The performance limits of a multilayer graphene nanoribbon(GNR)field-effect transistor(FET)are assessed and compared with those of a monolayer GNRFET and a carbon nanotube(CNT)FET.The results show that with a thin hig...The performance limits of a multilayer graphene nanoribbon(GNR)field-effect transistor(FET)are assessed and compared with those of a monolayer GNRFET and a carbon nanotube(CNT)FET.The results show that with a thin high dielectric constant(high-κ)gate insulator and reduced interlayer coupling,a multilayer GNRFET can significantly outperform its CNT counterpart with a similar gate and bandgap in terms of the ballistic on-current.In the presence of optical phonon scattering,which has a short mean free path in the graphene-derived nanostructures,the advantage of the multilayer GNRFET is even more significant.Simulation results indicate that multilayer GNRs with incommensurate non-AB stacking and weak interlayer coupling are the best candidates for high-performance GNRFETs.展开更多
Two-dimensional(2D) transition-metal dichalcogenides(TMDCs) have attracted enormous interests as the novel channel materials for atomically thin transistors. Despite considerable progress in recent years, the transist...Two-dimensional(2D) transition-metal dichalcogenides(TMDCs) have attracted enormous interests as the novel channel materials for atomically thin transistors. Despite considerable progress in recent years, the transistor performance is largely limited by the excessive contact resistance at the source/drain interface. In this review, a summary of recent progress on improving electrical contact to TMDC transistors is presented. Several important strategies including topology of contacts, choice of metals and interface engineering are discussed.展开更多
基金This work was supported by the National Science Foundation(NSF)and the Office of Naval Research(ONR),Intel,and MARCO MSD.
文摘The performance limits of a multilayer graphene nanoribbon(GNR)field-effect transistor(FET)are assessed and compared with those of a monolayer GNRFET and a carbon nanotube(CNT)FET.The results show that with a thin high dielectric constant(high-κ)gate insulator and reduced interlayer coupling,a multilayer GNRFET can significantly outperform its CNT counterpart with a similar gate and bandgap in terms of the ballistic on-current.In the presence of optical phonon scattering,which has a short mean free path in the graphene-derived nanostructures,the advantage of the multilayer GNRFET is even more significant.Simulation results indicate that multilayer GNRs with incommensurate non-AB stacking and weak interlayer coupling are the best candidates for high-performance GNRFETs.
文摘Two-dimensional(2D) transition-metal dichalcogenides(TMDCs) have attracted enormous interests as the novel channel materials for atomically thin transistors. Despite considerable progress in recent years, the transistor performance is largely limited by the excessive contact resistance at the source/drain interface. In this review, a summary of recent progress on improving electrical contact to TMDC transistors is presented. Several important strategies including topology of contacts, choice of metals and interface engineering are discussed.
