Realization of quantum efficiency enhanced PIN photodetector by assembling resonant waveguide grating

We demonstrate an InP/InGaAs PIN photodetector with enhanced quantum efficiency by assembling silicon resonant waveguide gratings for the application of polarization sensitive systems. The measured results show that quantum efficiency of the photodetector with silicon resonant waveguide gratings can be increased by 31.6% compared with that without silicon resonant waveguide gratings at the wavelength range of 1500 to 1600 nm for TE-polarization.

硅光电探测器阵列

以获得高量子效率的pin硅光电探测器阵列为目标,对影响pin硅光电探测器阵列量子效率和暗电流的重要因素展开了分析,此外针对探测器入射面的抗反射层结构进行了理论分析与模拟的仿真研究。流片测试结果表明,实验样品LPD型硅光电探测器阵列的单像素暗电流为2-7 pA,低于滨松S11212型商用光电探测器;结电容为45-46 pF,光响应值为0.37-0.39 A/W（仅比S11212型器件低约0.25%）。LPD硅光电探测器阵列通过耦合碘化铯晶体并封装之后,放置在物品安检机上进行扫描成像,测试结果表明：LPD硅光电探测器阵列可以在X光机165 kV,0.8 m A时穿透40 mm厚的铅饼清晰成像。LPD硅光电探测器阵列的整体灵敏度和商用S11212型光电探测器性能相当,没有明显区别。

基于黑硅微结构的全硅PIN光电探测器

本文报道了一种基于黑硅微结构的全硅PIN光电探测器。该器件结合了黑硅结构宽光谱高吸收的特性,以及PIN光电探测器高量子效率高响应速度的特点,通过在传统硅PIN光电探测器结构的基础上增加黑硅微结构层,在不影响响应速度的条件下,提高了探测器在近红外波段响应特性。并且针对纵向结构垂直入射PIN光电探测器时量子效率与响应速度相矛盾的问题,提出了解决方案。测试结果表明,该器件的量子效率可达80%,峰值波长为940 nm,光响应度达到0.55 A/W,暗电流降至700 pA,响应时间为200 ns。

Design and simulation of blue/violet sensitive photodetectors in silicon-on-insulator

According to Lambert’s law,a novel structure of photodetectors,namely photodetectors in siliconon-insulator,is proposed.By choosing a certain thickness value for the SOI layer,the photodetector can absorb blue/violet light effectively and affect the responsivity of the long wavelength in the visible and near-infrared region,making a blue/violet filter unnecessary.The material of the SOI layer is high-resistivity floating-zone silicon which can cause the neutral N type SOI layer to become fully depleted after doping with a P type impurity.This can improve the collection efficiency of short-wavelength photogenerated carriers.The device structure was optimized through numerical simulation,and the results show that the photodiode is a kind of high performance photodetector in the blue/violet region.

硅光电探测器光谱量子效率的测定

光电探测器量子效率的准确测定对光辐射计量具有重要意义。基于低温辐射计,在氦氖、氩氪离子以及钛蓝宝石激光器的10个波长上测量了无窗型硅光电探测器的外量子效率。根据光电探测器表面反射比和二氧化硅层厚度的关系,基于在3个激光波长上光电探测器表面反射比的测量结果,通过最小二乘法得到光电探测器表面二氧化硅层的厚度,并由此得到光电探测器表面的光谱反射比。根据表面反射比和激光波长上探测器外量子效率结果得到相应波长的内量子效率。进行了光谱量子效率拟合。在488～900nm光谱范围内量子效率模型拟合结果与在相应激光波长上测定的量子效率结果的偏差在1.5×10-4之内。