The influence of the composition （Yb2O3, MgO, CeO2, Li2CO3） on the dielectric properties of medium temperature sintering （Ba, Sr）TiO3 （BST） series capacitor ceramics was investigated by means of conventional tec...The influence of the composition （Yb2O3, MgO, CeO2, Li2CO3） on the dielectric properties of medium temperature sintering （Ba, Sr）TiO3 （BST） series capacitor ceramics was investigated by means of conventional technology process and orthogonal design experiments. The major secondary influencing factors and the influencing tendency of various factor＇s levels for the dielectric properties of BST ceramics were obtained. The optimum formula for maximum dielectric constant （ε） and for minimum dielectric loss （tanδ） was obtained under the experimental conditions. The BST ceramics with optimum comprehensive properties was obtained by means of orthogonal design experiments, with the sintering temperature at 1200 ℃, the dielectric constant 5239, the dielectric loss 0.0097, withstand electric voltage over 6 MV·m^-1, capacitance temperature changing ence of various components on the providing the basis for preparation rate （△C/C） - 75.67%, and suited for Y5V character. The mechanism of the infludielectric properties of medium temperature sintering BST ceramics was studied, thus of multilayer capacitor ceramics and single-chip capacitor ceramics.展开更多
文摘The influence of the composition （Yb2O3, MgO, CeO2, Li2CO3） on the dielectric properties of medium temperature sintering （Ba, Sr）TiO3 （BST） series capacitor ceramics was investigated by means of conventional technology process and orthogonal design experiments. The major secondary influencing factors and the influencing tendency of various factor＇s levels for the dielectric properties of BST ceramics were obtained. The optimum formula for maximum dielectric constant （ε） and for minimum dielectric loss （tanδ） was obtained under the experimental conditions. The BST ceramics with optimum comprehensive properties was obtained by means of orthogonal design experiments, with the sintering temperature at 1200 ℃, the dielectric constant 5239, the dielectric loss 0.0097, withstand electric voltage over 6 MV·m^-1, capacitance temperature changing ence of various components on the providing the basis for preparation rate （△C/C） - 75.67%, and suited for Y5V character. The mechanism of the infludielectric properties of medium temperature sintering BST ceramics was studied, thus of multilayer capacitor ceramics and single-chip capacitor ceramics.
