期刊文献+
共找到2篇文章
< 1 >
每页显示 20 50 100
Simultaneous Measurement of Fringe Visibility and Path Predictability of Wave-Particle Duality
1
作者 Jie-Hui Huang Tao Peng +1 位作者 Luo-Jia Wang Shi-Yao Zhu 《Chinese Physics Letters》 SCIE CAS CSCD 2018年第8期32-35,共4页
An experimental scheme to simultaneously obtain the information of fringe visibility and path predictability is designed. In a modified Young's double-slit experiment, two density filters rotating at different freque... An experimental scheme to simultaneously obtain the information of fringe visibility and path predictability is designed. In a modified Young's double-slit experiment, two density filters rotating at different frequencies are placed before the two pineholes to encode path information. The spatial and temporal distributions of the output provide us with the wave and particle information of the single photons, respectively. The simultaneous measurement of the wave and particle information inevitably disturbs the system and thus causes some loss of the duality information, which is equal to the mixedness of the photonic state behind the density filters. 展开更多
关键词 exp Simultaneous measurement of Fringe Visibility and path Predictability of Wave-Particle Duality
下载PDF
Heat transfer enhancement in MOSFET mounted on different FR4 substrates by thermal transient measurement
2
作者 Norazlina M S Dheepan Chakravarthii M K +2 位作者 Shanmugan S Mutharasu D Shahrom Mahmud 《Chinese Physics B》 SCIE EI CAS CSCD 2017年第9期549-556,共8页
Miniaturization of electronic package leads to high heat density and heat accumulation in electronics device, resulting in short life time and premature failure of the device. Junction temperature and thermal resistan... Miniaturization of electronic package leads to high heat density and heat accumulation in electronics device, resulting in short life time and premature failure of the device. Junction temperature and thermal resistance are the critical parameters that determine the thermal management and reliability in electronics cooling. Metal oxide field effect transistor(MOSFET)is an important semiconductor device for light emitting diode-integrated circuit(LED IC) driver application, and thermal management in MOSFET is a major challenge. In this study, investigations on thermal performance of MOSFET are performed for evaluating the junction temperature and thermal resistance. Suitable modifications in FR4 substrates are proposed by introducing thermal vias and copper layer coating to improve the thermal performance of MOSFET. Experiments are conducted using thermal transient tester(T3ster) at 2.0 A input current and ambient temperature varying from25℃ to 75℃. The thermal parameters are measured for three proposed designs: FR4 with circular thermal vias, FR4 with single strip of copper layer and embedded vias, and FR4 with I-shaped copper layer, and compared with that of plain FR4 substrate. From the experimental results, FR4I-shaped shows promising results by 33.71% reduction in junction temperature and 54.19% reduction in thermal resistance. For elevated temperature, the relative increases in junction temperature and thermal resistance are lower for FR4I-shaped than those for other substrates considered. The introduction of thermal vias and copper layer plays a significant role in thermal performance. 展开更多
关键词 metal oxide field effect transistor(MOSFET) thermal transient measurement heat transfer path FR4
下载PDF
上一页 1 下一页 到第
使用帮助 返回顶部