Scaling dependence of memory windows and different carrier charging behaviors in Si nanocrystal nonvolatile memory devices

Based on the charge storage mode,it is important to investigate the scaling dependence of memory performance in silicon nanocrystal（Si-NC） nonvolatile memory（NVM） devices for its scaling down limit.In this work,we made eight kinds of test key cells with different gate widths and lengths by 0.13-μm node complementary metal oxide semiconductor（CMOS） technology.It is found that the memory windows of eight kinds of test key cells are almost the same of about1.64 V @ ±7 V/1 ms,which are independent of the gate area,but mainly determined by the average size（12 nm） and areal density（1.8×10^（11）/cm^2） of Si-NCs.The program/erase（P/E） speed characteristics are almost independent of gate widths and lengths.However,the erase speed is faster than the program speed of test key cells,which is due to the different charging behaviors between electrons and holes during the operation processes.Furthermore,the data retention characteristic is also independent of the gate area.Our findings are useful for further scaling down of Si-NC NVM devices to improve the performance and on-chip integration.

A Novel BEM for Modeling and Simulation of 3T Nonlinear Generalized Anisotropic Micropolar-Thermoelasticity Theory with Memory Dependent Derivative

The main aim of this paper is to propose a new memory dependent derivative(MDD)theory which called threetemperature nonlinear generalized anisotropic micropolar-thermoelasticity.The system of governing equations of the problems associated with the proposed theory is extremely difficult or impossible to solve analytically due to nonlinearity,MDD diffusion,multi-variable nature,multi-stage processing and anisotropic properties of the considered material.Therefore,we propose a novel boundary element method(BEM)formulation for modeling and simulation of such system.The computational performance of the proposed technique has been investigated.The numerical results illustrate the effects of time delays and kernel functions on the nonlinear three-temperature and nonlinear displacement components.The numerical results also demonstrate the validity,efficiency and accuracy of the proposed methodology.The findings and solutions of this study contribute to the further development of industrial applications and devices typically include micropolar-thermoelastic materials.

Temperature Dependent Work-hardening Behaviour in an Fe-Mn-Si-Cr-Ni Shape Memory Alloy

The work-hardening behaviour in an Fe-Mn-Si-Cr-Ni alloy has been investigated using tensile test at different temperatures and TEM observation. It was found that besides the intersection of εmartensite, the intersections of ε martensite with stacking fault and the cross-slip of dislocation which is difficult to occur in the alloy with low stacking fault energy are also important factors to the temperature dependent work-hardening behaviour.

DYNAMEM-A Microarchitecture for Improving Memory Disambiguation at Run-Time

This paper presents a new microarchitecture technique named DYNAMEM,in which memory reference instructions are dynamically scheduled and can be executed out-of-order. Load instructions can bypass store instructions specula-tively, even if the store instructions'addresses are unknown. DYNAMEM can greatly alleviate the restraints of ambiguous memory dependencies. Simulation results show that the frequency of false load is low. Mechanism has been pro-vided to repair false loads with low penalty, and to achieve precise interrupts.Discussions and experimental results show that DYNAMEM could dramatically raise instruction-level parallelism in programs without recompilation.