A Reverse Numerical Approach to Determine Elastic-plastic Properties of Multi-layer Material Systems with Flat Cylindrical Indenters

In the present study, the indentation testing with a flat cylindrical indenter on typical multi-layer material systems was simulated successfully by finite element method. The emphasis was put on the methods of extracting the yield stresses and strain-hardening modulus of upper and middle-layers of three-layer material systems from the indentation testing. The slope of the indentation depth to the applied indentation stress curve was found to have a turning point, which can be used to determine the yield stress of the upper-layer. Then, a different method was also presented to determine the yield stress of the middle-layer. This method was based on a set of assumed applied indentation stresses which were to be intersected by the experimental results in order to meet the requirement of having the experimental indentation depth. At last, a reverse numerical algorithm was explored to determine the yield stresses of upper and middle-layers simultaneously by using the indentation testing with two different size indenters. This method assumed two ranges of yield stresses to simulate the indentation behavior. The experimental depth behavior was used to intersect the simulated indentation behavior. And the intersection corresponded to the values of yield stresses of upper and middle-layers. This method was also used further to determine the strain-hardening modulus of upper and middle-layers simultaneously.

Meso-design of heterogeneous dielectric material systems:Structure property relationships

Heterogeneous materials are inherently dielectric,and charge distribution and transport in such materials involves complex local fields and polarizations that are remarkably sensitive to morphology and the interaction of conduction and permittivity.Trial and error design of such material systems is time consuming and expensive,and often ineffectual.However,heterogeneous materials are essential for energy conversion and storage,and they have become the foundation for major advances in the performance of devices such as batteries,fuel cells,separation membranes,and solar cells.The present paper presents some relationships in support of rational design based on an extensive experimental validation of the concepts and analysis that form a foundation for that design.Salient results include the prediction and confirmation of volume fraction effects(including nondilute mixtures),and the prediction and direct measurement of surface charge effects at internal interfaces as a function of constituent morphology and orientation.

Design and modeling of high‑performance mid‑wave infrared InAsSb‑based nBn photodetector using barrier band engineering approaches

We report a new nBn photodetector(nBn-PD)design based on the InAlSb/AlSb/InAlSb/InAsSb material systems for midwavelength infrared(MWIR)applications.In this structure,delta-doped compositionally graded barrier(δ-DCGB)layers are suggested,the advantage of which is creation of a near zero valence band ofset in nBn photodetectors.The design of theδ-DCGB nBn-PD device includes a 3µm absorber layer(n-InAs0.81Sb0.19),a unipolar barrier layer(AlSb),and 0.2μm contact layer(n-InAs0.81Sb0.19)as well as a 0.116µm linear grading region(InAlSb)from the contact to the barrier layer and also from the barrier to the absorber layer.The analysis includes various dark current contributions,such as the Shockley-Read-Hall(SRH),trap-assisted tunneling(TAT),Auger,and Radiative recombination mechanisms,to acquire more precise results.Consequently,we show that the method used in the nBn device design leads to difusion-limited dark current so that the dark current density is 2.596×10^(−8)A/cm^(2)at 150 K and a bias voltage of−0.2 V.The proposed nBn detector exhibits a 50%cutof wavelength of more than 5µm,the peak current responsivity is 1.6 A/W at a wavelength of 4.5µm and a−0.2 V bias with 0.05 W/cm2 backside illumination without anti-refective coating.The maximum quantum efciency at 4.5µm is about 48.6%,and peak specifc detectivity(D*)is of 3.37×10^(10)cm⋅Hz1/2/W.Next,to solve the refection concern in this nBn devices,we use a BaF_(2)anti-refection coating layer due to its high transmittance in the MWIR window.It leads to an increase of almost 100%in the optical response metrics,such as the current responsivity,quantum efciency,and detectivity,compared to the optical response without an anti-refection coating layer.

Potential of asymmetrical Si/Ge and Ge/Si based hetero-junction transit time devices over homo-junction counterparts for generation of high power

Static and dynamic properties of both complementary n-Ge/p-Si and p-Ge/n-Si hetero-junction DoubleDrift IMPATT diodes have been investigated by an advanced and realistic computer simulation technique, devel- oped by the authors, for operation in the Ka-, V- and W-band frequencies. The results are further compared with corresponding Si and Ge homo-junction devices. The study shows high values of device efficiency, such as 23%, 22% and 21.5%, for n-Ge/p-Si IMPATTs at the Ka, V and W bands, respectively. The peak device negative con- ductances for n-Si/p-Ge and n-Ge/p-Si hetero-junction devices found to be 50.7× 10^6 S/m^2 and 71.3× 106 S/m^2, which are -3-4 times better than their Si and Ge counterparts at the V-band. The computed values of RF powerdensity for n-Ge/p-Si hetero-junction IMPATTs are 1.0 ×10^9, 1.1 × 10^9 and 1.4× 10^9 W/m^2, respectively, for Ka-, V- and W-band operation, which can be observed to be the highest when compared with Si, Ge and n-Si/p-Ge devices. Both of the hetero-junctions, especially the n-Ge/p-Si hetero-junction diode, can thus become a superior RF-power generator over a wide range of frequencies. The present study will help the device engineers to choose a suitable material pair for the development of high-power MM-wave IMPATT for applications in the civil and defense-related arena.

A quadratic yield function with multi-involved-yield surfaces describing anisotropic behaviors of sheet metals under tension/compression

A quadratic yield function which can describe the anisotropic behaviors of sheet metals with tension/compression symmetry and asymmetry is proposed.Five mechanical properties are adopted to determine the coefficients of each part of the yield function.For particular cases,the proposed yield function can be simplified to Mises or Hill’s quadratic yield function.The anisotropic mechanical properties are expressed by defining an angle between the current normalized principal stress space and the reference direction with the assumption of orthotropic anisotropy.The accuracy of the proposed yield function in describing the anisotropy under tension and compression is demonstrated.