In this paper, the design and analysis of a new low noise charge sensitive preamplifier for silicon strip, Si(Li), CdZnTe and CsI detectors etc. with switch control feedback resistance were described, the entire syste...In this paper, the design and analysis of a new low noise charge sensitive preamplifier for silicon strip, Si(Li), CdZnTe and CsI detectors etc. with switch control feedback resistance were described, the entire system to be built using the CMOS transistors. The circuit configuration of the CSP proposed in this paper can be adopted to develop CMOS-based Application Specific Integrated Circuit further for Front End Electronics of read-out system of nuclear physics, particle physics and astrophysics research, etc. This work is an implemented design that we succeed after a simulation to obtain a rise time less than 3ns, the output resistance less than 94? and the linearity almost good.展开更多
We introduce a novel switching mechanism that relies on the bistability of a simple nonlinear electrical resonator which incorporates a varactor diode as its capacitive element. The switching action can be made fast a...We introduce a novel switching mechanism that relies on the bistability of a simple nonlinear electrical resonator which incorporates a varactor diode as its capacitive element. The switching action can be made fast and is self-contained in that no further circuitry is necessary. Unlike a flip-flop, whose state is flipped by applying a TTL pulse, this nonlinear switch can be engaged external to the circuit via magnetic, inductive or capacitive coupling;in this way, the switch becomes intrinsically touch-sensitive. Alternatively, the switching action can also be accomplished using frequency-shift-keying (FSK) modulation, which holds the promise of fast manipulation of the memory state. We demonstrate the potential application of these ideas by constructing a touch-sensitive LED lattice.展开更多
An approximate analytical model for calculating the pull-in voltage of a stepped cantilever-type radio frequency （RF） micro electro-mechanical system （MEMS） switch is developed based on the Euler-Bernoulli beam an...An approximate analytical model for calculating the pull-in voltage of a stepped cantilever-type radio frequency （RF） micro electro-mechanical system （MEMS） switch is developed based on the Euler-Bernoulli beam and a modified couple stress theory, and is validated by comparison with the finite element results. The sensitivity functions of the pull-in voltage to the designed parameters are derived based on the proposed model. The sensitivity investigation shows that the pull-in voltage sensitivities increase/decrease nonlinearly with the increases in the designed parameters. For the stepped cantilever beam, there exists a nonzero optimal dimensionless length ratio, where the pull-in voltage is insensitive. The optimal value of the dimensionless length ratio only depends on the dimensionless width ratio, and can be obtained by solving a nonlinear equation. The determination of the designed parameters is discussed, and some recommendations are made for the RF MEMS switch optimization.展开更多
The mechanisms occurring when the switched temperature technique is applied,as an accelerated enhanced low dose rate sensitivity(ELDRS)test technique,are investigated in terms of a specially designed gate-controlled l...The mechanisms occurring when the switched temperature technique is applied,as an accelerated enhanced low dose rate sensitivity(ELDRS)test technique,are investigated in terms of a specially designed gate-controlled lateral PNP transistor(GLPNP)that used to extract the interface traps(Nit)and oxide trapped charges(Not).Electrical characteristics in GLPNP transistors induced by ^(60)Co gamma irradiation are measured in situ as a function of total dose,showing that generation of Nit in the oxide is the primary cause of base current variations for the GLPNP.Based on the analysis of the variations of Nit and Not,with switching the temperature,the properties of accelerated protons release and suppressed protons loss play critical roles in determining the increased Nit formation leading to the base current degradation with dose accumulation.Simultaneously the hydrogen cracking mechanisms responsible for additional protons release are related to the neutralization of Not extending enhanced Nit buildup.In this study the switched temperature irradiation has been employed to conservatively estimate the ELDRS of GLPNP,which provides us with a new insight into the test technique for ELDRS.展开更多
基金Supported in part by the Third World Academy of Sciences, in part by the Institute of Modern Physics, Chinese Academy of Sciencesin part by the National Natural Science Foundation of China (10675153)
文摘In this paper, the design and analysis of a new low noise charge sensitive preamplifier for silicon strip, Si(Li), CdZnTe and CsI detectors etc. with switch control feedback resistance were described, the entire system to be built using the CMOS transistors. The circuit configuration of the CSP proposed in this paper can be adopted to develop CMOS-based Application Specific Integrated Circuit further for Front End Electronics of read-out system of nuclear physics, particle physics and astrophysics research, etc. This work is an implemented design that we succeed after a simulation to obtain a rise time less than 3ns, the output resistance less than 94? and the linearity almost good.
文摘We introduce a novel switching mechanism that relies on the bistability of a simple nonlinear electrical resonator which incorporates a varactor diode as its capacitive element. The switching action can be made fast and is self-contained in that no further circuitry is necessary. Unlike a flip-flop, whose state is flipped by applying a TTL pulse, this nonlinear switch can be engaged external to the circuit via magnetic, inductive or capacitive coupling;in this way, the switch becomes intrinsically touch-sensitive. Alternatively, the switching action can also be accomplished using frequency-shift-keying (FSK) modulation, which holds the promise of fast manipulation of the memory state. We demonstrate the potential application of these ideas by constructing a touch-sensitive LED lattice.
基金supported by the National Natural Science Foundation of China(Nos.51505089 and61204116)the Opening Project of the Science and Technology on Reliability Physics and Application Technology of Electronic Component Laboratory(Nos.ZHD201207 and 9140C030605140C03015)the Pearl River S&T Nova Program of Guangzhou(No.2014J2200086)
文摘An approximate analytical model for calculating the pull-in voltage of a stepped cantilever-type radio frequency （RF） micro electro-mechanical system （MEMS） switch is developed based on the Euler-Bernoulli beam and a modified couple stress theory, and is validated by comparison with the finite element results. The sensitivity functions of the pull-in voltage to the designed parameters are derived based on the proposed model. The sensitivity investigation shows that the pull-in voltage sensitivities increase/decrease nonlinearly with the increases in the designed parameters. For the stepped cantilever beam, there exists a nonzero optimal dimensionless length ratio, where the pull-in voltage is insensitive. The optimal value of the dimensionless length ratio only depends on the dimensionless width ratio, and can be obtained by solving a nonlinear equation. The determination of the designed parameters is discussed, and some recommendations are made for the RF MEMS switch optimization.
基金Project supported by the National Natural Science Foundation of China(Grant Nos.U1532261 and 1630141)
文摘The mechanisms occurring when the switched temperature technique is applied,as an accelerated enhanced low dose rate sensitivity(ELDRS)test technique,are investigated in terms of a specially designed gate-controlled lateral PNP transistor(GLPNP)that used to extract the interface traps(Nit)and oxide trapped charges(Not).Electrical characteristics in GLPNP transistors induced by ^(60)Co gamma irradiation are measured in situ as a function of total dose,showing that generation of Nit in the oxide is the primary cause of base current variations for the GLPNP.Based on the analysis of the variations of Nit and Not,with switching the temperature,the properties of accelerated protons release and suppressed protons loss play critical roles in determining the increased Nit formation leading to the base current degradation with dose accumulation.Simultaneously the hydrogen cracking mechanisms responsible for additional protons release are related to the neutralization of Not extending enhanced Nit buildup.In this study the switched temperature irradiation has been employed to conservatively estimate the ELDRS of GLPNP,which provides us with a new insight into the test technique for ELDRS.
