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Material Removal Model Considering Influence of Curvature Radius in Bonnet Polishing Convex Surface 被引量:3
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作者 SONG Jianfeng YAO Yingxue 《Chinese Journal of Mechanical Engineering》 SCIE EI CAS CSCD 2015年第6期1109-1116,共8页
The bonnet tool polishing is a novel, advanced and ultra-precise polishing process, by which the freeform surface can be polished. However, during the past few years, not only the key technology of calculating the dwe... The bonnet tool polishing is a novel, advanced and ultra-precise polishing process, by which the freeform surface can be polished. However, during the past few years, not only the key technology of calculating the dwell time and controlling the surface form in the bonnet polishing has been little reported so far, but also little attention has been paid to research the material removal function of the convex surface based on the geometry model considering the influence of the curvature radius. Firstly in this paper, for realizing the control of the freeform surface automatically by the bonnet polishing, on the basis of the simplified geometric model of convex surface, the calculation expression of the polishing contact spot on the convex surface considering the influence of the curvature radius is deduced, and the calculation model of the pressure distribution considering the influence of the curvature radius on the convex surface is derived by the coordinate transformation. Then the velocity distribution model is built in the bonnet polishing the convex surface. On the basis of the above research and the semi-experimental modified Preston equation obtained from the combination method of experimental and theoretical derivation, the material removal model of the convex surface considering the influence of the curvature radius in the bonnet polishing is established. Finally, the validity of the model through the simulation method has been validated. This research presents an effective prediction model and the calculation method of material removal for convex surface in bonnet polishing and prepares for the bonnet polishing the free surface numerically and automatically. 展开更多
关键词 bonnet polishing convex surface material removal model curvature radius
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Novel model of material removal rate on ultrasonic-assisted chemical mechanical polishing for sapphire 被引量:1
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作者 Mufang ZHOU Min ZHONG Wenhu XU 《Friction》 SCIE EI CAS CSCD 2023年第11期2073-2090,共18页
Ultrasonic-assisted chemical mechanical polishing(UA-CMP)can greatly improve the sapphire material removal and surface quality,but its polishing mechanism is still unclear.This paper proposed a novel model of material... Ultrasonic-assisted chemical mechanical polishing(UA-CMP)can greatly improve the sapphire material removal and surface quality,but its polishing mechanism is still unclear.This paper proposed a novel model of material removal rate(MRR)to explore the mechanism of sapphire UA-CMP.It contains two modes,namely two-body wear and abrasive-impact.Furthermore,the atomic force microscopy(AFM)in-situ study,computational fluid dynamics(CFD)simulation,and polishing experiments were conducted to verify the model and reveal the polishing mechanism.In the AFM in-situ studies,the tip scratched the reaction layer on the sapphire surface.The pit with a 0.22 nm depth is the evidence of two-body wear.The CFD simulation showed that abrasives could be driven by the ultrasonic vibration to impact the sapphire surface at high frequencies.The maximum total velocity and the air volume fraction(AVF)in the central area increased from 0.26 to 0.55 m/s and 20%to 49%,respectively,with the rising amplitudes of 1–3μm.However,the maximum total velocity rose slightly from 0.33 to 0.42 m/s,and the AVF was nearly unchanged under 40–80 r/min.It indicated that the ultrasonic energy has great effects on the abrasive-impact mode.The UA-CMP experimental results exhibited that there was 63.7%improvement in MRR when the polishing velocities rose from 40 to 80 r/min.The roughness of the polished sapphire surface was R_(a)=0.07 nm.It identified that the higher speed achieved greater MRR mainly through the two-body wear mode.This study is beneficial to further understanding the UA-CMP mechanism and promoting the development of UA-CMP technology. 展开更多
关键词 SAPPHIRE ultrasonic-assisted chemical mechanical polishing(UA-CMP) material removal rate(MRR)predictive model atomic force microscopy(AFM)in-situ studies computational fluid dynamics(CFD)
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