This paper analyzes the three main fundamental issues in the design of China's ETS pilots,including allowance allocation,price mechanism and state-owned key enterprises,and proposed suggested solutions.For the iss...This paper analyzes the three main fundamental issues in the design of China's ETS pilots,including allowance allocation,price mechanism and state-owned key enterprises,and proposed suggested solutions.For the issue of allowance allocation,we suggest that the gradual hybrid mode could be applied at the beginning,which starts with mainly free allocation and then increases auction ratio gradually.And grandfathering is a suitable method of free allocation.For the issue of price mechanism,we suggest a price floating zone with open market operation to reduce the uncertainty of prices.For the issue of state-owned key enterprises,we suggest a good coordination with SASAC,defining the state-owned property right and supervision right when state-owned key enterprises are involved into the carbon market,and the local government can set rules of allocation and transaction to limit their potential market power.展开更多
Ni/β-Ga_2 O_3 lateral Schottky barrier diodes(SBDs) were fabricated on a Sn-doped quasi-degenerate n^+-Ga_2 O_3(201)bulk substrate. The resultant diodes with an area of 7.85 ×10^(-5) cm^2 exhibited excellent rec...Ni/β-Ga_2 O_3 lateral Schottky barrier diodes(SBDs) were fabricated on a Sn-doped quasi-degenerate n^+-Ga_2 O_3(201)bulk substrate. The resultant diodes with an area of 7.85 ×10^(-5) cm^2 exhibited excellent rectifying characteristics with an ideality factor of 1.21, a forward current density(J) of 127.4 A/cm2 at 1.4 V, a specific on-state resistance(R_(on,sp)) of1.54 mΩ·cm^2,and an ultra-high on/off ratio of 2.1 ×10^(11) at±1 V. Due to a small depletion region in the highly-doped substrate, a breakdown feature was observed at-23 V, which corresponded to a breakdown field of 2.1 MV/cm and a power figure-of-merit(VB2/R_(on)) of 3.4×10~5 W/cm^2. Forward current-voltage characteristics were described well by the thermionic emission theory while thermionic field emission and trap-assisted tunneling were the dominant transport mechanisms at low and high reverse biases, respectively, which was a result of the contribution of deep-level traps at the metal-semiconductor interface. The presence of interfacial traps also caused the difference in Schottky barrier heights of 1.31 eV and 1.64 eV respectively determined by current-voltage and capacitance-voltage characteristics. With reduced trapping effect and incorporation of drift layers, the β-Ga_2 O_3 SBDs could further provide promising materials for delivering both high current output and high breakdown voltage.展开更多
经济全球化赋予了logo巨大的商业价值,随着计算机视觉领域的发展,为logo分类与识别提供了更广阔的应用领域.本文针对logo图像的分类识别,为了提高模型对logo图像分类的能力,基于logo图像整体特征不显著且数量众多的特点,提出了用细粒度...经济全球化赋予了logo巨大的商业价值,随着计算机视觉领域的发展,为logo分类与识别提供了更广阔的应用领域.本文针对logo图像的分类识别,为了提高模型对logo图像分类的能力,基于logo图像整体特征不显著且数量众多的特点,提出了用细粒度图像分类的方法渐进式多粒度拼图训练(progressive multi-granularity training of jigsaw patches, PMG-Net)对logo图像数据集进行分类.通过拼图生成器生成包含不同粒度信息的输入图像,再引入渐进式多粒度训练模块融合不同粒度的特征,融合后的特征更注重图像之间的细微差别,使logo图像分类的效果有显著提高.在提取输入图像特征时采用LeakyReLU (leaky rectified linear unit)激活函数保留图像中的负值特征信息,并引入通道注意力机制,调整特征通道的权重,增强特征信息指导能力以改进模型的分类效果.实验结果表明,本文在logo图像数据集上的分类精确率优于传统的分类方法.本文通过融合多粒度特征的渐进训练策略以及随机拼图生成器的方法实现了对logo图像的高效分类,为解决logo图像分类中存在的问题提供了一种新的思路.展开更多
基金supported by Asian CORE program"Manufacturing and Environmental Management in East Asia" of the Japan Society for the Promotion of Science(JSPS)supported by the 2010 Key Project of Philosophy and Social Sciences Research,Ministry of Education:"Research on China's Emissions Trading System under Low-carbon Economy Transformation"(Grant No.10JZD0018)+1 种基金the New Century Excellent Talents Support Plan,Ministry of Education(Grant No.NCET-10-0646)the Key Project of the National Social Science Foundation of China(Grant No.12&ZD059)
文摘This paper analyzes the three main fundamental issues in the design of China's ETS pilots,including allowance allocation,price mechanism and state-owned key enterprises,and proposed suggested solutions.For the issue of allowance allocation,we suggest that the gradual hybrid mode could be applied at the beginning,which starts with mainly free allocation and then increases auction ratio gradually.And grandfathering is a suitable method of free allocation.For the issue of price mechanism,we suggest a price floating zone with open market operation to reduce the uncertainty of prices.For the issue of state-owned key enterprises,we suggest a good coordination with SASAC,defining the state-owned property right and supervision right when state-owned key enterprises are involved into the carbon market,and the local government can set rules of allocation and transaction to limit their potential market power.
基金supported by the National Key R&D Program of China(Grant No.2017YFB0403003)the National Natural Science Foundation of China(Grant Nos.61774081,61322403,and 91850112)+3 种基金the State Key R&D Project of Jiangsu,China(Grant No.BE2018115)Shenzhen Fundamental Research Project,China(Grant Nos.201773239 and 201888588)State Key Laboratory of Wide-Bandgap Semiconductor Power Electric Devices,China(Grant No.2017KF001)the Fundamental Research Funds for the Central Universities,China(Grant Nos.021014380093 and 021014380085)
文摘Ni/β-Ga_2 O_3 lateral Schottky barrier diodes(SBDs) were fabricated on a Sn-doped quasi-degenerate n^+-Ga_2 O_3(201)bulk substrate. The resultant diodes with an area of 7.85 ×10^(-5) cm^2 exhibited excellent rectifying characteristics with an ideality factor of 1.21, a forward current density(J) of 127.4 A/cm2 at 1.4 V, a specific on-state resistance(R_(on,sp)) of1.54 mΩ·cm^2,and an ultra-high on/off ratio of 2.1 ×10^(11) at±1 V. Due to a small depletion region in the highly-doped substrate, a breakdown feature was observed at-23 V, which corresponded to a breakdown field of 2.1 MV/cm and a power figure-of-merit(VB2/R_(on)) of 3.4×10~5 W/cm^2. Forward current-voltage characteristics were described well by the thermionic emission theory while thermionic field emission and trap-assisted tunneling were the dominant transport mechanisms at low and high reverse biases, respectively, which was a result of the contribution of deep-level traps at the metal-semiconductor interface. The presence of interfacial traps also caused the difference in Schottky barrier heights of 1.31 eV and 1.64 eV respectively determined by current-voltage and capacitance-voltage characteristics. With reduced trapping effect and incorporation of drift layers, the β-Ga_2 O_3 SBDs could further provide promising materials for delivering both high current output and high breakdown voltage.
文摘经济全球化赋予了logo巨大的商业价值,随着计算机视觉领域的发展,为logo分类与识别提供了更广阔的应用领域.本文针对logo图像的分类识别,为了提高模型对logo图像分类的能力,基于logo图像整体特征不显著且数量众多的特点,提出了用细粒度图像分类的方法渐进式多粒度拼图训练(progressive multi-granularity training of jigsaw patches, PMG-Net)对logo图像数据集进行分类.通过拼图生成器生成包含不同粒度信息的输入图像,再引入渐进式多粒度训练模块融合不同粒度的特征,融合后的特征更注重图像之间的细微差别,使logo图像分类的效果有显著提高.在提取输入图像特征时采用LeakyReLU (leaky rectified linear unit)激活函数保留图像中的负值特征信息,并引入通道注意力机制,调整特征通道的权重,增强特征信息指导能力以改进模型的分类效果.实验结果表明,本文在logo图像数据集上的分类精确率优于传统的分类方法.本文通过融合多粒度特征的渐进训练策略以及随机拼图生成器的方法实现了对logo图像的高效分类,为解决logo图像分类中存在的问题提供了一种新的思路.
