Progress in complementary metal–oxide–semiconductor silicon photonics and optoelectronic integrated circuits

Silicon photonics is an emerging competitive solution for next-generation scalable data communications in different application areas as high-speed data communication is constrained by electrical interconnects. Optical interconnects based on silicon photonics can be used in intra/inter-chip interconnects, board-to-board interconnects, short-reach communications in datacenters, supercomputers and long-haul optical transmissions. In this paper, we present an overview of recent progress in silicon optoelectronic devices and optoelectronic integrated circuits （OEICs） based on a complementary metal-oxide-semiconductor-compatible process, and focus on our research contributions. The silicon optoelectronic devices and OEICs show good characteristics, which are expected to benefit several application domains, including communication, sensing, computing and nonlinear systems.

Two-dimensional materials in photonic integrated circuits:recent developments and future perspectives[Invited]

The heterogeneous integration of photonic integrated circuits(PICs)with a diverse range of optoelectronic materials has emerged as a transformative approach,propelling photonic chips toward larger scales,superior performance,and advanced integration levels.Notably,two-dimensional(2D)materials,such as graphene,transition metal dichalcogenides(TMDCs),black phosphorus(BP),and hexagonal boron nitride(hBN),exhibit remarkable device performance and integration capabilities,offering promising potential for large-scale implementation in PICs.In this paper,we first present a comprehensive review of recent progress,systematically categorizing the integration of photonic circuits with 2D materials based on their types while also emphasizing their unique advantages.Then,we discuss the integration approaches of 2D materials with PICs.We also summarize the technical challenges in the heterogeneous integration of 2D materials in photonics and envision their immense potential for future applications in PICs.

Two-dimensional optoelectronic devices for silicon photonic integration

With the unprecedented increasing demand for extremely fast processing speed and huge data capacity,traditional silicon-based information technology is becoming saturated due to the encountered bottle-necks of Moore's Law.New material systems and new device architectures are considered promising strategies for this challenge.Two-dimensional(2D)materials are layered materials and garnered persistent attention in recent years owing to their advantages in ultrathin body,strong light-matter interaction,flexible integration,and ultrabroad operation wavelength range.To this end,the integra-tion of 2D materials into silicon-based platforms opens a new path for silicon photonic integration.In this work,a comprehensive review is given of the recent signs of progress related to 2D material inte-grated optoelectronic devices and their potential applications in silicon photonics.Firstly,the basic op-tical properties of 2D materials and heterostructures are summarized in the first part.Then,the state-of-the-art three typical 2D optoelectronic devices for silicon photonic applications are reviewed in detail.Finally,the perspective and challenges for the aim of 3D monolithic heterogeneous integration of these 2D optoelectronic devices are discussed.

Integrated optoelectronics with two-dimensional materials

As we enter the post-Moore era,heterogeneous optoelectronic integrated circuits(OEICs)are attracting significant attention as an alternative approach to scaling to smaller-sized transistors.Two-dimensional(2D)materials,offering a range of intriguing optoelectronic properties as semiconductors,semimetals,and insulators,provide great potential for developing nextgeneration heterogeneous OEICs.For instance,Fermi levels of 2D materials can be tuned by applying electrical voltages,while their atomically thin geometries are inherently suited for the fabrication of planar devices without suffering from lattice mismatch.Since the first graphene-on-silicon OEICs were demonstrated in 2011,2D-material heterogeneous OEICs have significantly progressed.To date,researchers have a better understanding of the importance of interface states on the optical properties of chip-integrated 2D materials.Moreover,there has been impressive progress towards the use of 2D materials for waveguide-integrated lasers,modulators,and photodetectors.In this review,we summarize the history,status,and trend of integrated optoelectronics with 2D materials.

Multifunctional silicon-based light emitting device in standard complementary metal oxide semiconductor technology

A three-terminal silicon-based light emitting device is proposed and fabricated in standard 0.35 μm complementary metal-oxide-semiconductor technology. This device is capable of versatile working modes： it can emit visible to near infra-red （NIR） light （the spectrum ranges from 500 nm to 1000 nm） in reverse bias avalanche breakdown mode with working voltage between 8.35 V-12 V and emit NIR light （the spectrum ranges from 900 nm to 1300 nm） in the forward injection mode with working voltage below 2 V. An apparent modulation effect on the light intensity from the polysilicon gate is observed in the forward injection mode. Furthermore, when the gate oxide is broken down, NIR light is emitted from the polysilicon/oxide/silicon structure. Optoelectronic characteristics of the device working in different modes are measured and compared. The mechanisms behind these different emissions are explored.

超低介电常数的多孔F-pSiCOH薄膜制备及其紫外固化处理

面向高性能集成电路可靠性设计要求之下,开展以硅集成电路(IC)三维集成器件超低介电常数的介电薄膜研究。采用化学气相沉积法制备了一种超低介电常数(k)值的多孔F-pSiCOH薄膜。利用傅里叶变换红外光谱测定了多孔F-pSiCOH薄膜的化学结构和化学键,并探究了紫外线辐射对多孔F-pSiCOH薄膜机械性能的影响。结果表明:纳米孔和氟原子的引入能有效地降低介电常数,使多孔F-SiCOH薄膜的k值为2.15。紫外固化处理增强了多孔F-pSiCOH薄膜的弹性模量,使多孔F-pSiCOH薄膜的弹性模量从4.84GPa增大到5.76GPa,力学性能得到优化。

硅基太赫兹发射机集成电路研究进展

近年来,太赫兹频段作为下一代6G通信技术的备选频段受到了广泛关注,太赫兹也成为研究热点。太赫兹集成电路(芯片)是推动各种太赫兹应用系统快速发展的关键。随着硅基工艺的特征频率/最大振荡频率(f_(T)/f_(max))不断提高,采用低成本硅基工艺,在太赫兹频段实现全集成的硅基太赫兹发射机成为可能。本文简要综述了基于硅基工艺的太赫兹发射机芯片技术的重要研究进展,包括150 GHz直接上变频发射机芯片、220 GHz滑动中频超外差发射机芯片,以及D波段直接调制发射机芯片。实验测试验证了太赫兹频段在高速通信应用中的优势,硅基太赫兹收发集成电路有望成为6G系统中突破高速数据速率需求的关键技术。

集成电路领域铜基材料的应用现状及与石墨烯复合展望

大规模集成电路正朝着高密度、低功耗、微型化的趋势发展,对材料性能要求日渐提高。铜基材料凭借优异的力学性能和功能特性在集成电路及相关领域得到广泛应用。本文对铜基材料在引线框架、互连材料、键合丝、集成电路载体、热管理材料等方面的应用现状进行了介绍,并对石墨烯/铜复合材料在集成电路及相关领域中的应用前景进行了展望。石墨烯/铜复合材料能够综合铜和石墨烯的性能优势,表现出高强高导、超高导电、高导热低膨胀、化学稳定、抗电迁移等特性,有望为满足集成电路及相关领域对高性能铜基材料的迫切需求提供可能的解决途径。

三信道石墨烯电光调制和模分复用集成器件

提出了一种三信道石墨烯电光调制和模分复用集成器件,该器件由单层石墨烯覆盖的一维光子晶体纳米梁腔电光调制模块和纳米线波导模分复用模块组成。利用三维时域有限差分法进行仿真分析,结果表明,该器件可以同时实现TE0模、TE1模和TE2模的调制和模分复用功能。当波长为1570 nm时,消光比大于28.3 dB,插入损耗小于0.21 dB,信道串扰小于−28.6 dB,调制器的3 dB带宽达到100 GHz,器件尺寸约为100μm×13μm。该集成器件性能优良,在大容量光通信系统中具有重要的应用价值。

集成电路用硅基材料分离纯化技术的应用研究进展

硅基材料是集成电路制程中的关键材料之一,广泛应用于外延、化学气相沉积、离子注入、掺杂、刻蚀、清洗、掩蔽膜生成等工艺。硅基材料的纯度直接影响着集成电路的性能、集成度、成品率。文章阐述了在集成电路用硅基材料中应用较多的分离纯化技术的原理与应用进展,包括吸附精馏、络合精馏、亚沸精馏、减压精馏、光氯化、循环过滤等,比对了各种分离纯化技术的优缺点,并对硅基材料提纯的前景进行了分析和展望。

集成电路中的引线框架质量影响分析

阐述集成电路中的引线框架质量影响,引线框架的作用及性能要求,引线框架加工工艺,探讨铜基合金的对比,C18150强度和导电率符合引线框架的性能要求。通过蚀刻法、冲压法和轧制作为比较发现,引线框架的制作适用轧制加工。

On-chip light sources for silicon photonics

Serving as the electrical to optical converter,the on-chip silicon light source is an indispensable component of silicon photonic technologies and has long been pursued.Here,we briefly review the history and recent progress of a few promising contenders for on-chip light sources in terms of operating wavelength,pump condition,power consumption,and fabrication process.Additionally,the performance of each contender is also assessed with respect to thermal stability,which is a crucial parameter to consider in complex optoelectronic integrated circuits(OEICs)and optical interconnections.Currently,III-V-based silicon(Si)lasers formed via bonding techniques demonstrate the best performance and display the best opportunity for commercial usage in the near future.However,in the long term,direct hetero-epitaxial growth of III–V materials on Si seems more promising for low-cost,high-yield fabrication.The demonstration of high-performance quantum dot(QD)lasers monolithically grown on Si strongly forecasts its feasibility and enormous potential for on-chip lasers.The superior temperature-insensitive characteristics of the QD laser promote this design in large-scale high-density OEICs.The Germanium(Ge)-on-Si laser is also competitive for large-scale monolithic integration in the future.Compared with a III-V-based Si laser,the biggest potential advantage of a Ge-on-Si laser lies in its material and processing compatibility with Si technology.Additionally,the versatility of Ge facilitates photon emission,modulation,and detection simultaneously with a simple process complexity and low cost.

硅基一维纳米半导体材料的制备及光电性能

硅基一维纳米半导体材料是新型的硅基光电子材料 ,在硅基光电集成和纳电子领域有重要的应用前景 .主要论述了硅基一维纳米半导体材料 (纳米硅线、纳米ZnO线 )的制备 ,着重一维纳米材料的阵列化制备 ,讨论了其生长机理 ,研究了硅基一维纳米半导体材料的的光学、电学等物理性能 .

应用于塑料光纤通信接收芯片的集成光电探测器(英文)

基于0.5μm标准Biplor、互补金属氧化物半导体和双扩散金属氧化物工艺设计了两种不同结构不同尺寸的光电探测器,包括传统的P+/N-EPI/BN+结构光电探测器和多叉指P+/N-EPI/BN+结构的光电探测器.通过仿真优化设计了光电探测器的结构参量和性能,测试结果表明:多叉指状P+/NEPI/BN+光电探测器能够改善650nm的响应度以及降低结电容.选择该结构大面积P+/N-EPI/BN+光电探测器用于和跨阻放大器以及后端放大器的单片集成,采用0.5μm标准Biplor、互补金属氧化物半导体和双扩散金属氧化物工艺实现了一个用于650nm塑料光纤通信的单片集成光接收芯片.该光接收芯片的测试结果表明:对650nm的入射光,在160 Mb/s速率的伪随机二进制序列以及小于10-9的误码率条件下,光接收芯片的灵敏度为-15dBm,并能得到清晰的眼图.因此,本文设计的光电探测器可以很好地应用于宽带接入网中的高速塑料光纤通信系统的光接收芯片中.

硅基太赫兹集成电路研究进展

太赫兹波处在亚毫米波与远红外光之间,应用于无线通信具有比微波通信更大的传输带宽和传输速率,在大数据无线通信等方面具有巨大的应用潜力。特征频率逐渐达到太赫兹频段的硅基集成电路工艺,为高集成度低成本太赫兹通讯电路的实现提供了可能。本文综述了近年来硅基太赫兹集成电路的研究进展,论述了硅基太赫兹集成电路设计在有源器件模型、互连结构、电路设计方法等方面面临的挑战,并对硅基太赫兹集成电路的发展趋势进行了讨论。

Si基光电子学的研究与展望

Si基光电子学是为顺应二十一世纪以现代光通信和光电子计算机为主的信息科学技术发展需要,在全世界范围内迅速兴起的一个极为活跃的研究前沿。其最终目标之一是为了实现人们所期盼的全Si光电子集成电路。本文尝试性地评论了这一集Si材料技术、纳米技术、微电子技术以及光电子技术为一体的新型交叉学科,近年来在直接带隙Si基低维材料的设计、晶粒有序Si基纳米材料的制备与稳定高效Si基发光器件的探索等方面所取得的若干重要研究进展,并预测了全Si光电子集成技术的未来发展趋势。

晶粒有序Si基纳米发光材料的自组织化生长

提出了两类用于制备晶粒有序Si基纳米发光材料的方案。一种是利用固体表面预成核位置的有序化,如台阶表面、再构表面、吸附表面以及图形表面等加以实现。另一种则是通过控制自组织生长成校过程的有序性,如退火诱导晶化、引入埋层应变、异种原子掺杂以及分子自组装等加以实现。评论了这些制备方法的最新进展,并展望了它的未来发展趋势。

新颖的硅基光电材料

光电集成是未来信息技术发展的重要方向之一,硅基光电集成具有巨大的应用前景,在硅基材料及集成方面源头创新空间很大。论述了新颖的硅基材料研究现状及应用前景。

铜基集成电路引线框架材料的发展概况

阐述了集成电路的发展及其对引线框架材料的要求。综述了国内外目前使用铜基集成电路引线框架材料的现状及所开发的高强度高导电铜基引线框架材料的特性，并指出了今后的发展方向。

硅基光电集成材料及器件的研究进展

以硅基光电集成回路为主线,综述了不同的硅基光波导材料的制备技术和硅基光波导的制作工艺及其对光传输损耗的影响。分析了硅基光波导与锗硅光探测器集成用两种不同的耦合方式,阐明了波导与探测器集成的机理及设计理论基础。归纳出硅基键合激光器的四种技术方案,指出其共同优点是克服材料异质外延引起的晶格失配和热膨胀非共容,对实现OEIC行之有效。