Increasingly, mobile communications standards require high power efficiency and low currents in the low power mode. This paper proposes a fully-integrated multi-mode and multi-band power amplifier module （PAM） to me...Increasingly, mobile communications standards require high power efficiency and low currents in the low power mode. This paper proposes a fully-integrated multi-mode and multi-band power amplifier module （PAM） to meet these requirements. A dual-path PAM is designed for high-power mode （HPM）, medium-power mode （MPM）, and low-power mode （LPM） operations without any series switches for different mode selection. Good performance and significant current saving can be achieved by using an optimized load impedance design for each power mode. The PAM is tapeout with the InGaP/GaAs heterojunction bipolar transistor （HBT） process and the 0.18-μm complementary metal-oxide semiconductor （CMOS） process. The test results show that the PAM achieves a very low quiescent current of 3 mA in LPM. Meanwhile, across the 1.7-2.0 GHz frequency, the PAM performs well. In HPM, the output power is 28 dBm with at least 39.4% PAE and 240 dBc adjacent channel leakage ratio 1 （ACLR1）. In MPM, the output power is 17 dBm, with at least 21.3% PAE and -43 dBc ACLR1. In LPM, the output power is 8 dBm, with at least 18.2% PAE and -40 dBc ACLR1.展开更多
基金Project supported by the National Natural Science Foundation of China(No.61201244)
文摘Increasingly, mobile communications standards require high power efficiency and low currents in the low power mode. This paper proposes a fully-integrated multi-mode and multi-band power amplifier module （PAM） to meet these requirements. A dual-path PAM is designed for high-power mode （HPM）, medium-power mode （MPM）, and low-power mode （LPM） operations without any series switches for different mode selection. Good performance and significant current saving can be achieved by using an optimized load impedance design for each power mode. The PAM is tapeout with the InGaP/GaAs heterojunction bipolar transistor （HBT） process and the 0.18-μm complementary metal-oxide semiconductor （CMOS） process. The test results show that the PAM achieves a very low quiescent current of 3 mA in LPM. Meanwhile, across the 1.7-2.0 GHz frequency, the PAM performs well. In HPM, the output power is 28 dBm with at least 39.4% PAE and 240 dBc adjacent channel leakage ratio 1 （ACLR1）. In MPM, the output power is 17 dBm, with at least 21.3% PAE and -43 dBc ACLR1. In LPM, the output power is 8 dBm, with at least 18.2% PAE and -40 dBc ACLR1.
