LNA sample demonstrated good performance: a small-signal power gain of 33 dB with 3-dB bandwidth at 3.3 GHz was achieved;the input and output return losses were better than-10 dB from 100 MHz to 4 GHz and to 6 GHz, respectively; the noise figure was lower than 4.25 dB from 100 MHz to 6 GHz; with a 5 V supply, the values of OP1 dB and OIP3 were1.7 dBm and 11 dBm at 3-dB bandwidth, respectively.
基金Supported by the National Natural Science Foundation of China(No.61534003)
文摘A fully integrated low noise amplifier( LNA) for WLAN 802. 11 ac is presented in this article.A cascode topology combining BJT and MOS transistor is used for better performance. An inductive source degeneration is chosen to get 50 Ohm impedance matching at the input. The noise contribution of common gate transistor is analyzed for the first time. The designed LNA is verified with IBM silicon-germanium(SiGe ) 0. 13μm BiCMOS process. The measured results show that the designed LNA has the gain of 13 dB and NF of 2. 8 dB at the center frequency of 5. 5 GHz. The input reflection S11 and output reflection S22 are equal to-19 dB and-11 dB respectively. The P-1 dB and IIP3 are-8. 9 dBm and 6. 6 dBm for the linearity performance respectively. The power consumption is only 1. 3 mW under the 1. 2 V supply. LNA achieves high gain,low noise,and high linearity performance,allowing it to be used for the WLAN 802. 11 ac applications.
基金This work was supported by the National Natural Science Foundation of China under Grant No.60401006the Vacuum Electronics National Laboratory under Grant No. NKLC001-053.
文摘An optimum design of a low noise amplifier (LNA) in S-band working at 2-4 GHz is described. Choosing FHC40LG high electronic mobility transistor (HEMT), the noise figure of the designed amplifier simulated by Microwave Office is no more than 1.5 dB, meanwhile the gain is no less than 20 dB in the given bandwidth. The simulated results agree with the performance of the transistor itself well in consideration of its own minimum noise figure (0.3 dB) and associated gain (15.5 dB). Simultaneously, the stability factor of the designed amplifier is no less than 1 in the given bandwidth.
基金supported in part by National Natural Science Foundation of China under Grant Nos.61971029 and U22B2004in part by Beijing Municipal Natural Science Foundation under Grant No.L222002.
文摘Backscatter communications will play an important role in connecting everything for beyond 5G(B5G)and 6G systems.One open challenge for backscatter communications is that the signals suffer a round-trip path loss so that the communication distance is short.In this paper,we first calculate the communication distance upper bounds for both uplink and downlink by measuring the tag sensitivity and reflection coefficient.It is found that the activation voltage of the envelope detection diode of the downlink tag is the main factor limiting the back-scatter communication distance.Based on this analysis,we then propose to implement a low-noise amplifier(LNA)module before the envelope detection at the tag to enhance the incident signal strength.Our experimental results on the hardware platform show that our method can increase the downlink communication range by nearly 20 m.