With the increasing emphasis on energy conservation,emission reduction and environmental protection,the application prospect of SiC power devices is becoming more and more broad.In the high frequency application of Si...With the increasing emphasis on energy conservation,emission reduction and environmental protection,the application prospect of SiC power devices is becoming more and more broad.In the high frequency application of SiC MOSFET,the change rate of voltage and current in the turn-on and turn-off process increases with the increase of switching frequency.Also,the current and voltage spike oscillation phenomenon is gradually intensified due to the influence of circuit stray parameters.Based on the analysis of SiC MOSFET characteristics,the paper discusses the design requirements and design principles of SiC MOSFET drive circuit.Then,taking the SiC module C2M0080120D of Cree Company as an example,a driver circuit design is realized through the ACPL-355JC optocoupler driver module of Broadcom Company.The circuit not only has the characteristics of fast transmission delay and excellent performance,but also has the functions of overload and short circuit protection.The driving circuit is verified by LTspice simulation software,and the switching characteristics of SiC MOSFET under different working conditions are studied in depth.The experimental results show that the driving circuit can improve the switching time of SiC MOSFET and effectively solve the problem of current and voltage spike oscillation,which lays a foundation for the practical application of SiC MOSFET in the future.展开更多
基金the phased achievements of the postgraduate practice innovation project(SJCX22_1479)in Jiangsu Province.
文摘With the increasing emphasis on energy conservation,emission reduction and environmental protection,the application prospect of SiC power devices is becoming more and more broad.In the high frequency application of SiC MOSFET,the change rate of voltage and current in the turn-on and turn-off process increases with the increase of switching frequency.Also,the current and voltage spike oscillation phenomenon is gradually intensified due to the influence of circuit stray parameters.Based on the analysis of SiC MOSFET characteristics,the paper discusses the design requirements and design principles of SiC MOSFET drive circuit.Then,taking the SiC module C2M0080120D of Cree Company as an example,a driver circuit design is realized through the ACPL-355JC optocoupler driver module of Broadcom Company.The circuit not only has the characteristics of fast transmission delay and excellent performance,but also has the functions of overload and short circuit protection.The driving circuit is verified by LTspice simulation software,and the switching characteristics of SiC MOSFET under different working conditions are studied in depth.The experimental results show that the driving circuit can improve the switching time of SiC MOSFET and effectively solve the problem of current and voltage spike oscillation,which lays a foundation for the practical application of SiC MOSFET in the future.
