Anisotropic Magnetoresistivity in Semimetal TaSb_2

We investigate the anisotropic magnetic transports in topological semimetal TaSb2. The compound shows the large magnetoresistance(MR) without saturation and the metal-insulator-like transition no matter whether the magnetic field is parallel to c-axis or a-axis, except that the MR for B‖c is almost twice as large as that of B‖a at low temperatures. The adopted Kohler's rule can be obeyed by the MR at distinct temperatures for B‖c,but it is slightly violated as B‖a. The angle-dependent MR measurements exhibit the two-fold rotational symmetry below70 K,consistent with the monoclinic crystal structure of TaSb2. The dumbbell-like picture of angle-dependent MR in TaSb2 suggests a strongly anisotropic Fermi surface at low temperatures. However, it finally loses the two-fold symmetry over 70 K, implying a possible topological phase transition at around the temperature where Tm is related to a metal-insulator-like transition under magnetic fields.

Anisotropic spin transport and photoresponse characteristics detected by tip movement in magnetic single-molecule junction

Orientation-dependent transport properties induced by anisotropic molecules are enticing in single-molecule junctions.Here,using the first-principles method,we theoretically investigate spin transport properties and photoresponse characteristics in trimesic acid magnetic single-molecule junctions with different molecular adsorption orientations and electrode contact sites.The transport calculations indicate that a single-molecule switch and a significant enhancement of spin transport and photoresponse can be achieved when the molecular adsorption orientation changes from planar geometry to upright geometry.The maximum spin polarization of current and photocurrent in upright molecular junctions exceeds 90%.Moreover,as the Ni tip electrode moves,the tunneling magnetoresistance of upright molecular junctions can be increased to 70%.The analysis of the spin-dependent PDOS elucidates that the spinterfaces between organic molecule and ferromagnetic electrodes are modulated by molecular adsorption orientation,where the molecule in upright molecular junctions yields higher spin polarization.Our theoretical work paves the way for designing spintronic devices and optoelectronic devices with anisotropic functionality base on anisotropic molecules.

Linear magnetoresistance and structural distortion in layered SrCu_(4-x)P_(2) single crystals

We report a systematic study on layered metal SrCu_(4-x)P_(2) single crystals via transport, magnetization, thermodynamic measurements and structural characterization. We find that the crystals show large linear magnetoresistance without any sign of saturation with a magnetic field up to 30T. We also observe a phase transition with significant anomalies in resistivity and heat capacity at T_(p)~140 K. Thermal expansion measurement reveals a subtle lattice parameter variation near Tp, i.e.,?L_(c)/L_(c)~0.062%. The structural characterization confines that there is no structure transition below and above T_(p). All these results suggest that the nonmagnetic transition of SrCu_(4-x)P_(2) could be associated with structural distortion.

Negative magnetoresistance in the antiferromagnetic semimetal V_(1/3)TaS_(2)

Intercalated transition metal dichalcogenides(TMDCs)attract much attention due to their rich properties and potential applications.In this article,we grew successfully high-quality V_(1/3)TaS_(2) crystals by a vapor transport method.We measured the magnetization,longitudinal resistivityρxx(T,H),Hall resistivityρxy(T,H),as well as performed calculations of the electronic band structure.It was found that V_(1/3)TaS_(2) is an A-type antiferromagnet with the Neel temperature T_(N)=6.20 K,and exhibits a negative magnetoresistance(MR)near T_(N).Both band structure calculations and Hall resistivity measurements demonstrated it is a magnetic semimetal.

Magnetic Switching Dynamics and Tunnel Magnetoresistance Effect Based on Spin-Splitting Noncollinear Antiferromagnet Mn_(3)Pt

In comparison to ferromagnets,antiferromagnets are believed to have superior advantages for applications in next-generation magnetic storage devices,including fast spin dynamics,vanishing stray fields and robust against external magnetic field,etc.However,unlike ferromagnetic orders,which could be detected through tunneling magnetoresistance effect in magnetic tunnel junctions,the antiferromagnetic order(i.e.,Néel vector)cannot be effectively detected by the similar mechanism due to the spin degeneracy of conventional antiferromagnets.Recently discovered spin-splitting noncollinear antiferromagnets,such as Mn_(3)Pt with momentum-dependent spin polarization due to their special magnetic space group,make it possible to achieve remarkable tunneling magnetoresistance effects in noncollinear antiferromagnetic tunnel junctions.Through first-principles calculations,we demonstrate that the tunneling magnetoresistance ratio can reach more than 800% in Mn_(3)Pt/perovskite oxides/Mn_(3)Pt antiferromagnetic tunnel junctions.We also reveal the switching dynamics of Mn_(3)Pt thin film under magnetic fields using atomistic spin dynamic simulation.Our study provides a reliable method for detecting Néel vector of noncollinear antiferromagnets through the tunnel magnetoresistance effect and may pave its way for potential applications in antiferromagnetic memory devices.

Unconventional room-temperature negative magnetoresistance effect in Au/n-Ge:Sb/Au devices

Non-magnetic semiconductor materials and their devices have attracted wide attention since they are usually prone to exhibit large positive magnetoresistance(MR)effect in a low static magnetic field environment at room temperature.However,how to obtain a large room-temperature negative MR effect in them remains to be studied.In this paper,by designing an Au/n-Ge:Sb/Au device with metal electrodes located on identical side,we observe an obvious room-temperature negative MR effect in a specific 50 T pulsed high magnetic field direction environment,but not in a static low magnetic field environment.Through the analysis of the experimental measurement of the Hall effect results and bipolar transport theory,we propose that this unconventional negative MR effect is mainly related to the charge accumulation on the surface of the device under the modulation of the stronger Lorentz force provided by the pulsed high magnetic field.This theoretical analytical model is further confirmed by regulating the geometry size of the device.Our work sheds light on the development of novel magnetic sensing,magnetic logic and other devices based on non-magnetic semiconductors operating in pulsed high magnetic field environment.

Colossal negative magnetoresistance in spin glass Na(Zn,Mn)Sb

We report the study of magnetic and transport properties of polycrystalline and single crystal Na(Zn,Mn)Sb,a new member of“111”type of diluted magnetic materials.The material crystallizes into Cu2Sb-type structure which is isostructural to“111”type Fe-based superconductors.With suitable carrier and spin doping,the Na(Zn,Mn)Sb establishes spin-glass ordering with freezing temperature(Tf)below 15 K.Despite lack of long-range ferromagnetic ordering,Na(Zn,Mn)Sb single crystal still shows sizeable anomalous Hall effect below Tf.Carrier concentration determined by Hall effect measurements is over 1019 cm-3.More significantly,we observe colossal negative magnetoresistance(MR≡[ρ(H)−ρ(0)]/ρ(0))of-94%in the single crystal sample.

Spin injection into heavily-doped n-GaN via Schottky barrier

Spin injection and detection in bulk GaN were investigated by performing magnetotransport measurements at low temperatures.A non-local four-terminal lateral spin valve device was fabricated with Co/GaN Schottky contacts.The spin injection efficiency of 21%was achieved at 1.7 K.It was confirmed that the thin Schottky barrier formed between the heavily ndoped GaN and Co was conducive to the direct spin tunneling,by reducing the spin scattering relaxation through the interface states.

Abnormal magnetoresistance effect in the Nb/Si superconductor–semiconductor heterojunction

Ultrathin superconducting Nb films of about 8 nm thick have been deposited on heavily doped Si substrates through DC magnetron sputtering and then the high-quality Nb/Si superconductor–semiconductor heterojunctions have been fabricated by electron beam lithography and reactive ion etching.An abnormal magnetoresistance effect,which manifests itself as a zero field resistance peak under a magnetic field applied perpendicular to the interface,has been distinctly observed when the Nb film is in the superconductiing state.By considering the heterojunction interface being equivalent to the structure of superconductor–barrier layer–superconductor configuration,we could generally understand this unusual effect based on the Andreev reflection mechanism.Our results can be of help for the future development on compatibility and scalability of the silicon-based nanoscale superconducting devices for integrated circuits and superconducting quantum electronics.

Spin Hall Magnetoresistance in Pt/BiFeO_(3)Bilayer

Multiferroic materials are general antiferromagnets with negligibly small net magnetization,which strongly limits their magnetoelectric applications in spintronics.Spin Hall magnetoresistance(SMR)is sensitive to the orientation of the Néel vector,which can be applied for the detection of antiferromagnetic states.Here,we apply SMR on the unique room-temperature antiferromagnetic multiferroic material BiFeO_(3)(BFO).The angular dependence of SMR in a bilayer of epitaxial BFO(001)and heavy metal Pt is studied.By rotating the sample under a magnetic field of 80 kOe in the film plane,the resistance shows the maximum when the field is perpendicular to the current while it shows the minimum when the field is along the current.This can be well explained by the SMR in the bilayer of heavy metal/antiferromagnet with the relative orientation between the Néel vector and current direction.In contrast,the angular dependence of the resistance of Pt directly deposited on a SrTiO_(3)(001)substrate shows a 90°shift with the magnetic field rotating in the film plane,which originates from the Hanle magnetoresistance of Pt.The obtained spin mixing conductance at the Pt/BFO interface clearly confirms the efficient spin transmission.Our results provide a possible solution for applications of antiferromagnetic multiferroic materials in spintronics.

Negative magnetoresistance in Dirac semimetal Cd_(3)As_(2)with in-plane magnetic field perpendicular to current

Topological insulators and semimetals have exotic surface and bulk states with massless Dirac or Weyl fermions,demonstrating microscopic transport phenomenon based on relativistic theory.Chiral anomaly induced negative magnetoresistance(negative MR)under parallel magnetic field and current has been used as a probable evidence ofWeyl fermions in recent years.Here we report a novel negative MR result with mutually perpendicular in-plane magnetic field and current in Cd_(3)As_(2)nanowires.The negative MR has a considerable value of-16%around 1.5 K and could persist to room temperature of 300 K with value of-1%.The gate tuning and angle dependence of the negative MR demonstrate the mechanism of the observed negative MR is different from the chiral anomaly.Percolating current paths induced by charge puddles and disorder might be involved to produce such considerable negative MR.Our results indicate the negative MR effect in topological semimetals involves synergistic effects of many mechanisms besides chiral anomaly.

Nonmonotonic anomalous Hall effect and anisotropic magnetoresistance in SrRuO_(3)/PbZr_(0.52)Ti_(0.48)O_(3)heterostructures

We fabricate SrRuO_(3)/PbZr_(0.52)Ti_(0.48)O_(3)heterostructures each with an in-plane tensile-strained SrRuO_(3)layer and investigate the effect of an applied electric field on anomalous Hall effect.The four-fold symmetry of anisotropic magnetoresistance and the nonmonotonic variation of anomalous Hall resistivity are observed.By applying positive electric field or negative electric field,the intersecting hump-like feature is suppressed or enhanced,respectively.The sign and magnitude of the anomalous Hall conductivity can be effectively controlled with an electric field under a high magnetic field.The electric-field-modulated anomalous Hall effect is associated with the magnetization rotation in SrRuO_(3).The experimental results are helpful in modulating the magnetization rotation in spintronic devices based on SrRuO_(3)heterostructures.

Measurement of T wave in magnetocardiography using tunnel magnetoresistance sensor

Several critical clinical applications of magnetocardiography(MCG)involve its T wave.The T wave’s accuracy directly affects the diagnostic accuracy of MCG for ischemic heart disease and arrhythmogenic.Tunnel magnetoresistance(TMR)attracts attention as a new MCG measurement technique.However,the T waves measured by TMR are often drowned in noise.The accuracy of T waves needs to be discussed to determine the clinical value of MCG measured by TMR.This study uses an improved empirical mode decomposition(EMD)algorithm and averaging to eliminate the noise in the MCG measured by TMR.The MCG signals measured by TMR are compared with MCG measured by the optically pumped magnetometer(OPM)to judge its accuracy.Using the MCG measured by OPM as a reference,the relative errors in time and amplitude of the T wave measured by TMR are 3.4%and 1.8%,respectively.This is the first demonstration that TMR can accurately measure the time and amplitude of MCG T waves.The ability to provide reliable T wave data illustrates the significant clinical application value of TMR in MCG measurement.

Observation of spin-glass behavior in 1111-type magnetic semiconductor(La,Ba)(Zn,Mn)SbO

We report the successful fabrication of a new 1111-type bulk magnetic semiconductor(La,Ba)(Zn,Mn)SbO through the solid solution of(La,Ba)and(Zn,Mn)in the parent compound LaZnSbO.The polycrystalline samples(La,Ba)(Zn,Mn)SbO crystallize into ZrCuSiAs-type tetragonal structure,which has the same structure as iron-based superconductor LaFeAsO_(1-δ).The DC magnetization measurements indicate the existence of spin-glass ordering,and the coercive field is up to~11500 Oe(1 Oe=79.5775 A·m^(-1)).The AC magnetic susceptibility further determines that the samples evolve into a conventional spin-glass ordering state below the spin freezing temperature T_(f).In addition,the negative magnetoresistance(MR≡[ρ(H)-ρ(0)]/ρ(0))reaches-88%under 9 T.

Electric modulation of anisotropic magnetoresistance in Pt/HfO_(2-x)/NiO_(y)/Ni heterojunctions

Electric field control of magnetism through nanoionics has attracted tremendous attention owing to its high efficiency and low power consumption.In solid-state dielectrics,an electric field drives the redistribution of ions to create onedimensional magnetic conductive nanostructures,enabling the realization of intriguing magnetoresistance(MR)effects.Here,we explored the electric-controlled nickel and oxygen ion migration in Pt/HfO_(2-x)/NiO_(y)/Ni heterojunctions for MR modulation.By adjusting the voltage polarity and amplitude,the magnetic conductive filaments with mixed nickel and oxygen vacancy are constructed.This results in the reduction of device resistance by~10^(3)folds,and leads to an intriguing partial asymmetric MR effect.We show that the difference of the device resistance under positive and negative saturation magnetic fields exhibits good linear dependence on the magnetic field angle,which can be used for magnetic field direction detection.Our study suggests the potential of electrically controlled ion migration in creating novel magnetic nanostructures for sensor applications.

Recent progress on the planar Hall effect in quantum materials

The planar Hall effect(PHE),which originates from anisotropic magnetoresistance,presents a qualitative and simple approach to characterize electronic structures of quantum materials by applying an in-plane rotating magnetic field to induce identical oscillations in both longitudinal and transverse resistances.In this review,we focus on the recent research on the PHE in various quantum materials,including ferromagnetic materials,topological insulators,Weyl semimetals,and orbital anisotropic matters.Firstly,we briefly introduce the family of Hall effect and give a basic deduction of PHE formula with the second-order resistance tensor,showing the mechanism of the characteristicπ-period oscillation in trigonometric function form with aπ/4 phase delay between the longitudinal and transverse resistances.Then,we will introduce the four main mechanisms to realize PHE in quantum materials.After that,the origin of the anomalous planar Hall effect(APHE)results,of which the curve shapes deviate from that of PHE,will be reviewed and discussed.Finally,the challenges and prospects for this field of study are discussed.

Magnetic field‐enhanced water splitting enabled by bifunctional molybdenum‐doped nickel sulfide on nickel foam

Herein,we report bifunctional molybdenum-doped nickel sulfide on nickel foam(Mo-NiS_(x)/NF)for magnetic field-enhanced overall water splitting under alkaline conditions.Proper doping of Mo can lead to optimization of the electronic structure of NiS_(x),which accelerates the dissociation of H2O and the adsorption of OH−in the hydrogen evolution reaction(HER)and the oxygen evolution reaction(OER)processes,respectively.In addition,the magnetically active Mo-NiS_(x)/NF can further enhance the HER and OER activity under an applied magnetic field due to the magnetoresistance effect and the ferromagnetic(FM)exchange-field penetration effect.As a result,Mo-NiS_(x)/NF requires low overpotentials of 307 mV at 50mA cm^(−2)(for OER)and 136 mV at 10mA cm^(−2)(for HER)under a magnetic field of 10000 G.Furthermore,the electrolytic cell constructed by the bifunctional Mo-NiS_(x)/NFs as both the cathode and the anode shows a low cell voltage of 1.594 V at 10 mA cm^(−2)with optimal stability over 60 h under the magnetic field.Simultaneous enhancement of the HER and OER processes by an external magnetic field through rational design of electrocatalysts might be promising for overall water splitting applications.

Different behavior of upper critical field in Fe1-xSe single crystals

The temperature dependences of upper critical field(Hc2) for a series of iron-deficient Fe1-xSe single crystals are obtained from the measurements of in-plane resistivity in magnetic fields up to 9 T and perpendicular to the ab plane. For the samples with lower superconducting transition temperature Tc(< 7.2 K), the temperature dependence of Hc2 is appropriately described by an effective two-band model. For the samples with higher Tc( 7.2 K), the temperature dependence can also be fitted by a single-band Werthamer–Helfand–Hohenberg formula, besides the two-band model. Such a Tc-dependent change in Hc2(T) behavior is discussed in connection with recent related experimental results, showing an inherent link between the changes of intrinsic superconducting and normal state properties in the Fe Se system.

Mn-based antiperovskite functional materials: Review of research

Our recent research on the Mn-based antiperovskite functional materials AXMn 3(A:metal or semiconducting elements;X:C or N) is outlined.Antiperovskite carbides(e.g.,AlCMn 3) show large magnetocaloric effect comparable to those of typical magnetic refrigerant materials.Enhanced giant magnetoresistance up to 70% at 50 kOe(1 Oe = 79.5775 A.m-1) over a wide temperature span was obtained in Ga1-xZnxCMn3 and GaCMn3-xNix.In Cu0.3Sn0.5NMn3.2,negative thermal expansion(NTE) was achieved in a wide temperature region covering room temperature(α =-6.8 ppm/K,150 K-400 K).Neutron pair distribution function analysis suggests the Cu/Sn-Mn bond fluctuation is the driving force for the NTE in Cu1-xSnxNMn3.In CuN1-xCx Mn3 and CuNMn3-yCoy,the temperature coefficient of resistivity(TCR) decreases monotonically from positive to negative as Co or C content increases.TCR is extremely low when the composition approaches the critical points.For example,TCR is ～ 1.29 ppm/K between 240K and 320K in CuN0.95C0.05Mn3,which is one twentieth of that in the typical low-TCR materials(～ 25 ppm/K).By studying the critical scaling behavior and X deficiency effect,some clues of localized-electron magnetism have been found against the background of electronic itinerant magnetism.

Two-dimensional XSe2（X = Mn, V） based magnetic tunneling junctions with high Curie temperature

Two-dimensional(2D) magnetic crystals have attracted great attention due to their emerging new physical phenomena. They provide ideal platforms to study the fundamental physics of magnetism in low dimensions. In this research,magnetic tunneling junctions(MTJs) based on XSe2(X = Mn, V) with room-temperature ferromagnetism were studied using first-principles calculations. A large tunneling magnetoresistance(TMR) of 725.07% was obtained in the MTJs based on monolayer MnSe2. Several schemes were proposed to improve the TMR of these devices. Moreover, the results of our non-equilibrium transport calculations showed that the large TMR was maintained in these devices under a finite bias.The transmission spectrum was analyzed according to the orbital components and the electronic structure of the monolayer XSe2(X = Mn, V). The results in this paper demonstrated that the MTJs based on a 2D ferromagnet with room-temperature ferromagnetism exhibited reliable performance. Therefore, such devices show the possibility for potential applications in spintronics.