Influence of pressure disturbance wave on dynamic response characteristics of liquid film seal for multiphase pump

Slug flow or high GVF(Gas Volume Fraction)conditions can cause pressure disturbance waves and alternating loads at the boundary of mechanical seals for multiphase pumps,endangering the safety of multiphase pump units.The mechanical seal model is simplified by using periodic boundary conditions and numerical calculations are carried out based on the Zwart-Gerber-Belamri cavitation model.UDF(User Define Function)programs such as structural dynamics equations,alternating load equations,and pressure disturbance equations are embedded in numerical calculations,and the dynamic response characteristics of mechanical seal are studied using layered dynamic mesh technology.The results show that when the pressure disturbance occurs at the inlet,as the amplitude and period of the disturbance increase,the film thickness gradually decreases.And the fundamental reason for the hysteresis of the film thickness change is that the pressure in the high-pressure area cannot be restored in a timely manner.The maximum value of leakage and the minimum value of axial velocity are independent of the disturbance period and determined by the disturbance amplitude.The mutual interference between enhanced waves does not have a significant impact on the film thickness,while the front wave in the attenuated wave has a promoting effect on the subsequent film thickness changes,and the fluctuation of the liquid film cavitation rate and axial velocity under the attenuated wave condition deviates from the initial values.Compared with pressure disturbance conditions,alternating load conditions have a more significant impact on film thickness and leakage.During actual operation,it is necessary to avoid alternating load conditions in multiphase pump mechanical seals.

Influence of Pressure on SiNx：H Film by LF-PECVD

Hydrogenated silicon nitride films as an effective antireflection and passivation coating of silicon solar cell were prepared on p-type polished silicon substrate （1.0 f^em） by direct LF-PECVD （low frequency plasma enhanced chemical vapor deposition） of Centrotherm. The preferable passivation effect was obtained and the refractive index was in the range of 2.017-2.082. The refractive index of the hydrogenated silicon nitride films became larger with the increase of the pressure. Fourier transform infrared spectroscopy was used to study the pressure influence on the film structural properties. The results highlighted high hydrogen bond and high Si-N bonds density in the film, which were greatly influenced by the pressure. The passivation effect of the films was infuenced by the Si dangling bonds density. Finally the effective minority liftetime degradation with time was shown and discussed by considering the relationship between the structural properties and passivation.

Determination of the maximum allowable gas pressure for an underground gas storage salt cavern——A case study of Jintan,China

Increasing the allowable gas pressure of underground gas storage(UGS) is one of the most effective methods to increase its working gas capacity. In this context, hydraulic fracturing tests are implemented on the target formation for the UGS construction of Jintan salt caverns, China, in order to obtain the minimum principal in situ stress and the fracture breakdown pressure. Based on the test results, the maximum allowable gas pressure of the Jintan UGS salt cavern is calibrated. To determine the maximum allowable gas pressure, KING-1 and KING-2 caverns are used as examples. A three-dimensional(3D)geomechanical model is established based on the sonar data of the two caverns with respect to the features of the target formation. New criteria for evaluating gas penetration failure and gas seepage are proposed. Results show that the maximum allowable gas pressure of the Jintan UGS salt cavern can be increased from 17 MPa to 18 MPa(i.e. a gradient of about 18 k Pa/m at the casing shoe depth). Based on numerical results, a field test with increasing maximum gas pressure to 18 MPa has been carried out in KING-1 cavern. Microseismic monitoring has been conducted during the test to evaluate the safety of the rock mass around the cavern. Field monitoring data show that KING-1 cavern is safe globally when the maximum gas pressure is increased from 17 MPa to 18 MPa. This shows that the geomechanical model and criteria proposed in this context for evaluating the maximum allowable gas pressure are reliable.

EFFECT OF Ar PRESSURE ON STRUCTURAL AND ELECTRICAL PROPERTIES OF Cu FILMS DEPOSITED ON GLASS BY DC MAGNETRON SPUTTERING

Cu films with thickness of 630-1300nm were deposited on glass substrates without heating by DC magnetron sputtering in pure Ar gas. Ar pressure was controlled to 0.5, 1.0 and 1.5Pa respectively. The target voltage was fixed at 500V but the target current increased from 200 to 1150mA with Ar pressure increasing. X-ray diffraction, scanning electron microscopy and atomic force microscopy were used to observe the structural characterization of the films. The resistivity of the films was measured using four-point probe technique. At all the Ar pressures, the Cu films have mixture crystalline orientations of [111], [200] and [220] in the direction of the film growth. The film deposited at lower pressure shows more [111] orientation while that deposited at higher pressure has more [220] orientation. The amount of larger grains in the film prepared at 0.5Pa Ar pressure is slightly less than that prepared at 1.0Pa and 1.5Pa Ar pressures. The resistivities of the films prepared at three different Ar pressures represent few differences, about 3-4 times of that of bulk material. Besides the deposition rate increases with Ar pressure because of the increase in target current. The contribution of the bombardment of energetic reflected Argon atoms to these phenomena is discussed.

THE EFFECTS OF PULSE BIAS VOLTAGE AND N_2 PARTIAL PRESSURE ON TiAlN FILMS OF ARC ION PLATING (AIP)

Owing to the characteristics of arc ion plating(AIP) technique, the structure and composition of TiAlN films can be tailored by controlling of various parameters such as compositions of target materials, N2 partial pressure, substrate bias and so on. In this study, several titanium aluminum nitride films were deposited on 1Cr11Ni2W2MoV steel for compressor blade of areo-engine under different d.c pulse bias voltage and nitrogen partial pressure. The effects of substrate pulse bias and nitrogen partial pressure on the deposition rate, droplet formation, microstruture and elemental component of the films were investigated.

Deposition of Thin Titania Films by Dielectric Barrier Discharge at Atmospheric Pressure

A homogeneous atmospheric pressure dielectric barrier discharge is studied. It is in argon with small admixtures of titanium tetrachloride vapour and oxygen for the deposition of thin titania films on glass substrates. A special electrode configuration was applied in order to deposit the titania film uniformly. The sustaining voltage （6 kV to 12 kV）, current density （about 3 mA/cm^2） and total optical emission spectroscopy were monitored to characterize the discharge in the gap of 2 mm. Typical deposition rates ranged from approximately 30 nm/min to 120 nm/min. The film morphology was investigated by using scanning electron microscopy （SEM） and the composition was determined with an energy dispersive x-ray spectroscopy （EDS） analysis tool attached to the SEM. The crystal structure and phase composition of the films were studied by x-ray diffraction （XRD）. Several parameters such as the discharge power, the ratio of carrier gas to the precursor gas, the deposition time on the crystallization behavior, the deposition rate and the surface morphology of the titania film were extensively studied.

Highly Sensitive Flexible Pressure Sensors based on Graphene/Graphene Scrolls Multilayer Hybrid Films

In recent years,flexible pressure sensors have attracted much attention owing to their potential applications in motion detection and wearable electronics.As a result,important innovations have been reported in both conductive materials and the underlying substrates,which are the two crucial components of a pressure sensor.1D materials like nanowires are being widely used as the conductive materials in flexible pressure sensors,but such sensors usually exhibit low performances mainly due to the lack of strong interfacial interactions between the substrates and 1D materials.In this paper,we report the use of graphene/graphene scrolls hybrid multilayers films as the conductive material and a microstructured polydimethylsiloxane substrate using Epipremnum aureum leaf as the template to fabricate highly sensitive pressure sensors.The 2D structure of graphene allows to strongly anchor the scrolls to ensure the improved adhesion between the highly conductive hybrid films and the patterned substrate.We attribute the increased sensitivity(3.5 k Pa^-1),fast response time(<50 ms),and the good reproducibility during 1000 loading-unloading cycles of the pressure sensor to the synergistic effect between the 1D scrolls and 2D graphene films.Test results demonstrate that these sensors are promising for electronic skins and motion detection applications.

Investigation of working pressure on the surface roughness controlling technology of glow discharge polymer films based on the diagnosed plasma

The effects of working pressure on the component, surface morphology, surface roughness, and deposition rate of glow discharge polymer （GDP） films by a trans-2-butene/hydrogen gas mixture were investigated based on plasma characteristics diagnosis. The composition and ion energy distributions of a multi-carbon （CaHs/H2） plasma mixture at different working pressures were diagnosed by an energy-resolved mass spectrometer （MS） during the GDP film deposition process. The Fourier transform infrared spectroscopy （FT-IR）, field emission scanning electron microscope （SEM） and white-fight interferometer （WLI） results were obtained to investigate the structure, morphology and roughness characterization of the deposited films, respectively. It was found that the degree of ionization of the C4H8/H2 plasma reduces with an increase in the working pressure. At a low working pressure, the C-H fragments exhibited small-mass and high ion energy in plasma. In this case, the film had a low CH3/CH2 ratio, and displayed a smooth surface without any holes, cracks or asperities. While the working pressure increased to 15 Pa, the largest number of large-mass fragments led to the deposition rate reaching a maximum of 2.11 #m h-1, and to hole defects on the film surface. However, continuing to increase the working pressure, the film surface became smooth again, and the interface between clusters became inconspicuous without etching pits.

Diffusion-controlled Adsorption Kinetics at Air/Solution Surface Studied by Maximum Bubble Pressure Method

In studying the diffusion-controlled adsorption kinetics of aqueous surfactant solutions at the air/solution surface by means of the maximal bubble pressure method, Fick's diffusion equation for a sphere should be used. In this paper the equation was solved by means of Laplace transformation under different initial and boundary conditions. The dynamic surface adsorption F(t) for a surfactant solution, which was used to describe the diffusion-controlled adsorption kinetics at the solution surface, was derived. Different from the planar surface adsorption, the dynamic surface adsorption F(t) for the short time consists of two terms: one is the same as Ward-Tordai equation and the other reflects the geometric effect caused by the spherical bubble surface. This effect should not be neglected for the very small radius of the capillary. The equilibrium surface tension γeq and the dynamic surface tension γ(t) of aqueous C10E6 [CH3(CH2)9(OCH2CH2)6OH] solution at temperature 25℃ were measuredby means of Wilhelmy plate method and maximal bubble pressure method respectively. As t→ 0, the theoreticalanalysis is in good agreement with experimental results and the dependence of γ(t) on is linear.

Gas Film Disturbance Characteristics Analysis of High-Speed and High-Pressure Dry Gas Seal

The dry gas seal（DGS） has been widely used in high parameters centrifugal compressor, but the intense vibrations of shafting, especially in high-speed condition, usually result in DGS＇s failure. So the DGS＇s ability of resisting outside interference has become a determining factor of the further development of centrifugal compressor. However, the systematic researches of which about gas film disturbance characteristics of high parameters DGS are very little. In order to study gas film disturbance characteristics of high-speed and high-pressure spiral groove dry gas seal（S-DGS） with a flexibly mounted stator, rotor axial runout and misalignment are taken into consideration, and the finite difference method and analytical method are used to analyze the influence of gas film thickness disturbance on sealing performance parameters, what＇s more, the effects of many key factors on gas film thickness disturbance are systematically investigated. The results show that, when sealed pressure is 10.1MPa and seal face average linear velocity is 107.3 m/s, gas film thickness disturbance has a significant effect on leakage rate, but has relatively litter effect on open force; Excessively large excitation amplitude or excessively high excitation frequency can lead to severe gas film thickness disturbance; And it is beneficial to assure a smaller gas film thickness disturbance when the stator material density is between 3.1 g/cm3 to 8.4 g/cm3; Ensuring sealing performance while minimizing support axial stiffness and support axial damping can help to improve dynamic tracking property of dry gas seal. The proposed research provides the instruction to optimize dynamic tracking property of the DGS.

The Effect of Pressure on the Dissociation of H_2/CH_4Gas Mixture during Diamond Films Growth via Chemical Vapor Deposition

Monte Carlo simulations are adopted to study the electron motion in the mixture of H2 and CH4 during diamond synthesis via Glow Plasma-assisted Chemical Vapor Deposition (GPCVD). The non-uniform electric field is used and the avalanche of electrons is taken into account in this simulation. The average energy distribution of electrons and the space distribution of effective species such as CH3, CH+3, CH+ and H at various gas pressures are given in this paper, and optimum experimental conditions are inferred from these results.

Pressure Distribution in Gas Film in Traveling Wave Rotary Ultrasonic Motor

The current research on gas film is mainly in various precision instruments and machinery while the studies on gas film in ultrasonic motor is few.Based on original N-S equations,the mechanism of gas film action in traveling wave rotary ultrasonic motor(TRUM)is explored through physical explanations and analyzed through numerical simulation.Pressure distributions in the smooth gas film and the gas film considering stator teeth are analyzed.It is concluded that the squeeze number and the non-dimensional amplitude are the main factors that affect the pressure distribution.As the approximate region becomes smaller,the pressure peak of the smooth gas film is close to an atmosphere.The pressure on tooth region is the same as that on smooth model while the region between teeth affects weakly on the whole model.

The Effects of Gas Composition on the Atmospheric Pressure Plasma Jet Modification of Polyethylene Films

Polyethylene （PE） films are treated using an atmospheric pressure plasma jet （APPJ） with He or He/O2 gas for different periods of time. The influence of gas type on the plasma polymer interactions is studied. The surface contact angle of the PE film can be effectively lowered to 58° after 20 s of He/O2 plasma treatment and then remains almost unchanged for longer treatment durations, while, for He plasma treatment, the film surface contact angle drops gradually to 47° when the time reaches 120 s. Atomic force microscopy （AFM） results show that the root mean square （RMS） roughness was significantly higher for the He/O2 plasma treated samples than for the He plasma treated counterparts, and the surface topography of the He/O2 plasma treated PE films displays evenly distributed dome-shaped small protuberances. Chemical composition analysis reveals that the He plasma treated samples have a higher oxygen content but a clearly lower percentage of COO than the comparable He/O2 treated samples, suggesting that differences exist in the mode of incorporating oxygen between the two gas condition plasma treatments. Electron spin resonance （ESR） results show that the free radical concentrations of the He plasma treated samples were clearly higher than those of the He/O2 plasma treated ones with other conditions unchanged.

Influence of Ambient Gas and Oxygen Pressure on Nd∶LuVO_4 Films Grown by Pulsed Laser Deposition

The （ 200 ） dominated Nd： LuVO4 films were fabricated successfully on polished SlOE under different ambient gases and different oxygen pressures. By XRD, it is shown that a film with good crystallization is deposited under oxygen and the optimal pressure is 20 Pa. The surface morphology of Nd：LuVO4 films was observed by AFM, and it is found that oxygen pressure influences the surface morphology of Nd ：LuVO4 films. The ratio of content of Nd：LuVO4 films was estimated according to the yields of Lu and V by using RBS spectra, this ratio is in good agreement with the target composition. The effective index refractive of every mode is 2.0044, 1.7098, measured by prism coupler method.

Ar Pressure Dependence of the Properties of Molybdenum-doped ZnO Films Grown by RF Magnetron Sputtering

Transparent conducting oxide film of molybdenum-doped zinc oxide （MZO） with high transparency and relatively low resistivity was prepared by RF （radio frequency） magnetron sputtering at room temperature. The structural, electrical, and optical properties of the films deposited under different Ar pressure were investigated.XRD （X-ray diffraction） patterns show that the nature of the films is polycrystalline with a hexagonal structure and a preferred orientation along the c-axis. The resistivity increases as Ar pressure increases. The lowest range exceeds 88% for all the samples. The optical band gap decreases from 3.27 to 3.15 eV with increasing Ar pressure from 0.6 to 3.0 Pa.

Effect of N_2-Gas Partial Pressure on the Structure and Properties of Copper Nitride Films by DC Reactive Magnetron Sputtering

Copper nitride thin films were deposited on glass substrates by reactive direct current （DC） magnetron sputtering at various N2-gas partial pressures and room temperature. Xray diffraction measurements showed that the films were composed of Cu3N crystallites and exhibited a preferential orientation of the [111] direction at a low nitrogen gas （N2） partial pressure. The film growth preferred the [111] and the [100] direction at a high N2 partial pressure. Such preferential film growth is interpreted as being due to the variation in the Copper （Cu） nitrification rate with the N2 pressure. The N2 partial pressure affects not only the crystal structure of the film but also the deposition rate and the resistivity of the Cu3N film. In our experiment, the deposition rate of Cu3N films was 18 nm/min to 30 nm/min and increased with the N2 partial pressure. The resistivity of the Cu3N films increased sharply with the increasing N2 partial pressure. At a low N2 partial pressure, the Cu3N films showed a metallic conduction mechanism through the Cu path, and at a high N2 partial pressure, the conductivity of the Cu3N films showed a semiconductor conduction mechanism.

Deposition of Polymer Thin Film Using an Atmospheric Pressure Micro-Plasma Driven by Dual-Frequency Excitation

Polymer thin film deposition using an atmospheric pressure micro-plasma jet driven by dual-frequency excitations is described in this paper. The discharge process was operated with a mixture of argon （6 slm） and a small amount of acetone （0-2100 ppm）. Plasma composition was measured by optical emission spectroscopy （OES）. In addition to a large number of Ar spectra lines, we observed some spectra of C, CN, CH and C2. Through changing acetone content mixed in argon, we found that the optimum discharge condition for deposition can be characterized by the maximum concentration of carbonaceous species. The deposited film was characterized by scanning electron microscopy （SEM） and X-ray photoelectron spectroscopy （XPS） and Fourier transform infrared （FTIR） spectroscopy. The XPS indicated that the film was mostly composed of C with trace amount of O and N elements. The FTIR suggested different carbon-containing bonds （-CHx, C=O, C=C, C-O-C） presented in the deposited film.

Effect of pressure on the electrical properties of flexible NiPc thin films fabricated by rubbing-in technology

Nickel phthalocyanine(Ni Pc) film was deposited onto the surface of flexible conductive glass by rubbing-in technology and used to fabricate devices based on ITO/Ni Pc/CNT/rubber structure. The I–V characteristics of the devices were investigated under different uniaxial pressures of 200, 280, and 480 gf/cm^(2), applied perpendicular to the surface of the Ni Pc film. Results showed that the nonlinearity coefficients of the I–V curves are in the range of 2 to 3, which was found to be decreased with the increase of the pressure. The rectification ratio of the devices was estimated to be varied from 1.5 to 3 based on the applied pressure. Concluding, the resistance of the active layers was decreased with the increase of both pressure and voltage. We believe that using the rubbing-in technology under sufficient applied pressure it is possible to utilize Ni Pc for the development of various electronic devices such as diodes, nonlinear resistors, and sensors.

Effect of sputtering pressure and rapid thermal annealing on optical properties of Ta_2O_5 thin films

Ta2O5 thin films were deposited by DC reactive magnetron sputtering followed by rapid thermal annealing(RTA). Influence of sputtering pressure and annealing temperature on surface characteristics,microstructure and optical property of Ta2O5 thin films were investigated. As-deposited Ta2O5 thin films are amorphous. It takes hexagonal structure(δ-Ta2O5) after being annealed at 800 ℃. A transition from δ-Ta2O5 to orthorhombic structure(L-Ta2O5) occurs at 900-1 000 ℃. Surface roughness is decreased after annealing at low temperature. Refractive index and extinction coefficient are decreased when annealing temperature is increased.

The effects of radio frequency atmospheric pressure plasma and thermal treatment on the hydrogenation of TiO_(2) thin film

The effects of radio frequency(RF)atmospheric pressure(AP)He/H_(2)plasma and thermal treatment on the hydrogenation of TiO_(2)thin films were investigated and compared in this work.The color of the original TiO_(2)film changes from white to black after being hydrogenated in He/H_(2)plasma at160 W(gas temperature~381℃)within 5 min,while the color of the thermally treated TiO_(2)film did not change significantly even in pure H_(2)or He/H_(2)atmosphere with higher temperature(470℃)and longer time(30 min).This indicated that a more effective hydrogenation reaction happened through RF AP He/H_(2)plasma treatment than through pure H_(2)or He/H_(2)thermal treatment.The color change of TiO_(2)film was measured based on the Commission Internationale d’Eclairage L*a*b*color space system.Hydrogenated TiO_(2)film displayed improved visible light absorption with increased plasma power.The morphology of the cauliflower-like nanoparticles of the TiO_(2)film surface remained unchanged after plasma processing.X-ray photoelectron spectroscopy results showed that the contents of Ti3+species and Ti-OH bonds in the plasma-hydrogenated black TiO_(2)increased compared with those in the thermally treated TiO_(2).X-ray diffraction(XRD)patterns and Raman spectra indicated that plasma would destroy the crystal structure of the TiO_(2)surface layer,while thermal annealing would increase the overall crystallinity.The different trends of XRD and Raman spectra results suggested that plasma modification on the TiO_(2)surface layer is more drastic than on its inner layer,which was also consistent with transmission electron microscopy results.Optical emission spectra results suggest that numerous active species were generated during RF AP He/H_(2)plasma processing,while there were no peaks detected from thermal processing.A possible mechanism for the TiO_(2)hydrogenation process by plasma has been proposed.Numerous active species were generated in the bulk plasma region,accelerated in the sheath region,and bumped toward the TiO_(2)film,which will react with the TiO_(2)surface to form OVs and disordered layers.This leads to the tailoring of the band gap of black TiO_(2)and causes its light absorption to extend into the visible region.