Activitibs of Si in binary Cu-Si and ternary Cu-Ti-Si melts were measured at 1 550℃ by using a method of chemical equilIbrium between gas and liquid. The activity interaction coefficients of Si in the melts have been...Activitibs of Si in binary Cu-Si and ternary Cu-Ti-Si melts were measured at 1 550℃ by using a method of chemical equilIbrium between gas and liquid. The activity interaction coefficients of Si in the melts have been determined from the experimental data (lny = -5.69. s = 6.69. P2: = -26.22. E; =-43.96) and activity interaction coefficients of Ti in binary Cu-Ti melt at 1550℃ has been estimated from Sommer's data based on the regular solution model (lny =-1 .10. : = 2.95.p:=-2.10).展开更多
文摘Activitibs of Si in binary Cu-Si and ternary Cu-Ti-Si melts were measured at 1 550℃ by using a method of chemical equilIbrium between gas and liquid. The activity interaction coefficients of Si in the melts have been determined from the experimental data (lny = -5.69. s = 6.69. P2: = -26.22. E; =-43.96) and activity interaction coefficients of Ti in binary Cu-Ti melt at 1550℃ has been estimated from Sommer's data based on the regular solution model (lny =-1 .10. : = 2.95.p:=-2.10).
