利用射频磁控溅射法在Pt(200)/TiO_2/SiO_2/Si衬底上沉积CoFe_2O_4/Ba_(0.8)Sr_(0.2)TiO_3异质结层状磁电复合薄膜(Ba_(0.8)Sr_(0.2)TiO_3作为底层,CoFe_2O_4作为顶层)。X射线衍射表明CoFe_2O_4/Ba_(0.8)Sr_(0.2)TiO_3异质结复合薄膜是...利用射频磁控溅射法在Pt(200)/TiO_2/SiO_2/Si衬底上沉积CoFe_2O_4/Ba_(0.8)Sr_(0.2)TiO_3异质结层状磁电复合薄膜(Ba_(0.8)Sr_(0.2)TiO_3作为底层,CoFe_2O_4作为顶层)。X射线衍射表明CoFe_2O_4/Ba_(0.8)Sr_(0.2)TiO_3异质结复合薄膜是多晶的,由钙钛矿Ba_(0.8)Sr_(0.2)TiO_3相和尖晶石Co Fe2O4相组成。场发射扫描电镜表明在CoFe_2O_4薄膜和Ba_(0.8)Sr_(0.2)TiO_3薄膜之间有明显的界面。复合薄膜的介电常数随频率的变化关系显示了介电色散。复合薄膜表现为良好的铁电性和铁磁性共存。另外,复合薄膜具有直接的磁电耦合效应,磁电电压系数αE先随着偏置磁场Hdc的增大而增大,当偏置磁场Hdc增加到5.6 k Oe,复合薄膜达到最大的磁电电压系数,其值αE=8.7 m V/(cm·Oe),然后随着偏置磁场Hdc的进一步增大,磁电电压系数αE反而减小。展开更多
通过脉冲激光沉积法(PLD)在(001)-SrRuO_3/SrTiO_3(SRO/STO)衬底上生长了CoFe_2O_4/Ba_(0.9)Ca_(0.1)Ti_(0.9)Zr_(0.1)O_3(CFO/BCZT)双层磁电复合薄膜。采用X射线衍射仪(XRD)、原子力显微镜(AFM)和扫描电子显微镜(SEM)测试样品的晶体结...通过脉冲激光沉积法(PLD)在(001)-SrRuO_3/SrTiO_3(SRO/STO)衬底上生长了CoFe_2O_4/Ba_(0.9)Ca_(0.1)Ti_(0.9)Zr_(0.1)O_3(CFO/BCZT)双层磁电复合薄膜。采用X射线衍射仪(XRD)、原子力显微镜(AFM)和扫描电子显微镜(SEM)测试样品的晶体结构及形貌。XRD结果显示:单相BCZT铁电薄膜、CFO铁磁薄膜及CFO/BCZT磁电复合薄膜均为(00l)择优取向结构。物理性能测试结果表明:CFO/BCZT复合薄膜具有良好的铁电性能(剩余极化值,Pr=15. 1μC/cm^2)、铁磁性能和磁电耦合性能(磁电耦合系数,αE～82. 4 m V·cm^(-1)·Oe^(-1))。这种无铅的磁电复合薄膜为设计新型多铁电子器件提供了一种选择。展开更多
Magnetic tunnel junctions with ferroelectric barriers, often referred to as multiferroic tunnel junc- tions, have been proposed recently to display new functionalities and new device concepts. One of the notable predi...Magnetic tunnel junctions with ferroelectric barriers, often referred to as multiferroic tunnel junc- tions, have been proposed recently to display new functionalities and new device concepts. One of the notable predictions is that the combination of two charge polarizing states and the parallel and antiparallel magnetic states could make it a four resistance state device. We have recently studied the ferroelectric tunneling using a scanning probe technique and multiferroic tunnel junctions using ferromagnetic Lao.7Cao.3MnO3 and Lao.TSro.3MnO3 as the electrodes and ferroelectric （Ba, Sr）TiO3 as the barrier in trilayer planner junctions. We show that very thin （Ba, Sr）TiO3 films can sustain ferroelectricity up till room temperature. The multiferroic tunnel junctions show four resistance states as predicted and can operate at room temperatures.展开更多
文摘利用射频磁控溅射法在Pt(200)/TiO_2/SiO_2/Si衬底上沉积CoFe_2O_4/Ba_(0.8)Sr_(0.2)TiO_3异质结层状磁电复合薄膜(Ba_(0.8)Sr_(0.2)TiO_3作为底层,CoFe_2O_4作为顶层)。X射线衍射表明CoFe_2O_4/Ba_(0.8)Sr_(0.2)TiO_3异质结复合薄膜是多晶的,由钙钛矿Ba_(0.8)Sr_(0.2)TiO_3相和尖晶石Co Fe2O4相组成。场发射扫描电镜表明在CoFe_2O_4薄膜和Ba_(0.8)Sr_(0.2)TiO_3薄膜之间有明显的界面。复合薄膜的介电常数随频率的变化关系显示了介电色散。复合薄膜表现为良好的铁电性和铁磁性共存。另外,复合薄膜具有直接的磁电耦合效应,磁电电压系数αE先随着偏置磁场Hdc的增大而增大,当偏置磁场Hdc增加到5.6 k Oe,复合薄膜达到最大的磁电电压系数,其值αE=8.7 m V/(cm·Oe),然后随着偏置磁场Hdc的进一步增大,磁电电压系数αE反而减小。
文摘通过脉冲激光沉积法(PLD)在(001)-SrRuO_3/SrTiO_3(SRO/STO)衬底上生长了CoFe_2O_4/Ba_(0.9)Ca_(0.1)Ti_(0.9)Zr_(0.1)O_3(CFO/BCZT)双层磁电复合薄膜。采用X射线衍射仪(XRD)、原子力显微镜(AFM)和扫描电子显微镜(SEM)测试样品的晶体结构及形貌。XRD结果显示:单相BCZT铁电薄膜、CFO铁磁薄膜及CFO/BCZT磁电复合薄膜均为(00l)择优取向结构。物理性能测试结果表明:CFO/BCZT复合薄膜具有良好的铁电性能(剩余极化值,Pr=15. 1μC/cm^2)、铁磁性能和磁电耦合性能(磁电耦合系数,αE～82. 4 m V·cm^(-1)·Oe^(-1))。这种无铅的磁电复合薄膜为设计新型多铁电子器件提供了一种选择。
文摘Magnetic tunnel junctions with ferroelectric barriers, often referred to as multiferroic tunnel junc- tions, have been proposed recently to display new functionalities and new device concepts. One of the notable predictions is that the combination of two charge polarizing states and the parallel and antiparallel magnetic states could make it a four resistance state device. We have recently studied the ferroelectric tunneling using a scanning probe technique and multiferroic tunnel junctions using ferromagnetic Lao.7Cao.3MnO3 and Lao.TSro.3MnO3 as the electrodes and ferroelectric （Ba, Sr）TiO3 as the barrier in trilayer planner junctions. We show that very thin （Ba, Sr）TiO3 films can sustain ferroelectricity up till room temperature. The multiferroic tunnel junctions show four resistance states as predicted and can operate at room temperatures.
