The theory of direct magnetoelectric(ME)effect in a bilayer of ferromagnetic and piezoelectric is developed taking into account nonuniform distribution of electrical field on a piezoelectric layer thickness.The simult...The theory of direct magnetoelectric(ME)effect in a bilayer of ferromagnetic and piezoelectric is developed taking into account nonuniform distribution of electrical field on a piezoelectric layer thickness.The simultaneous solution of the motion equations for piezoelectric and ferromagnetic mediums allowed to numerically and analytically calculate the dependence of natural mechanical oscillation on structure parameters and to determine the dependence of ME effect coefficient on frequency of the variable magnetic field.展开更多
The fabrication and properties of a novel double layered surface-mount magnetoelectric（ME） device are investigated and reported. This ME device is made up of two opposite polarized piezoelectric PZT slices bonded on...The fabrication and properties of a novel double layered surface-mount magnetoelectric（ME） device are investigated and reported. This ME device is made up of two opposite polarized piezoelectric PZT slices bonded on the same side of a magnetostrictive material Metglas, forming a novel two PZT in-series device. ME voltage obtained from the two PZT in-series is obviously higher than that of single PZT in a magnetic field with certain value. The ME voltage coefficient（αV） of the surface-mount ME device is significantly enhanced by adjusting the thickness of Metglas： 1） At a frequency of 1 k Hz, αV of this device increases with the layer number of Metglas increased, and the maximum value of αV is about 4.25 times than the minimum; 2） At a frequency of 5 k Hz, the maximum value of αV is 458 mV /Oe, which derives from the ME device with three layers Metglas. This novel design provides an effective way to manufacture miniature and high sensitive ME devices, which makes it possible to apply ME device into integrated circuit（IC）.展开更多
文摘The theory of direct magnetoelectric(ME)effect in a bilayer of ferromagnetic and piezoelectric is developed taking into account nonuniform distribution of electrical field on a piezoelectric layer thickness.The simultaneous solution of the motion equations for piezoelectric and ferromagnetic mediums allowed to numerically and analytically calculate the dependence of natural mechanical oscillation on structure parameters and to determine the dependence of ME effect coefficient on frequency of the variable magnetic field.
基金Supported by the National Natural Science Foundation of China(51372174,51132001,11364018 and J1210061)the Natural Science Foundation of Hubei Province(2014CFB610)the Excellent Young Innovation Team Project of Hubei Province(T201429)
文摘The fabrication and properties of a novel double layered surface-mount magnetoelectric（ME） device are investigated and reported. This ME device is made up of two opposite polarized piezoelectric PZT slices bonded on the same side of a magnetostrictive material Metglas, forming a novel two PZT in-series device. ME voltage obtained from the two PZT in-series is obviously higher than that of single PZT in a magnetic field with certain value. The ME voltage coefficient（αV） of the surface-mount ME device is significantly enhanced by adjusting the thickness of Metglas： 1） At a frequency of 1 k Hz, αV of this device increases with the layer number of Metglas increased, and the maximum value of αV is about 4.25 times than the minimum; 2） At a frequency of 5 k Hz, the maximum value of αV is 458 mV /Oe, which derives from the ME device with three layers Metglas. This novel design provides an effective way to manufacture miniature and high sensitive ME devices, which makes it possible to apply ME device into integrated circuit（IC）.
