Interracial barrier is a key factor that determines the performances of heterojunctions. In this work, we study the effect of manganite film thickness on the effective interracial barrier for La0.67Sr0.33MnO3/Nb：SrTi...Interracial barrier is a key factor that determines the performances of heterojunctions. In this work, we study the effect of manganite film thickness on the effective interracial barrier for La0.67Sr0.33MnO3/Nb：SrTiO3 junctions, The barrier is extracted from the forward current-voltage characteristics. Our results demonstrate that the barrier decreases gradually from -0.85 eV to -0.60 eV when the film thickness decreases from 150 nm to 2 nm. The overall value of the barrier is only about 50% of the corresponding one determined from the photovoltaic effect.展开更多
An oxide p-n heterojunction composed of a 150-nm La0.67Ca0.33 MnO3（LCMO） film, 0.05 wt% Nb doped SrTiO3 substrate（STON）, and sandwiched 5-nm LaAlO3（LAO） thin film is fabricated with the pulsed laser deposition t...An oxide p-n heterojunction composed of a 150-nm La0.67Ca0.33 MnO3（LCMO） film, 0.05 wt% Nb doped SrTiO3 substrate（STON）, and sandwiched 5-nm LaAlO3（LAO） thin film is fabricated with the pulsed laser deposition technique and the interfacial transport properties are experimentally studied. The rectifying behavior of the junction is in agreement with Newman＇s equation, indicating that tunneling is the dominant process for the carriers to pass through the interface while thermal emission is the dominant transport model of an LCMO/STON heterojunction with no LAO buffer layer.展开更多
A manganite p-n heterojunction composed of Lao.67Sro.33MnO3 film and 0.05 wt% Nb-doped SrTiO3 substrate is fabricated. Rectifying behavior of the junction well described by the Shockley equation is observed, and the t...A manganite p-n heterojunction composed of Lao.67Sro.33MnO3 film and 0.05 wt% Nb-doped SrTiO3 substrate is fabricated. Rectifying behavior of the junction well described by the Shockley equation is observed, and the transport properties of the interface are experimentally studied. A satisfactorily logarithmic linear dependence of resistance on temperature is observed in a temperature range of 150 K-380 K, and the linear relation between bias and activation energies deduced from the R - lIT curves is observed. According to activation energy, the interfacial barrier of the heterojunction is obtained, which is 0.91 eV.展开更多
An oxide p-n heterojunction composed of Pro.6Ca0.4MnO3 film, with a charge order （CO） transition, and lwt% Nb- doped SrTiO3 substrate is fabricated, and the transport properties of the interface are experimentally s...An oxide p-n heterojunction composed of Pro.6Ca0.4MnO3 film, with a charge order （CO） transition, and lwt% Nb- doped SrTiO3 substrate is fabricated, and the transport properties of the interface are experimentally studied. The rectifying behavior of the junction, well described by the Newman equation, is observed, indicating that tunneling is the dominant process by which the carriers pass through the interface. Above and below the CO transition temperature, satisfactory linear dependencies of junction resistance on temperature are observed, but the slopes of the two resistance-temperature relations are different. The CO process is believed to be relevant to this difference.展开更多
Textured surface boron-doped zinc oxide （BZO） thin films were fabricated by metal organic chemical vapor deposition as transparent conductive oxide （TCO） for solar cells. The surface microstructure was characteriz...Textured surface boron-doped zinc oxide （BZO） thin films were fabricated by metal organic chemical vapor deposition as transparent conductive oxide （TCO） for solar cells. The surface microstructure was characterized by X-ray diffraction spectrum and scan- ning electron microscope. The optical transmittance was shown by optical transmittance microscope and the electrical properties were tested by Hall measurements. The thickness of the BZO film has crucial impact on the surface morphology, optical transmittance, and resistivity. The electrical and optical properties as well as surface microstructure varied inconsistently with the increase of the film thickness. The grain size and the surface roughness increased with the increase of the film thickness. The conductivity increased from 0.96x 103 tO 6.94x 103 S/cm while the optical transmittance decreased from above 85% to nearly 80% with the increase of film thickness from 195 to 1021 nm. The BZO films deposited as both front and back transparent electrodes were applied to the bifacial p- type a-Si：H/i-type a-Si：H/n-type c-Si/i-type a-Si：H/n＋-type a-Si：H heterojunction solar cells to obtain the optimized parameter of thickness. The highest efficiency of all the samples was 17.8% obtained with the BZO film thickness of 829 nm. Meanwhile, the fill factor was 0.676, the open- circuit voltage was 0.63 Vand the short-circuit density was 41.79 mA/cm2. The properties of the solar cells changing with the thickness were also investigated.展开更多
A novel photovoltaic phenomenon of internal photoemission was found in a low cost manganite La0.62Ca0.29K0.09MnO3 （LCKMO）/zinc oxide （ZnO） heterojunction bilayers grown on ITO substrate by pulsed laser deposition ...A novel photovoltaic phenomenon of internal photoemission was found in a low cost manganite La0.62Ca0.29K0.09MnO3 （LCKMO）/zinc oxide （ZnO） heterojunction bilayers grown on ITO substrate by pulsed laser deposition （PLD） at relative low growth temperature. The heterostructure ITO/LCKMO/ZnO/A1 exhibits reproducible rectifying characteristics and light cur- rent under continuous laser irradiation of 2 = 325 nm. We report here the influence of LCKMO/ZnO bilayers＇ thickness on the electrical and photoelectric properties of the heterostructure at room temperature. The power conversion efficiency （PCE） is achieved when the LCKMO and ZnO layers are thin enough or the full space charge layer is sufficient. We obtained the maximum value of PCE of 0.0145% when the thicknesses of LCKMO and ZnO layers are 25 and 150 nm, respectively. The open circuit voltage is 0.04 V under this condition due to the internal photoemission.展开更多
We present a numerical study of the effects of the energy barrier between the lowest unoccupied molecular orbital of the acceptor layer and the cathode, the thicknesses of the donor layer and acceptor layer on the dis...We present a numerical study of the effects of the energy barrier between the lowest unoccupied molecular orbital of the acceptor layer and the cathode, the thicknesses of the donor layer and acceptor layer on the distributions of carrier density, the electric fields and the electric potentials of organic planar heterojunction solar cells. We obtained the quantitative dependencies of the distribution of carrier density, electric fields and the electric potentials on these quantities. The results provide a theoretical foundation for the experimental study of open-circuit organic planar heterojunction solar cells.展开更多
Temperature dependence on rectifying and photoelectronic properties of La_（0.67）Sr_（0.33）MnO_3/Nb：SrTiO_3（LSMO/STON） junctions with the thickness values of LSMO film varying from 1 nm to 54 nm are systematicall...Temperature dependence on rectifying and photoelectronic properties of La_（0.67）Sr_（0.33）MnO_3/Nb：SrTiO_3（LSMO/STON） junctions with the thickness values of LSMO film varying from 1 nm to 54 nm are systematically studied. As shown experimentally, the junctions exhibit good rectifying properties. The significant differences in photoemission property among the LSMO/STON junctions are observed. For the junction in a thicker LSMO film, the photocurrent shows a monotonic growth when temperature decreases from 300 K to 13 K. While for the junction in an ultrathin LSMO film, the behaviors of photocurrent are more complicated. The photocurrent increases rapidly to a maximum and then smoothly decreases with the decrease of temperature. The unusual phenomenon can be elucidated by the diffusion and recombination model of the photocarrier.展开更多
基金Project supported by the National Natural Science Foundation of China (Grant Nos. 10804094,50832007,50721001 and 50821001)the Natural Science Foundation of Hebei Province,China (Grant No. A2009000339)
文摘Interracial barrier is a key factor that determines the performances of heterojunctions. In this work, we study the effect of manganite film thickness on the effective interracial barrier for La0.67Sr0.33MnO3/Nb：SrTiO3 junctions, The barrier is extracted from the forward current-voltage characteristics. Our results demonstrate that the barrier decreases gradually from -0.85 eV to -0.60 eV when the film thickness decreases from 150 nm to 2 nm. The overall value of the barrier is only about 50% of the corresponding one determined from the photovoltaic effect.
基金Project supported by the National Natural Science Foundation of China(Grant No.10804089)
文摘An oxide p-n heterojunction composed of a 150-nm La0.67Ca0.33 MnO3（LCMO） film, 0.05 wt% Nb doped SrTiO3 substrate（STON）, and sandwiched 5-nm LaAlO3（LAO） thin film is fabricated with the pulsed laser deposition technique and the interfacial transport properties are experimentally studied. The rectifying behavior of the junction is in agreement with Newman＇s equation, indicating that tunneling is the dominant process for the carriers to pass through the interface while thermal emission is the dominant transport model of an LCMO/STON heterojunction with no LAO buffer layer.
基金Project supported by the National Natural Science Foundation of China(Grant No.10804089)
文摘A manganite p-n heterojunction composed of Lao.67Sro.33MnO3 film and 0.05 wt% Nb-doped SrTiO3 substrate is fabricated. Rectifying behavior of the junction well described by the Shockley equation is observed, and the transport properties of the interface are experimentally studied. A satisfactorily logarithmic linear dependence of resistance on temperature is observed in a temperature range of 150 K-380 K, and the linear relation between bias and activation energies deduced from the R - lIT curves is observed. According to activation energy, the interfacial barrier of the heterojunction is obtained, which is 0.91 eV.
基金Project supported by the National Natural Science Foundation of China(Grant No.10804089)
文摘An oxide p-n heterojunction composed of Pro.6Ca0.4MnO3 film, with a charge order （CO） transition, and lwt% Nb- doped SrTiO3 substrate is fabricated, and the transport properties of the interface are experimentally studied. The rectifying behavior of the junction, well described by the Newman equation, is observed, indicating that tunneling is the dominant process by which the carriers pass through the interface. Above and below the CO transition temperature, satisfactory linear dependencies of junction resistance on temperature are observed, but the slopes of the two resistance-temperature relations are different. The CO process is believed to be relevant to this difference.
文摘Textured surface boron-doped zinc oxide （BZO） thin films were fabricated by metal organic chemical vapor deposition as transparent conductive oxide （TCO） for solar cells. The surface microstructure was characterized by X-ray diffraction spectrum and scan- ning electron microscope. The optical transmittance was shown by optical transmittance microscope and the electrical properties were tested by Hall measurements. The thickness of the BZO film has crucial impact on the surface morphology, optical transmittance, and resistivity. The electrical and optical properties as well as surface microstructure varied inconsistently with the increase of the film thickness. The grain size and the surface roughness increased with the increase of the film thickness. The conductivity increased from 0.96x 103 tO 6.94x 103 S/cm while the optical transmittance decreased from above 85% to nearly 80% with the increase of film thickness from 195 to 1021 nm. The BZO films deposited as both front and back transparent electrodes were applied to the bifacial p- type a-Si：H/i-type a-Si：H/n-type c-Si/i-type a-Si：H/n＋-type a-Si：H heterojunction solar cells to obtain the optimized parameter of thickness. The highest efficiency of all the samples was 17.8% obtained with the BZO film thickness of 829 nm. Meanwhile, the fill factor was 0.676, the open- circuit voltage was 0.63 Vand the short-circuit density was 41.79 mA/cm2. The properties of the solar cells changing with the thickness were also investigated.
基金supported by the National Natural Science Foundation of China (No. 90922034 and No. 21131002)Specialized Research Fund for the Doctoral Program of Higher Education (No. 20110061130005)
文摘A novel photovoltaic phenomenon of internal photoemission was found in a low cost manganite La0.62Ca0.29K0.09MnO3 （LCKMO）/zinc oxide （ZnO） heterojunction bilayers grown on ITO substrate by pulsed laser deposition （PLD） at relative low growth temperature. The heterostructure ITO/LCKMO/ZnO/A1 exhibits reproducible rectifying characteristics and light cur- rent under continuous laser irradiation of 2 = 325 nm. We report here the influence of LCKMO/ZnO bilayers＇ thickness on the electrical and photoelectric properties of the heterostructure at room temperature. The power conversion efficiency （PCE） is achieved when the LCKMO and ZnO layers are thin enough or the full space charge layer is sufficient. We obtained the maximum value of PCE of 0.0145% when the thicknesses of LCKMO and ZnO layers are 25 and 150 nm, respectively. The open circuit voltage is 0.04 V under this condition due to the internal photoemission.
基金supported by the National Natural Science Foundation of China (10974074)the Natural Science Foundation of Gansu Province (0803RJZA104)
文摘We present a numerical study of the effects of the energy barrier between the lowest unoccupied molecular orbital of the acceptor layer and the cathode, the thicknesses of the donor layer and acceptor layer on the distributions of carrier density, the electric fields and the electric potentials of organic planar heterojunction solar cells. We obtained the quantitative dependencies of the distribution of carrier density, electric fields and the electric potentials on these quantities. The results provide a theoretical foundation for the experimental study of open-circuit organic planar heterojunction solar cells.
基金Project supported by the National Natural Science Foundation of China(Grant Nos.11520101002 and 11474024)
文摘Temperature dependence on rectifying and photoelectronic properties of La_（0.67）Sr_（0.33）MnO_3/Nb：SrTiO_3（LSMO/STON） junctions with the thickness values of LSMO film varying from 1 nm to 54 nm are systematically studied. As shown experimentally, the junctions exhibit good rectifying properties. The significant differences in photoemission property among the LSMO/STON junctions are observed. For the junction in a thicker LSMO film, the photocurrent shows a monotonic growth when temperature decreases from 300 K to 13 K. While for the junction in an ultrathin LSMO film, the behaviors of photocurrent are more complicated. The photocurrent increases rapidly to a maximum and then smoothly decreases with the decrease of temperature. The unusual phenomenon can be elucidated by the diffusion and recombination model of the photocarrier.
