In0.3Ga0.7N metal-insulator-semiconductor （MIS） and metal-semiconductor （MS） surface barrier photodetectors have been fabricated. The In0.3Ga0.7N epilayers were grown on sapphire by metalorganic chemical vapour de...In0.3Ga0.7N metal-insulator-semiconductor （MIS） and metal-semiconductor （MS） surface barrier photodetectors have been fabricated. The In0.3Ga0.7N epilayers were grown on sapphire by metalorganic chemical vapour deposition （MOCVD）. The photoresponse and reverse current-voltage characteristics of the In0.3Ga0.7N MIS and MS photodetectors were measured. A best zero bias responsivity of 0.18 A/W at 450 nm is obtained for the In0.3Ga0.7N MIS photodetector with 10 nm Si3N4 insulator layer, which is more than ten times higher than the In0.3Ga0.7N MS photodetector. The reason is attributed to the decrease of the interface states and increase of surface barrier height by the inserted insulator. The influence of the thickness of the Si3N4 insulator layer on the photoresponsivity of the MIS photodetector is also discussed.展开更多
A complete model of Metal-Semiconductor-Metal Photodetector(MSM-PD) is presented. It can be used in any circuit simulators. Simulated DC characteristics for a GaAs MSM-PD are in good agreement with reported results.
In this paper,an InGaN metal-insulator-semiconductor(MIS) photodetector with an ultra-thin Al2O3 insulation layer deposited by atomic layer deposition(ALD) was studied.A high photoelectric responsivity of 0.25 A/W and...In this paper,an InGaN metal-insulator-semiconductor(MIS) photodetector with an ultra-thin Al2O3 insulation layer deposited by atomic layer deposition(ALD) was studied.A high photoelectric responsivity of 0.25 A/W and a spectral responsivity rejection ratio of about three orders of magnitude at 1 V reverse bias were achieved for this MIS photodetector.The dominant carrier transport mechanism in the InGaN MIS photodetectors is submitted to the space charge limited current(SCLC) mechanism at high field and exhibits an Ohmic-like conduction at low electric field.The results indicate that the ultra-thin Al2O3 film deposited by the ALD technique can act as an excellent insulation dielectric for the InGaN photodetectors.展开更多
The current-voltage （I-V） characteristics of 4H-SiC metal-semiconductor-metal （MSM） ultraviolet photodetector with different finger widths and spacings, different carrier concentrations and thicknesses of n-type e...The current-voltage （I-V） characteristics of 4H-SiC metal-semiconductor-metal （MSM） ultraviolet photodetector with different finger widths and spacings, different carrier concentrations and thicknesses of n-type epitaxial layer are simulated. The simulation results indicate that the dark current and the photocurrent both increase when the finger width increases. But the effect of finger width on the dark current is more significant. On the other hand, the effect of finger spacing on the photocurrent is more significant. When the finger spacing increases, the photocurrent decreases and the dark current is almost changeless. In addition, it is found that the smaller the carrier concentration of n-type epitaxial layer is, the smaller the dark current and the larger the photocurrent will be. It is also found that I-V characteristics of MSM detector also depend on the epitaxial layer thickness. The dark current of detector is smaller and the photocurrent is larger when the epitaxial layer thickness is about 3μm.展开更多
Fabrication and characterization of metal-semiconductor-metal ultraviolet （MSM UV） photodetector based on ZnO ultra thin （nano scale） films with Pd Schottky contact are reported. The ZnO thin film was grown on gla...Fabrication and characterization of metal-semiconductor-metal ultraviolet （MSM UV） photodetector based on ZnO ultra thin （nano scale） films with Pd Schottky contact are reported. The ZnO thin film was grown on glass substrate by thermal oxidation of preeposited zinc films using vacuum deposition technique. With applied voltage in the range from -3V to 3V, the contrast ratio, responsivity, and detectivity for an incident radiation of 0.1 mW at 365 nm wavelength were estimated. The proposed device exhibited a high gain which was attributed to the hole trapping at semiconductor-metal interface. I-V characteristics were studied and the parameters, such as ideality factor, leakage current, resistance-areaproduct, and barrier height, were extracted from the measured data.展开更多
基金Project supported by the State Key Development Program for Basic Research of China （Grant No 2006CB6049）, the National Natural Science Foundation of China （Grant No 60476030）, and the Natural Science Foundation of Jiangsu Province of China （Grant No BK2006126）.Acknowledgment The authors gratefully acknowledge Nanjing Institute of Electronic Devices for fabricating the insulator layers of the photodetectors.
文摘In0.3Ga0.7N metal-insulator-semiconductor （MIS） and metal-semiconductor （MS） surface barrier photodetectors have been fabricated. The In0.3Ga0.7N epilayers were grown on sapphire by metalorganic chemical vapour deposition （MOCVD）. The photoresponse and reverse current-voltage characteristics of the In0.3Ga0.7N MIS and MS photodetectors were measured. A best zero bias responsivity of 0.18 A/W at 450 nm is obtained for the In0.3Ga0.7N MIS photodetector with 10 nm Si3N4 insulator layer, which is more than ten times higher than the In0.3Ga0.7N MS photodetector. The reason is attributed to the decrease of the interface states and increase of surface barrier height by the inserted insulator. The influence of the thickness of the Si3N4 insulator layer on the photoresponsivity of the MIS photodetector is also discussed.
文摘A complete model of Metal-Semiconductor-Metal Photodetector(MSM-PD) is presented. It can be used in any circuit simulators. Simulated DC characteristics for a GaAs MSM-PD are in good agreement with reported results.
文摘在稳态条件下金属 -半导体 -金属 (MSM)光探测器的光电流一维模型可以通过求解电流连续方程和传输方程来建立并求解 .在这种条件下 ,器件内部的载流子分布情况和总体光电流可以得到解析解而不用数值方法求解 .本文从电流连续方程和传输方程出发详细推导了这一过程 ,并将这一结果应用于具体的 In Ga As MSM光探测器的直流等效电路模型上 。
基金supported by the National Natural Science Foundation of China (Grant No. 51141002)the Fundamental Research Funds for the Central Universities (B1020270)Natural Science Foundation of Jiangsu Province of China (Grant No. BK2010521)
文摘In this paper,an InGaN metal-insulator-semiconductor(MIS) photodetector with an ultra-thin Al2O3 insulation layer deposited by atomic layer deposition(ALD) was studied.A high photoelectric responsivity of 0.25 A/W and a spectral responsivity rejection ratio of about three orders of magnitude at 1 V reverse bias were achieved for this MIS photodetector.The dominant carrier transport mechanism in the InGaN MIS photodetectors is submitted to the space charge limited current(SCLC) mechanism at high field and exhibits an Ohmic-like conduction at low electric field.The results indicate that the ultra-thin Al2O3 film deposited by the ALD technique can act as an excellent insulation dielectric for the InGaN photodetectors.
基金the National Defense Pre-Research Foundation of China.
文摘The current-voltage （I-V） characteristics of 4H-SiC metal-semiconductor-metal （MSM） ultraviolet photodetector with different finger widths and spacings, different carrier concentrations and thicknesses of n-type epitaxial layer are simulated. The simulation results indicate that the dark current and the photocurrent both increase when the finger width increases. But the effect of finger width on the dark current is more significant. On the other hand, the effect of finger spacing on the photocurrent is more significant. When the finger spacing increases, the photocurrent decreases and the dark current is almost changeless. In addition, it is found that the smaller the carrier concentration of n-type epitaxial layer is, the smaller the dark current and the larger the photocurrent will be. It is also found that I-V characteristics of MSM detector also depend on the epitaxial layer thickness. The dark current of detector is smaller and the photocurrent is larger when the epitaxial layer thickness is about 3μm.
基金support by Indo-Iraq Cultural Exchange Program of ICCR (Indian Council for Cultural Relations)
文摘Fabrication and characterization of metal-semiconductor-metal ultraviolet （MSM UV） photodetector based on ZnO ultra thin （nano scale） films with Pd Schottky contact are reported. The ZnO thin film was grown on glass substrate by thermal oxidation of preeposited zinc films using vacuum deposition technique. With applied voltage in the range from -3V to 3V, the contrast ratio, responsivity, and detectivity for an incident radiation of 0.1 mW at 365 nm wavelength were estimated. The proposed device exhibited a high gain which was attributed to the hole trapping at semiconductor-metal interface. I-V characteristics were studied and the parameters, such as ideality factor, leakage current, resistance-areaproduct, and barrier height, were extracted from the measured data.
