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Supplementary Material: Stepping Stone Mechanism: Carrier-Free Long-Range Magnetism Mediated by Magnetized Cation States in Quintuple Layer
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作者 陈俊佳 张小东 +4 位作者 张异欧 谢建辉 邓贝 张璟昭 朱骏宜 《Chinese Physics Letters》 SCIE CAS CSCD 2018年第1期99-103,共5页
The long-range magnetism observed in group-V tellurides quintuple layers is the only working example of carrierfree dilute magnetic semiconductors(DMS), whereas the physical mechanism is unclear, except the speculat... The long-range magnetism observed in group-V tellurides quintuple layers is the only working example of carrierfree dilute magnetic semiconductors(DMS), whereas the physical mechanism is unclear, except the speculation on the band topology enhanced van Vleck paramagnetism. Based on DFT calculations, we find a stable longrange ferromagnetic order in a single quintuple layer of Cr-doped Bi_2Te_3 or Sb_2Te_3, with the dopant separation more than 9 ?. This configuration is the global energy minimum among all configurations. Different from the conventional super exchange theory, the magnetism is facilitated by the lone pair derived anti-bonding states near the cations. Such anti-bonding states work as stepping stones merged in the electron sea and conduct magnetism.Further, spin orbit coupling induced band inversion is found to be insignificant in the magnetism. Therefore, our findings directly dismiss the common misbelief that band topology is the only factor that enhances the magnetism.We further demonstrate that removal of the lone pair derived states destroys the long-range magnetism. This novel mechanism sheds light on the fundamental understanding of long-range magnetism and may lead to discoveries of new classes of DMS. 展开更多
关键词 Te Bi DMS Stepping stone Mechanism Carrier-Free Long-Range Magnetism Mediated by Magnetized Cation States in Quintuple Layer Cr
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