CUIn1-xGaxSe2 （CIGS） films were prepared by a two-stage method, in which Cu-In-Ga metallic precursors were firstly deposited on unheated Mo-coated soda lime glass substrates by direct current sputtering CuGa （20%Ga...CUIn1-xGaxSe2 （CIGS） films were prepared by a two-stage method, in which Cu-In-Ga metallic precursors were firstly deposited on unheated Mo-coated soda lime glass substrates by direct current sputtering CuGa （20%Ga） and radio frequency sputtering In targets in an Ar atmosphere, followed by selenization at 520 ℃ for 40 min in Se vapor. By adjusting the sputtering thickness ratio of surface CuGa （20%Ga） and bottom CuGa （20%Ga） alloy layers in metal precursor, different CIGS thin films were fabricated. Through X-ray diffraction spectra, Raman spectra, local energy dispersive spectrometer, planar- and cross- sectional views of scanning electron microscopy measurements, it revealed that the CIGS thin films from selenization of metal precursor with CuGa：In：CuGa thickness ratio of 7：20：3 （sample-2-se） was of chalcopyrite structure with the preferred （112） orientation, and the grains sizes ranged from 0.5 μm to 2 μm, and sample-2-se had no binary compound phase of In-Se and order defect compound phase. Consequently, the results of illuminated current- voltage curve and quantum efficiency measurements showed that the CIGS film device made from sample-2-se had relative higher photo-electric conversion efficiency （3.59%） and good spectrum response.展开更多
Three electrodeposited Fe-Ni,Fe-Co,and Fe-Ni-Co cores of thin film transformer are prepared on silicon(100) substrates,which are sputtered a 90 nm thick film of Cu acting as the seed layer.The core films consisting of...Three electrodeposited Fe-Ni,Fe-Co,and Fe-Ni-Co cores of thin film transformer are prepared on silicon(100) substrates,which are sputtered a 90 nm thick film of Cu acting as the seed layer.The core films consisting of Fe-Ni 20:80,Fe-Co 60:40 and Fe-Ni-Co 10:60:30,respectively,are deposited using direct current electrodeposition.The surface texture,electrical and magnetic properties are surveyed by scanning electron microscopy(SEM),superconducting quantum interference device(SQUID),etc.The wave transmission ability and efficiency of thin film transformer with these cores,inputting the sine wave,are compared.All the analyses indicate that FeNi alloy films display the optimal magnetic properties and excellent transformer performance.展开更多
The microstructure and magnetic properties of Mn-doped ZnO films with various Mn contents,synthesized by magnetron sputtering at room temperature,are investigated in detail.X-ray diffraction(XRD) measurement results s...The microstructure and magnetic properties of Mn-doped ZnO films with various Mn contents,synthesized by magnetron sputtering at room temperature,are investigated in detail.X-ray diffraction(XRD) measurement results suggest that the doped Mn ions occupy the Zn sites successfully and do not change the crystal structure of the ZnO films.However,the microstructure of the Mn-doped ZnO films apparently changes with increasing the Mn concentration.Arrays of well-aligned nanoscale rods are found in the Mn-doped ZnO films with moderate Mn concentrations.Magnetic measurement results indicate that the ZnO films doped with moderate Mn concentration are ferromagnetic at room temperature.The possible origin of the ferromagnetism in our samples is also explored in detail.展开更多
The epitaxial Mno0.98Cr0.02Te films on single crystal Al2O3 （0001） substrates were prepared by pulsed laser deposition. The X-ray diffraction and scanning electron microscopy results showed that the good continuous ...The epitaxial Mno0.98Cr0.02Te films on single crystal Al2O3 （0001） substrates were prepared by pulsed laser deposition. The X-ray diffraction and scanning electron microscopy results showed that the good continuous epitaxial film was obtained with substrate temperature of 500 ℃. When the substrate temperature reached 700 ℃, the film was island growth and the manganese oxides phase appeared. The temperature dependence of both the magnetization and electrical resistance showed a sharp rise at around 60 K due to the magnetoelastic coupling. The temperature dependence of the electrical resistance of Mno0.98Cr0.02Te provided evidence for a transition from the metallic to semiconducting state at 305 K due to the spin disorder scattering with a large contribution from the influence of magnon drag.展开更多
文摘CUIn1-xGaxSe2 （CIGS） films were prepared by a two-stage method, in which Cu-In-Ga metallic precursors were firstly deposited on unheated Mo-coated soda lime glass substrates by direct current sputtering CuGa （20%Ga） and radio frequency sputtering In targets in an Ar atmosphere, followed by selenization at 520 ℃ for 40 min in Se vapor. By adjusting the sputtering thickness ratio of surface CuGa （20%Ga） and bottom CuGa （20%Ga） alloy layers in metal precursor, different CIGS thin films were fabricated. Through X-ray diffraction spectra, Raman spectra, local energy dispersive spectrometer, planar- and cross- sectional views of scanning electron microscopy measurements, it revealed that the CIGS thin films from selenization of metal precursor with CuGa：In：CuGa thickness ratio of 7：20：3 （sample-2-se） was of chalcopyrite structure with the preferred （112） orientation, and the grains sizes ranged from 0.5 μm to 2 μm, and sample-2-se had no binary compound phase of In-Se and order defect compound phase. Consequently, the results of illuminated current- voltage curve and quantum efficiency measurements showed that the CIGS film device made from sample-2-se had relative higher photo-electric conversion efficiency （3.59%） and good spectrum response.
基金supported by the National Natural Science Foundation of China (Grant No. 60874101)
文摘Three electrodeposited Fe-Ni,Fe-Co,and Fe-Ni-Co cores of thin film transformer are prepared on silicon(100) substrates,which are sputtered a 90 nm thick film of Cu acting as the seed layer.The core films consisting of Fe-Ni 20:80,Fe-Co 60:40 and Fe-Ni-Co 10:60:30,respectively,are deposited using direct current electrodeposition.The surface texture,electrical and magnetic properties are surveyed by scanning electron microscopy(SEM),superconducting quantum interference device(SQUID),etc.The wave transmission ability and efficiency of thin film transformer with these cores,inputting the sine wave,are compared.All the analyses indicate that FeNi alloy films display the optimal magnetic properties and excellent transformer performance.
基金supported by the National Natural Science Foundation of China(Nos.11204266 and 21276220)the Nature Science Foundation of Jiangsu Province(No.BK20141262)
文摘The microstructure and magnetic properties of Mn-doped ZnO films with various Mn contents,synthesized by magnetron sputtering at room temperature,are investigated in detail.X-ray diffraction(XRD) measurement results suggest that the doped Mn ions occupy the Zn sites successfully and do not change the crystal structure of the ZnO films.However,the microstructure of the Mn-doped ZnO films apparently changes with increasing the Mn concentration.Arrays of well-aligned nanoscale rods are found in the Mn-doped ZnO films with moderate Mn concentrations.Magnetic measurement results indicate that the ZnO films doped with moderate Mn concentration are ferromagnetic at room temperature.The possible origin of the ferromagnetism in our samples is also explored in detail.
基金supported by the National Natural Science Foundation of China(No.50902128)Project of Shenyang Natural Science and Technology Support Program(No.F10205154)Project of Jilin Provincial Natural Science Foundation(No.20101534)
文摘The epitaxial Mno0.98Cr0.02Te films on single crystal Al2O3 （0001） substrates were prepared by pulsed laser deposition. The X-ray diffraction and scanning electron microscopy results showed that the good continuous epitaxial film was obtained with substrate temperature of 500 ℃. When the substrate temperature reached 700 ℃, the film was island growth and the manganese oxides phase appeared. The temperature dependence of both the magnetization and electrical resistance showed a sharp rise at around 60 K due to the magnetoelastic coupling. The temperature dependence of the electrical resistance of Mno0.98Cr0.02Te provided evidence for a transition from the metallic to semiconducting state at 305 K due to the spin disorder scattering with a large contribution from the influence of magnon drag.
