Detailed mathematical modelling approaches that are used to describe the dynamic behaviour of magnetoelectric coupling in magnetostrictive-piezoelectric multiferroics at low-frequencies, in electromechanical resonance...Detailed mathematical modelling approaches that are used to describe the dynamic behaviour of magnetoelectric coupling in magnetostrictive-piezoelectric multiferroics at low-frequencies, in electromechanical resonance region and at microwave range are discussed. The ME （magnetoelectric） voltage coefficients were estimated from the known material parameters. The feasibility for creating new class of functional devices based on magnetoelectric interactions is addressed.展开更多
Magnetoelectric(ME)composites have recently attracted an ever-increasing interest and provoked a great number of research activities,driven by the potential applications in novel multifunctional devices,such as sensor...Magnetoelectric(ME)composites have recently attracted an ever-increasing interest and provoked a great number of research activities,driven by the potential applications in novel multifunctional devices,such as sensors and transducers[1].Direct ME effect,which describe the appearance of an electric polarization P upon applying a magnetic field H,is usually evaluated by the展开更多
The fabrication and properties of a novel double layered surface-mount magnetoelectric（ME） device are investigated and reported. This ME device is made up of two opposite polarized piezoelectric PZT slices bonded on...The fabrication and properties of a novel double layered surface-mount magnetoelectric（ME） device are investigated and reported. This ME device is made up of two opposite polarized piezoelectric PZT slices bonded on the same side of a magnetostrictive material Metglas, forming a novel two PZT in-series device. ME voltage obtained from the two PZT in-series is obviously higher than that of single PZT in a magnetic field with certain value. The ME voltage coefficient（αV） of the surface-mount ME device is significantly enhanced by adjusting the thickness of Metglas： 1） At a frequency of 1 k Hz, αV of this device increases with the layer number of Metglas increased, and the maximum value of αV is about 4.25 times than the minimum; 2） At a frequency of 5 k Hz, the maximum value of αV is 458 mV /Oe, which derives from the ME device with three layers Metglas. This novel design provides an effective way to manufacture miniature and high sensitive ME devices, which makes it possible to apply ME device into integrated circuit（IC）.展开更多
文摘Detailed mathematical modelling approaches that are used to describe the dynamic behaviour of magnetoelectric coupling in magnetostrictive-piezoelectric multiferroics at low-frequencies, in electromechanical resonance region and at microwave range are discussed. The ME （magnetoelectric） voltage coefficients were estimated from the known material parameters. The feasibility for creating new class of functional devices based on magnetoelectric interactions is addressed.
基金supported by the National Natural Science Foundation of China (51402164)
文摘Magnetoelectric(ME)composites have recently attracted an ever-increasing interest and provoked a great number of research activities,driven by the potential applications in novel multifunctional devices,such as sensors and transducers[1].Direct ME effect,which describe the appearance of an electric polarization P upon applying a magnetic field H,is usually evaluated by the
基金Supported by the National Natural Science Foundation of China(51372174,51132001,11364018 and J1210061)the Natural Science Foundation of Hubei Province(2014CFB610)the Excellent Young Innovation Team Project of Hubei Province(T201429)
文摘The fabrication and properties of a novel double layered surface-mount magnetoelectric（ME） device are investigated and reported. This ME device is made up of two opposite polarized piezoelectric PZT slices bonded on the same side of a magnetostrictive material Metglas, forming a novel two PZT in-series device. ME voltage obtained from the two PZT in-series is obviously higher than that of single PZT in a magnetic field with certain value. The ME voltage coefficient（αV） of the surface-mount ME device is significantly enhanced by adjusting the thickness of Metglas： 1） At a frequency of 1 k Hz, αV of this device increases with the layer number of Metglas increased, and the maximum value of αV is about 4.25 times than the minimum; 2） At a frequency of 5 k Hz, the maximum value of αV is 458 mV /Oe, which derives from the ME device with three layers Metglas. This novel design provides an effective way to manufacture miniature and high sensitive ME devices, which makes it possible to apply ME device into integrated circuit（IC）.
